I 2 C 256 256 LFCSP-13mm 3mm.8mm MSOP-13mm 4.9mm 1.1mm I 2 C V LOGIC 5kΩ 1kΩ 5kΩ 1kΩ.1EEPROM EEPROM1ms 4 D D1 1 55 typ 4 85 3 5V V DD V LOGIC GND SCL SD D D1 I 2 C SERIL INTERFCE POER- ON RESET V LOGIC 8 8 RDC EEPROM DT CONTROL 1. COMMND DECODE LOGIC DDRESS DECODE LOGIC CONTROL LOGIC RDC REGISTER V DD RDC 526-1 LCDV COM LCD RF FTTH SCL SD D D1 GND I 2 C SERIL INTERFCE 2. EEPROM COMMND DECODE LOGIC DDRESS DECODE LOGIC CONTROL LOGIC RDC REGISTER ND LEVEL SHIFTER 526-3 256 LFCSP-13mm 3mm MSOP-13mm 4.9mm 1 I 2 C EEPROM EEPROM.1 1 D 2 D1 3 SD 4 SCL 5 3. TOP VIE (Not to Scale) 1 9 8 V DD 7 GND 6 V LOGIC 526-2 V LOGIC D D1 4 1 VR RDC REV. REVISION 25 nalog Devices, Inc. ll rights reserved. 15-6891 1-16-1 3 542 82 532-3 3-5-36 MT 2 6 635 6868
7/5 Rev. to Rev. 2/5 Revision : Initial Version
V DD V LOGIC 5V 1 3V 1 V V DD V V 4 T 85 1 Parameter Symbol Conditions Min Typ 1 Max Unit DC CHRCTERISTICS: RHEOSTT MODE Resistor Differential Nonlinearity R-DNL R, V = no connect LS 5 kω 1 ±.2 +1 1 kω 1 ±.1 +1 5 kω/1 kω.5 ±.1 +.5 Resistor Integral Nonlinearity R-INL R, V = no connect LS 5 kω 4 ±.3 +4 1 kω 2 ±.2 +2 5 kω/1 kω 1 ±.4 +1 Nominal Resistor Tolerance R T = 25 C, V DD = 5.5 V 3 +3 % Resistance Temperature Coefficient ( R x 1 6 )/ Code = x/x8 5/15 ppm/ C (R x T) Total iper Resistance R Code = x 75 35 Ω DC CHRCTERISTICS: POTENTIOMETER DIVIDER MODE Differential Nonlinearity DNL LS 5 kω 1 ±.2 +1 1 kω.5 ±.1 +.5 5 kω/1 kω.5 ±.2 +.5 Integral Nonlinearity INL LS 5 kω 1 ±.2 +1 1 kω.5 ±.1 +.5 5 kω/1 kω.5 ±.1 +.5 Full-Scale Error V FSE Code = xff LS 5 kω 7 3 1 kω 4 1.5 5 kω/1 kω 1.4 Zero-Scale Error V ZSE Code = x LS 5 kω 2.5 4 1 kω 1 3 5 kω/1 kω.2.5 Voltage Divider Temperature ( V x 1 6 )/ Code = x/x8 6/5 ppm/ C Coefficient (V x T) RESISTOR TERMINLS Voltage Range V,, GND V DD V Capacitance, C, f = 1 MHz, measured to GND, 45 pf code = x8 Capacitance C f = 1 MHz, measured to GND, 6 pf code = x8 Common-Mode Leakage I CM V = V = V DD /2 1 n
Parameter Symbol Conditions Min Typ 1 Max Unit DIGITL INPUTS ND OUTPUTS Input Logic High V IH.7 x V L V L +.5 V Input Logic Low V IL.5.3 x V L V Leakage Current I IL µ SD, D, D1 V IN = V or 5 V.1 ±1 SCL Logic High V IN = V 2.5 1.3 +1 SCL Logic Low V IN = 5 V.1 ±1 Input Capacitance C IL 5 pf POER SUPPLIES Power Supply Range V DD 2.7 5.5 V Positive Supply Current I DD.1 2 µ Logic Supply V LOGIC 2.7 5.5 V Logic Supply Current I LOGIC V IH = 5 V or V IL = V 3 6 µ Programming Mode Current (EEPROM) I LOGIC(PROG) V IH = 5 V or V IL = V 35 m Power Dissipation P DISS V IH = 5 V or V IL = V, V DD = 5 V 15 4 µ Power Supply Rejection Ratio PSRR V DD = +5 V ± 1%, code = x8 ±.5 ±.6 %/% DYNMIC CHRCTERISTICS andwidth 3 d Code = x8 R = 5 kω 2 khz R = 1 kω 8 khz R = 5 kω 16 khz R = 1 kω 8 khz Total Harmonic Distortion THD R = 1 kω, V = 1 V rms,.1 % V =, f = 1 khz V Settling Time t S R = 1 kω, V = 5 V, 5 ns ±1 LS error band Resistor Noise Voltage Density e N_ R = 5 kω, f = 1 khz 9 nv/ Hz 1 typ 25V DD 5V
V DD V LOGIC 5V 1 3V 1 V V DD V V 4 T 85 2 Parameter Symbol Conditions Min Typ Max Unit I 2 C INTERFCE TIMING CHRCTERISTICS 1 SCL Clock Frequency f SCL 4 khz t UF us Free Time etween Stop t 1 1.3 µs and Start t HD;ST Hold Time (Repeated Start) t 2 fter this period, the first clock pulse is.6 µs generated. t LO Low Period of SCL Clock t 3 1.3 µs t HIGH High Period of SCL Clock t 4.6 µs t SU;ST Setup Time for Repeated t 5.6 µs Start Condition t HD;DT Data Hold Time t 6.9 µs t SU;DT Data Setup Time t 7 1 ns t F Fall Time of oth SD and t 8 3 ns SCL Signals t R Rise Time of oth SD and t 9 3 ns SCL Signals t SU;STO Setup Time for Stop Condition t 1.6 µs EEPROM Data Storing Time t EEMEM_STORE 26 ms EEPROM Data Restoring Time at t EEMEM_RESTORE1 V DD rise time dependent. Measure without 3 µs Power On 2 decoupling capacitors at V DD and G ND. EEPROM Data Restoring Time upon t EEMEM_RESTORE2 V DD = 5 V. 3 µs Restore Command 2 EEPROM Data Rewritable Time 3 t EEMEM_RERITE 54 µs FLSH/EE MEMORY RELIILITY Endurance 4 1 7 kcycles Data Retention 5 1 Years 1 I 2 C 2 EEPROM 3 EEPROM 4 JEDEC 22, Method 117 1, 4 25 8525 7, typ 5 JEDEC 22, Method 117 T J 55.6eV t 8 t 6 t 9 t 2 SCL t 2 t 3 t 4 t 7 t 5 t 1 t 8 t 9 SD t 1 P S S 4. I 2 C P 526-4
T 25 3 Parameter V DD, V LOGIC to GND V, V, V to GND Rating.3 V to +7 V GND.3 V, V DD +.3 V 1 I MX Pulsed 1 ±2 m Continuous ±5 m Digital Inputs and Output Voltage V to 7 V to GND Operating Temperature Range 4 C to +85 C Maximum Junction Temperature 15 C (T JMX ) Storage Temperature 65 C to +15 C Lead Temperature 3 C (Soldering, 1 sec) Thermal Resistance 2 2 C/ θ J : MSOP 1 1 2 2 T JMX T / θ J ESD 4V ESD ESD
1 D 2 D1 3 SD 4 SCL 5 TOP VIE (Not to Scale) 1 9 8 V DD 7 GND 6 V LOGIC 526-8 5. 4. 1 GND V V DD 2 DO 3 D1 1 4 SD 5 SCL 6 V LOGIC 7 GND 8 V DD 9 GND V V DD 1 GND V V DD
V DD V LOGIC 5.5V R 1kΩ T 25 RHEOSTT MODE INL (LS) 1.5 1.3 2.7V 1.1.9.7.5.3.1.1.3 5.5V.5 32 64 96 128 16 192 224 256 CODE (Decimal) 526-15 (LS) DNL POTENTIOMETER MODE.25.2.15.1.5.5.1.15.2 4 C +25 C +85 C.25 32 64 96 128 16 192 224 256 CODE (Decimal) 526-12 6. R-INL 9. DNL RHEOSTT MODE DNL (LS).5.4 2.7V.3.2.1.1.2 5.5V.3.4.5 32 64 96 128 16 192 224 256 CODE (Decimal) 526-17 POTENTIOMETER MODE INL (LS).25.2.15.1 2.7V 5.5V.5.5.1.15.2.25 32 64 96 128 16 192 224 256 CODE (Decimal) 526-11 7. R-DNL 1. INL.25.25.2.2 (LS) INL POTENTIOMETER MODE.15.1 T = +85 C.5.5.1.15 T = +25 C T = 4 C.2.25 32 64 32 128 16 192 224 256 CODE (Decimal) 526-1 (LS) DNL POTENTIOMETER MODE.15 2.7V 5.5V.1.5.5.1.15.2.25 32 64 96 128 16 192 224 256 CODE (Decimal) 526-13 8. INL 11. DNL
.5 2..4 1.8 (LS).3.2 1.6 1.4 ZSE @ V DD = 2.7V INL MODE RHEOSTT.1.1.2.3 4 C +25 C (LS) ZSE 1.2 1..8.6.4 ZSE @ V DD = 5.5V.4 +85 C.5 32 64 96 128 16 192 224 256 CODE (Decimal) 526-14.2 4 2 2 4 6 8 TEMPERTURE ( C) 526-23 12. R-INL 15..5 1.4 RHEOSTT MODE DNL (LS).3.2.1.1.2.3 T = 4 C T = +25 C T = +85 C I D D, SUPPLY CURRENT ( µ ) V DD = 5.5V.4.5 32 64 96 128 16 192 224 256 CODE (Decimal) 526-16.1 4 2 2 4 6 8 TEMPERTURE ( C) 526-2 13. R-DNL 16. 6 (LS) FSE.5 1. FSE @ V DD = 5.5V 1.5 2. FSE @ V DD = 2.7V 2.5 3. 4 2 2 4 6 8 TEMPERTURE ( C) 526-24 I L OGI C, LOGIC SUPPLY CURRENT ( µ ) 5 4 V DD = 5.5V 3 2 1 V DD = 2.7V 1 4 2 2 4 6 8 TEMPERTURE ( C) 526-21 14. 17.
R HEOSTT MODE TEMPCO (ppm/ C ) 4 3 2 1 1 2 3 4 5 5kΩ 1kΩ 12 5kΩ 1kΩ 6 96 64 32 128 16 192 224 256 CODE (Decimal) 526-19 T OTL RESISTNCE (k Ω) 1 8 6 4 2 1kΩ Rt @ V DD = 5.5V 5kΩ Rt @ V DD = 5.5V 1kΩ Rt @ V DD = 5.5V 5kΩ Rt @ V DD = 5.5V 4 2 2 4 6 8 TEMPERTURE ( C) 526-25 18. R 1 6 / R T 21. 7 P OTENTIOMETER MODE T EMPCO (ppm / C ) 6 5 4 3 1kΩ 2 1kΩ 1 1 2 5kΩ 5kΩ 3 4 32 64 96 128 16 192 224 256 CODE (Decimal) 526-18 GIN (d) 6 12 18 24 3 36 42 48 54 6 1k 8 H 4 H 2 H 1 H 8 H 4 H 2 H 1 H 1k 1k FREQUENCY (Hz) 1M 526-26 1M 19. V 1 6 / V T 22. R 5kΩ 35 3 6 12 8 H 4 H R @ x 25 2 15 R @ V DD = 2.7V GIN (d) 18 24 3 36 2 H 1 H 8 H 4 H 2 H 1 R @ V DD = 5.5V 5 4 2 2 4 6 8 TEMPERTURE ( C) 526-22 42 48 54 6 1k 1k 1 H 1k FREQUENCY (Hz) 1M 526-27 1M 2. R 23. R 1kΩ
1k 6 8 H 12 4 H GIN (d) 18 24 3 36 42 48 2 H 1 H 8 H 4 H 2 H 1 H I L OGI C (µ ) 1k 1 V DD = V LOGIC = 3V V DD = V LOGIC = 5V 54 6 1k 1k 1k FREQUENCY (Hz) 1M 526-28 1 1 2 3 4 5 V IH (V) 526-55 24. R 5kΩ 27. 6 8 H 8 CODE = MIDSCLE, V = V LOGIC, V = V 12 18 4 H 2 H 6 PSRR @ V LOGIC = 5V DC ± 1% p-p C GIN (d) 24 3 36 1 H 8 H 4 H PSRR (d) 4 PSRR @ V LOGIC = 3V DC ± 1% p-p C 42 48 2 H 1 H 2 54 6 1k 1k 1k FREQUENCY (Hz) 1M 526-29 1 1k 1k 1k 1M FREQUENCY (Hz) 526-54 25. R 1kΩ 28. PSRR 6 GIN (d) 12 18 24 3 36 1kΩ 8kHz 5kΩ 16kHz 1kΩ 8kHz 5kΩ 2MHz 2mV/DIV 1 V 42 48 5V/DIV 2 SCL 54 6 1k 1k 1k FREQUENCY (Hz) 1M 526-5 1M 4ns/DIV 526-51 26. 3d @ x8 29.
5mV/DIV 1 2V/DIV V 1 V 1µs/DIV 526-52 5V/DIV 2 SCL 2ns/DIV 526-53 3. x7f x8 31.
32 37 32. V+ DUT V+ = V DD 1LS = V+/2 N V MS INL DNL 526-3 35. V V DD V+ V+ = V DD 1% V DUT ( MS ) PSRR (d) = 2 LOG V V MS % DD PSS (%/%) = V DD % V MS PSS PSSR 526-33 33. NO CONNECT DUT V MS R-INL R-DNL I 526-31 OFFSET GND 36. V IN +2.5V DUT +5V D861 5V V OUT 526-34 V MS2 DUT V I = V DD /R NOMINL R = [V MS1 V MS2 ]/I R S =.1V DUT I S CODE = x I S.1V V MS1 526-32 GND TO V DD 526-35 34. 37.
256 VR EEPROM RDC R 5kΩ 1kΩ 5kΩ 1kΩVR 256 RDC8 256 1 38. D R D R 2 R 256 1 D 8 RDC 1 R R D7 D6 D5 D4 D3 D2 D1 D R S R S R S 526-36 RDC R R 256 D R DR 2 R 256 2 3 EEPROM R.1 V DD GND 4. V I 5V 1LS V 5V V D 256 D V DV V 3 256 256 V V O 526-38 R V DV D R V D R R 4 RDC LTCH ND DECODER 39. R S RDC 526-37 R R 2m
I 2 C SCL SD 4 7 R/ 6 R/ R/ 2 D D1 2 I 2 C 7 5 9 SD R/ 2 3 6 RDC EEPROM 7 1 5 13 14 9 SD MS LS LS 9 SD R/ 3 6RDC EEPROM EEPROM RDC 5 13 14 RDC EEPROM 11 16 R/ 1 15 16 SCL SD 1 SD 46 9 SD 1 SD SD 47 RDC RDC RDC RDC
I 2 C 5 S P S M N R X S P S M D1 D 2 5. D1 ddress Pin D ddress Pin I 2 C Device ddress 11 1 111 1 111 1 1 1111 N R X 6. S 7-it Device ddress (See Table 5) R/ S C2 C1 C 4 3 2 1 S D7 D6 D5 D4 D3 D2 D1 D S P Slave ddress yte Instruction yte Data yte 7. RDC EEPROM C2 C1 C Command Description Operation etween Interface and RDC. 1 Operation etween Interface and EEPROM. 1 Operation etween Interface and rite Protection Register. See Table 1. 1 NOP. 1 1 Restore EEPROM to RDC. 1 1 Store RDC to EEPROM. 8. RDC S 7-it Device ddress (See Table 5) S S D7 D6 D5 D4 D3 D2 D1 D S P Slave ddress yte Instruction yte Data yte 9. EEPROM S 7-it Device ddress (See Table 5) S 1 S D7 D6 D5 D4 D3 D2 D1 D S P Slave ddress yte Instruction yte Data yte 1. S 7-it Device ddress (See Table 5) S 1 S P S P Slave ddress yte Instruction yte Data yte
1 P P P 3 2 EEPROM 2 EEPROM 11. RDC S 7-it Device ddress 7-it Device ddress (See Table 5) S S S (See Table 5) 1 S D7 D6 D5 D4 D3 D2 D1 D N P Slave ddress yte Instruction yte Slave ddress yte Read ack Data Repeat Start 12. EEPROM S 7-it Device ddress (See Table 5) S 1 S S Repeat Start 7-it Device ddress (See Table 5) 1 S D7 D6 D5 D4 D3 D2 D1 D N P Slave ddress yte Instruction yte Slave ddress yte Read ack Data 13. EEPROM RDC S 7-it Device ddress (See Table 5) S 1 1 S P Slave ddress yte Instruction yte 14. EEPROMRDC S 7-it Device ddress (See Table 5) S 1 1 S P Slave ddress yte Instruction yte
15. 7-it Device ddress S (See Table 5) S 7-it Device ddress (See Table 5) S 1 1 1 1 1 S S Repeat Start S 1 1 1 1 1 1 S S Repeat Start 7-it Device ddress (See Table 5) Slave ddress yte Instruction yte Slave ddress yte Decimal yte 7-it Device ddress (See Table 5) 1 S D7 D6 D5 D4 D3 D2 D1 D N P Slave ddress yte Instruction yte Slave ddress yte Sign + Integer yte 1 S D7 D6 D5 D4 D3 D2 D1 D N P 16. 7-it Device ddress S (See Table 5) Slave ddress yte S 1 1 1 1 1 S S Instruction yte Repeat Start 7-it Device ddress (See Table 5) Slave ddress yte 1 S D7 D6 D5 D4 D3D2D1DMD7 D6 D5 D4 D3 D2 D1 D N P Sign + Integer yte Decimal yte R D7 D6 D5 D4 D3 D2 D1 D D7 D6 D5 D4 D3 D2 D1 D SIGN 2 6 2 5 2 4 2 3 2 2 2 1 2 2 1 2 2 2 3 2 4 2 5 2 6 2 7 2 8 SIGN 41. 7 ITS FOR INTEGER NUMER 8 ITS FOR DECIML NUMER 526-5 R R 2 41 2 EEPROM1111 11111 2 2 15 1 2 16 EEPROM 2 1111 11111 MS 1 7 28.1 R 1kΩ 1111 1 1111111 1111 MS 71 11 28 8 1111 15 2 8.6 28.6 28.1 R _CTUL 12.81kΩ
ESD V DD V LOGIC GND3 V DD GND ESD 42 SCL SD V LOGIC GND ESD 43 42. V DD V DD GND GND V LOGIC 526-39.1.1µF ESR 1 1µF 44 1 V DD C2 1µF + C1.1µF V DD SCL 43. SD GND V LOGIC GND ESD 41 GND/V DD /V LOGIC V DD V LOGIC GND V DD V LOGIC V V V GND/V DD /V LOGIC V V V 526-4 44. GND 2 D D1 2 I 2 C 7 5 4 indows 98/indows 2/indows XP PC D5258 45 GUI 526-42 526-41 45.
V LOGIC V DD LCD 3 5VV COM 46 5V C1 1µF VCC (~3.3V) MCU R6 1kΩ R5 1kΩ 46. 5V V DD V LOGIC SCL SD GND 14.4V R1 7kΩ R2 1kΩ V COM 4714.4V 3.3V V DD V DD 4.8V 4.8V V DD µ V LOGIC MCU 3.3V EEPROM 35m V LOGIC 7kΩ 35m V LOGIC V DD R3 25kΩ U1 D8565 + 3.5V < V COM < 4.5V 526-6 V LOGIC V DD 2 V LOGIC EEPROM V DD C1 1µF VCC (~3.3V) MCU R6 1kΩ SUPPLIES POER TO OTH THE MICRO ND THE LOGIC SUPPLY OF THE DIGITL POT 47. R5 1kΩ V DD V LOGIC SCL SD GND 14.4V R1 7kΩ R2 1kΩ V DD EDN 24 9 3 Simple VCOM djustment uses any Logic Supply Voltage VCOM R3 25kΩ U1 D8565 + 3.5V < V COM < 4.5V 526-7
3. SC INDEX RE 3. SC SQ PIN 1 INDICTOR 3. SC.95.85.75 PIN 1.15. 48. 1 6 1.27.17 5.5 SC COPLNRITY.1 4.9 SC 1.1 MX SETING PLNE.23.8 8 COMPLINT TO JEDEC STNDRDS MO-187-1 MSOP RM-1 mm.8.6.4 1.5 CS SQ.8.75.7 SETING PLNE TOP VIE SIDE VIE.3.23.18.8 MX.55 TYP.5 SC.5.4.3 EXPOSED PD (OTTOM VIE) 1.74 1.64 1.49 49. 1 LFCSP-D 3mm 3mm CP-1-9 mm 1 6.5 MX.2 NOM.2 REF 1 5 2.48 2.38 2.23 D526--7/5()-J Model R (kω) Temperature Range Package Description Package Option randing RMZ5 1 5 k 4 C to +85 C 1-Lead MSOP RM-1 D4P RMZ5-R7 1 5 k 4 C to +85 C 1-Lead MSOP RM-1 D4P CPZ5-R7 1 5 k 4 C to +85 C 1-Lead LFCSP_D CP-1-9 D4P RMZ1 1 1 k 4 C to +85 C 1-Lead MSOP RM-1 D4Q RMZ1-R7 1 1 k 4 C to +85 C 1-Lead MSOP RM-1 D4Q CPZ1-R7 1 1 k 4 C to +85 C 1-Lead LFCSP_D CP-1-9 D4Q RMZ5 1 5 k 4 C to +85 C 1-Lead MSOP RM-1 D4R RMZ5-R7 1 5 k 4 C to +85 C 1-Lead MSOP RM-1 D4R CPZ5-R7 1 5 k 4 C to +85 C 1-Lead LFCSP_D CP-1-9 D4R RMZ1 1 1 k 4 C to +85 C 1-Lead MSOP RM-1 D4S RMZ1-R7 1 1 k 4 C to +85 C 1-Lead MSOP RM-1 D4S CPZ1-R7 1 1 k 4 C to +85 C 1-Lead LFCSP_D CP-1-9 D4S EVL 2 Evaluation oard 1 Z RoHS 2 1kΩ I 2 CI 2 C I 2 C I 2 C