4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( )
) ( ) ( 34,3 (1995))
(M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )
DMD (Digital Micromirror Device) DMD (Digital Micromirror Device)
DMD (Digital Micromirror Device) DMD V.Kessel et.al., Proc.IEEE, 86 (1996)
(1975)
GLV (Grating Light Valve) 1920 / sec GLV(Grating Light Valve) 1080 1920 HDTV (MEMS & (CQ )p.189 )
GLV 4000:1 (S.R.Kubota ( ), Optics & Photonics News, Sept.2002, p.50)
GLV CTP (Computer-To- Plate) ( ) (MEMS & (CQ )p.189 ) 10 m
CRT FED (Field Emission Display) Optronics, Vol.10, No.202 (1998) p.145 (Trigger, 1998 10 )
( ( ), 2001 1 ) (N.Asada et.al., IEEE Trans. on Magnetics 30 (1994))
( ) Nomad Expert Technical System (J.R.Lewies : IEEE Specrrum, May 2004 p.16)
( )
(GMR ) ( No.671 (1996) p.85, p.94, No.691 (1997) p.94) 2mm ( (1998))
MO ( 68 1999 pp.1171-1177)
MD ( 68 1999 pp.1171-1177)
(D.W.Lee et.al., MEMS 01)
30 nm Pt/Ti SiO 2 Ni
(GeSbTe) (2µm 2µm)
(D.W.Lee et.al., J. of Microelectromechanical Systems, 11, 3 (2002), 215-219) (J.H.Bae et.al., Applied Physics Letters, 82 (2003), pp.814-816)
(J.H.Bae, Diamond and Relared Materials, 12 (2003), p.2128) Diamond Probe for Ultra-High-Density Data Storage Based on Scanning Nonlinear Dielectric Microscopy H.Takahashi (Pioneer Corp.), T.Ono, Y.Cho and M.Esashi(Tohoku Univ.) (MEMS 04 (2004) p.536)
Domain of ferromagnetics N N S Domain of ferroelectrics + Pr - Pr + N ~50nm Bloch wall Pr Single lattice domain wall Advantageous to record nano-size domain array SNDM (Scanning Nonlinear Dielectric Microscopy) (Y.Cho, Rev. Sci. Instrum. 67, (1996) p.2297) 800nm The end of the diamond probe. Recording medium LiTaO 3 Thickness: 60nm Writing condition DC Pulse: 15 V Width: 1 ms Reading condition AC voltage: 2.5V Frequency: 10kHz FM signal frequency: around 1.3GHz The diamond probe array.
T.Ono et.al., Nanotechnology, 14 (2003) pp.1051-1054) H 2 N H SH 2 N (NH4)2S2O8 NH 2 NH 2 NH 2 N N N S S S Au NH NH NH S S S Au 7nm
5µm 5µm 5µm ( 0.03V) (, (2004)) H H N N N N n N N N N n H + H + + + 2H +2e - 30
4µm 4µm 3V -3V ( 0.03V) 100 150nm
( ) (N.Sato et.al. (NTT), Proc. the 20th Sensor Symposium, (2003) p.323)
MEMS ( ) ( (NHK )
( FHD (Frame Hydrolysis Deposition)) (T.Tajima et.al., Micro and Nanoengineering 2002 Internal. Conf., Lugano Switzerland (2002))
( ) (,, Vol.87 (1999) p.713)
( ISDN (1989) ) (,, Vol.87 (1999) p.713)
+/- 5 motion on each axis. ~ 150V drive voltage. 256 256 2 < 5msec switching time. 2
( )
( FHD (Frame Hydrolysis Deposition))
(M.Hoffmann )
Satellite antenna HDTV Camera Information consent Optical switch Quartz fiber Camera HDTV Information divide transmission POF 5 POF 25 15 SMA SMA SMA POF SI 0.486 0.5mm L W H2 320 0.35 Ni Ni 0.5 SMA Ni Ti 0.2mm 1 8 0 05mm (M.Bhuiyan et.al., 20 th Sensor Symposium, (2003) 47-50)
(L.P.Boivin, Applied Optics, Vol.13 (1973) p.391) λ1 VOA MUX Optical fiber DMUX PD λ2 VOA PD λ3 VOA PD Optical Amp λn VOA PD dβ dβ dβ µm µm µm VOA VOA;Variable Optical Attenuator (DWDM)
500 µm 70 µm 525 µm off on Array-VOA SEM Array-VOA ( )
30 m RF ( ) RF ( ) ( )
RFMEMS
(Y.Liu et.al., MEMS 01)
( ) <160mW (6V ) on <0.3 <3ms 8000 3V-15mA 20GHz 5mm MEMS ( ) ( ) 2003 12 4 SEMICON JAPAN 4mm MEMS
MEMS (J.Chao, Int l Conf. Millimeter Submillimeter Waves and Applications (1994)) RF ( : )
(, 2004,11,22, p.61) ( 2004.7.5)
(Wan-Thai Hsu (Discera). From micromechanical resonators to fully integrated transceivers 8 SEMI MEMS 12 2 )
(J.Wang et.al., Transducers 03 (2003) p.947) 3 20 m (J.Wang et.al., Trans-ducers 03 (2003) p.947)
73MHz (M.A.Abdelmoneum et.al., MEMS 03, Kyoto (2003) p.698) FBAR ( ) ( ) MEMS Motional resistance Motional resistance Q Post CMOS compatible
AlN ( ) (G.Piazza et.al.(u.c.berkeley), MEMS 2005, p.20) ( )
LC [Q ] [ ] [ MEMS GHz ] (SAW : Surface Acoustic Wave) GHz ( ) (FBAR : Bulk Acoustic Wave) GHz An FBAR technology is good for a GHz frequencies. -Low IL (RX:2.2dB TX:1.8dB*) -High Power Handling (30dBm*) -Higher frequency Operation A SAW technology suffers from degradations of electric characteristics in a GHz band. ( ) *http:www.agilent.co.jp
GHz ( ) High Q H 2 O 2 Ge CMOS AlN (300 ) CMOS CMOS AlN (AlN 300 ) AlN (M.Hara, IEEE MTT-S Internl. Microwave Symposium (2003) p.1797)
FBAR FBAR
Agilent FBAR FBAR (L.Elbrecht et.al.(infinion Tech.),2004 IEEE MTT-S,(2004) p.395)
400MHz 1 (H.Satoh (Toshoba), 1987 Ultrasonic Symposium, pp.363-368) (, 7th Symp. on Microjoining and Assembly Technology in Electronics, (2001), 303-306)
( ) (E.-C.Park, J.-B.Yoon et.al.,mems 2003, pp.136-139) RF (R.Dekker et.al., An Ultra Low-Power RF Bipolar Technology on Glass, IEDM 97-921)
TOP Silicon Silicon dioxide Bottom Trench-refilled TEOS oxide Trench-refill
P.W.Barth, Micromachining and Micropackaging of Transducers, (ed. C.D.Fung) Elsevier Sci Pub., (1985) p.189 Micro Zero-Insertion-Force (ZIF) Connector (Y.Zhan ( ), WIMS ERC Annual Report 2002, p.124)
( )
(A.K.Mallik, J.of Microelectromechanical Systems, 4,3 (1995) p.119) Capillary pumped loop (K.Pettigrew et.al., MEMS 2001, p.427)