Keywords: hot carrier, submicron device, MOSFET, reliability, trap, interface states, lucky electron, electron temperature Hot Carrier Effects in MOS
|
|
- はるまさ さどひら
- 5 years ago
- Views:
Transcription
1 Keywords: hot carrier, submicron device, MOSFET, reliability, trap, interface states, lucky electron, electron temperature Hot Carrier Effects in MOS Devices. Mitsu masa KOYANAGI. Research Center for Inte grated Systems, Hiroshima University. Shitami, Saijo-cho, Higashi-Hiroshima 724.
2
3
4
5
6
7
8
9
10
11
12
13
14 2) T. H. Ning, C. M. Osburn and H. N. Yu: J. Appl. Phys. 48 (1977) ) T. H. Ning and H. N. Yu: J. Appl. Phys. 45 (1974) ) C. Hu: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1979 (IEEE Publish ing Services, New York, 1979) p ) S. Tam, P.-K. Ko and C. Hu: IEEE Trans. Electron Devices ED-31 (1984) ) E. Takeda, Y. Nakagome, H. Kume and S. Asai: IEE Proc. 130 (1983) ) K. R. Hofmann, C. Werner, W. Weber and G. Dorda: IEEE Trans. Electron Devices ED-32 (1985) ) R. B. Fair and R. C. Sun: IEEE Trans. Elec tron Devices ED-28 (1981) 83. 9) E. Takeda, A. Simizu and T. Hagiwara: IEEE Electron Device Lett. EDL-4 (1983) ) R. Bellens, P. Heremans, G. Groeseneken and H. E. Maes: IEEE Electron Device Lett. EDL 9 (1988) ) S. K. Lai: Appl. Phys. Lett. 39 (1981) ) A. Schwerin, W. Hansch and W. Weber: IEEE Trans. Electron Devices ED-34 (1987) ) T. Tsuchiya, T. Kobayashi and S. Nakajima: IEEE Trans. Electron Devices ED-34 (1987) ) P. E. Cottrell, R. R. Troutman and T. H. Ning: IEEE Trans. Electron Devices ED-26 (1979) ) Y. Nissan-Cohen, G. A. Franz and R. F. Kwasnick: IEEE Electron Device Lett. EDL -7 (1986) ) E. Takeda, H. Kume, T. Toyabe and S. Asai: IEEE Trans. Electron Devices ED-29 (1982) ) H. Katto, K. Okuyama, S. Meguro and N. Suzuki: Proc Symp. VLSI Technology, (IEEE Publishing Services, New York, 1987) p ) J. Winnerl, A. Lill, D. Schmitt-Landsiedel, M. 18) W. Weber: IEEE Trans. Electron Devices ED - 35 (1988) ) C. Hu, S. Tam, F. -C. Hsu, P. -K. Ko, T. -Y. Orlowski and F. Neppl: Tech. Dig. Int. Elec Chan and K. W. Terill: IEEE Trans. Electron Devices ED-32 (1985) ) T. Y. Chan, C. L. Chiang and H. Gaw: Tech. Dig. Int. Electron Devices Meet., San Fran cisco, 1988 (IEEE Publishing Services, New York, 1988) p ) K. K. Ng and G. W. Taylor: IEEE Trans. Electron Devices ED-30 (1983) ) E. Takeda, Y. Nakagome, H. Kume, N. Suzuki and S. Asai: IEEE Trans. Electron Devices ED-30 (1983) ) M. Koyanagi, T. Y. Huang, A. G. Lewis and J. Y. Chen: Proc Taiwan Symp. VLSI Technology, Taipei, 1989 (IEEE Service Center, New Jersey, 1989) p ) M. Koyanagi, A. G. Lewis, R. A. Martin, T. Y. Huang and J. Y. Chen: Ext. Abstr. 18th (1986 Int.) Conf. Solid State Devices and Materials, 25) M. Koyanagi, A. G. Lewis, R. A. Martin, T. Y. Huang and J. Y. Chen: IEEE Trans. Electron Devices ED-34 (1987) ) M. Kinugawa, K. Yamada, Y. Katoh, E. Ni shimura, M. Kakumu and J. Matsunaga: Proc Symp. VLSI Technology, San Diego, 1988 (IEEE Service Center, New Jersey, 1988) p ) F. Matsuoka, H. Hayashida, K. Hama, Y. To yoshima, H. Iwai and K. Maeguchi: Tech. Dig. Int. Electron Devices Meet., San Fran cisco, 1988 (IEEE Publishing Services, New York, 1988) p ) R. B. Fair and R. C. Sun : IEEE Trans. Elec tron Devices ED-28 (1981) ) W. Weber, C. Werner and G. Dorda: IEEE Electron Device Lett. EDL-5 (1984) ) K. -L. Chen, S. A. Saller, I. A. Groves and D. B. Scott: IEEE Trans. Electron Devices ED -32 (1985) ) T. Horiuchi, H. Mikoshiba, K. Nakamura and K. Hamano: IEEE Electron Device Lett. EDL- 7 (1986) ) B. S. Doyle, M. Bourcerie, J. -C. Marchetaux and A. Boudou: IEEE Electron Device Lett. EDL-8 (1987) ) W. Weber: IEEE Trans. Electron Devices ED- 35 (1988) ) M. Koyanagi, A. G. Lewis, R. A. Martin, T. Y. Huang and J. Y. Chen: Tech. Dig. Int. Elec tron Devices Meet., Washington, D. C., 1987 tron Devices Meet., San Francisco, 1988 (IEEE Publishing Services, New York, 1988) p ) W. Weber, L. Risch, W. Krautschneider and Q. Wang: Tech. Dig. Int. Electron Devices Meet., San Francisco, 1988 (IEEE Publishing Services, New York, 1988) p ) R. Bellens, P. Heremans, G. Groeseneken and H. E. Maes: Tech. Dig. Int. Electron Devices Meet., San Francisco, 1988 (IEEE Publishing Services, New York, 1988) p ) W. Weber, C. Werner and A. V. Schwerin: Tech. Dig. Int. Electron Devices Meet., Los Angeles, 1986 (IEEE Publishing Services, New York, 1986) p ) J. Y. Choi, P. -K. Ko and C. Hu : Proc. 1987
15 Meet., Washington D. C., 1985 (IEEE Publish ing Services, New York, 1985) p,56. 40) K. -L. Chen, S. A. Saller and R. Shah: IEEE 60) N. Khurana and C. L. Chiang ; Proc, Int. Re Trans. Electron Devices ED-33 (1986) 424. liability Phys. Symp., Anaheim, 1986 (IEEE 41) T. -C. Ong, K. Seki, P. -K. Ko and C. Hu: IEEE Publishing Services, New York, 1986) p Electron Device Lett. EDL-9 (1988) ) A. Toriumi, M. Yoshimi, M. Iwase, Y. Aki 42) H. Wang, M. Davis and R. Lahri: Tech. Dig. yama and K. Taniguchi : IEEE Trans. Electron Int. Electron Devices Meet., San Francisco, Devices ED-34 (1987) (IEEE Publishing Services, New York, 62) T. Figielski and A. Torum: Proc. Int. Conf. 1988) p Phys. Semiconductors, Exeter, U. K., 1962, p. 43) Y. Igura and E. Takeda : Proc Symp ) C.Chang and J. Lien: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) T. -Y. Chan, J. Chen, P. -K. Ko and C. Hu: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) H. Sasaki, M. Saitoh and K. Hashimoto: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) C. Chang, S. Haddad, B. Swaminathan and J. Lien: IEEE Electron Device Lett. EDL-9 (1988) ) I. -C. Chen, D. J. Coleman and C. W. Teng: IEEE Electron Device Lett. EDL-10 (1989) ) T. Tsuchiya: Proc Symp. VLSI Tech 50) R. Shirota, T. Endoh, M. Momodomi, R. Nakayama, S. Inoue, R. Kirisawa and F. Masuoka: Tech. Dig. Int. Electron Devices Meet., San Francisco, 1988 (IEEE Publish ing Services, New York, 1988) p ) M. Rodder: IEEE Electron Device Lett. EDL- 9 (1988) ) C. Duvvury, D. J. Redwine and H. J. Stiegler: IEEE Electron Device Lett. EDL-9 (1988) ) J. Chen, T. -Y. Chan, P. -K. Ko and C. Hu: IEEE Electron Device Lett. EDL-10 (1989) ) Y. Igura, H. Matsuoka and E. Takeda: IEEE Electron Device Lett. EDL-10 (1989) ) P. A. Childs, R. A. Stuart and W. Eccleston: Solid-State Electron. 26 (1983) ) S. Tam, F. -C. Hsu, P. -K. Ko and C. Hu: IEEE Electron Device Lett. EDL-4 (1983) ) S. Tam and C. Hu: IEEE Trans. Electron Devices ED-31 (1984) ) T. Tsuchiya and S. Nakajima: IEEE Trans. Electron Devices ED-32 (1985) ) A. Toriumi, M. Yoshimi, M. Iwase and K. Taniguchi: Tech. Dig. Int. Electron Devices 63) J. Shewchun and L. Y. Wei: Solid-State Elec tron. 8 (1964) ) E. Kamieniecki : Phys. Status Solidi 6 (1964) ) E. Takeda, H. Kume, Y. Nakagome, T. Makino, A. Shimizu and S. Asai: IEEE Trans. Electron Devices ED-30 (1983) ) M. Koyanagi, H. Kaneko and S. Shimizu: IEEE Trans. Electron Devices ED-32 (1985) ) S. Ogura, P. J. Tsang, W. W. Walker, D. L. Chritchlon and J. F. Shepard: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1981 (IEEE Publishing Services, New York, 1981) p ) H. Katto, K. Okuyama, S. Meguro, R. Nagai and S. Ikeda: Tech. Dig. Int. Electron De vices Meet., San Francisco, 1984 (IEEE Pub lishing Services, New York, 1984) p ) T. Y. Huang, W. W. Yao, R. A. Martin, A. G. Lewis, M. Koyanagi and 7. Y. Chen: Tech. Dig. Int. Electron Devices Meet., Los Angeles, 1986 (IEEE Publishing Services, New York, 1986) p ) R. Izawa, T. Kure, S. Iijima and E. Takeda: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) T. Eimori, H. Ozaki, H. Oda, S. Ohsaki, J. Mitsuhashi, S. Satoh and T. Matsukawa: Proc. 19th Conf. Solid State Devices and Materials, 73) M. Inuishi, K. Mitsui, S. Komori, M. Shimizu, H. Oda, J. Mitsuhashi and K. Tsukamoto: Proc Symp. VLSI Technology, Kyoto, 74) T. Hori, K. Kunimoto, T. Yabu and G. Fuse: Proc Symp. VLSI Technology, San Diego, 1988 (IEEE Service Center, New Jersey, 1988) p. 15.
1
3 Photonics Technologies 3-1 Optical Modulators for Photonic Sideband Management KAWANISHI Tetsuya and IZUTSU Masayuki In this paper, we presented our recent works on development of optical modulators
More informationスライド 1
LER/LWR WG4 /WG5 /WG6(PIDS)/WG11 65nm WG11 1 LER/LWR 2004 UPDATE LER/LWR 2 1. LER/LWR 2. * * 3. 4. * Lithography/PIDS/Interconnect 5. 3 1. LER/LWR Line-Edge Roughness (LER) L y Line-Width Roughness (LWR)
More information○広島大学職員任免規則\(案\)
1 (14 2 1 (58 2 (9 3 (1012 4 (13 5 (1415 6 (1622 3 1 (23 2 (2425 3 (2627 4 (2829 4 (3033 5 (34 36 6 (37 1641 81 1 ( 1 ( 1641 78 ( 1641 79 ( 1641 80 ( 2 ( 22 49 ( 2 ( 3 101 Hiroshima University (1 ( ( (2
More information○広島大学船員就業規則
1 (14 2 1 (58 2 (9 3 (10 4 (1112 5 (1316 6 (1720 7 (2123 8 (2425 3 (26 4 (27 37 5 (38 6 (3959 7 (60 8 (6166 9 (67 78 10 (79 11 (80 12(81 13 (82 14 (83 15 (84 1641 79 1 ( 1 ( 1641 121 2 ( ( ( 2 ( 22 100
More information1
3-2 Study for Far-infrared and Faint Iight Detection Technology FUJIWARA Mikio, AKIBA Makoto, and SASAKI Masahide To realize a sensitive photodetector, cooling down the device is a effective way because
More information特集_03-07.Q3C
3-7 Error Detection and Authentication in Quantum Key Distribution YAMAMURA Akihiro and ISHIZUKA Hirokazu Detecting errors in a raw key and authenticating a private key are crucial for quantum key distribution
More informationThe Plasma Boundary of Magnetic Fusion Devices
ASAKURA Nobuyuki, Japan Atomic Energy Research Institute, Naka, Ibaraki 311-0193, Japan e-mail: asakuran@fusion.naka.jaeri.go.jp The Plasma Boundary of Magnetic Fusion Devices Naka Fusion Research Establishment,
More information(34) Vardapetyan, R. R., Terzikyan, S. A.: Instrum. Exp. Tech. 25 (1983) 968 (39) Srivastava, S. K.: Appl. Optics (1983) 1551 Lewis, B. R.: App
(34) Vardapetyan, R. R., Terzikyan, S. A.: Instrum. Exp. Tech. 25 (1983) 968 (39) Srivastava, S. K.: Appl. Optics 22-103 (1983) 1551 Lewis, B. R.: Appl. Optics 22-10 (1983) 1546 (39) (40) Laporte, P.,
More information1
4 Nano Device Technologies From New Functions of Extreme Substances to Telecommunication Technologies 4-1 Controlling Intermolecular Interactions using Nano- Structural Molecules OTOMO Akira, YOKOYAMA
More information第1章 溶接法および機器
670 ) ) ) ) 2.1 ) 42 671 Sn T m K. T m. T m. T m 2.2 JIS BAl BPd Al-Si Al-Mn KAlF -K AlF H O Ni 43 672 Sn-In Zn EU RoHS ) Pb Cd Hg JIS Z ( ) ) ) 3.1 44 673. MO HX MX H O M X (d) Young sf lf cos sl sf lf
More informationStress-responsive MAP kinases 15) Lu, H. T., Yang, D. D., Wysk, M., Gatti, E., Mellman, I., Davis, R. J., Flavell, R. A. : EMBO J., 18,1845-1857 (1999) 16) Lu, B., Yu, H., Chow, C., Li, B., Zheng,
More informationMATSUNAGA
MATSUNAGA MATSUNAGA 1 a a a a 2 3 a 4 5 a a a a a 6 a a 7 a a a a 8 9 a a a a a a 10 a a a a 11 a a a 12 a a a a 13 a a a 14 a a a 15 a a a 16 a a a a 17 a a 18 19 a a 20 21 a a 22 a 23 24 25 26 27 28
More informationuntitled
2013 74 Tokyo Institute of Technology AlGaN/GaN C Annealing me Dependent Contact Resistance of C Electrodes on AlGaN/GaN, Tokyo Tech.FRC, Tokyo Tech. IGSSE, Toshiba, Y. Matsukawa, M. Okamoto, K. Kakushima,
More informationA Few Problems in the Development of Shape Memory Alloys ; Shuichi Miyazaki, Kazuhiro Otsuka (Inst.' of Materials Science, Univ. of Tsukuba, Sakura-mu
A Few Problems in the Development of Shape Memory Alloys ; Shuichi Miyazaki, Kazuhiro Otsuka (Inst.' of Materials Science, Univ. of Tsukuba, Sakura-mura, Ibaraki) Keywords : shape memory effect, pseudoelasticity,
More informationI/F Memory Array Control Row/Column Decoder I/F Memory Array DRAM Voltage Generator
- - 18 I/F Memory Array Control Row/Column Decoder I/F Memory Array DRAM Voltage Generator - - 19 - - 20 N P P - - 21 - - 22 DRAM - - 23 a b MC-Tr avcc=2.5vvbb=-1.5vvpp=4.0v bvcc=1.7vvbb=-1.0vvpp=3.0v
More information1 2 LDA Local Density Approximation 2 LDA 1 LDA LDA N N N H = N [ 2 j + V ion (r j ) ] + 1 e 2 2 r j r k j j k (3) V ion V ion (r) = I Z I e 2 r
11 March 2005 1 [ { } ] 3 1/3 2 + V ion (r) + V H (r) 3α 4π ρ σ(r) ϕ iσ (r) = ε iσ ϕ iσ (r) (1) KS Kohn-Sham [ 2 + V ion (r) + V H (r) + V σ xc(r) ] ϕ iσ (r) = ε iσ ϕ iσ (r) (2) 1 2 1 2 2 1 1 2 LDA Local
More informationuntitled
/Si FET /Si FET Improvement of tunnel FET performance using narrow bandgap semiconductor silicide Improvement /Si hetero-structure of tunnel FET performance source electrode using narrow bandgap semiconductor
More informationI 198805 198834 198835 198911 199505 199507 199607 199608 200203 200526 Living Hiroshima 200701 200702 II 1 2 P92-7 P92-2 P92-34 P01-32 P01-105 P16-1
24 7 20 26 8 5 1 2 3 4 1 47 3 51 3 63 3 2 3 4 B08 B08.1 4050 0060 1 2 1 2198805 198834 198835 4 1 I 198805 198834 198835 198911 199505 199507 199607 199608 200203 200526 Living Hiroshima 200701 200702
More information10_08.dvi
476 67 10 2011 pp. 476 481 * 43.72.+q 1. MOS Mean Opinion Score ITU-T P.835 [1] [2] [3] Subjective and objective quality evaluation of noisereduced speech. Takeshi Yamada, Shoji Makino and Nobuhiko Kitawaki
More information取扱説明書
ED-601 ED-501 ED-401 2 3 4 23 14 5 6 18 10 7 1 2 6 3 4 8 9 16 16 16 12 1 2 18 10 2 1 5 12 11 1 2 1 2 12 1 2 13 16 14 3 2 4 1 1 2 16 3 4 18 15 1 2 16 2 3 1 1 2 3 18 17 18 22 19 D A C 20 A B 22 B C D 22
More information: 1
235 1989: 1 236 SSM 1989: 12 (1) 237 19982000 238 1991 94 East Asian Middle Class 2000: 6Lui and Wong 1994 SSM 1990 1994 Lui and Wong 1994: 63_64 1992 SSM 1955 101995 20 69 1955 197519851995 1955 1975
More informationMolecular bases for plant circadian clock and flowering : How does the quintet tell the time? Cell, 101, 319-329(2000) 8) Schultz, T. F., Kiyosue, T., Yanovsky, M., Wada, M., Kay, S. 9) A. : Plant
More information2017 Hyogo International Junior Tournament 1 ITF Junior Circuit BS18 - BOYS SINGLES QUALIFYING Week of 30 AUG 2017 City,Country Hyogo, JPN Grade Grade
BS18 - BOYS SINGLES QUALIFYING 4 s Qualifiers 1 1576 JPN MITSUI, Yuta [1] 2 2393 INA HIDAYAT, Akbar 3 JPN HAYASHI, Kohei 4 JPN GOTO, Takumi 5 JPN KOMAGATA, Reiya 6 JPN HARADA, Kousei 7 JPN KANARI, Ren
More informationプリント
1 2 3 4 End 1 2 End End 5 6 NEW PIN NEW PIN 1 1 PIN CONF 2 PIN 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53
More informationThe Present Situation of Surface Treatment Technology for Stainless Steels Keinosuke TSUJI and Youichi NAKAGAWA Steel Co., Ltd., Now Osaka Branch) ( 1) Na2O 11.6, K2O 5.0, Al2O3 5.4, B2O3 8.6, SiO2 54.2,
More informationBulletin of Toyohashi Sozo Junior College , No. 19, San Antonio Municipal Auditorium San Antonio Municipal Auditorium 4. San A
Bulletin of Toyohashi Sozo Junior College 1 2002, No. 19, 1 12 1 2 San Antonio Municipal Auditorium 1. 2. 3. San Antonio Municipal Auditorium 4. San Antonio Municipal Auditorium 5. 6. San Antonio Municipal
More informationDatabase Center for Life Science Online Service Chiharu Ueguchi, Molecular mechanism and biological function of t
Chiharu Ueguchi, E-mail : cueguchi@agr.nagoya-u.ac.jp Molecular mechanism and biological function of the cytokinin signal tansduction pathway 1) Miller, C. 0., Skoog, F., von Saltza, M. H., Strong,
More informationVWmook_p54-65_CS6.indd
SAN FRANCISCO CARMEL BURBANK SAN LUIS OBISPO EL MIRAGE VENTURA POMONA LOS ANGELES DRIVE SF LA from to 54 photo / Yoko Takahashi text / Taku Takemura 48 5500 55 CAR LIFE 55 49 56 DRIVE from SF to LA 57
More information10 nm SThM Fig.1 AFM 6) AFM 7) Fig.1 AFM 0.1 N/m 100 pn 10 nn 8) SThM STM AFM RTD Resistance Temperature Device SNOM Scanning Near-field Optical Micro
@@@@@@@@@@@@@@ @@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@
More information7th埼玉オープン.pm6
6 7 6 7 6-0 6 7 0 6-6 -0 7-0 -7 8 8 - - 9 0 0 - -8 9 0-6 -8 0 8- -7-6 6-0 -7 7 0 8-8 (by Mitsuhashi) 6 0- -8 6 7 8 6 7 9 0-8 8 9 0 7 6 8 9-8 6-8 0 7-7 - 8 9 0 - -0 7 6 6-7 - - - 9- -6 9 0 8-8 -0 - -7-7
More informationi
i ii 1 6 9 12 15 16 19 19 19 21 21 22 22 23 26 32 34 35 36 3 37 5 5 4 4 5 iii 4 55 55 59 59 7 7 8 8 9 9 10 10 1 11 iv ozein Van Marum 1801 Cruiokshank Marum 1840 Schonbein 3 / atm 1 N 1892 50 1960 1970
More information技術創造の社会的条件
1999 10 21 21 i ... 1 1... 3 1-1. 20...3 1900 1945 3 1945 198x 4 198x 1999 5 1-2....7 1945 198x 7 HEMT 8 198x 1999 9 9 1-3....11 11 12 13 18 2 New Institutions... 21 2-1....21 22 24 26 2-2....27 28 29
More informationReview Column 1) Extavour, C. G., Akam, M. : Development, 130, 5869-5884 (2003) 2) Saitou, M. et al.: Philos. Trans. R. Soc. Lond. B. Biol. Sci., 358,1363-1370(2003) 3) Eddy, E. M. : Int. Rev.
More informationpic0510
2009 Vol. 31 No. 9 358 994 FBG FBG FBG 1001 996 1004 1009 1014 NTT 1019 1024 1029 1037 1041 9 Zernike 4 1048 52. 1055 6 1060 VFX Dr. SPIDER 1079 988 PN LED 967 O plus E News 981 URCF7.22 4K 137 1 9 23
More information1: NTT Yahoo! , , , , CIAIR CIAIR- ICSD CIAIR-ICSD 6 dlwz lg 3 30 dl wz 2 60 dl O D O:
Project Next NLP NTT 1 1 15 1 [10] higashinaka.ryuichiro@lab.ntt.co.jp funakoshi@jp.honda-ri.com araki@kit.ac.jp htsukahara@d-itlab.co.jp yuka3.kobayashi@toshiba.co.jp masahiro-mi@is.naist.jp 1. 2. 3.
More informationUWB a) Accuracy of Relative Distance Measurement with Ultra Wideband System Yuichiro SHIMIZU a) and Yukitoshi SANADA (Ultra Wideband; UWB) UWB GHz DLL
UWB a) Accuracy of Relative Distance Measurement with Ultra Wideband System Yuichiro SHIMIZU a) and Yukitoshi SANADA (Ultra Wideband; UWB) UWB GHz DLL UWB (DLL) UWB DLL 1. UWB FCC (Federal Communications
More informationT O H O K U U N I V E R S I T Y 16152005.2 C O N T E N T S HASANUDIN ABDURAKHMAN FEUERSTEIN MARIO ANDREAS The Institute of Physics Smart Materials and Structures DRAM MOS nm International
More information10 IDM NEC
No.29 1 29 SEAJ SEAJ 2 3 63 1 1 2 2002 2003 6 News 9 IEDM 11 13 15 16 17 10 IDM NEC 3 12 3 10 10 2 3 3 20 110 1985 1995 1988 912001 1 1993 95 9798 199010 90 200 2 1950 2 1950 3 1311 10 3 4 4 5 51929 3
More information2013 London New York Paris 2013 Tokyo Singapore
01 London New York Paris 01 Tokyo Singapore 01 10 Global Power City Index GPCI 008 Global Power City Index GPCI-01 GPCI YEAR BOOK 01 Global Power City Index GPCI 1... 40 6 4 5 4. 5. Global Power City
More information1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15. 1. 2. 3. 16 17 18 ( ) ( 19 ( ) CG PC 20 ) I want some rice. I want some lice. 21 22 23 24 2001 9 18 3 2000 4 21 3,. 13,. Science/Technology, Design, Experiments,
More informationDEIM Forum 2017 E Netflix (Video on Demand) IP 4K [1] Video on D
DEIM Forum 2017 E1-1 700-8530 3-1-1 E-mail: inoue-y@mis.cs.okayama-u.ac.jp, gotoh@cs.okayama-u.ac.jp 1. Netflix (Video on Demand) IP 4K [1] Video on Demand ( VoD) () 2. 2. 1 VoD VoD 2. 2 AbemaTV VoD VoD
More informationFig.2 Optical-microscope image of the Y face-cross sec- tion of the bulk domain structure of a 0.4-mm-thick MgO-LiNbO3 crystal after chemical etching.
Blue EGreen Solid State Lasers Using MgO-LiNbO3 Periodic Domain Inverted Bulk Crystal and Their Applications Koji KAMIYAMA, Yoji OKAZAKI, and Akinori HARADA Fuji Photo Film. Co., Ltd., Miyanodai Technology
More information1 d 6 L S p p p p-d d 10Dq 1 ev p-d d 70 % 1: NiO [3] a b CI c [5] NiO Ni [ 1(a)] Ni 2+ d 8 d 7 d 8 + hν d 7 + e d 7 1(b) d 7 p Ni 2+ t 3 2g t3 2g e2
3 3.1 3.1.1 - d s p d 3d d d d d d d 10 23 d d 1954 [1] d d 1970 I-II-VI 2 II-VI II 1:1 I III CuAlS 2 Al 3+ d 5 Fe 3+ d 5 S 3p d 6 L L [2] configuration interaction: CI d 5 1 1 d 6 L S p p p p-d d 10Dq
More information寄稿論文 規則性無機ナノ空間が創り出す新しい触媒能 | 東京化成工業
MCM-41 M41 MCM-41 M41 2 3 m 2 /g nm nm Mn Ti Ti H N 2 S Ti-MCM-41, H H N H H 2 2 -Urea, CH 2 Cl 2, H 2 S + S 1b 2b 3b 54%, 58% ee Ti M41 H 2 As 4 ZP 4 ZP ZS ZS 5 Me Me Me Me M41 / 15 mg MeH 1.0 mmol 89%
More information2.R R R R Pan-Tompkins(PT) [8] R 2 SQRS[9] PT Q R WQRS[10] Quad Level Vector(QLV)[11] QRS R Continuous Wavelet Transform(CWT)[12] Mexican hat 4
G-002 R Database and R-Wave Detecting System for Utilizing ECG Data Takeshi Nagatomo Ikuko Shimizu Takeshi Ikeda Akio Sashima Koichi Kurumatani R R MIT-BIH R 90% 1. R R [1] 2 24 16 Tokyo University of
More information*._.W.\..Vol.8-2/1-4/SFG
Banks, J.A. (2003). Teaching Strategies for Ethnic Studies (7th ed.). Boston: Allyn and Bacon. Banks, J.A. (2004). Democratic Citizenship Education in Multicultural Societies. In J. A. Banks (Ed.), Diversity
More information野岩鉄道の旅
29th 5:13 5:34 5:56 6:00 6:12 6:20 6:21 6:25 6:29 6:31 6:34 6:38 6:40 6:45 6:52 6:56 7:01 7:07 7:11 7:32 7:34 7:50 7:58 8:03 8:17 8:36 8:44 5:50 5:54 6:15 6:38 6:39 6:51 6:59 6:59 7:03 7:08 7:08 7:11 7:15
More informationResearch Question Unacceptable Files:FS GQM 1 2 GQM s r 2.1 GQM Goal-Question-Metric GQM [2] GQM 3 Qustions GQM 3 GQM 2.2 UFs AFs Acceptable Fi
1,a) 1 1,b) 1,c) 2 2 2 Unacceptable Files:FS (Acceptable Files:Fs) UFs UFs GQM GQM C++ 0.7 1. 1 [1] Goal-Question-Metric GQM [2] GQM 1 2 a) 821821@toki.waseda.jp b) washizaki@waseda.jp c) fukazawa@waseda.jp
More information( )
17 82118. 17 (). 008 A02 305-0801 1-1 TEL FAX 029-864-5463 (EXT ) 029-864-3209 e-mail kenichi.tanaka@kek.jp + + 17 18 (41) (39) (36) (54) (34) (57) - - 4,100 770 1,730 500 200 900 3,970 1,400 530 900 220
More information01
2 0 0 7 0 3 2 2 i n d e x 0 7. 0 2. 0 3. 0 4. 0 8. 0 9. 1 0. 1 1. 0 5. 1 2. 1 3. 1 4. 1 5. 1 6. 1 7. 1 8. 1 9. 2 0. 2 1. 2 3. 2 4. 2 5. 2 6. O k h o t s k H a m a n a s u B e e f 0 2 http://clione-beef.n43.jp
More informationNew Interface Photo by hiroohi http://flickr.com/photos/rainboweyes/2747484161/ New Standard Photo by hiroohi http://flickr.com/photos/rainboweyes/2747484331/ New Technology Photo
More information1).1-5) - 9 -
- 8 - 1).1-5) - 9 - ε = ε xx 0 0 0 ε xx 0 0 0 ε xx (.1 ) z z 1 z ε = ε xx ε x y 0 - ε x y ε xx 0 0 0 ε zz (. ) 3 xy ) ε xx, ε zz» ε x y (.3 ) ε ij = ε ij ^ (.4 ) 6) xx, xy ε xx = ε xx + i ε xx ε xy = ε
More informationKyoto University 2009 1
K Y O T O U N I V E R S I T Y Kyoto University 2009 1 Kyoto University 2009 2 3 Kyoto University 2009 Kyoto University 2009 4 5 Kyoto University 2009 Kyoto University 2009 6 Kyoto University 2009 7 Kyoto
More informationスライド 1
Matsuura Laboratory SiC SiC 13 2004 10 21 22 H-SiC ( C-SiC HOY Matsuura Laboratory n E C E D ( E F E T Matsuura Laboratory Matsuura Laboratory DLTS Osaka Electro-Communication University Unoped n 3C-SiC
More information知能と情報, Vol.30, No.5, pp
1, Adobe Illustrator Photoshop [1] [2] [3] Initital Values Assignment of Parameters Using Onomatopoieas for Interactive Design Tool Tsuyoshi NAKAMURA, Yuki SAWAMURA, Masayoshi KANOH, and Koji YAMADA Graduate
More information1 1.1 hν A(k,ε)[ k ρ(ω)] [1] A(k,ε) ε k μ f(ε) 1/[1 + exp( ε μ k B T )] A(k,ε)f(ε) ρ(ε)f(ε) A(k,ε)(1 f(ε)) ρ(ε)(1 f(ε)) A(k,ε) σ(ω) χ(q,ω) k B T ev k
62 2017 7 25-29 - ARPES ARPES ARPES - ARPES 1 1.1 1.2 1.3 1.4 1.4.1 1.4.2 1.4.3 1.5 2 2.1 2.2 2.3 BCS 2.4 1 1.1 hν A(k,ε)[ k ρ(ω)] [1] A(k,ε) ε k μ f(ε) 1/[1 + exp( ε μ k B T )] A(k,ε)f(ε) ρ(ε)f(ε) A(k,ε)(1
More informationUndulator.dvi
X X 1 1 2 Free Electron Laser: FEL 2.1 2 2 3 SACLA 4 SACLA [1]-[6] [7] 1: S N λ [9] XFEL OHO 13 X [8] 2 2.1 2(a) (c) z y y (a) S N 90 λ u 4 [10, 11] Halbach (b) 2: (a) (b) (c) (c) 1 2 [11] B y = n=1 B
More information04-“²†XŒØ‘�“_-6.01
Bull. Natn. Sci. Mus., Tokyo, Ser. E, 28, pp. 31 47, December 22, 2005 169 0073 3 23 1 153 8904 4 6 1 270 2261 2 16 4 124 0014 2 10 15 523 0058 961 The Mechanism of Automatic Display for the Temporal Hour
More information大学案内2005-1.inx
4 Kyoto University 2005 Kyoto University 2005 1 2 Kyoto University 2005 Kyoto University 2005 3 4 Kyoto University 2005 Kyoto University 2005 5 6 Kyoto University 2005 Introduction to the Beauties of Kyoto
More informationO157 6/23 7/4 6 25 1000 117,050 6 14:00~15:30 1 2 22 22 14:30~15:30 8 12 1 5 20 6 20 10 11 30 9 10 6 1 30 6 6 0 30 6 19 0 3 27 6 20 0 50 1 2 6 4 61 1 6 5 1 2 1 2 6 19 6 4 15 6 1 6 30 6 24 30 59
More information1960 1960 Peace Corps 1961 4 1985 17 2 3 2 1962 Voluntary Service Overseas VSO 1970 3 2 JICA 1985 2001 2004 2004 2005 2011 2 3 1 No. 637 2014 12 27
Okabe Yasunobu JOCV: Japan Overseas Cooperation Volunteers 1965 2014 9 3 9559 88 3 JICA ODA 3 1 20 2 3 50 4 3 1 1 1 3 3 1 1960 2010 25 No. 637 2014 12 26 1960 1960 Peace Corps 1961 4 1985 17 2 3 2 1962
More information20 m Au 2. 現行のマイクロバンプ形成技術における課題 Au Au Au 2 WB 11 m m 1 m 2008 Au FC m 10 m 30 m OTK Au 表 1 マイクロバンプ形成におけるめっき法の比較 3. 無電解めっきによる Au
Fabrication technology of Au micro-bump by electroless plating. 関東化学株式会社技術 開発本部中央研究所第四研究室德久智明 Tomoaki Tokuhisa Central Research Laboratory, Technology & Development Division, Kanto Chemical Co., Inc. 1.
More informationTHE SIMPLIFIED EVALUATION OF POST-EXERCISE VAGAL REACTIVATION AND APPLICATION IN ATHLETIC CONDITIONING JUN SUGAWARA, YUTAKA HAMADA, YOSHIHARU NABEKURA, TAKAHIKO NISHIJIMA and MITSUO MATSUDA It has been
More informationカリキュラム構成及び履修方法
2008 10 22 Global Power City Index GPCI Global Power City Index - 1 - 106-6110 6-10-1 TEL:03-6406-6800/5945 E-mail:miwa@mori.miinet.jp - 2 - : () : : J UCLA : : - 3 - - 4 - - 5 - - 6 - STEP 45 63 Quality
More informationPolicy Study No. 3 新 ビジネスモデルによる 日 本 企 業 の 強 さの 変 革 - 科 学 技 術 新 産 業 創 造 立 国 実 現 へのシナリオ - 1999 年 5 月 日 本 語 版 全 文 科 学 技 術 庁 科 学 技 術 政 策 研 究 所 第 1 研 究 グループ 前 田 昇 21 1 20 11 IT 11 12 IT 13 18 20 25 2 27 31
More informationVM VM VM VM I/O UVBond VM % 3.2% 2 VM 3 UVBond VM VM VM VM VM VM SSH VNC VM Google [16] 28% [11] 35% [4] VM 1 IaaS VM VM VM VM VM [5]
34 (2017 ) VM IaaS IaaS VM VM VM VM VM UVBond UVBond VM VM VM VM VM UVBond Xen VM VM 1 IaaS VM VM VM VM VNC SSH VM VM VM VM VM VM Keisuke Inokuchi, Kenichi Kourai,, Kyushu Institute of Technology. VM VM
More informationNL2
Aug. 2001 ISSN 1346-6992 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234
More information光学
Si Nano-Photodiode with Surface-Plasmon Antenna Junichi FUJIKATA, Keishi OHASHI and Toru MOGAMI We studied the surface plasmon SP resonance effect on Si nano-photodiode PD characteristics for future optical
More information西総第 号
1 2 意見 審議結果 3 1 意見 審議結果 4 意見 審議結果 5 (%) (%) 20 23 24 25 26 27 30 31 10 13 14 15 16 17 18 19 20 21 22 23 24 25 6 (%) (%) 10 1120 2130 3140 4150 5160 6170 71 7 1 S SAIJO S 4 S S 8 S S S S 9 2 2 16 11 1 16
More informationTHE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS TECHNICAL REPORT OF IEICE k
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS TECHNICAL REPORT OF IEICE. 565 0871 2 1 606 8501 606 8501 651 2103 3 1 E-mail: k-nakamura@comm.eng.osaka-u.ac.jp ARToolKit 1. 1 1 2.
More information東北大学大学院理学研究科物理学専攻・数学専攻・天文学専攻
2. Program Members and Organization in 2011 Fiscal Year: 2.1. Program Members 2. Program Members and Organization in 2011 Fiscal Year 2.1. Program Members Name Representative Akihisa Inoue Affiliated Department,
More information第17回ニュージェネレーション_cs4.indd
New Generation Tennis JPTA ALL JAPAN JUNIOR TENNIS TOURNAMENT U14U12 20152.20Fri 21Sat 20152.21Sat 22Sun JPTA ALL JAPAN JUNIOR TENNIS TOURNAMENT U10 Japan Professional Tennis Association New Generation
More information1) Murphy, T.H., Miyamoto, M., Sastre, A., Schnaar, R.L., Coyle, J.T.: Neuron, 2, 1547-1558 (1989) 2) Pellegrini-Giampietro, D.E., Cherici, G., Ale siani,m., Carla, V., Moroni, F.: J. Neuro science,10,
More informationuntitled
11 Management & Technology for Creative Kyoto 2012. 10 2012. 10 Management & Technology for Creative Kyoto 12 13 Management & Technology for Creative Kyoto 2012. 10 2012. 10 Management & Technology for
More informationKyoto University of Art and Design Interdisciplinary Research Center for Performing Arts Annual Report
Kyoto University of Art and Design Interdisciplinary Research Center for Performing Arts Annual Report Vol.1 ANNUAL REPORT URL hp://www.k-pac.org/kyoten/ hp://www.kpac.org/kyoten/en/ / 201432930 13 1320
More information