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1 SPECIFICATION (45A/12V-IGBT Module) This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Device Nme : IGBT Module (RoHS complint product) Type Nme : 2MBI45VE-12-5 Spec. No. : DRAWN DATE Mr.-2nd-'11 NAME S.Horie APPROVAL CHECKED Mr.-2nd-'11 S.Ogw Mr.-2nd-'11 M.Kosk O.Ikw S.Igrshi DWG.No. 1 / 15

3 Type Nme: 2MBI45VE-12-5 (RoHS complint products) 1. Outline Drwing ( Unit : mm ) This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of 2. Equivlent Circuit C1 Weight: 47g (typ.) () G1 E1 C2E1 G2 E2 E2 3 / 15

4 This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of 3. Absolute Mximum Rtings (t Tc= 25 C unless otherwise specified) Items Symbols Conditions Mximum Rtings Units Collector-Emitter voltge Gte-Emitter voltge VCES VGES 12 ±2 V V Ic Continuous Tc=1 C 45 Tc=25 C 52 Collector current Ic pulse 1ms 9 -Ic 45 -Ic pulse 1ms 9 Collector power dissiption Pc 1 device 335 W Junction temperture Tj 175 Operting junction temperture Tjop 15 (under switching conditions) C Cse temperture Tc 125 Storge temperture Tstg -4 ~ 125 Isoltion voltge between terminl nd copper bse (*1) Viso AC: 1min. 25 VAC Screw Mounting (*2) - 6. Torque Terminls (*3) - 5. N m (*1) All terminls should be connected together during the test. (*2) Recommendble Vlue : Nm (M5 or M6) (*3) Recommendble Vlue : Nm (M6) 4 / 15

5 4. Electricl chrcteristics (t Tj= 25 C unless otherwise specified) NOTICE: The externl gte resistnce (Rg) shown below is one of our recommend vlue for the purpose of minimum switching loss. However the optimum Rg depends on circuit configurtion nd/or environment. We recommend tht the Rg hs to be crefully chosen bsed on considertion if IGBT module mtches design criteri, for exmple, switching loss, EMC/EMI, spike voltge, surge current nd no unexpected oscilltion nd so on. This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Items Symbols Conditions ChrcteristIcs min. typ. mx. Units Zero gte voltge Collector current ICES VGE=V, VCE=12V ma Gte-Emitter lekge current IGES VCE=V, VGE=±2V na Gte-Emitter threshold voltge VGE(th) VCE=2V, Ic=45mA V VCE(st) Tj=25 C (terminl) VGE=15V, Ic=45A Tj=125 C Collector-Emitter Tj=15 C 2.45 V sturtion voltge VCE(st) Tj=25 C (chip) VGE=15V, Ic=45A Tj=125 C Tj=15 C 2.2 Internl gte resistnce Rg(int) Ω () Input cpcitnce Cies VCE=1V, VGE=V, ƒ=1mhz nf ton Turn-on time tr Vcc=6V, Ic=45A,VGE=±15V, tr(i) nsec Rg=1Ω, Tj=15 C, Ls=3nH toff Turn-off time tf VF Tj=25 C (terminl) VGE=V, IF=45A Tj=125 C Forwrd on voltge Tj=15 C 1.95 V VF Tj=25 C (chip) VGE=V, IF=45A Tj=125 C Tj=15 C 1.85 Reverse recovery time trr IF=45A nsec 5. Therml resistnce chrcteristics Chrcteristics Items Symbols Conditions min. typ. mx. IGBT Therml resistnce(1device) Rth(j-c) FWD Contct therml resistnce Rth(c-f) with Therml Compound (1device) (*1) (*1) This is the vlue which is defined mounting on the dditionl cooling fin with therml compound. 6. Recommend wy of module mounting to Het sink (1) Initil : 1/3 specified torque, sequence (1) (2) (3) (4) (2) Finl :Full specified torque ( Nm),sequence(4) (3) (2) (1) Units C/W (3) (2) (1) (4) Mounting holes Het sink Module 5 / 15

6 7. Indiction on module Disply on the module lbel - Logo of production - Type nme : 2MBI45VE IC, VCES rting : 45A 12V - Lot No. (5 digits) - Plce of mnufcturing (code) - Br code 8. Applicble Ctegory This specifiction is pplied to IGBT Module nmed 2MBI45VE Storge nd trnsporttion notes ( 保管運搬上運搬上の注意事項 ) The module should be stored t stndrd temperture of 5 to 35 C nd humidity of 45 to 75%. 常温常湿保存が望ましい (5~35 C, 45~75%) Store modules in plce with few temperture chnges in order to void condenstion on the module surfce. 急激な温度変化のなきこと ( モジュール表面が結露しないこと ) This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Avoid exposure to corrosive gses nd dust. 腐食性ガスの発生場所塵埃の多い場所は避けること Avoid excessive externl force on the module. 製品に荷重がかからないように十分注意すること Store modules with unprocessed terminls. モジュールの端子は未加工の状態で保管すること Do not drop or otherwise shock the modules when trnsporting. 製品の運搬時に衝撃を与えたり落下させたりしないこと Do not pull the springs when trnsporting nd hndling. 製品の運搬時や取り扱い時にスプリングを引っ張らないこと 1. Definitions of switching time V CC L S R G V GE L V CE V V A V GE V CE I C 9% t rr 1% 1% t r(i) I rr ~ ~ ~ I C V CE 9% 9% 1% t f V I C 11. Pcking nd lbeling Disply on the pcking box - Logo of production - Type nme - Lot No - Products quntity in pcking box t on t r t off 6 / 15

7 12. List of mterils ( 材料リスト ) This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of No Prts Mteril (min) Ref. Bse Plte Cu Ni plting Solder (Under Isoltion substrte ) Sn / Sb (Not drwn in bove) Isoltion substrte Al 2 O 3 + Cu Isoltion substrte AlN + Cu Solder (Under chip / Under terminl) Sn / Ag bse (Not drwn in bove) IGBT chip Silicon (Not drwn in bove) FWD chip Silicon (Not drwn in bove) Min terminl Cu Ni plting or Sn plting Sub terminl Cu or Brss Ni plting or Sn plting Wiring Aluminum Adhesive Silicone resin Cse PPS resin UL 94V- Ring Fe Trivlent Chromte tretment Silicone Gel Silicone resin Nut Glove PPS resin UL 94V- Nut Fe Trivlent Chromte tretment Lbel PET (Not drwn in bove) 7 / 15

8 13. Relibility test results This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Mechnicl Tests Environment Tests Relibility Test Items Test items Test methods nd conditions (Aug.-21 edition) smple 1 Terminl Strength Pull force : 2N (Controle terminl) 4N (Min terminl) Test Method 41 method Ⅰ 5 ( : 1 ) (Pull test) Test time : 1±1 sec. 2 Mounting Strength Screw torque : 3. ~ 6. N m (M5, M6) Test Method 42 5 ( : 1 ) : method Ⅱ Test time : 1±1 sec. 3 Vibrtion Rnge of frequency : 1 ~ 5Hz Test Method 43 5 ( : 1 ) Sweeping time : 15 min. Reference 1 Accelertion : 1m/s 2 Condition code B Sweeping direction : Ech X,Y,Z xis Test time : 6 hr. (2hr./direction) 4 Shock Mximum ccelerti : 5m/s 2 Test Method 44 5 ( : 1 ) Pulse width : 1.msec. Condition code B Direction : Ech X,Y,Z xis Test time : 3 times/direction 1 High Temperture Storge temp. : 125 ± 5 C Test Method 21 5 ( : 1 ) Storge Test durtion : 1hr. 2 Low Temperture Storge temp. : -4 ± 5 C Test Method 22 5 ( : 1 ) Storge Test durtion : 1hr. 3 Temperture Storge temp. : 85 ± 2 C Test Method 13 5 ( : 1 ) Humidity Reltive humidity : 85 ± 5% Test code C Storge Test durtion : 1hr. 4 Unsturted Test temp. : 12 ± 2 C Test Method 13 5 ( : 1 ) Pressurized Test humidity : 85 ± 5% Test code E Vpor Test durtion : 96hr. 5 Temperture Low temp. -4 ± 5 C Cycle Test temp. : High temp. 125 ± 5 C RT 5 ~ 35 C Dwell time : High ~ RT ~ Low ~ RT 1hr..5hr. 1hr..5hr. Number of cycles : 1 cycles 6 Therml Shock Test temp. : High temp C Used liquid : Wter with ice nd boiling wter Dipping time : 5 min. pr ech temp. Trnsfer time : 1 sec. Number of cycles : 1 cycles Reference norms EIAJ ED-471 Test Method 15 Test Method 37 method Ⅰ Condition code B Number of Test ctegories Acceptnce number 5 ( : 1 ) 5 ( : 1 ) 8 / 15

9 Test items Relibility Test Items Test methods nd conditions 1 High temperture Reverse Bis Test temp. : Tj = 15 (- /+5 ) (for Collector - Emitter) Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to C-E VGE = V Test durtion : 1hr. 2 High temperture Bis (for gte) Test temp. : Tj = 15 (- /+5 ) Reference norms EIAJ ED-471 (Aug.-21 edition) Number of smple Test ctegories Acceptnce number Test Method 11 5 ( : 1 ) Test Method 11 5 ( : 1 ) This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Endurnce Tests Item Bis Voltge : VC = VGE = +2V or -2V Bis Method : Applied DC voltge to G-E VCE = V Test durtion : 1hr. 3 Temperture Humidity Bis Test temp. : 85±2 o C Reltive humidit : 85±5% Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to C-E VGE = V Test durtion : 1hr. 4 Intermitted ON time : 2 sec. Operting Life OFF time : 18 sec. (Power cycle) Test temp. : 1±5 deg ( for IGBT ) Tj 15, T=25±5 No. of cycles : 15 cycles Chrcteristic Symbol Filure Criteri Filure criteri Lower limit Upper limit Test Method 12 5 ( : 1 ) Condition code C Test Method 16 5 Electricl Lekge current ICES - USL 2 ma chrcteristic ±IGES - USL 2 µa Gte threshold voltge Sturtion voltge Forwrd voltge VGE(th) VCE(st) VF LSL USL 1.2 USL 1.2 USL 1.2 ma V V Therml IGBT VGE mv - USL 1.2 resistnce or VCE FWD VF - USL 1.2 mv Isoltion voltge Viso Broken insultion - Visul Visul inspection nd the others inspection Peeling Plting - The visul smple - LSL : Lower specified limit. Note : USL : Upper specified limit. Ech prmeter mesurement red-outs shll be mde fter stbilizing the components t room mbient for 2 hours minimum, 24 hours mximum fter removl from the tests. And in cse of the wetting tests, for exmple, moisture resistnce tests, ech component shll be mde wipe or dry completely before the mesurement. Unit Note ( : 1 ) 9 / 15

10 Relibility Test Results This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Test ctegories Mechnicl Tests Environment Tests Endurnce Tests 1 Terminl Strength Test Method 41 5 (Pull test) MethodⅠ 2 Mounting Strength Test Method 42 5 methodⅡ 3 Vibrtion Test Method 43 5 Condition code B 4 Shock Test Method 44 5 Condition code B 5 Solderbitlity Test Method 33 5 Condition code A 6 Resistnce to Soldering Het Test Method 32 5 Condition code A 1 High Temperture Storge Test Method Low Temperture Storge Test Method Temperture Humidity Test Method 13 5 Storge Test code C 4 Unsturted Test Method 13 5 Pressurized Vpor Test code E 5 Temperture Cycle Test Method Therml Shock Test items 1 High temperture Reverse Bis Reference norms EIAJ ED-471 Number of test smple Number of filure smple Test Method 37 5 method Ⅰ Condition code A Test Method High temperture Bis Test Method 11 5 ( for gte ) 3 Temperture Humidity Bis Test Method 12 5 Condition code C 4 Intermitted Operting Life Test Method 16 5 (Power cycling) ( for IGBT ) 1 / 15

11 This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Collector current vs. Collector-Emitter voltge (typ.) Tj= 25 C / chip Collector current: Ic [A] Collector current vs. Collector-Emitter voltge (typ.) VGE= 15V / chip Collector Current: Ic [A] Collector-Emitter Voltge: VCE [V] Gte Cpcitnce vs. Collector-Emitter Voltge VGE= V, ƒ= 1MHz, Tj= 25 C Gte Cpcitnce: Cies, Coes, Cres [nf] *** VGE=2 15V Collector-Emitter voltge: VCE [V] Coes Cies Cres 12V Tj=25 C125 C 1V 8V 15 C Collector-Emitter voltge: VCE [V] Collector current vs. Collector-Emitter voltge (typ.) Tj= 15 C / chip Collector current: Ic [A] Collector-Emitter Voltge: VCE [V] Gte-Emitter voltge: VGE [V] Collector-Emitter voltge vs. Gte-Emitter voltge Tj= 25 C / chip VGE= 2V15V Collector-Emitter voltge: VCE [V] Gte-Emitter Voltge: VGE [V] Dynmic Gte Chrge (typ.) Vcc=6V, Ic=45A, Tj= 25 C VCE VGE 12V 1V 8V Ic=9A Ic=45A Ic=225A Gte chrge: Qg [nc] () Collector-Emitter voltge: VCE [V] 11 / 15

12 Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=1Ω, Tj=125 C 1 Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=1Ω, Tj=15 C 1 Switching time: ton, tr, toff, tf [nsec] toff ton tr tf Switching time: ton, tr, toff, tf [nsec] toff ton tr tf This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Switching time: ton, tr, toff, tf [nsec] Switching loss: Eon, Eoff, Err [mj/pulse] Collector current: Ic [A] Switching time vs. Gte resistnce (typ.) Vcc=6V, Ic=45A, VGE=±15V, Tj=125 C toff ton tr Gte resistnce: Rg [Ω] Switching loss vs. Gte resistnce (typ.) Vcc=6V, Ic=45A, VGE=±15V, Tj=125 C Tj=125 o C Tj=15 o C tf Eon Eoff Err Gte resistnce: Rg [Ω] Switching loss: Eon, Eoff, Err [mj/pulse] Switching loss vs. Collector current (typ.) Vcc=6, VGE=±15V, Rg=1Ω, Tj=125 C Reverse bis sfe operting re (mx.) +VGE=15V, -VGE=15V, Rg=1Ω, Tj=15 C Collector current: Ic [A] Collector current: Ic [A] Tj=125 o C Tj=15 o C Collector current: Ic [A] Collector-Emitter voltge: VCE [V] (Min terminls) Eoff Eon Err 12 / 15

13 This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of Forwrd current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Reverse recovery current: Irr [A] Forwrd Current vs. Forwrd Voltge (typ.) chip Reverse Recovery Chrcteristics (typ.) Vcc=6V, VGE=±15V, Rg=1Ω, Tj=125 C C Tj=25 C 125 C Forwrd on voltge: VF [V] Forwrd current: IF [A] FWD sfe operting re (mx.) Tj=15 C Irr trr () Pmx=6kW Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Therml resistnse: Rth(j-c) [ C/W] *** Reverse Recovery Chrcteristics (typ.) Vcc=6V, VGE=±15V, Rg=1Ω, Tj=125 C Forwrd current: IF [A] Trnsient Therml Resistnce (mx.) Pulse Width : Pw [sec] Irr trr FWD IGBT τ [sec] Rth IGBT [ C/W] FWD () Collector-Emitter voltge: VCE [V] (Min terminls) 13 / 15

14 Wrnings This product shll be used within its mximum rting (voltge, current, nd temperture). This product my be broken in cse of using beyond the mximum rtings. 製品の最大定格 ( 電圧, 電流, 温度等 ) の範囲内で御使用下さい最大定格を超えて使用すると素子が破壊する場合があります Connect dequte fuse or protector of circuit between three-phse line nd this product to prevent the equipment from cusing secondry destruction, such s fire, its spreding, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて火災, 爆発, 延焼等の 2 次破壊を防いでください Use this product fter relizing enough working on environment nd considering of product's relibility life. This product my be broken before trget life of the system in cse of using beyond the product's relibility life. 製品の使用環境を十分に把握し製品の信頼性寿命が満足できるか検討の上本製品を適用して下さい製品の信頼性寿命を超えて使用した場合装置の目標寿命より前に素子が破壊する場合があります This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of If the product hd been used in the environment with cid, orgnic mtter, nd corrosive gs ( hydrogen sulfide, sulfurous cid gs), the product's performnce nd ppernce cn not be ensured esily. 酸有機物腐食性ガス ( 硫化水素, 亜硫酸ガス等 ) を含む環境下で使用された場合製品機能外観等の保証はできません Use this product within the power cycle curve (Technicl Rep.No. : MT5F12959). Power cycle cpbility is clssified to delt-tj mode which is stted s bove nd delt-tc mode. Delt-Tc mode is due to rise nd down of cse temperture (Tc), nd depends on cooling design of equipment which use this product. In ppliction which hs such frequent rise nd down of Tc, well considertion of product life time is necessry. 本製品はパワーサイクル寿命カーブ以下で使用下さい ( 技術資料 No.: MT5F12959) パワーサイクル耐量にはこの Tj による場合の他に Tc による場合がありますこれはケース温度 (Tc) の上昇下降による熱ストレスであり本製品をご使用する際の放熱設計に依存しますケース温度の上昇下降が頻繁に起こる場合は製品寿命に十分留意してご使用下さい Never dd mechnicl stress to deform the min or control terminl. The deformed terminl my cuse poor contct problem. 主端子及び制御端子に応力を与えて変形させないで下さい端子の変形により接触不良などを引き起こす場合があります Use this product with keeping the cooling fin's fltness between screw holes within 5µm t 1mm nd the roughness within 1µm. Also keep the tightening torque within the limits of this specifiction. Too lrge convex of cooling fin my cuse isoltion brekdown nd this my led to criticl ccident. On the other hnd, too lrge concve of cooling fin mkes gp between this product nd the fin bigger, then, therml conductivity will be worse nd over het destruction my occur. 冷却フィンはネジ取り付け位置間で平坦度を 1mm で 5µm 以下表面の粗さは 1µm 以下にして下さい過大な凸反りがあったりすると本製品が絶縁破壊を起こし重大事故に発展する場合がありますまた過大な凹反りやゆがみ等があると本製品と冷却フィンの間に空隙が生じて放熱が悪くなり熱破壊に繋がることがあります In cse of mounting this product on cooling fin, use therml compound to secure therml conductivity. If the therml compound mount ws not enough or its pplying method ws not suitble, its spreding will not be enough, then, therml conductivity will be worse nd therml run wy destruction my occur. Confirm spreding stte of the therml compound when its pplying to this product. (Spreding stte of the therml compound cn be confirmed by removing this product fter mounting.) 素子を冷却フィンに取り付ける際には熱伝導を確保するためのコンパウンド等をご使用ください又塗布量が不足したり塗布方法が不適だったりするとコンパウンドが十分に素子全体に広がらず放熱悪化による熱破壊に繋がる事がありますコンパウンドを塗布する際には製品全面にコンパウンドが広がっている事を確認してください ( 実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます ) It shll be confirmed tht IGBT's operting locus of the turn-off voltge nd current re within the RBSOA specifiction. This product my be broken if the locus is out of the RBSOA. ターンオフ電圧電流の動作軌跡がRBSOA 仕様内にあることを確認して下さい RBSOAの範囲を超えて使用すると素子が破壊する可能性があります 14 / 15

15 Wrnings If excessive sttic electricity is pplied to the control terminls, the devices my be broken. Implement some countermesures ginst sttic electricity. 制御端子に過大な静電気が印加された場合素子が破壊する場合があります取り扱い時は静電気対策を実施して下さい Never dd the excessive mechnicl stress to the min or control terminls when the product is pplied to equipments. The module structure my be broken. 素子を装置に実装する際に主端子や制御端子に過大な応力を与えないで下さい端子構造が破壊する可能性があります In cse of insufficient -VGE, erroneous turn-on of IGBT my occur. -VGE shll be set enough vlue to prevent this mlfunction. (Recommended vlue : -VGE = -15V) 逆バイアスゲート電圧 -VGEが不足しますと誤点弧を起こす可能性があります誤点弧を起こさない為に-VGEは十分な値で設定して下さい ( 推奨値 : -VGE = -15V ) This mteril nd the informtion herein is the property of They shll for the mnufcturing purposes without the express written consent of In cse of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite rm IGBT my occur. Use this product in the most suitble drive conditions, such s +VGE, -VGE, RG, CGE to prevent the mlfunction. ターンオン dv/dt が高いと対向アームのIGBTが誤点弧を起こす可能性があります誤点弧を起こさない為の最適なドライブ条件 (+VGE, -VGE, RG, CGE) でご使用下さい This product my be broken by vlnche in cse of VCE beyond mximum rting VCES is pplied between C-E terminls. Use this product within its mximum voltge. VCESを超えた電圧が印加された場合アバランシェを起こして素子破壊する場合があります VCEは必ず最大定格の範囲内でご使用下さい Use the sme lot product only for prllel connection. If different lot product is used for prllel connection without confirmtion of Fuji Electric Co.Ltd., the product performnce cnnot be ensured. この製品をパラレル接続する場合は同一ロットのものを使用してください富士電機への確認なく異なるロットの製品をパラレル接続で使用した場合製品の保証はできません Cutions Fuji Electric is constntly mking every endevor to improve the product qulity nd relibility. However, semiconductor products my rrely hppen to fil or mlfunction. To prevent ccidents cusing injury or deth, dmge to property like by fire, nd other socil dmge resulted from filure or mlfunction of the Fuji Electric semiconductor products, tke some mesures to keep sfety such s redundnt design, spred-fire-preventive design, nd mlfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めていますしかし半導体製品は故障が発生したり誤動作する場合があります富士電機製半導体製品の故障または誤動作が結果として人身事故火災等による財産に対する損害や社会的な損害を起こさないように冗長設計延焼防止設計誤動作防止設計など安全確保のための手段を講じて下さい The ppliction exmples described in this specifiction only explin typicl ones tht used the Fuji Electric products. This specifiction never ensure to enforce the industril property nd other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は富士電機製品を使用した代表的な応用例を説明するものであり本仕様書によって工業所有権その他権利の実施に対する保障または実施権の許諾を行うものではありません The product described in this specifiction is not designed nor mde for being pplied to the equipment or systems used under life-thretening situtions. When you consider pplying the product of this specifiction to prticulr used, such s vehicle-mounted units, shipbord equipment, erospce equipment, medicl devices, tomic control systems nd submrine relying equipment or systems, plese pply fter confirmtion of this product to be stisfied bout system construction nd required relibility. 本仕様書に記載された製品は人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計製造されたものではありません本仕様書の製品を車両機器船舶航空宇宙医療機器原子力制御海底中継機器あるいはシステムなど特殊用途へのご利用をご検討の際はシステム構成及び要求品質に満足することをご確認の上ご利用下さい If there is ny uncler mtter in this specifiction, plese contct 15 / 15

R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied dte Drwn Checked Checked Approved Jn Enctment Issued dte T.Miysk K.Ymd Y.Seki

SPECIFICATION Device Nme : Type Nme : Spec. No. : IGBT MODULE 6MBI5U4A-12 MS5F 615 Jn. 18 5 Jn. 18 5 S.Miyshit T.Miysk K.Ymd Y.Seki 1 H4-4-7b R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied