110822_MS5F7568b_2MBI1400VXB-120P-50

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1 SPECIFICATION This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of (14A/12VIGBT Module) Device Nme : IGBT Module (RoHS complint product) Type Nme : 2MBI14VXB12P5 Spec. No. : MS5F7568 DRAWN CHECKED CHECKED DATE 25Jun1 25Jun1 14Jul1 NAME APPROVAL S.Yoshiwtri H.kkiki O.Ikw K.Ohshik MS5F / 17

2 Revised Records Dte Clssifiction Ind. Content Applied dte Drwn Checked Checked Approved 25Jun. '1 enctment Issued dte S.Yoshiw tri H.Kkiki K.Ohshik O.Ikw This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of 28Jun '11 22Aug '11 revised revised Revised outline drwing, Qg curve, Rth(jc) curve Added Internl Rg, weight, FWDSOA Revised outline drwing(p3), Rg(p5,13,14) 28Jun'11 22Aug'11 H.Ichikw S.Miyshit K.Ohshik H.Ichikw S.Miyshit K.Ohshik O.Ikw O.Ikw MS5F / 17

3 Type Nme: 2MBI14VXB12P5 (RoHS complint products) * V series soft switching chip set. 1. Outline Drwing ( Unit : mm )() This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of LABEL2 Weight:125g(typ.)() LABEL1 LABEL2 (Fuji internl control codes) * This lel my e eliminted without notifiction. 2. Equivlent Circuit [ Inverter ] [ Thermistor ] Min C1 Sense C1 TH1 G1 TH2 Min C2E1 Sense C2E1 G2 Sense E2 Min E2 MS5F / 17

4 This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of 3. Mximum Rtings (t Tc= 25 C unless otherwise specified) Items Symols Conditions Mximum Rtings Units CollectorEmitter voltge Vces 12 V GteEmitter voltge Vges ±2 V Ic Continuous Tc= 25 C 18 Tc=1 C 14 Collector current Ic pulse 1ms 28 A Ic 14 Ic pulse 1ms 28 Collector power dissiption Pc 1 device 765 W Junction temperture Tj 175 Operting junction temperture Tjop 15 (under switching conditions) C Cse temperture Tc 15 Storge temperture Tstg 4 ~ +15 Inverter Isoltion voltge Screw Torque *3 etween terminl nd copper se (*1) etween thermistor nd others (*2) Mounting Min Terminls Sense Terminls M5 6. M8 1. N m M4 2.1 (*1) All terminls should e connected together during the test. (*2) Two thermistor terminls should e connected together, other terminls should e connected together nd shorted to se plte during the test. (*3) Recommendle Vlue : Mounting 3. ~ 6. Nm (M5) Recommendle Vlue : Min Terminls 8. ~ 1. Nm (M8) Recommendle Vlue : Sense Terminls 1.8 ~ 2.1 Nm (M4) Viso AC: 1min. 4 VAC MS5F / 17

5 4. Electricl chrcteristics (t Tj= 25 C unless otherwise specified) NOTICE: The externl gte resistnce (Rg) shown elow is one of our recommended vlue for the purpose of minimum switching loss. However the optimum Rg depends on circuit configurtion nd/or environment. We recommend tht the Rg hs to e crefully chosen sed on considertion if IGBT module mtches design criteri, for exmple, switching loss, EMC/EMI, spike voltge, surge current nd no unexpected oscilltion nd so on. This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Inverter Thermistor GteEmitter lekge current GteEmitter threshold voltge CollectorEmitter sturtion voltge Internl gte resistnce Input cpcitnce Resistnce B vlue Items Symols Conditions Zero gte voltge Collector current Turnon time Turnoff time Forwrd on voltge Reverse recovery time Ices Iges Vge(th) Vge=V, Vce=12V Vce=V, Vge=±2V Vce=2V, Ic=14mA Vce(st) Tj=25 C (terminl) Tj=125 C 2.1 *1 Tj=15 C 2.15 Vge=15V, Ic=14A V Tj=25 C Vce(st) Tj=125 C 2. (chip) Tj=15 C 2.5 Rg(int).79 Ω () Cies Vce=1V, Vge=V, ƒ=1mhz 128 nf ton 1 tr 4 Vcc=6V, Ic=14A, Vge=±15V, tr(i) 15 Rg=1Ω,Ls=6nH toff 12 nsec () tf 15 Vf Tj=25 C (terminl) Tj=125 C 2.5 *1 Tj=15 C 2. Vge=V, If=14A V Tj=25 C Vf Tj=125 C 1.95 (chip) Tj=15 C 1.9 trr If=14A 2 nsec R T=25 C 5 T=1 C Ω B T=25/5 C K *1 Plese refer to section 14, there is definition of onstte voltge t terminl. Chrcteristics min. typ. mx Units ma na 7. V MS5F / 17

6 5. Therml resistnce chrcteristics Chrcteristics Items Symols Conditions min. typ. mx. Inverter IGBT.195 Therml resistnce(1device) Rth(jc) Inverter FWD.36 Contct therml resistnce Rth(cf) with Therml Compound.42 (1device) (*1) (*1) This is the vlue which is defined mounting on the dditionl cooling fin with therml compound. Units C/W 6. Recommend wy of module mounting to Het sink Clmping This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of (1) Initil : 1/3 specified torque, sequence (2) Finl : Full specified torque,sequence Het sink Module Mounting holes 7. Indiction on module ( モジュール表示 ) Disply on the module lel Logo of production Type nme : 2MBI14VXB12P5 IC, VCES rting 14A 12V Lot No. (5 digits) Plce of mnufcturing (code) Br code 8. Applicle Ctegory This specifiction is pplied to IGBT Module nmed 2MBI14VXB12P5. 本納入仕様書はIGBTモジュール 2MBI14VXB12P5に適用する MS5F / 17

7 9. Storge nd trnsporttion notes ( 保管運搬上の注意事項 ) The module should e stored t stndrd temperture of 5 to 35 C nd humidity of 45 to 75%. Be creful to solderility of the terminls if the module hs pssed over one yer from mnufcturing dte, under the ove storge condition. 常温常湿保存が望ましい (5~35 C, 45~75%) 本保存条件下で製造から1 年以上経過した場合は端子半田付け性に十分注意すること Store modules in plce with few temperture chnges in order to void condenstion on the module surfce. 急激な温度変化のなきこと ( モジュール表面が結露しないこと ) Avoid exposure to corrosive gses nd dust. 腐食性ガスの発生場所塵埃の多い場所は避けること This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Avoid excessive externl force on the module. 製品に荷重がかからないように十分注意すること Store modules with unprocessed terminls. モジュールの端子は未加工の状態で保管すること Do not drop or otherwise shock the modules when trnsporting. 製品の運搬時に衝撃を与えたり落下させたりしないこと 1. Definitions of switching time ( スイッチング時間の定義 ) RG VGE 11. Pcking nd leling ( 梱包仕様 ) Disply on the pcking ox Logo of production Type nme Lot No Products quntity in pcking ox VCE Ic L Vcc V V A VGE VCE Ic 1% 9% tr to n tr r tr(i) I rr ~ ~ 9% V Ic 9% 1% VCE 1% ~ tf toff 12. RoHS directive complince (RoHS 指令適用について ) The document (MS5F629) out RoHS tht Fuji Electric issued is pplied to this IGBT Module. The Jpnese Edition(MS5F6212) is mde into reference grde. 本 IGBTモジュールは富士電機が発行しているRoHSに関する資料 MS5F629を適用する日本語版 (MS5F6212) は参考資料とする MS5F / 17

8 13. List of mterils ( 材料リスト ) 2 1 This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of No. Prts Mteril (min) Ref. 1 Bse Plte Cu Ni plting 2 Terminl Cu Ni plting 3 FWD chip Silicon (Not drwn in ove) 4 IGBT chip Silicon (Not drwn in ove) 5 Wiring Aluminum (Not drwn in ove) Solder 6 (Under chip) (Under Isoltion sustrte) Sn/Ag se Sn/S se 7 Screw Fe 8 Nut Fe 9 Lel PET (Not drwn in ove) 1 Cse PPS resin UL 94V 11 Silicone gel Silicone resin 12 Adhesive Silicone resin 13 Isoltion sustrte Al2O3 + Cu (Not drwn in ove) 14 Resistnce Chip Silicon (Not drwn in ove) 15 Thermistor Led glss (Not drwn in ove) 14. Definition of onstte voltge t terminl nd switching chrcteristics ( オン電圧端子値とスイッチング特性についての定義 ) Min C2E1 Min C1 Sense C1 VCE (terminl) G1 of Upper rm Sense C2E1 Fuji defined VCE vlue of terminl y using Sense C1 nd Sense C2E1 for Upper rm nd Sense C2E1 nd Sense E2 for Lower rm. Switching chrcteristics of VCE lso is defined etween Sense C1 nd Sense C2E1 for Upper rm nd Sense C2E1 nd Sense E2 for Lower rm. G2 Plese use these terminls whenever VCE (terminl) mesure spike voltge nd onstte voltge. of Lower rm Min E2 Sense E2 MS5F / 17

9 15. Reliility test results This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Mechnicl Tests Environment Tests 1 Test items Terminl Strength (Pull test) 2 Mounting Strength 3 Virtion 4 Shock Reliility Test Items Test methods nd conditions Pull force : 2N (Control terminl) 4N (Min terminl) Test time : 1±1 sec. Screw torque : 1.8 ~ 2.1 Nm (M4) 3. ~ 6. N m (M5) 8. ~ 1. Nm(M8) Test time : 1±1 sec. Rnge of frequency : 1 ~ 5Hz Sweeping time : 15 min. Accelertion : 1m/s 2 Sweeping direction : Ech X,Y,Z xis Test time : 6 hr. (2hr./direction) Mximum ccelert : 5m/s 2 Pulse width : 1.msec. Condition code B Direction : Ech X,Y,Z xis Test time : 3 times/direction 1 High Temperture Storge temp. : 125 ± 5 C Test Method 21 5 ( : 1 ) Storge Test durtion : 1hr. 2 Low Temperture Storge temp. : 4 ± 5 C Test Method 22 5 ( : 1 ) Storge Test durtion : 1hr. 3 Temperture Storge temp. : 85 ± 2 C Test Method 13 5 ( : 1 ) Humidity Reltive humidity : 85 ± 5% Test code C Storge Test durtion : 1hr. 4 Unsturted Test temp. : 12 ± 2 C Test Method 13 5 ( : 1 ) Pressurized Test humidity : 85 ± 5% Test code E 5 Vpor Temperture Test durtion : 96hr. Low temp. 4 ± 5 C Test Method 15 5 ( : 1 ) Cycle Test temp. : High temp. 125 ± 5 C RT 5 ~ 35 C Dwell time : High ~ RT ~ Low ~ RT 1hr..5hr. 1hr..5hr. Numer of cycles : 1 cycles 6 Therml Shock Test temp. : High temp C Test Method 37 5 ( : 1 ) Used liquid : Wter with ice nd oiling wter Dipping time : 5 min. pr ech temp. Trnsfer time : 1 sec. Numer of cycles : 1 cycles Reference norms EIAJ ED471 (Aug.21 edition) Numer of smple Test Method 41 5 ( : 1 ) method Ⅰ Test Method 42 method Ⅱ Test Method 43 Reference 1 Condition code B Test Method 44 method Ⅰ Condition code B Test ctegories Acceptnce numer ( : 1 ) ( : 1 ) ( : 1 ) MS5F / 17

10 Reliility Test Items Test items Test methods nd conditions Reference norms EIAJ ED471 (Aug.21 edition) Numer of smple Test ctegories Acceptnce numer This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Endurnce Tests 1 High temperture Test Method 11 5 ( : 1 ) Reverse Bis Test temp. : Tj = 15 ( /+5 ) (for Collector Emitter) Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to CE VGE = V Test durtion : 1hr. 2 High temperture Test Method 11 5 ( : 1 ) Bis (for gte) Test temp. : Tj = 15 ( /+5 ) Bis Voltge : VC = VGE = +2V or 2V Bis Method : Applied DC voltge to GE VCE = V Test durtion : 1hr. 3 Temperture Test Method 12 5 ( : 1 ) Humidity Bis Test temp. : 85±2 o C Condition code C Reltive humidit : 85±5% Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to CE VGE = V Test durtion : 1hr. 4 Intermitted ON time : 2 sec. Test Method 16 5 ( : 1 ) Operting Life OFF time : 18 sec. (Power cycle) Test temp. : 1±5 deg ( for IGBT ) Tj 15, T=25±5 No. of cycles : 15 cycles Filure Criteri Filure criteri Unit Item Chrcteristic Symol Lower limit Upper limit Electricl Lekge current ICES USL 2 ma chrcteristic ±IGES USL 2 μa Gte threshold voltge Sturtion voltge Forwrd voltge VGE(th) VCE(st) VF LSL.8 USL 1.2 USL 1.2 USL 1.2 V V V Therml IGBT Δ VGE mv USL 1.2 resistnce or Δ VCE FWD Δ VF USL 1.2 mv Isoltion voltge Viso Broken insultion Visul Visul inspection inspection Peeling Plting nd the others The visul smple Note : Note LSL : Lower specified limit. USL : Upper specified limit. Ech prmeter mesurement redouts shll e mde fter stilizing the components t room mient for 2 hours minimum, 24 hours mximum fter removl from the tests. And in cse of the wetting tests, for exmple, moisture resistnce tests, ech component shll e mde wipe or dry completely efore the mesurement. MS5F / 17

11 Reliility Test Results This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Test ctegories Mechnicl Tests Environment Tests Endurnce Tests 1 Terminl Strength Test Method 41 5 (Pull test) MethodⅠ 2 Mounting Strength Test Method 42 5 methodⅡ 3 Virtion Test Method 43 5 Condition code B 4 Shock Test Method 44 5 Condition code B 1 High Temperture Storge Test Method Temperture Humidity Test Method 13 5 Storge Test items 4 Unsturted Test Method 13 5 Pressurized Vpor Reference norms EIAJ ED471 (Aug.21 edition) 2 Low Temperture Storge Test Method 22 Test code C Test code E 5 Temperture Cycle Test Method Therml Shock Test Method 37 5 method Ⅰ Condition code A 1 High temperture Reverse Bis Test Method 11 Numer of test smple Numer of filure smple High temperture Bis Test Method 11 5 ( for gte ) 3 Temperture Humidity Bis Test Method 12 5 Condition code C 4 Intermitted Operting Life Test Method 16 5 (Power cycling) ( for IGBT ) MS5F / 17

12 Collector current vs. CollectorEmitter voltge (typ.) Tj= 25 C / chip Collector current vs. CollectorEmitter voltge (typ.) Tj= 15 C / chip 3 25 Vge=2V 15V 3 25 Vge= 2V 15V This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Collector current: Ic [A] Collector Current: Ic [A] Collector current vs. CollectorEmitter voltge (typ.) Vge= 15V / chip CollectorEmitter voltge: Vce [V] Tj=25 C 12V 125 C 15 C 1V Gte Cpcitnce vs. CollectorEmitter Voltge (typ.) Vge= V, ƒ= 1MHz, Tj= 25 C 8V CollectorEmitter Voltge: Vce [V] Collector current: Ic [A] CollectorEmitter voltge: Vce [V] 12V CollectorEmitter voltge vs. GteEmitter voltge (typ.) Tj= 25 C / chip CollectorEmitter Voltge: Vce [V] Dynmic Gte Chrge (typ.)() Vcc=6V, Ic=14A, Tj= 25 C 1V GteEmitter Voltge: Vge [V] 8V Ic=28A Ic=14A Ic=7A Gte Cpcitnce: Cies, Coes, Cres [nf] *** Cies Coes Cres CollectorEmitter voltge: Vce [V] GteEmitter voltge: Vge [V] Vce Vge Gte chrge: Qg [nc] CollectorEmitter voltge: Vce [V] MS5F / 17

13 This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] Switching time vs. Collector current (typ.) Vcc=6V, Vge=±15V, Rg=1Ω, Tj=25 C () 1 toff ton Collector current: Ic [A] Switching time vs. Gte resistnce (typ.) Vcc=6V, Ic=14A, Vge=±15V, Tj=125 C, 15 C toff ton Tj=125 o C Tj=15 o C Gte resistnce: Rg [Ω] Switching loss vs. Gte resistnce (typ.) Vcc=6V, Ic=14A, Vge=±15V, Tj=125 C, 15 C tr tf tr tf Switching time: ton, tr, toff, tf [nsec] Switching loss: Eon, Eoff, Err [mj/pulse] Switching time vs. Collector current (typ.) Vcc=6V, Vge=±15V, Rg=1Ω, Tj=125 C, 15 C () toff ton Tj=125 o C Tj=15 o C Collector current: Ic [A] Switching loss vs. Collector current (typ.) Vcc=6V, Vge=±15V, Rg=1Ω, Tj=125 C, 15 C () Tj=125 o C Tj=15 o C Eoff 1 Err Collector current: Ic [A] Eon Reverse is sfe operting re (mx.) +Vge=15V, Vge=15V, Rg=1Ω, Tj=15 C () tr tf Switching loss: Eon, Eoff, Err [mj/pulse] Tj=125 o C Tj=15 o C Eoff Eon Err 1 1 Collector current: Ic [A] Notice) Plese refer to section 14. There is definision of VCE Gte resistnce: Rg [Ω] CollectorEmitter voltge: Vce [V] MS5F / 17

14 3 Forwrd Current vs. Forwrd Voltge (typ.) chip Reverse Recovery Chrcteristics (typ.) Vcc=6V, Vge=±15V, Rg=1Ω, Tj=25 C () 1 Forwrd current: If [A] C Tj=25 C 125 C Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1 1 Irr trr This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Forwrd on voltge: Vf [V] Reverse Recovery Chrcteristics (typ.) Vcc=6V, Vge=±15V, Rg=1Ω, Tj=125 C, 15 C () Tj=125 o C Tj=15 o C Forwrd current: If [A] Irr trr [THERMISTOR] Temperture chrcteristic (typ.) Therml resistnse: Rth(jc) [ C/W] *** Forwrd current: If [A] Trnsient Therml Resistnce (mx.)() Pulse Width : Pw [sec] FWD sfe operting re (mx.)() Tj=15 C FWD IGBT T sec Rth IGBT C/W FWD Resistnce : R [kω] 1 1 Reverse recovery current: Irr [A] Notice) Plese refer to section 14. There is definision of VCE. Pmx=14kW Temperture [ C] CollectorEmitter voltge: VCE [V] MS5F / 17

15 Wrnings This product shll e used within its mximum rting (voltge, current, nd temperture). This product my e roken in cse of using eyond the mximum rtings. 製品の最大定格 ( 電圧, 電流, 温度等 ) の範囲内で御使用下さい最大定格を超えて使用すると素子が破壊する場合があります Connect dequte fuse or protector of circuit etween threephse line nd this product to prevent the equipment from cusing secondry destruction, such s fire, its spreding, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて火災, 爆発, 延焼等の2 次破壊を防いでください This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of Use this product fter relizing enough working on environment nd considering of product's reliility life. This product my e roken efore trget life of the system in cse of using eyond the product's reliility life. 製品の使用環境を十分に把握し製品の信頼性寿命が満足できるか検討の上本製品を適用して下さい製品の信頼性寿命を超えて使用した場合装置の目標寿命より前に素子が破壊する場合があります If the product hd een used in the environment with cid, orgnic mtter, nd corrosive gs ( hydrogen sulfide, sulfurous cid gs), the product's performnce nd ppernce cn not e ensured esily. 酸有機物腐食性ガス ( 硫化水素, 亜硫酸ガス等 ) を含む環境下で使用された場合製品機能外観等の保証はできません Use this product within the power cycle curve (Technicl Rep.No. : MT5F12959). Power cycle cpility is clssified to delttj mode which is stted s ove nd delttc mode. DeltTc mode is due to rise nd down of cse temperture (Tc), nd depends on cooling design of equipment which use this product. In ppliction which hs such frequent rise nd down of Tc, well considertion of product life time is necessry. 本製品はパワーサイクル寿命カーブ以下で使用下さい ( 技術資料 No.: MT5F12959) パワーサイクル耐量にはこの ΔTj による場合の他に ΔTc による場合がありますこれはケース温度 (Tc) の上昇下降による熱ストレスであり本製品をご使用する際の放熱設計に依存しますケース温度の上昇下降が頻繁に起こる場合は製品寿命に十分留意してご使用下さい Never dd mechnicl stress to deform the min or control terminl. The deformed terminl my cuse poor contct prolem. 主端子及び制御端子に応力を与えて変形させないで下さい端子の変形により接触不良などを引き起こす場合があります Use this product with keeping the cooling fin's fltness nd surfce roughness in mounting re with in fltness 5um nd surfce roughness 1um. Also keep the tightening torque within the limits of this specifiction. Too lrge convex of cooling fin my cuse isoltion rekdown nd this my led to criticl ccident. On the other hnd, too lrge concve of cooling fin mkes gp etween this product nd the fin igger, then, therml conductivity will e worse nd over het destruction my occur. 冷却フィンは製品の取り付け範囲で平坦度を5um 以下表面の粗さは1um 以下にして下さい過大な凸反りがあったりすると本製品が絶縁破壊を起こし重大事故に発展する場合がありますまた過大な凹反りやゆがみ等があると本製品と冷却フィンの間に空隙が生じて放熱が悪くなり熱破壊に繋がることがあります MS5F / 17

16 Wrnings In cse of mounting this product on cooling fin, use therml compound to secure therml conductivity. If the therml compound mount ws not enough or its pplying method ws not suitle, its spreding will not e enough, then, therml conductivity will e worse nd therml run wy destruction my occur. Confirm spreding stte of the therml compound when its pplying to this product. (Spreding stte of the therml compound cn e confirmed y removing this product fter mounting.) 素子を冷却フィンに取り付ける際には熱伝導を確保するためのコンパウンド等をご使用ください又塗布量が不足したり塗布方法が不適だったりするとコンパウンドが十分に素子全体に広がらず放熱悪化による熱破壊に繋がる事がありますコンパウンドを塗布する際には製品全面にコンパウンドが広がっている事を確認してください ( 実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます ) This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of It shll e confirmed tht IGBT's operting locus of the turnoff voltge nd current re within the RBSOA specifiction. This product my e roken if the locus is out of the RBSOA. ターンオフ電圧電流の動作軌跡がRBSOA 仕様内にあることを確認して下さい RBSOAの範囲を超えて使用すると素子が破壊する可能性があります If excessive sttic electricity is pplied to the control terminls, the devices my e roken. Implement some countermesures ginst sttic electricity. 制御端子に過大な静電気が印加された場合素子が破壊する場合があります取り扱い時は静電気対策を実施して下さい Never dd the excessive mechnicl stress to the min or control terminls when the product is pplied to equipments. The module structure my e roken. 素子を装置に実装する際に主端子や制御端子に過大な応力を与えないで下さい端子構造が破壊する可能性があります In cse of insufficient VGE, erroneous turnon of IGBT my occur. VGE shll e set enough vlue to prevent this mlfunction. (Recommended vlue : VGE = 15V) 逆バイアスゲート電圧 VGEが不足しますと誤点弧を起こす可能性があります誤点弧を起こさない為にVGEは十分な値で設定して下さい ( 推奨値 : VGE = 15V ) In cse of higher turnon dv/dt of IGBT, erroneous turnon of opposite rm IGBT my occur. Use this product in the most suitle drive conditions, such s +VGE, VGE, RG, CGE to prevent the mlfunction. ターンオン dv/dt が高いと対向アームのIGBTが誤点弧を起こす可能性があります誤点弧を起こさない為の最適なドライブ条件 (+VGE, VGE, RG, CGE) でご使用下さい This product my e roken y vlnche in cse of VCE eyond mximum rting VCES is pplied etween CE terminls. Use this product within its mximum voltge. VCESを超えた電圧が印加された場合アバランシェを起こして素子破壊する場合があります VCEは必ず最大定格の範囲内でご使用下さい MS5F / 17

17 Cutions Fuji Electric is constntly mking every endevor to improve the product qulity nd reliility. However, semiconductor products my rrely hppen to fil or mlfunction. To prevent ccidents cusing injury or deth, dmge to property like y fire, nd other socil dmge resulted from filure or mlfunction of the Fuji Electric semiconductor products, tke some mesures to keep sfety such s redundnt design, spredfirepreventive design, nd mlfunctionprotective design. 富士電機は絶えず製品の品質と信頼性の向上に努めていますしかし半導体製品は故障が発生したり誤動作する場合があります富士電機製半導体製品の故障または誤動作が結果として人身事故火災等による財産に対する損害や社会的な損害を起こさないように冗長設計延焼防止設計誤動作防止設計など安全確保のための手段を講じて下さい This mteril nd the informtion herein is the property of They shll e neither reproduced, copied, lent, or disclosed in ny wy whtsoever for the use of ny third prty nor used for the mnufcturing purposes without the express written consent of The ppliction exmples descried in this specifiction only explin typicl ones tht used the Fuji Electric products. This specifiction never ensure to enforce the industril property nd other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は富士電機製品を使用した代表的な応用例を説明するものであり本仕様書によって工業所有権その他権利の実施に対する保障または実施権の許諾を行うものではありません The product descried in this specifiction is not designed nor mde for eing pplied to the equipment or systems used under lifethretening situtions. When you consider pplying the product of this specifiction to prticulr used, such s vehiclemounted units, shipord equipment, erospce equipment, medicl devices, tomic control systems nd sumrine relying equipment or systems, plese pply fter confirmtion of this product to e stisfied out system construction nd required reliility. 本仕様書に記載された製品は人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計製造されたものではありません本仕様書の製品を車両機器船舶航空宇宙医療機器原子力制御海底中継機器あるいはシステムなど特殊用途へのご利用をご検討の際はシステム構成及び要求品質に満足することをご確認の上ご利用下さい If there is ny uncler mtter in this specifiction, plese contct MS5F / 17

R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied dte Drwn Checked Checked Approved Jn Enctment Issued dte T.Miysk K.Ymd Y.Seki

SPECIFICATION Device Nme : Type Nme : Spec. No. : IGBT MODULE 6MBI5U4A-12 MS5F 615 Jn. 18 5 Jn. 18 5 S.Miyshit T.Miysk K.Ymd Y.Seki 1 H4-4-7b R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied