6mbp75rtb060.p65

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1 SPECIFICATION Device Nme : Type Nme : Spec. No. : IGBT - IPM 6MBP75RTB060 Fuji Electric Co.,Ltd. Mtsumoto Fctory Jun. 12 '02 Jun. 12 '02 Jun.-12 -'02 K.Sekigw Nishiur K.Ymd T.Fujihir 1 H

2 R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied dte Drwn Checked Approved Jun.-12-'02 enctment Issued dte K.Sekigw Nishiur K.Ymd T.Fujihir Jul.-08-'02 Correction Addition correction : Ioc.(8/) Wrrning(21/) ddition : trr Irr vs IF (18/) Jul.-08-'02 K.Sekigw Nishiur K.Ymd T.Fujihir Apr.-09-'03 Revision Reliility Test Items. Apr.-09-'03 N.Mtsud T.Miysk K.Ymd T.Fujihir 2 H

3 6MBP75RTB Outline Drwing ( Unit : mm ) Pckge type : P ± ±1 95 ± ± ± ± ± ± ± ± ± ±0.1 4-φ 5.5 ±1 88 ± ± B P N W V U M φ Lot No. Indiction of Lot No. Odered No. in monthly Mnufctured month (Jn.~Sep.:1~9,Oct.:O,Nov.:N,Dec.:D) Lst digit of mnufctured yer 3. ± ± ±0.1 φ mx ( φ 1 ~ 1.5) (1~ 2) ±0.3 Detils of control terminls Dimensions in mm 3

4 2.Pin Descriptions Min circuit Symol P U V W N B Description Positive input supply voltge. Output (U). Output (V). Output (W). Negtive input supply voltge. No contct. Control circuit Symol Description 1 GNDU High side ground (U). 2 VinU Logic input for IGBT gte drive (U). 3 VccU High side supply voltge (U). 4 GNDV High side ground (V). 5 VinV Logic input for IGBT gte drive (V). 6 VccV High side supply voltge (V). 7 GNDW High side ground (W). 8 VinW Logic input for IGBT gte drive (W). 9 VccW High side supply voltge (W). 10 GND Low side ground. 11 Vcc Low side supply voltge. 12 VinDB No contct. 13 VinX Logic input for IGBT gte drive (X). 14 VinY Logic input for IGBT gte drive (Y). 15 VinZ Logic input for IGBT gte drive (Z). 16 ALM Low side lrm signl output. 4

5 3. Block Digrm VccU 3 P VinU 2 Pre- Driver GNDU VccV 1 6 VZ U VinV 5 Pre- Driver GNDV 4 VZ V VccW 9 VinW 8 Pre- Driver GNDW 7 VZ W Vcc 11 VinX 13 Pre- Driver GND 10 VZ VinY 14 Pre- Driver VZ VinZ 15 Pre- Driver VZ NC B 12 NC N ALM 16 RALM 1. 5kΩ Over heting protection circuit Pre-drivers include following functions 1 Amplifier for driver 2 Short circuit protection 3 Under voltge lockout circuit 4 Over current protection 5 IGBT chip over heting protection 5

6 4.Asolute Mximum Rtings Tc=25 unless otherwise specified. Items Symol Min. Mx. Units Bus Voltge DC V DC V (etween terminl P nd N) Surge V DC(surge) V Shortoperting Vsc V Collector-Emitter Voltge *1 Vces V DC Ic - 75 A Inverter Collector Current 1ms Icp A Duty=74.9% *2 -Ic - 75 A Collector Power Dissiption One trnsistor *3 Pc W Supply Voltge of Pre-Driver *4 Vcc V Input Signl Voltge *5 Vin -0.5 Vcc+0.5 V Input Signl Current Iin - 3 ma Alrm Signl Voltge *6 VALM -0.5 Vcc V Alrm Signl Current *7 IALM - 20 ma Junction Temperture Tj Operting Cse Temperture Topr Storge Temperture Tstg Isolting Voltge (Terminl to se, 50/60Hz sine wve 1min.) *8 Screw Torque Terminl (M5) Mounting (M5) Viso AC V Nm Note *1 :Vces shll e pplied to the input voltge etween terminl P nd U or V or W,N nd U or V or W. *2 :125 /FWD Rth(j-c)/(Ic VF MAX)=125/0.855/(75 2.6) 100=74.9% *3 : Pc=125 /IGBT Rth(j-c)=125/0.63=198W *4 : VCC shll e pplied to the input voltge etween terminl No.3 nd 1,6 nd 4, 9 nd 7, 11 nd 10. *5 : Vin shll e pplied to the input voltge etween terminl No.2 nd 1, 5 nd 4, 8 nd 7, 13,14,15 nd 10. *6 : VALM shll e pplied to the voltge etween terminl No.16 nd 10. *7 : IALM shll e pplied to the input current to terminl No.16. *8 : 50Hz/60Hz sine wve 1 minute. 6

7 5. Electricl Chrcteristics Tj=25,Vcc=15V unless otherwise specified. 5.1 Min circuit Item Symol Conditions Min. Typ. Mx. Units Collector Current t off signl input I CES V CE =600V Vin terminl open ma Inverter Collector-Emitter Ic=75A Terminl V V CE(st) sturtion voltge Chip V -Ic=75A Terminl V Forwrd voltge of FWD VF Chip V Turn-on time ton V DC=300V Tj= Turn-off time toff Ic=75A Fig.1,Fig us Reverse recovery time trr V DC=300V IF=75A Fig.1,Fig internl wiring Mximum AvlncheEnergy PAV inductnce=50nh mj (A non-repetition) Min circuit wiring inductnce=54nh 5.2 Control circuit Item Symol Conditions Min. Typ. Mx. Units Supply current of P-side pre-driver (one unit) Iccp Switching Frequency : 0~15kHz ma Supply current Iccn Tc=-20~125 Fig.7 of N-side pre-driver ma Input signl threshold voltge Vin(th) ON OFF V Input Zener Voltge Vz Rin=20kΩ V Tc=-20 Fig Alrm Signl Hold Time talm Tc=25 Fig ms Tc=125 Fig Current Limit Resistor RALM Alrm terminl Ω 7

8 5.3 Protection Section (Vcc=15V) Item Symol Conditions Min. Typ. Mx. Units Over Current Protection Level Ioc Tj= A of Inverter circuit Over Current Protection Dely time tdoc Tj= us SC Protection Dely time tsc Tj=125 Fig us IGBT Chips Over Heting TjOH Surfce Protection Temperture Level of IGBT Chips Over Heting Protection Hysteresis TjH Over Heting Protection TcOH VDC=0V,IC=0A Temperture Level CseTemperture Over Heting Protection Hysteresis TcH Under Voltge Protection Level VUV V Under Voltge Protection Hysteresis VH Therml Chrcteristics (Tc=25 ) Item Symol Min. Typ. Mx. Units Junction to Cse Inverter IGBT Rth(j-c) /W Therml Resistnce *9 FWD Rth(j-c) Cse to Fin Therml Resistnce with Compound Rth(c-f) Noise Immunity (Vdc=300V Vcc=15V Test Circuit Fig 5.) Item Conditions Min. Typ. Mx. Units Common mode Pulse width 1us,polrity ±,10 minuets ± kv rectngulr noise Judge:no over-current, no miss operting Common mode Rise time 1.2us,Fll time 50usIntervl 20s,10 times ± kv lightning surge Judge:no over-current, no miss operting 8. Recommended Operting Conditions Item Symol Min. Typ. Mx. Units DC Bus Voltge VDC V Power Supply Voltge of Pre-Driver Vcc V Screw Torque (M5) Nm 9. Weight Item Symol Min. Typ. Mx. Units Weight Wt g *9:( For 1device,Cse is under the device ) 8

9 Vin Vin(th) trr On 90% 50% Vin(th) Ic 90% 10% ton toff Figure 1. Switching Time Wveform Definitions /Vin on off on off Vge (Inside IPM) Gte On Gte Off Fult (Inside IPM) norml /ALM lrm talm>mx. talm>mx. talm 2ms(typ.) Fult:Over-current,Over-het or Under-voltge Figure 2. Input/Output Timing Digrm Necessry conditions for lrm reset (refer to 1 to 3 in figure2.) 1 This represents the cse when filure-cusing Fult lsts for period more thn talm. The lrm resets when the input Vin is OFF nd the Fult hs disppered. 2 This represents the cse when the ON condition of the input Vin lsts for period more thn talm. The lrm resets when the Vin turns OFF under no Fult conditions. 3 This represents the cse when the Fult disppers nd the Vin turns OFF within talm. The lrm resets fter lsting for period of the specified time talm. /Vin on off on Ic Ioc /ALM 1 <tdoc 2 lrm tdoc Figure 3. Over-current Protection Timing Digrm Period 1: Period 2: When collector current over the OC level flows nd the OFF commnd is input within period less thn the trip dely time tdoc, the current is hrd-interrupted nd no lrm is output. When collector current over the OC level flows for period more thn the trip dely time tdoc, the current is soft-interrupted. If this is detected t the lower rm IGBTs, n lrm is output. 9

10 t SC Ic Ic Ic I ALM I ALM Figure.4 Definition of tsc I ALM VccU P CT DC 15V 20k VinU IPM U SW1 GNDU Vcc V + AC200V DC 15V SW2 20k VinX GND W N 4700p Noise Erth Cooling Fin Figure 5. Noise Test Circuit DC 15V Vcc 20k Vin P IPM L + DC 300V HCPL GND N Ic Figure 6. Switching Chrcteristics Test Circuit Icc A Vcc P DC 15V P.G +8V fsw Vin GND IPM Figure 7. Icc Test Circuit U V W N 10

11 10. Truth tle 10.1 IGBT Control The following tle shows the IGBT ON/OFF sttus with respect to the input signl Vin. The IGBT turn-on when Vin is t Low level under no lrm condition. Input (Vin) Low High Output (IGBT) ON OFF 10.2 Fult Detection (1) When fult is detected t the high side, only the detected rm stops its output. At tht time the IPM dosen t ny lrm. (2) When fult is detected t the low side, ll the lower rms stop their outputs nd the IP outputs n lrm of the low side. Fult IGBT Alrm Output U-phse V-phse W-phse Low side ALM High side OC OFF * * * H U-phse UV OFF * * * H TjOH OFF * * * H High side OC * OFF * * H V-phse UV * OFF * * H TjOH * OFF * * H High side OC * * OFF * H W-phse UV * * OFF * H TjOH * * OFF * H OC * * * OFF L Low side UV * * * OFF L TjOH * * * OFF L Cse TcOH * * * OFF L Temperture *:Depend on input logic. 11

12 11. Cutions for design nd ppliction 1. Trce routing lyout should e designed with prticulr ttention to lest stry cpcity etween the primry nd secondry sides of opticl isoltors y minimizing the wiring length etween the opticl isoltors nd the IPM input terminls s possile. フォトカプラとIPMの入力端子間の配線は極力短くしフォトカプラの一次側と二次側の浮遊容量を小さくしたパターンレイアウトにして下さい 2. Mount cpcitor etween Vcc nd GND of ech high-speed opticl isoltor s close to s possile. 高速フォトカプラの Vcc-GND 間にコンデンサを出来るだけ近接して取り付けて下さい 3. For the high-speed opticl isoltor, use high-cmr type one with tphl, tplh 0.8µs. 高速フォトカプラは tphl,tplh 0.8us 高 CMR タイプをご使用ください 4. For the lrm output circuit, use low-speed type opticl isoltors with CTR 100%. アラーム出力回路は低速フォトカプラ CTR 100% のタイプをご使用ください 5. For the control power Vcc, use four power supplies isolted ech. And they should e designed to reduce the voltge vritions. 制御電源 Vcc は絶縁された 4 電源を使用してくださいまた電圧変動を抑えた設計として下さい 6. Suppress surge voltges s possile y reducing the inductnce etween the DC us P nd N, nd connecting some cpcitors etween the P nd N terminls. P-N 間の直流母線は出来るだけ低インダクタンス化し P-N 端子間にコンデンサを接続するなどしてサージ電圧を低減して下さい 7. To prevent noise intrusion from the AC lines, connect cpcitor of some 4700pF etween the three-phse lines ech nd the ground. AC ラインからのノイズ侵入を防ぐために 3 相各線 - アース間に 4700pF 程のコンデンサを接続して下さい 8. At the externl circuit, never connect the control terminl 1GNDU to the min terminl U-phse, 4GNDV to V-phse, 7GNDW to W-phse, nd 10GND to N-phse. Otherwise, mlfunctions my e cused. 制御端子 1GNDUと主端子 U 相制御端子 4GNDVと主端子 V 相制御端子 7GNDWと主端子 W 相制御端子 10GNDと主端子 Nを外部回路で接続しないで下さい誤動作の原因になります 9. Tke note tht n opticl isoltor s response to the primry input signl ecomes slow if cpcitor is connected etween the input terminl nd GND. 入力端子 -GND 間にコンデンサを接続するとフォトカプラ一次側入力信号に対する応答時間が長くなりますのでご注意ください 12

13 10. Tking the used isoltor s CTR into ccount, design with sufficient llownce to decide the primry forwrd current of the opticl isoltor. フォトカプラの一次側電流はお使いのフォトカプラの CTR を考慮し十分に余裕をもった設計にして下さい 11. Apply therml compound to the surfces etween the IPM nd its het sink to reduce the therml contct resistnce. 接触熱抵抗を小さくするために IPM とヒートシンクの間にサーマルコンパウンドを塗布して下さい 12. Finish the het sink surfce within roughness of 10µm nd fltness (cmer) etween scre positions of 0 to +100µm. If the fltness is minus, the het rdition ecomes worse due to gp etween the het sink nd the IPM. And, if the fltness is over +100µm, there is d tht the IPM copper se my e deformed nd this my cuse dielectric rekdown. ヒートシンク表面の仕上げは粗さ 10um 以下ネジ位置間での平坦度 ( 反り ) は 0~100um として下さい平坦度がマ +100μm 0 イナスの場合ヒートシンクと IPM の間に隙間ができ放熱が Het sink 悪化しますまた平坦度が +100um 以上の場合 IPM の銅ヘースが変形し絶縁破壊を起こす危険性があります Mounting holes 13. This product is designed on the ssumption tht it pplies to n inverter use. Sufficient exmintion is required when pplying to converter use. Plese contct Fuji Electric Co., if you would like to pplying to converter use. 本製品はインバータ用途への適用を前提に設計されておりますコンバータ用途へ適用される場合は十分な検討が必要ですもしコンバータへ適用される場合は御連絡ください 14. Plese see the Fuji IGBT-IPM R SERIES APPLICATION MANUAL nd Fuji IGBT MODULES N SERIES APPLICATION MANUAL. 富士 IGBT-IPM Rシリーズアプリケーションマニュアル及び IGBTモシュール Nシリーズアプリケーションマニュアルを御参照ください 13

14 12. Exmple of pplied circuit 応用回路例 Vcc IF 20kΩ 0.1uF + 10uF 3 2 IPM P AC200V Vcc Vcc IF IF 20kΩ 0.1uF 20kΩ 0.1uF + 10uF + 10uF U V W M + 7 B 11 Vcc 12 N 10 20kΩ IF 0.1uF + 10uF 13 20kΩ IF 0.1uF + 10uF 14 IF 20kΩ 0.1uF + 10uF 15 5V 1k Pckge nd Mrking 梱包仕様 Plese see the MT6M4140 which is pcking specifiction of P610 & P611 & P621 pckge. P610,611,621 梱包仕様書 MT6M4140を御参照ください 14. Cutions for storge nd trnsporttion 保管運搬上の注意 Store the modules t the norml temperture nd humidity (5 to 35 C, 45 to 75%). 常温常湿 (5~35 45~75%) で保存して下さい Avoid sudden chnge in mient temperture to prevent condenstion on the module surfces. モジュールの表面が結露しないよう急激な温度変化を避けて下さい Avoid plces where corrosive gs genertes or much dust exists. 腐食性ガスの発生場所粉塵の多い場所は避けて下さい Store the module terminls under unprocessed conditions モジュールの端子は未加工の状態で保管すること. Avoid physicl shock or flls during the trnsporttion. 運搬時に衝撃を与えたり落下させないで下さい 15. Scope of ppliction 適用範囲 This specifiction is pplied to the IGBT-IPM (type: 6MBP75RTB060). 本仕様書は IGBT-IPM ( 型式 :6MBP75RTB060) に適用する 16. Bsed sfety stndrds 準拠安全規格 UL

19 18.Reliility Test Items Test ctegories Environment Tests Mechnicl Tests Test items Test methods nd conditions Reference norms EIAJ ED-4701 Acceptnce Numer of smple numer 1 Terminl strength Pull force : 40 N (min terminl) Test Method ( 1 : 0 ) 端子強度 10 N (control terminl) MethodⅠ (Pull test) Test time : 10 ±1 sec. 2 Mounting Strength Screw torque : 2.5 ~ 3.5 N m (M5) Test Method ( 1 : 0 ) 締付け強度 Test time : 10 ±1 sec. methodⅡ 3 Virtion Rnge of frequency : 10~500 Hz Test Method ( 1 : 0 ) 振動 Sweeping time : 15 min. Condition code B Accelertion : 100 m/s 2 Sweeping direction : Ech X,Y,Z xis Test time : 6 hr. (2hr./direction) 4 Shock Mximum ccelertion : 5000 m/s 2 Test Method ( 1 : 0 ) 衝撃 Pulse width 1.0 ms Condition code B Direction : Ech X,Y,Z xis Test time : 3 times/direction 5 Solderitlity Solder temp. : 235 ±5 Test Method ( 1 : 0 ) はんだ付け性 Immersion durtion : 5.0 ±0.5 sec. Condition code A Test time : 1 time Ech terminl should e Immersed in solder within 1~1.5mm from the ody. 6 Resistnce to Solder temp. : 260 ±5 Test Method ( 1 : 0 ) soldering het Immersion time : 10 ±1sec. Condition code A はんだ耐熱性 Test time : 1 time Ech terminl should e Immersed in solder within 1~1.5mm from the ody. 1 High temperture Storge temp. : 125 ±5 Test Method ( 1 : 0 ) storge 高温保存 Test durtion : 1000 hr. 2 Low temperture Storge temp. : -40 ±5 Test Method ( 1 : 0 ) storge 低温保存 Test durtion : 1000 hr. 3 Temperture Storge temp. : 85 ±2 Test Method ( 1 : 0 ) humidity storge Reltive humidity : 85 ±5% Test code C 高温高湿保存 Test durtion : 1000hr. 4 Unsturted Test temp. : 120 ±2 Test Method ( 1 : 0 ) pressure cooker Atmospheric pressure : 1.7x10 5 P Test code E プレッシャークッカー Test humidity : 85 ±5% Test durtion : 96 hr. 5 Temperture Test temp. : Minimum storge temp. -40 ±5 Test Method ( 1 : 0 ) cycle Mximum storge temp. 125 ±5 温度サイクル Norml temp. 5 ~ 35 Dwell time : Tmin ~ TN ~ Tmx ~ TN 1hr. 0.5hr. 1hr. 0.5hr. Numer of cycles : 100 cycles 6 Therml shock +0 Test Method ( 1 : 0 ) 熱衝撃 Test temp. : High temp. side method Ⅰ Fluid used Dipping time Trnsfer time Numer of cycles +5 Condition code A Low temp. side 0-0 : Pure wter (running wter) : 5 min. pr ech temp. : 10 sec. : 10 cycles 19

20 Test items Test methods nd conditions Reference norms EIAJ ED-4701 Test ctegories Acceptnce Numer of smple numer Endurnce Tests Endurnce Tests 1 High temperture Test temp. : T = 125 ±5 Test Method ( 1 : 0 ) reverse is (Tj 150 ) 高温逆ハイアス Bis Voltge : VC = 0.8 VCES Bis Method : Applied DC voltge to C-E Vcc = 15V Test durtion : 1000 hr. 2 Temperture Test temp. : 85 ±2 Test Method ( 1 : 0 ) humidity is Reltive humidity : 85 ±5 % Condition code C 高温高湿ハイアス Bis Voltge : VC = 0.8 VCES Vcc = 15V Bis Method : Applied DC voltge to C-E Test durtion : 1000 hr. 3 Intermitted ON time : 2 sec. Test Method ( 1 : 0 ) operting life OFF time : 18 sec. (Power cycle) Test temp. : Tj=100 ±5deg 断続動作 Tj 150, T=25 ±5 Numer of cycles : cycles 19.Filure Criteri Item Chrcteristic Symol Filure criteri Unit Note Lower limit Upper limit Electricl Lekge current ICES - USL 2 ma chrcteristic Sturtion voltge VCE(st) - USL 1.2 V Forwrd voltge VF - USL 1.2 V Therml IGBT Rth(j-c) - USL 1.2 /W resistnce FWD Rth(j-c) - USL 1.2 /W Over Current Protection Ioc LSL 0.8 USL 1.2 A Alrm signl hold time talm LSL 0.8 USL 1.2 ms Over heting Protection TcOH LSL 0.8 USL 1.2 Isoltion voltge Viso Broken insultion - Visul Visul inspection inspection Peeling - The visul smple - Plting nd the others LSL : Lower specified limit. USL : Upper specified limit. Note : Ech prmeter mesurement red-outs shll e mde fter stilizing the components t room mient for 2 hours minimum, 24 hours mximum fter removl from the tests. And in cse of the wetting tests, for exmple, moisture resistnce tests, ech component shll e mde wipe or dry completely efore the mesurement. 20

21 Wrnings 1. This product shll e used within its solute mximum rting (voltge, current, nd temperture). This product my e roken in cse of using eyond the rtings. 製品の絶対最大定格 ( 電圧, 電流, 温度等 ) の範囲内で御使用下さい絶対最大定格を超えて使用すると素子が破壊する場合があります 2. Connect dequte fuse or protector of circuit etween three-phse line nd this product to prevent the equipment from cusing secondry destruction. 万一の不慮の事故で素子が破壊した場合を考慮し商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて2 次破壊を防いでください 3. When studying the device t norml turn-off ction, mke sure tht working pths of the turn-off voltge nd current re within the RBSOA specifiction. And,when studying the device duty t short-circuit current non-repetitive interruption, mke sure tht the pths re lso within the vlnche proof(pav) specifiction which is clculted from the snuer inductnce, the IPM inner inductnce nd the turn-off current. In cse of use of IGBT-IPM over these specifictions, it might e possile to e roken. 通常のターンオフ動作における素子責務の検討の際にはターンオフ電圧電流の動作軌跡がRBSOA 仕様内にあることを確認して下さいまた非繰返しの短絡電流遮断における素子責務の検討に際してはスナバーインダクタンスと IPM 内部インダクタンス及びターンオフ電流から算出されるアバランシェ耐量 (PAV) 仕様内である事を確認して下さいこれらの仕様を越えて使用すると素子が破壊する場合があります 4. Use this product fter relizing enough working on environment nd considering of product's reliility life. This product my e roken efore trget life of the system in cse of using eyond the product's reliility life. 製品の使用環境を十分に把握し製品の信頼性寿命が満足できるか検討の上本製品を適用して下さい製品の信頼性寿命を超えて使用した場合装置の目標寿命より前に素子が破壊する場合があります 5. If the product hd een used in the environment with cid, orgnic mtter, nd corrosive gs (For exmple : hydrogen sulfide, sulfurous cid gs), the product's performnce nd ppernce cn not e ensured esily. 酸有機物腐食性ガス ( 硫化水素, 亜硫酸ガス等 ) を含む環境下で使用された場合製品機能外観などの保証は致しかねます 6. The therml stress generted from rise nd fll of Tj restricts the product lifetime. You should estimte the ΔTj from power losses nd therml resistnce, nd design the inverter lifetime within the numer of cycles provided from the power cycle curve. (Technicl Rep. No.: MT6M4057) 製品の寿命は接合温度の上昇と下降によって起こる熱ストレスで決まります損失と熱抵抗から Tjを推定しパワーサイクル寿命カーブで決まるサイクル数以下でインバータの寿命を設計して下さい ( 技術資料 :MT6M4057) 7. Never dd mechnicl stress to deform the min or control terminl. The deformed terminl my cuse poor contct prolem. 主端子及び制御端子に応力を与えて変形させないで下さい端子の変形により接触不良などを引き起こす場合があります 21

22 8. According to the outline drwing, select proper length of screw for min terminl. Longer screws my rek the cse. 本製品に使用する主端子用のネジの長さは外形図に従い正しく選定下さいネジが長いとケースが破損する場合があります 9. If excessive sttic electricity is pplied to the control terminls, the devices cn e roken. Implement some countermesures ginst sttic electricity. 制御端子に過大な静電気が印加された場合素子が破壊する場合があります取り扱い時は静電気対策を実施して下さい Cution 1. Fuji Electric is constntly mking every endevor to improve the product qulity nd reliility. However, semiconductor products my rrely hppen to fil or mlfunction. To prevent ccidents cusing injury or deth, dmge to property like y fire, nd other socil dmge resulted from filure or mlfunction of the Fuji Electric semiconductor products, tke some mesures to keep sfety such s redundnt design, spred-fire-preventive design, nd mlfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めていますしかし半導体製品は故障が発生したり誤動作する場合があります富士電機製半導体製品の故障または誤動作が結果として人身事故火災等による財産に対する損害や社会的な損害を起こさないように冗長設計延焼防止設計誤動作防止設計など安全確保のための手段を講じて下さい 2. The ppliction exmples descried in this specifiction only explin typicl ones tht used the Fuji Electric products. This specifiction never ensure to enforce the industril property nd other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は富士電機製品を使用した代表的な応用例を説明するものであり本仕様書によって工業所有権その他権利の実施に対する保障または実施権の許諾を行うものではありません 3. The product descried in this specifiction is not designed nor mde for eing pplied to the equipment or systems used under life-thretening situtions. When you consider pplying the product of this specifiction to prticulr used, such s vehicle-mounted units, shipord equipment, erospce equipment, medicl devices, tomic control systems nd sumrine relying equipment or systems, plese pply fter confirmtion of this product to e stisfied out system construction nd required reliility. 本仕様書に記載された製品は人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計製造されたものではありません本仕様書の製品を車両機器船舶航空宇宙医療機器原子力制御海底中継機器あるいはシステムなど特殊用途へのご利用をご検討の際はシステム構成及び要求品質に満足することをご確認の上ご利用下さい If there is ny uncler mtter in this specifiction, plese contct Fuji Electric Co., Ltd.

6mbp50tea060.p65

6mbp50tea060.p65 SPECIFICATION Device Nme : Type Nme : IGBT - IPM 6MBP50TEA060 Spec. No. : Fuji Electric Co.,Ltd. Mtsumoto Fctory Nov. 26 02 K.Sekigw Nov. 26 02 Nishiur Nov.-26-02 K.Ymd T.Fujihir 1 H04-004-07 R e v i s