R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied dte Drwn Checked Checked Approved Enctment Issued dte Feb M.W tnbe K.Ymd T.Mi

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1 SPECIFICATION Device Nme : IGBT MODULE (RoHS complint product) Type Nme : 2MBI45U4N-12-5 Spec. No. : MS5F 657 Feb. 6 Feb. 6 H.Kned M.Wtnbe K.Ymd T.Miysk 1 H4-4-7b

2 R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied dte Drwn Checked Checked Approved Enctment Issued dte Feb M.W tnbe K.Ymd T.Miysk Sep Revision Revised Outline Drwing (P3/) T.Kog S.Miyshit K.Ymd T.Miysk 2 H4-4-6b

3 2MBI45U4N-12-5 (RoHS complint product) 1. Outline Drwing ( Unit : mm ) N OUT P 2. Equivlent circuit C P (2) T1 [Thermistor] T2 G1 E1 OUT (3,4) G2 E2 N (1) 3 H4-4-3

4 3. Absolute Mximum Rtings ( t Tc= 25 o C unless otherwise specified ) Items Symbols Conditions Mximum Rtings Units Collector-Emitter voltge VCES 12 V Gte-Emitter voltge VGES ±2 V Ic Continuous Tc=25 o C 6 Tc=8 o C 45 Collector current Icp 1ms Tc=25 o C 12 Tc=8 o C 9 A -Ic 45 -Ic pulse 1ms 9 Collector Power Dissiption Pc 1 device 28 W Junction temperture Tj +15 Storge temperture Tstg -4 to +125 o C Isoltion between terminl nd copper bse (*1) voltge between thermistor nd others (*2) Viso AC : 1min. 25 VAC Screw Mounting (*3) Torque Terminls (*4) 4.5 N m (*1) All terminls should be connected together when isoltion test will be done. (*2) Two thermistor terminls should be connected together, ech other terminls should be connected together nd shorted to bse plte when isoltion test will be done. (*3) Recommendble Vlue : 2.5 to 3.5 Nm (M5) (*4) Recommendble Vlue : 3.5 to 4.5 Nm (M6) 4. Electricl chrcteristics ( t Tj= 25 o C unless otherwise specified ) Items Symbols Conditions Chrcteristics min. typ. mx. Units Zero gte voltge VCE=12V ICES collector current VGE=V ma Gte-Emitter VCE=V IGES lekge current VGE=±2V na Gte-Emitter VCE=2V VGE(th) threshold voltge Ic=45mA V VCE(st) Ic=45A Tj=25 o C Collector-Emitter (terminl) VGE=15V Tj=125 o C sturtion voltge VCE(st) Tj=25 o C V (chip) Tj=125 o C Input cpcitnce Cies VCE=1V,VGE=V,f=1MHz nf ton Vcc=6V Turn-on time tr Ic=45A tr(i) VGE=±15V us Turn-off time toff RG=1.1Ω tf VF IF=45A Tj=25 o C Forwrd on voltge (terminl) VGE=V Tj=125 o C VF Tj=25 o C V (chip) Tj=125 o C Reverse recovery time Led resistnce, terminl-chip (*5) trr R led IF=45A us mω Resistnce R T=25 o C T=1 o C Ω B vlue B T=25/5 o C K (*5) Biggest internl terminl resistnce mong rm. Inverter Thermistor 5. Therml resistnce chrcteristics Chrcteristics Items Symbols Conditions Units min. typ. mx. IGBT Therml resistnce(1device) Rth(j-c) FWD Contct Therml resistnce o C/W Rth(c-f) with Therml Compound (1 device) (*6) (*6) This is the vlue which is defined mounting on the dditionl cooling fin with therml compound. 4 H4-4-3

5 6.Recommend wy of module mounting to Het sink Clmping (1) Initil : 1/3 specified torque, sequence (1) (2) (3) (4) (2) Finl :Full specified torque (3.5 Nm),sequence(4) (3) (2) (1) (3) (1) Mounting holes Het sink (2) (4) Module 7. Indiction on module Logo of production 2MBI45U4N A 12V Lot.No. Plce of mnufcturing (code) 8. Applicble ctegory This specifiction is pplied to IGBT-Module nmed 2MBI45U4N Storge nd trnsporttion notes The module should be stored t stndrd temperture of 5 to 35 o C nd humidity of 45 to 75%. Be creful to solderbility of the terminls if the module hs pssed over one yer from mnufcturing dte, under the bove storge condition. Store modules in plce with few temperture chnges in order to void condenstion on the module surfce. Avoid exposure to corrosive gses nd dust. Avoid excessive externl force on the module. Store modules with unprocessed terminls. Do not drop or otherwise shock the modules when trnsporting. 1. Definitions of switching time ~ 9% V V L VGE tr r Vcc VCE 9% I r r ~ Ic 9% RG VGE VCE V A Ic 1% 1% VCE 1% ~ tr ( i ) tf Ic tr to n to f f 11. Pcking nd Lbeling Disply on the pcking box - Logo of production - Type nme - Lot No - Products quntity in pcking box 5 H4-4-3

6 12. List of mteril ( 材料リスト ) (Totl weight of soldering mteril(typ) : 1.5 g) No. Prts Mteril (min) Ref. 1 Bse Plte Cu Ni plting 2 Terminl Cu Ni plting (Internl) Led free solder plting (Externl) 3 Cover PPS resin UL 94V- 4 Cse PPS resin UL 94V- 5 Isoltion substrte Al 2 O 3 + Cu 6 IGBT chip Silicon 7 Wiring Aluminum 8 Silicone Gel Silicone resin 9 Adhesive Silicone resin 1 Solder (Under chip) Sn/Ag bse (Not drwn in bove) 11 Solder (Under Isoltion substrte ) Sn/Ag bse (Not drwn in bove) 12 Lbel Pper (Not drwn in bove) 13 FWD chip Silicon Ring Fe Trivlent Chromte tretment 15 Thermistor Led glss 16 Terminl Cu Ni plting 17 Nut Fe Trivlent Chromte tretment 13. RoHS Directive Complince (RoHS 指令適用について ) 本 IGBT モジュールは富士電機デバイステクノロジーが発行している RoHS に関する資料 MS5F629 を適用する日本語版 (MS5F6212) は参考資料とする The document (MS5F629) bout RoHS tht Fuji Electric Device Technology issued is pplied to this IGBT Module. The Jpnese Edition(MS5F6212) is mde into reference grde. 6 H4-4-3

7 . Relibility test results Relibility Test Items Test items Test methods nd conditions Reference norms EIAJ ED-471 (Aug.-21 edition) Number of smple Test ctegories Acceptnce number Mechnicl Tests Environment Tests 1 Terminl Strength Pull force : 2N (Control terminl) Test Method 41 5 ( : 1 ) (Pull test) 4N (Min terminl) MethodⅠ Test time : 1±1 sec. 2 Mounting Strength Screw torque : 2.5 ~ 3.5 N m (M5) Test Method 42 5 ( : 1 ) 3.5 ~ 4.5 N m (M6) methodⅡ Test time : 1±1 sec. 3 Vibrtion Rnge of frequency : 1 ~ 5Hz Test Method 43 5 ( : 1 ) Sweeping time : 15 min. Reference 1 Accelertion : 1m/s 2 Condition code B Sweeping direction : Ech X,Y,Z xis Test time : 6 hr. (2hr./direction) 4 Shock Mximum ccelertion : 5m/s 2 Test Method 44 5 ( : 1 ) Pulse width : 1.msec. Condition code B Direction : Ech X,Y,Z xis Test time : 3 times/direction 5 Solderbitlity Solder temp. : 245±5 Test Method 33 5 ( : 1 ) Immersion time : 5±.5sec. Test time : 1 time Solder Alloy : Sn-Ag-Cu Ech terminl should be Immersed in solder within 1~1.5mm from the body. 6 Resistnce to Solder temp. : 26±5 Test Method 32 5 ( : 1 ) Soldering Het Immersion time : 1±1sec. Condition code A Test time : 1 time Ech terminl should be Immersed in solder within 1~1.5mm from the body. 1 High Temperture Storge temp. : 125±5 Test Method 21 5 ( : 1 ) Storge Test durtion : 1hr. 2 Low Temperture Storge temp. : -4±5 Test Method 22 5 ( : 1 ) Storge Test durtion : 1hr. 3 Temperture Storge temp. : 85±2 Test Method 13 5 ( : 1 ) Humidity Reltive humidity : 85±5% Test code C Storge Test durtion : 1hr. 4 Unsturted Test temp. : 12±2 Test Method 13 5 ( : 1 ) Pressurized Vpor Test humidity : 85±5% Test code E Test durtion : 96hr. 5 Temperture Test Method 15 5 ( : 1 ) Cycle Test temp. : Low temp. -4±5 High temp. 125 ±5 RT 5 ~ 35 Dwell time : High ~ RT ~ Low ~ RT 1hr..5hr. 1hr..5hr. Number of cycles : 1 cycles 6 Therml Shock + Test Method 37 5 ( : 1 ) Test temp. : High temp. 1-5 method Ⅰ Low temp. - Used liquid : Wter with ice nd boiling wter Dipping time : 5 min. pr ech temp. Trnsfer time : 1 sec. Number of cycles : 1 cycles +5 Condition code A 7 H4-4-3

8 Relibility Test Items Endurnce Tests Endurnce Tests Test items Test methods nd conditions Reference norms EIAJ ED-471 (Aug.-21 edition) Number of smple Test ctegories Acceptnce number 1 High temperture Test Method 11 5 ( : 1 ) Reverse Bis Test temp. : T = 125±5 (for Collector-Emitter) (Tj 15 ) Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to C-E VGE = V Test durtion : 1hr. 2 High temperture Test Method 11 5 ( : 1 ) Bis (for gte) Test temp. : T = 125±5 (Tj 15 ) Bis Voltge : VC = VGE = +2V or -2V Bis Method : Applied DC voltge to G-E VCE = V Test durtion : 1hr. 3 Temperture Test Method 12 5 ( : 1 ) Humidity Bis Test temp. : 85±2 o C Condition code C Reltive humidity : 85±5% Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to C-E VGE = V Test durtion : 1hr. 4 Intermitted ON time : 2 sec. Test Method 16 5 ( : 1 ) Operting Life OFF time : 18 sec. (Power cycle) Test temp. : Tj=1±5 deg ( for IGBT ) Tj 15, T=25±5 Number of cycles : 15 cycles Filure Criteri Item Chrcteristic Symbol Filure criteri Unit Note Lower limit Upper limit Electricl Lekge current ICES - USL 2 ma chrcteristic ±IGES - USL 2 A Gte threshold voltge VGE(th) LSL.8 USL 1.2 ma Sturtion voltge VCE(st) - USL 1.2 V Forwrd voltge VF - USL 1.2 V Therml IGBT VGE - USL 1.2 mv resistnce or VCE FWD VF - USL 1.2 mv Isoltion voltge Viso Broken insultion - Visul Visul inspection inspection Peeling - The visul smple - Plting nd the others LSL : Lower specified limit. USL : Upper specified limit. Note : Ech prmeter mesurement red-outs shll be mde fter stbilizing the components t room mbient for 2 hours minimum, 24 hours mximum fter removl from the tests. And in cse of the wetting tests, for exmple, moisture resistnce tests, ech component shll be mde wipe or dry completely before the mesurement. 8 H4-4-3

9 Relibility Test Results Test ctegories Test items Reference norms EIAJ ED-471 (Aug.-21 edition) Number of test smple Number of filure smple Mechnicl Tests 1 Terminl Strength Test Method 41 5 (Pull test) MethodⅠ 2 Mounting Strength Test Method 42 5 methodⅡ 3 Vibrtion Test Method 43 5 Condition code B 4 Shock Test Method 44 5 Condition code B 5 Solderbitlity Test Method Resistnce to Soldering Het Test Method 32 5 Condition code A 1 High Temperture Storge Test Method Low Temperture Storge Test Method 22 5 Environment Tests 3 Temperture Humidity Test Method 13 5 Storge Test code C 4 Unsturted Test Method 13 5 Pressurized Vpor Test code E 5 Temperture Cycle Test Method Therml Shock Test Method 37 5 method Ⅰ Condition code A 1 High temperture Reverse Bis Test Method 11 5 Endurnce Tests 2 High temperture Bis Test Method 11 5 ( for gte ) 3 Temperture Humidity Bis Test Method 12 5 Condition code C 4 Intermitted Operting Life Test Method 16 5 (Power cycling) ( for IGBT ) 9 H4-4-3

10 12 Collector current vs. Collector-Emitter voltge (typ.) Tj=25 o C / chip 12 Collector current vs. Collector-Emitter voltge (typ.) Tj=125 o C / chip Collector current : Ic [ A ] VGE=2V 15V 12V 1V Collector current : Ic [A ] VGE=2V 15V 12V 1V 2 8V Collector-Emitter voltge : VCE [ V ] 2 8V Collector-Emitter voltge : VCE [ V ] Collector current vs. Collector-Emitter voltge (typ.) VGE=15V / chip Collector-Emitter voltge vs. Gte-Emitter voltge (typ.) Tj=25 o C / chip 12 1 Collector current : Ic [ A ] Tj=25 o C Tj=125 o C Collector-Emitter voltge : VCE [ V ] Ic=9A Ic=45A Ic=225A Collector-Emitter voltge : VCE [ V ] Gte-Emitter voltge : VGE [ V ] Cpcitnce vs. Collector-Emitter voltge (typ.) VGE=V, f=1mhz, Tj=25 o C Dynmic Gte chrge (typ.) Vcc=6V, Ic=45A, Tj=25 o C 1. Cpcitnce : Cies, Coes, Cres [ nf ] Cies Cres Coes Collector-Emitter voltge : VCE [ V ] Collector- Emitter voltge : VCE[ 2V/div ] Gte-Emitter voltge : VGE [ 5V/div ] VGE VCE Gte chrge : Qg [ nc ] 1 H4-4-3

11 1 Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, RG=1.1Ω, Tj=25 o C 1 Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, RG=1.1Ω, Tj=125 o C Switching time : ton, tr, toff, tf [ nsec ] 1 1 ton toff tr tf Switching time : ton, tr, toff, tf [ nsec ] 1 1 tr tf ton toff Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gte resistnce (typ.) Vcc=6V, Ic=45A, VGE=±15V, Tj=25 o C Switching loss vs. Collector current (typ.) Vcc=6V, VGE=±15V, RG=1.1Ω 1 1 Switching time : ton, tr, toff, tf [ nsec ] ton toff Gte resistnce : RG [ Ω ] tf tr Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon(25 o C) Eoff(125 o C) Eoff(25 o C) Err(125 o C) Eon(125 o C) Err(25 o C) Collector current : Ic [ A ] Switching loss vs. Gte resistnce (typ.) Vcc=6V, Ic=45A, VGE=±15V, Tj=125 o C Reverse bis sfe operting re (mx.) +VGE=15V, -VGE <= 15V, RG >= 1.1Ω, Tj <= 125 o C Stry inductnce <= 1nH 1 15 Switching loss : Eon, Eoff, Err [ mj/pulse ] Eoff Eon Err Gte resistnce : RG [ Ω ] Collector current : Ic [ A ] Collector-Emitter voltge : VCE [ V ] 11 H4-4-3

12 12 Forwrd current vs. Forwrd on voltge (typ.) chip 1 Reverse recovery chrcteristics (typ.) Vcc=6V, VGE=±15V, RG=1.1Ω Irr(125 o C) Forwrd current : IF [ A ] Tj=25 o C Tj=125 o C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1 Irr(25 o C) trr(125 o C) trr(25 o C) Forwrd on voltge : VF [ V ] Forwrd current : IF [ A ] [ Thermistor ] Trnsient therml resistnce (mx.) Temperture chrcteristic (typ.) Therml resistnce : Rth(j-c) [ o C/W ].1.1 FWD IGBT Resistnce : R [ kω] Pulse width : Pw [ sec ] Temperture [ o C ] 12 H4-4-3

13 Wrnings - This product shll be used within its bsolute mximum rting (voltge, current, nd temperture). This product my be broken in cse of using beyond the rtings. 製品の絶対最大定格 ( 電圧, 電流, 温度等 ) の範囲内で御使用下さい絶対最大定格を超えて使用すると素子が破壊する場合があります - Connect dequte fuse or protector of circuit between three-phse line nd this product to prevent the equipment from cusing secondry destruction, such s fire, its spreding, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて火災, 爆発, 延焼等の 2 次破壊を防いでください - Use this product fter relizing enough working on environment nd considering of product's relibility life. This product my be broken before trget life of the system in cse of using beyond the product's relibility life. 製品の使用環境を十分に把握し製品の信頼性寿命が満足できるか検討の上本製品を適用して下さい製品の信頼性寿命を超えて使用した場合装置の目標寿命より前に素子が破壊する場合があります - If the product hd been used in the environment with cid, orgnic mtter, nd corrosive gs ( hydrogen sulfide, sulfurous cid gs), the product's performnce nd ppernce cn not be ensured esily. 酸有機物腐食性ガス ( 硫化水素, 亜硫酸ガス等 ) を含む環境下で使用された場合製品機能外観等の保証はできません - Use this product within the power cycle curve (Technicl Rep.No. : MT5F12959). Power cycle cpbility is clssified to delt-tj mode which is stted s bove nd delt-tc mode. Delt-Tc mode is due to rise nd down of cse temperture (Tc), nd depends on cooling design of equipment which use this product. In ppliction which hs such frequent rise nd down of Tc, well considertion of product life time is necessry. 本製品はパワーサイクル寿命カーブ以下で使用下さい ( 技術資料 No.: MT5F12959) パワーサイクル耐量にはこの ΔTj による場合の他に ΔTc による場合がありますこれはケース温度 (Tc) の上昇下降による熱ストレスであり本製品をご使用する際の放熱設計に依存しますケース温度の上昇下降が頻繁に起こる場合は製品寿命に十分留意してご使用下さい - Never dd mechnicl stress to deform the min or control terminl. The deformed terminl my cuse poor contct problem. 主端子及び制御端子に応力を与えて変形させないで下さい端子の変形により接触不良などを引き起こす場合があります - Use this product with keeping the cooling fin's fltness between screw holes within 1um t 1mm nd the roughness within 1um. Also keep the tightening torque within the limits of this specifiction. Too lrge convex of cooling fin my cuse isoltion brekdown nd this my led to criticl ccident. On the other hnd, too lrge concve of cooling fin mkes gp between this product nd the fin bigger, then, therml conductivity will be worse nd over het destruction my occur. 冷却フィンはネジ取り付け位置間で平坦度を 1mm で 1um 以下表面の粗さは 1um 以下にして下さい過大な凸反りがあったりすると本製品が絶縁破壊を起こし重大事故に発展する場合がありますまた過大な凹反りやゆがみ等があると本製品と冷却フィンの間に空隙が生じて放熱が悪くなり熱破壊に繋がることがあります - In cse of mounting this product on cooling fin, use therml compound to secure therml conductivity. If the therml compound mount ws not enough or its pplying method ws not suitble, its spreding will not be enough, then, therml conductivity will be worse nd therml run wy destruction my occur. Confirm spreding stte of the therml compound when its pplying to this product. (Spreding stte of the therml compound cn be confirmed by removing this product fter mounting.) 素子を冷却フィンに取り付ける際には熱伝導を確保するためのコンパウンド等をご使用ください又塗布量が不足したり塗布方法が不適だったりするとコンパウンドが十分に素子全体に広がらず放熱悪化による熱破壊に繋がる事がありますコンパウンドを塗布する際には製品全面にコンパウンドが広がっている事を確認してください ( 実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます ) - It shll be confirmed tht IGBT's operting locus of the turn-off voltge nd current re within the RBSOA specifiction. This product my be broken if the locus is out of the RBSOA. ターンオフ電圧電流の動作軌跡が RBSOA 仕様内にあることを確認して下さい RBSOA の範囲を超えて使用すると素子が破壊する可能性があります - If excessive sttic electricity is pplied to the control terminls, the devices my be broken. Implement some countermesures ginst sttic electricity. 制御端子に過大な静電気が印加された場合素子が破壊する場合があります取り扱い時は静電気対策を実施して下さい 13 H4-4-3

14 Wrnings - Never dd the excessive mechnicl stress to the min or control terminls when the product is pplied to equipments. The module structure my be broken. 素子を装置に実装する際に主端子や制御端子に過大な応力を与えないで下さい端子構造が破壊する可能性があります - In cse of insufficient -VGE, erroneous turn-on of IGBT my occur. -VGE shll be set enough vlue to prevent this mlfunction. (Recommended vlue : -VGE = -15V) 逆バイアスゲート電圧 -VGE が不足しますと誤点弧を起こす可能性があります誤点弧を起こさない為に -VGE は十分な値で設定して下さい ( 推奨値 : -VGE = -15V) - In cse of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite rm IGBT my occur. Use this product in the most suitble drive conditions, such s +VGE, -VGE, RG to prevent the mlfunction. ターンオン dv/dt が高いと対抗アームの IGBT が誤点弧を起こす可能性があります誤点弧を起こさない為の最適なドライブ条件 (+VGE, -VGE, RG 等 ) でご使用下さい - This product my be broken by vlnche in cse of VCE beyond mximum rting VCES is pplied between C-E terminls. Use this product within its bsolute mximum voltge. VCES を超えた電圧が印加された場合アバランシェを起こして素子破壊する場合があります VCE は必ず絶対定格の範囲内でご使用下さい Cutions - Fuji Electric Device Technology is constntly mking every endevor to improve the product qulity nd relibility. However, semiconductor products my rrely hppen to fil or mlfunction. To prevent ccidents cusing injury or deth, dmge to property like by fire, nd other socil dmge resulted from filure or mlfunction of the Fuji Electric Device Technology semiconductor products, tke some mesures to keep sfety such s redundnt design, spred-fire-preventive design, nd mlfunction-protective design. 富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めていますしかし半導体製品は故障が発生したり誤動作する場合があります富士電機デバイステクノロジー製半導体製品の故障または誤動作が結果として人身事故火災等による財産に対する損害や社会的な損害を起こさないように冗長設計延焼防止設計誤動作防止設計など安全確保のための手段を講じて下さい - The ppliction exmples described in this specifiction only explin typicl ones tht used the Fuji Electric Device Technology products. This specifiction never ensure to enforce the industril property nd other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり本仕様書によって工業所有権その他権利の実施に対する保障または実施権の許諾を行うものではありません - The product described in this specifiction is not designed nor mde for being pplied to the equipment or systems used under life-thretening situtions. When you consider pplying the product of this specifiction to prticulr used, such s vehicle-mounted units, shipbord equipment, erospce equipment, medicl devices, tomic control systems nd submrine relying equipment or systems, plese pply fter confirmtion of this product to be stisfied bout system construction nd required relibility. 本仕様書に記載された製品は人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計製造されたものではありません本仕様書の製品を車両機器船舶航空宇宙医療機器原子力制御海底中継機器あるいはシステムなど特殊用途へのご利用をご検討の際はシステム構成及び要求品質に満足することをご確認の上ご利用下さい If there is ny uncler mtter in this specifiction, plese contct Fuji Electric Device Technology Co.,Ltd. H4-4-3

R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied dte Drwn Checked Checked Approved Jn Enctment Issued dte T.Miysk K.Ymd Y.Seki

SPECIFICATION Device Nme : Type Nme : Spec. No. : IGBT MODULE 6MBI5U4A-12 MS5F 615 Jn. 18 5 Jn. 18 5 S.Miyshit T.Miysk K.Ymd Y.Seki 1 H4-4-7b R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied