note2.dvi

Size: px

Start display at page:

Download "note2.dvi"

まさとしやなぎしま
5 years ago
Views:

8 216614 2.4 Joh Bardee, William Shockley, Walter Brattai.

1 Joh Bardee, William Shockley, Walter Brattai Bell William Shockley BrattaiBardee Shockley 1947 (12/16 23)Shockley BrattaiBardee (Trasistor, TrasferResistor ) Shockley 1/23 1 [2] ( Biolar Juctio Trasistor, BJT) 2.4 (ollector, ) (Emitter, E) (Base, B) 8-1

2 ƒrƒœƒnƒ^() J ƒx[ƒx (B) B B B E J B J E E ƒgƒ~ƒbƒ^ (E) E (a) (b) 2.4 (a) (b) B- J ( )B- (J E = ) ( ) 2.5(a) V B J 2.3(b) ( - - ( ) B()-() ( ) ( ) V bi ( ) B- (E-B ) B ( ) E B E() ( ) (miority carrier ijectio) B ( ) (miority carrier diffusio legth) B ( )B (B- ) 2.6(a) ( J ) 8-2

3 J (ma) (a) 2N222a J E = 1mA 2mA 3mA 4mA 5mA V B (V) V B B J J E E J (ma) N222A J B = 2A A A A A.5 1 V E (V) (b) E J E džq B J B V E J 2.5 (a) V B ( ) - (b) - V E V B ( ) 2.6(c) -E B E-B V BE J V BE 2.6(a) B B J B V BE J ( ) J J B J = h FE J B (2.16) 2.6(b) h FE - 8-3

4 N222A V E = 6V J (A) N222A V E = 6V J (ma) J (A) J B (A) (V) V BE J B ( A) (a) (b) V BE džq E (c) B J B J 6V 2.6 (c) (a) - V BE J (b) J BJ ( ) I (Field Effect Trasistor, FET) BJT BJT *1 FET BJT BJT - - (Metal-Oxide-Semicoductor, MOS) FET (Juctio FET, JFET) JFET 2.7 x φ(x) d 2 φ dx 2 = aq(x) (a (ǫǫ ) 1 ) (2.17) 1.1 { q = en A ( w x ), (2.18) q = en D ( x w ) *1 ShockleyBJT FET BJT 8-4

5 φ( ) = V dφ φ( w ) =, dx =, w dφ φ(w ) = V V bi, dx = w (2.19) { (aen A /2)(xw ) 2 ( w x ), φ(x) = V V bi (aen D /2)(x w ) 2 ( x w ) (2.2) x = lim φ = lim φ, x x lim (dφ/dx) = lim (dφ/dx) (2.21) x x w w w = ] 1/2 N D, w = N D N A [ 2ǫ ǫ(v V bi ) w d = w w = e [ 2ǫ ǫ(v V bi ) en A [ 2ǫ ǫ(v V bi ) en D NA N D N A N D ] 1/2 N A (2.22) N D N A ] 1/2. (2.23) N A N D [ ] 1/2 2ǫǫ (V V bi ) w d w. (2.24) en D 1/ 2 ( ) Q = en D w d ( ) dq dv = en 2ǫǫ 1 D en D 2 ǫǫ en D = (V V bi ) 1/2 (2.25) V V bi 2 V V bi V (V) ( V ) N D e( V V) bi w w

6 S ( ) ƒ\[ƒx L w d ( y) G ( ƒq[ƒg) G ( ƒq[ƒg) y D ( ) ƒhƒœƒƒ 2w t 3V 3V G D G D S S ƒ`ƒƒƒlƒ ƒ`ƒƒƒlƒ 2.8 JFET( ) ( ) 1/ 2 = V bi N D V [4] JFET (Source, S) (Drai, D) (Gate, G) (2.23) BJT - LJFET 2w t y w d w d (y) = 2ǫǫ V(y) en D (2.26) V(y)y () V bi V g V ch V(y) = V g V bi V ch (y). y dv/dy W J ch = en D µ dv dy 2(w t w d )W (2.27) J ch L J ch J ch L J ch L = L J ch dy = 2eN D µ W L (w t w d ) dv VL ( dy dy = 2w ten D µ W 1 w ) d dv. (2.28) V w t 8-6

7 w d = w t J ch = V V c V c = en D wt 2/2ǫǫ w d /w t = V/V c J ch J ch = 2N Deµ Ww t L [ V L V 2 3 V c (V(V ) 3/2 V(V L ) 3/2 ) ]. (2.29) (2.29) V L 3/2 ( y ) V L 2.6 II FET FET Schockley ( ) Schottky ( ) ( ) 1. (rigid bad aroximatio) E F (µ) = eφ S eφ M eφ M eφ S 2. E F 3. ( ) eφ M eφ S

8 e S E c E c E c e M e( M S ) E D E F E F E F E F e surf E v w d E D E D (a) (b) (c) 2.9 (a) (b) (c) E c eφ surf N D Q (x = ) x (en D x Q)/ǫǫ x d φ(x d ) = xd (en D x Q)/ǫǫ dx = 1 ǫǫ ( ) end 2 x2 d Qx d w d w d = Q/eN D eφ(w d ) = φ M φ S Q Q = 2ǫǫ N D e(φ M φ S ), w d = (2.3) 2ǫǫ (φ M φ S ) 2ǫǫ V s. (2.31) en D en D ev s φ M φ S - ( ) 2.9(b) (Schottky barrier) V V e(v s V) ev s ( ) ( )] ( )[ ( ) ] e(v J = AT [ex 2 Vs ) evs ex = eat 2 evs ev ex ex 1. (2.32) k B T k B T k B T k B T A (2.32) (2.32) ( ) - GaAs IP 8-8

9 2.6.2 MES-FET III-V GaAs MOS - FET (MEtal-Semicoductor FET, MES-FET) GaAs ` ±ƒ`ƒƒlƒ ƒ\[ƒx ƒq[ƒg ƒhƒœƒƒ ó R w MES-FET ( ) MOS (comlemetary) MOS -Si Ž_» Œ ƒq[ƒg V G ƒ\[ƒx N ƒhƒœƒƒ ` ±ƒ`ƒƒƒlƒ à d É Ž_» Œ à d É V D Ž_» Œ - - (Metal-Oxide-Semicoductor, MOS) Si (SiO 2 ) MOS(omlemetary MOS, MOS) MOS 2.1 MOSFET (Emitter oulled Logic, EL) MOS MOS MOSFET MESFET E F ( iversio layer) [1] S. M. Sze, K. K. Ng, Physics of semicoductor devices, (Wiley-Blackwell, 27). [2] Jo Gerter, The Idea Factory: Bell Labs ad the Great Age of America Iovatio, (Pegui Press, 212). 8-9

10 [3] 3 III (1999). [4], (, 1983). Dee level trasiet sectroscoy (DLTS) DLTS [4] V (2.25) N D N P V [ ] 1/2 2ǫǫ (V V bi ) w d (V) w, (.1) e(n D N P ) ǫǫ e(n D N P (V) = (V V bi ) 1/2 (.2) 2 V (.1) w d (V ) *2 V V < V w(v ) < x w(v ) ms ms s mihourday 2.11(a) V V t = t 1 t 2 = (t 1 ) (t 2 ) (b) 2 w( V) w( V) ( T) T ( V) Dee level 1 Dee level 2 ( V) t 1 t 2 t T (a) (b) 2.11 (a) V V (V) (b) σ σ(t) DLTS *2 8-1

11 [?] V V 8-11

(4.15a) Hurwitz (4.15a) {a j } (s ) {a j } n n Hurwitz a n 1 a n 3 a n 5 a n a n 2 a n 4 a n 1 a n 3 H = a n a n 2. (4.16)..... a Hurwitz H i H i i H

(4.15a) Hurwitz (4.15a) {a j } (s ) {a j } n n Hurwitz a n 1 a n 3 a n 5 a n a n 2 a n 4 a n 1 a n 3 H = a n a n 2. (4.16)..... a Hurwitz H i H i i H 6 ( ) 218 1 28 4.2.6 4.1 u(t) w(t) K w(t) = Ku(t τ) (4.1) τ Ξ(iω) = exp[ α(ω) iβ(ω)] (4.11) (4.1) exp[ α(ω) iβ(ω)] = K exp( iωτ) (4.12) α(ω) = ln(k), β(ω) = ωτ (4.13) dϕ/dω f T 4.3 ( ) OP-amp Nyquist Hurwitz