(a) (b) (c) (d) (e) (f) (g) (f) (a), (b) 1
He Gleiter 1) 5-25 nm 1/2 Hall-Petch 10 nm Hall-Petch 2) 3) 4) 2 mm 5000% 5) 1(e) 20 µm Pd, Zr 1(f) Fe 6) 10 nm 2
8) Al-- 1,500 MPa 9) 2 Fe 73.5 Si 13.5 B 9 Nb 3 Cu 1 TEM 11) 100 5 GPa 0.8-1.0% 12) Cu Nb, Cr, Ag Equal Angular Channel Extrusion (ECAE) 12) 90 1 TEM (b) 6.8 ARB Ag-39.9Cu ARB Cu-Ag 3
Hall-Petch torsion straining 13) Accumulative roll-bonding (ARB) 14) (a) (b) ARB Ag-39.9at.%Cu TEM 15) ARB Ag-Cu Ag Cu Ag Cu 16) P/M Mg Mg 17) Mg Mg Co-Al Co-Si Co 1(g) (TMR) 18) 1(f) X 2 mm 1000 MPa 19) 4
4 Region I Hall-Petch Region II Hall-Petch Region III Cu 5) Hall-Petch 4 (T. G. Nieh 5(a) 5(b) 1/D l ex =(A/<K>) 1/2 A <K> D 6 5
5 (a)(b) (Transmission Electron Microscopy, TEM) 6 (a)(high Resolution Electron Microscopy, HREM) X (Energy Dispersive X-ray Spectroscopy, EDS) (Electron Energy Loss Spectroscopy, EELS) (Scanning Transmission Electron Microscopy, STEM) (High Angle Annular Dark Field, HAADF) 6 (a) 6
TEM TEM 6 (b)tem 20 nm EDS EELS TEM (3DAP) 20) 7 3DAP 100 nm (5-15 kv) 20% 10 nm m/n=2e(v dc +αv p )t 2 /l 2 m n e V dc V p αt l 20-40 ev 7 (position sensitive detector) (x,y) CCD 3DAP 3DAP n d nm i (x i, y i )(x i, y i, di/n) 100 nm 3DAP 20 nm 20 nm 200 nm 3DAP C, B, N, O 3DAP 7 7
3DAP 8 21) TEM Nd 4.5 Fe 76.8 B 18.5 Cu 0.2 Fe 3 B/Nd 2 Fe 14 B Cu TEM Fe 3 B Nd Nd Fe 3 B 3DAP 17 17 56 nm3 Nd Cu Fe 3 B Nd Cu Cu Fe 3 B Cu Fe 3 B 3DAP 8 Nd 4.5 Fe 76.8 B 18.5 Cu 0.2 Fe 3 B Nd Cu Cu Nd 21) 60 9 Al-2.5Cu-0.5Si-0.5Ge (at.%) Cu Cu 22) 8
9 Al-Cu-Ge-Si Cu GP 3DAP Cu 20) (011){001} Cu GP GP 5(b) 23,24) PH Cu Al Cu Cu Al Ni B2 NiAl 10 13Cr-8Ni-2.5Mo-1Al PH 510 C 1 h TEM B2 TEM B2 11 450 C Al Al 0.5 h Al 4 h Al 4 h 2 nm Al (NiAl) 10 24 /m 3 500 h 11 (b) Al Al NiAl 50at.% 12 11 10 510 C 4 h 13Cr-8Ni-2.5Mo-1Al B2 25) 9
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