pn 1 2 1 1947 1 (800MHz) (12GHz) (CPUDSP ) 1: MOS (MOSFET) CCD MOSFET MES (MESFET) (HBT) (HEMT) GTO MOSFET (IGBT) (SIT) pn { 3 3 3 pn 2 pn pn 1 2 sirafuji@dj.kit.ac.jp yoshimot@dj.kit.ac.jp 1
3 3.1 III Si(IV ) III ()p Si V V ()n Si 1(a) p Si( n Si) () 1: (a) p n (b) pn pn p n n p p n 1(b) p n (n p) p n V d ; V d = kt e ln n n0p p0 n 2 i! kt e ln N DN A n 2 i! : (1) p p0 n n0 n i p n p n (N D ) (N A ) 2
p n V V d 0 V 2(a) p n ()p n 0V V d + V 2(b) n p pn 2: pn (a) (b) pn - ev ev j = j 0 exp 0 1 j 0 exp kt kt (2) j 0 pn - pn pn pn d Poisson 2S 0 (V d 0 V )(N A + N D ) 1=2 d = (3) en A N D 3
p N A n N D S 0 d = 12S 0 (V d 0 V ) 1=3 (4) e(a 1 + a 2 ) N D (x) =N 0 +a 1 x N A (x) =N 0 0a 2 x C = S 0 d (5) 3.2 3(a) E G 3: (a) () (b) 3(b) pn ( ) pn ( ) ( 4(a) ) n p () 5 - V OC I SC I SC 4
4: (a) (b) I m V m R L = V m =I m P max P max = I m V m = I SC V OC FF (6) FF (Fill Factor) 1 - = I mv m P in = I SCV OCFF P in (7) P in (W) I (A) 0.10 0.05 0.00 I photo V i + I i R + s V R sh R s = 0 R sh = 100 Ω or I I (A) 0.12 0.10 0.08 0.06 I SC I m A V -0.05-0.10 R s = 0 R sh = 100 Ω R s = 0 or 5 Ω R sh = -1.0-0.5 0.0 0.5 1.0 V (V) R s = 5 Ω R sh = 0.04 P m = I m V m 0.02 0.00 0.0 0.2 0.4 V m V OC 0.6 0.8 1.0 1.2 V (V) 5: (a) -(b) (a) 4 ( ) () 5
3.3 3(a) () pn ( 4(b) ) ( ) 4 pn 2 2 ABC 3 pn 2: A B C 1 1. 1. 1.... 2. 3. 4. 2 3. 4. 2. [1 0 8] 3 4. 2. 3. [9; 10] 4... 2 1 3 1 4 4 2 1 5 5.1 1 2 () - () 6
- ( 6 ) pn - A A V V 6: () 2- () - 1 pa(=10 012 A) 1 pn 7 -- ev I I 0 exp : (8) nkt n 7 (shunt) R sh (series) R s 1 I 0 n R sh R s 1 R sh R s 2 Si 3 (n ) 7
10 0 10-1 10-2 10-3 10-4 10-5 10-6 V i + I i I + R s V R sh I / I 0 6 4 2-4 -2 2 4 1 qv / kt -2 100 I (ma) 80 60 di / dv = R s 40 10-7 10-8 10-9 0.0 0.1 0.2 0.3 0.4 0.5 20-2 -1 1 2 V (V) di / dv = R sh -20 7: pn - 3- pn - ( 8 ) () - pn + G H L EXT. DC BIAS + 8: 2 1/C 2 (pf 02 cm 4 ) V (V) 1/C 3 -V 3 (3)(4)(5) 4 8
4 (3) (5) 5 (4) (5) 4-1{- (1) 2 () - () ( 1) (2) 5(b) 0 5k ( ) - 5 6 7 R s R sh 7 5 FF 4-2{ -- (1) 2 () - () ( 1) (2) () 8 5.2 5.2.1 pn 9(a) (b) n + /p/p + (back surface eld; BSF ) p Si n + p + n + /p pn p/p + p Si ( I SC ) p/p + n + /p ( V OC ) 9
9: (BSF ) (a) (b) 5.2.2 pn 2 10 0 1.0 10 1 1300 1200 1100 1000 900 ( C) 10-1 0.8 Host : Si N(x) / N 0 10-2 10-3 ERFC GAUSS 0.6 0.4 ERFC GAUSS D 1/2 ( µm / hr 1/2 ) 10 0 10-1 P 10-4 0.2 B 10-5 0 1 2 x / (4Dt) 1/2 3 4 0.0 0.0 0.5 1.0 1.5 2.0 x / (4Dt) 1/2 2.5 3.0 10-2 0.60 0.70 0.80 1000 / T (K -1 ) 0.90 10: Si N(x; t) =N 0 erfc x 2 p Dt (9) N(x; t) = N 0 p exp Dt 0 x2 4Dt! (10) x erfc D Si B P 10 N(x; t) 10 10
5.2.3 Al () () W Ta 11: Al 5.2.4 12 p Si 3 n p Al ( ) Al Si pn Si Si (HF) HF () ( [1]-[2]) ( [3]-[8]) n + p + n p 3 (OCD PBF) 3 Si 11
12: 3 (PBF) (OCD) 4 B 2 O 3 P 2 O 5 3 5 Si B P 3 12[6] p + n + HF HF 1 HF ( [9]-[10]) 11 Al Al 4 5 12
3: p + PBF (B) B 2 O 3 1.4wt% 3000 rpm 20 3 200 C 20 1000 C 30 n + OCD (P) P 2 O 5 3g/100ml 4000 rpm 20 3 200 C 20 1000 C 30 9 j= I/ S pn 10 B P Si 4: Si (T =300K) E G 1:12 ev n i 1:08 2 10 10 cm 03 N C 2:86 2 10 19 cm 03 N V 3:10 2 10 19 cm 03 S 11:9 pn 1. () 2. : () 3. : () 4. : () 5. S.M.Sze: () 6. : () 7. : () 1. : () 1. A.S.Grove: () 13