17 2 2.1,,., (,, SiO 2, Si-N, ),,,,,.,.,,, (Schottky). [ ].,..,.,., 1 m 3 0.1 µm 10., 10 5, 10 7. [ ] (6N-103)..,.,. [ ] 1. (,, ) :,.,,.., (HF),.
18 2,,.,,. 2.,,,.,,.
2.1. 19 2.1.1 1. 1, (Schottky),,,. 2. Schottky I V, C V,, Schottky. 2.1.2,,, (space charge layer) (barrier)., /n, (+)/ ( ), /p, ( )/ (+). 2.1,. φ B, φ M φ S φ M χ S, V d ( ) φ M., (Walter Schottky, 1886-1976 ) Schottky. B V d V f Au n Si 2.1 Au - n Si Schottky.
20 2 log I f log I s 2.2 Shottky. V 2.1.3 ( ) V I,, I = I s [exp ( ) ] qv 1 ηkt (2.1). q, k Boltzman, T, η empirical constant ( ideality factor ) 1., I s, Richardson constant A, S, I s = SA T 2 exp ( ) qφb kt (2.2). A = 120 (A/cm 2 /K 2 ). (2.1), I f = I s exp ( ) qv ηkt (2.3), 2.2, log I f V, log I f, I s. I s, B 1 n, Schottky.
2.1. 21 (2), B = kt q ln I s (2.4) SA T 2. Empirical constant η, Schottky η = 1, (recommbination-generation current), η = 2. η, 2,,, log I V η 1 2. 2.3 ( )/n Si Schottky V I. (1) η = 1.01 V I.,. (2) (excess current), η = 1.08. (3),, η = 1.2 Schottky,. (4),. 2.1.4 1. (a) ( ) ULVAC VPC-260 (b) K-157MP (c) SCT-5T (d) Shimazu CR-2000 (e) 40 MHz KENWOOD CS-4035 (f) Kikusui PAL35-20 (g) SOAR MC-535A 2 (h) Shimadzu CR-2000 /,.,,. 1.,,. 2., PURIC,. Si, (100), P-dope, n-, 2.5 3.5 Ω cm.
22 2 10-3 (4) (3) (2) 10-4 (1) 10-5 10-6 I f [A] 10-7 10-8 10-9 10-10 10-11 (1) Pt 2 Si/n-(100)Si (2) PtSi/n-(100)Si (3) IrSi/n-(111)Si (4) NiSi/n-(100)Si 10-12 0 0.1 0.2 0.3 0.4 0.5 V [V] 2.3 /n Si Schottky.
2.1. 23 2.1.5 [ 1 ] ( ) 4 Si 2, ( ). 5, HCl H 2 O 2 10cc, 10.,. 5, Si. SiO 2 (H 2 O : HF 100 : 1), 5 mm,. 1,, HF. 1, 2 cm.. SiO 2, Si..,., 2 0.5 1.0 kg/cm 2..,. ** **,,.,,. (Ta) ( 0.5 mm, 10 mm).. RP SW ON,, ROUGH, 5, CLOSE, FORE WAY. 3, TP SW ON, STRAT,. 800. MAIN V.,. 15.,., 18 % (50 A),., 20 % (55 A ),,..
24 2,,,,,,. 370 C ( = 2.7),, 3 (Au-Si, 2 ). + 1, ( ),. SiO 2 (H 2 O : HF 100 : 1), 1 cm,,. 30,,. SiO 2, Si. 1., HF..,, 3. 1 cm.,..,.,.,..,,.. Ta ( 0.5 mm, 30 mm).., 0.2, 0.4, 0.6, 0.8, 1.0 mm. RP SW ON,, ROUGH, 5, CLOSE, FORE WAY. MAIN V.,. 15. 2 Ohmic contact :,.
2.1. 25,.,., 18 %,., 20 % ( 55 A ),, 6..,,,,,.,,.,. 2.1.5. 10,, STOP. 10,, CLOSE, TP SW OFF. RP SW OFF, ( ).,,.,, ( ),. [ 2 ] 2.1.6 pn, A, K, V I.,,,.,, CRT,.
26 2 100 k V D I = V i /100 k V i 2.4 I V. V I., I s. V D I 2.4 2, 100 kω., V I.., I s, η(n)., 0 800 mv.,,., (100 kω), (, V (V)/1 10 5 (Ω)),. 2.5 10 khz (±1 V), Schottky pn.. 1 µf PN +1 0-1 600 R V 10 k 2.5.. 10 cm.
2.1. 27 2.1.7. 2.1.8 1. 2. : 3. 4. : 1. 2.. 3. 4. 5. 1. 2. V-I 3. V-I η(n) I s. φ B. 4. (C V ). φ B, V d, n Si N. 5. pn,. 6. 1.,. 2. pn,,. 3. 4.
28 2 2.1.9, ( 1 ). [ ],., SI Pa., Torr. 1 Pa = 7.50062 10 3 Torr 400/3 Torr,. (Low Vacuum) : 100 Pa (Medium Vacuum) : 100 0.1 Pa (High Vacum) : 0.1 10 5 Pa (Ultra High Vacuum, UHV) : 10 5 Pa (Extreamly High Vacuum, XHV) : 10 7 Pa. [ ],,., (Roughing). 1. : (a) (b) ( ),,. 2. : (a),,,.. (b),.. T i,, T i. 10 5 Torr. (c) He,,..
2.1. 29 2.1.10 ( ) 1. (CH 3 COCH 3 ) :,. m.p.= 94.82 C, b.p.=56.30 C. 3 ; 18 C,.,. 2. (Cl 2 C=CHCl) : ; 87 C. m.p.= 73 C, b.p.=87.2 C..,,.,.,,. ** **,,.. 3. (C 2 H 5 OH) : m.p.= 114.5 C, b.p.=78.3 C 1. (HCl) :.,.. 2. (H 2 SO 4 ) :.,.,,,. 3. (HNO 3 ) :.,. 4. (HF) : (SiO 2 ),... 5. (H 2 O 2 ) :.. ( ),. 3 m.p.(melting point), b.p.(boiling point).