1 3 4 25. 31 46 54 63 63 71
79 90 BP 101 112 126 135
10 1990 21 1970 80 Made In America 80 90 1987 52 93 98-1 -
(1) (2) (3) (4) - 2 -
- 3 -
( 1980 1990 1990 10 21 PHP 1998. - 4 -
80 1976~1980 1987 52 1988 37 1980 1990 40-5 -
1990 20 1998 1999 DRAM 100 3 2002 1 23 2002. - 6 -
1980 DRAM 1990 DRAM DRAM DRAM 30 15 DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM 1980 1990-7 -
DRAM DRAM DRAM DRAM 1985 DRAM DRAM TI DRAM DRAM 1998 TI DRAM 1985 1998 DRAM 2000 DRAM 2001 DRAM 1999 12 NEC50 50 DRAM DRAM NEC 2000 4 2000 9 DRAM NEC DRAM 2002 11 NEC DRAM 2001 12 2002 4 DRAM DRAM 1998 DRAM - 8 -
1998 1 DRAM 1998 2 256M DRAM DRAM 2003 3 DRAM DRAM DRAM DRAM 55 (45 ) LSI 2003 4 7,000 9,000 ( ) 6 1 2002 7 90nm 11 SoC ASPLA(Advanced SoC Platform Corp.) 315 NEC 90nm NEC NEC 11 2002 3 21 2002. 2002 11 2 2002. - 9 -
1980 1990 DRAM DRAM 1980 90 2000 19(7) DRAM 2000 DRAM IDC Japan 5/2001 DRAM DRAM DRAM 1970 DRAM PMOS(P-channel Metal Oxide Semiconductor) 3 1973 TI 1 1 DRAM DRAM TI DRAM 16 DRAM DRAM DRAM DRAM http://www.watch.impress.co.jp/pc/docs/article/20010530/idc.htm - 10 -
DRAM PMOS NMOS(N-channel Metal Oxide Semiconductor) E D E/D NMOS CMOS(Complementary Metal Oxide Semiconductor) DRAM TI 1970 DRAM DRAM k DRAM TI 16 DRAM DRAM 64 DRAM DRAM 1980 4 DRAM DRAM TI 3 DRAM 1970 1980 64k DRAM NEC 256k DRAM 1 1M DRAM NMOS CMOS DRAM 1DRAM 1985 DRAM 1990 4M DRAM ( )1960 27.6-11 -
16M DRAM 64M 256M DRAM DRAM 1980 DRAM 1990 DRAM DRAM TI NEC M M M M M DRAM 1980 1990 2 DRAM 1980 DRAM DRAM TQC DRAM 1990 DRAM DRAM - 12 -
1980 1990 DRAM DRAM 1980 1990 DRAM DRAM ( ) DRAM - 13 -
DRAM DRAM DRAM DRAM DRAM DRAM 1990 1996 1998 3 5 DRAM 1996 DRAM 3040 1998 2532 1998 DRAM DRAM DRAM 5 DRAM 19961998 DRAM SRAM MOS 18-14 -
25 5 DRAM DRAM WSTS 1990 2002 2001 2002 DRAM DRAM DRAM TI 2.3 2002 10 30 2002. - 15 -
DRAM DSP DRAM DRAM DRAM 4 A IC S IC A A - 16 -
1997 3 SDR-3X 3 2000 11 ROBODEX2000ASIMO RSD-3X Business Week 2002 3 11 RoBolution BP 2001. [Business Week] - 17 -
1980 30 99 6 11 5 NEC 5 1969 MOS LSI MOS LSI QT-8D MOS LSI 1970 ROM 1977 19772 1979 WD-3000 PROM(Programmable Read Only 2002 3 18 pp.166-1692002. - 18 -
Memory) PROM PROM PROM PROM PROM ROM ROM ROM NMOS IQ-3000 1979 ROM NMOS 64 CMOS 2 128 CMOS NMOS 1.5 2 NMOS 64 ROM 3 ROM (Serial-parallel ROM cell structure) ROM IQ-3000 1981 CMOS 256 ROM IQ-5000 ROM ROM ROM ROM S. Kamuro, et al., 64k DSA ROM, IEEE Journal of Solid-State Circuits, Vol.SC-15, No.2, pp.253-254, April 1980. S. Kamuro, et al., High Density CMOS Read Only Memories for a Handheld Electronics Language Translator, IEEE Transaction on Consumer Electronics, Vol.CE-27, No.4, pp.605-611, November 1981. S. Kamuro, et al., A 256k ROM Fabricated Using n-well CMOS Process Technology, IEEE Journal of Solid-State Circuits, Vol.SC-17, No.4, pp.723-726, August 1982. - 19 -
DVD LSI TV LSI LSI LSI( ) 128 CPU LSI LSI LSI LSI NMOS 64 ROM CMOS 128 ROM a () - 20 -
NEC PC98 NEC PC98 PC98 PC98-21 -
- 22 -
SEMATEC - 23 -
- 24 -
15% 2 3 100 20 1990 1990 95 96 98 3 2001 GDP 3.4% 0.6% 4.2%0.9% 1970 80 90 21 (ITE- ) ( ITS) 70 80 90 21 PC 2 PC Analog wavefirst digital wavesecond digital wave 3 TV VCRPCDigital consumernetwork IC 1 OS Wintel 2 MPU (SOC) - 25 -
Figure of erit SOC Figure of erit 10 SOC 2010 78 SOC SOCDRAM LOGIC SOC ( ) ( 110 ( ) 180-130 2010-15 35 ( ) F2 ( ) LEEPL(Low Energy Beam Proximity Lithography) 13 EE 1970-28 -
21 FRAM( )MRAM ( ) 21-29 -
- 30 -
IT DRAM - 35 -
15% (1998 5 ) 1-36 -
LSI LSI 1998 Akademia - 38 -
21 21 SOC (2001 4 2006 3 ) (Selete) (STARC)2 STARC 11 Selete 700 STARC 140 (5 ) 250 100-40 -
(IDM) ( ) LSI Micron(DRAM )TSMC( )Cisco( )C-Cube( ) PCPC 1999 6 NEC DRAM 2001 3 IBM MPU(Cell) - 41 -
IC 1 FAB 2 SMICGSMC 2004-42 -
21 DVD SeleteStarc - 43 -
- 44 -
SEMATEC - 45 -
- 46 -
- 47 -
- 48 -
3 1 90nm - 49 -
- 50 -
- 51 -
- 52 -
- 53 -
- 54 -
8 - - - 55 -
60 NPI BTO/CTO ( EMSSCM IT - 56 -
EMS EMS - - - EMS / A DSL,FTTH) D WDM) GPSS PDA EMS - 57 -
1999 2004 EMS Market EMS Market EMS EMS EMS EMS EMS Top Priority Core EMS Outsource Gap EMS EMS - 58 -
DRAM,ASIC,Flash,LaserFiber Test/ HDD OS DataBase EMS Outsource CoreCompetency A. R&D EMS B. C. VCR,CD,DVD,HDD D. C EMS 1980, AMDHDD SeagateMaxtorWestern Digital DRAM Dell, Compaq, IBM Sun Micro Cisco Impact Motolora, Lucent, Nortel, Nokia, Ericsson EMS EMS EMS - 59 -
EMS EMS EMS NPI SI EMS BTO/CTO EMS -EMS - EMS - -Risk - - NPI - - EMS NPI - - - - BTO/CTO - - - 60 -
EMS 1. Q/C/D 2. R&D EMS IBM, 3. 3 1) 2) 3) Asset 4. 5. EMS EMS EMS 1 10 2 IT - 61 -
. 2002 7 Reference 100-62 -
DRAM Mos Memory MOS ( CPU ) 1988 1995-63 -
3 1 2 LSI 7 10 3 LSI System-in-package EETIMS System-on-chip LSI LSI System-in-package LSI LSI CPU IP LSI LSI Technologies integrated on a chip LSI 20 (DRAM) FeRAM IC 1 45-64 -
Chemical sensors Issues in System-on-Chip IP 1 IP LSI Silicon MEMS microphon MEMS 0.1m LSI SoC vs SiP EETIMS System in a Package 3D System Integration Ezampl North Corporation LSI LSI LSI LSI - 65 -
LSI LSI LSI TI LSI LSI LSI In 2014 15 LSI 15 30 DRAM 1 10 17 2 ( ) IP( ) - 67 -
LSI 3 LSI - 68 -
System LSI System-in-Package - 69 -
- 70 -
21 ( ) ( 110) LSI (3 )LSI 1996 1988 SEMATECH 10 6 1998 CRPFocus Center Research Program Si 1995 2-71 -
0.5V 1 0.10 0.07 Si3N4 5V Flash (TFT) - 73 -
600 LSI (110) (111) LSI O2 (100)Balanced CMOS (110) CMOS LSI CMOS 5 NANDNOR CMOS LSI LSI LSI 21-74 -
( ) - 75 -
21 LSI (2 ) 16-76 -
LSI 200mm 1 100 1m 1000 (100) MOS 910 MOS 1 25 kwh 250 48 t CO2 ( ) (600 ) LSI ( 13 ) ( - 77 -
- 78 -
DRAM 1 3.8 5.2 1.4 0.7 1.2 12-79 -
16K 64M 16M CMP( ) 64M DRAM AMAT (64K ) (4M ) (64M ) - 81 -
- 82 -
- 83 -
Virtual Concept Real Structure - 84 -
- 85 -
- 87 -
- 88 -
SEMATEC - 89 -
1990 ( 10 ) WINTEL MPUDRAM 2000 ( ) i IT IT IT IP I ( ) ( ) - 90 -
VS 1990 IC ( ) ( LSI - 91 -
LSI LSI LSI DRAM DRAM LSI LSI IP(Intellectual Property) IP LSI LSI 1 2 OS - 92 -
OS OS WINTEL 1 ( ) ( ) - 93 -
- 94 -
1980 1980-95 -
- 96 -
- 97 -
( ) ( ) - 98 -
- 99 -
- 100 -
1990 ( ) 1980 1960 1970 70 80 798081 81 4 90 % - 101 -
81 4 95 ( ) 15 20 1 1 1 1 AT&TIBM IBM RCA - 103 -
TI 1 1 RCA 70 70 10 85% 34-104 -
- 105 -
2 ( ) ( ) 1950 1-106 -
60 70-107 -
15 2 14 4 14 1 2 6 7 11 14 15 TN ( ) 2 14 % + - 109 -
1 20-110 -
- 111 -
- 112 -
20 Sherwin and Isenson, 1967 100 10 20-113 -
- 114 -
- 115 -
- 116 -
- 117 -
- 118 -
, 19991976 1970 70 De Solla Price, 1975 140-120 -
p.15-122 -
De Solla Price, Derek J., Science since Babylon (Enlarged Edition), New Haven: Yale University Press, 1975. 1999-123 -
Sherwin, Chalmers W., and Raymond S. Isenson, Project Hindsight: A Defense Department Study of the Utility of Research, Science, June 1967, pp. 1571-1577. - 124 -
1980 1990 1980 10-125 -
- 126 -
- 127 -
- 128 -
- 129 -
- 130 -
- 131 -
- 132 -
- 133 -
- 134 -