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1 WG5: ArF NGL
2 STRJ WS: March 5, 2004, WG5 Lithography 2 WG5 27
3 STRJ WS: March 5, 2004, WG5 Lithography 3 Outline 1. ITRS Lithography Roadmap 2. ArF (193nm), ArF F 2 (157nm),EUVL PEL (Leepl), EPL, ML2 Imprint, Innovation 3. CD 4.
4 STRJ WS: March 5, 2004, WG5 Lithography 4 Lithography ITRS Public Conference Dec. 2, 2003 Hsinchu, Taiwan
5 STRJ WS: March 5, 2004, WG5 Lithography (Lithography requirements) MPU 10% 10% 5X NGL NGL
6 EPL 22 nm 16 nm 65 nm 2004 MPU MEF STRJ WS: March 5, 2004, WG5 Lithography 6
7 STRJ WS: March 5, 2004, WG5 Lithography 7 CD CD Year of Production DRAM DRAM ½ Pitch (nm) Contact in resist (nm) Contact after etch (nm) Overlay CD control (3 sigma) (nm) MPU MPU ½ Pitch (nm) (uncontacted gate) MPU gate in resist (nm) MPU gate length after etch (nm) Contact in resist (nm) Contact after etch (nm) Gate CD control (3 sigma) (nm) Chip size (mm 2 ) Minimum field area
8 STRJ WS: March 5, 2004, WG5 Lithography 8 First Year of IC Production nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm + RET Technology Options at Technology Nodes (DRAM Half Pitch, nm) 193 nm + RET + litho-friendly designs nm + RET + litho-friendly designs 193 nm immersion lithography EPL, PEL 157 nm + RET + litho-friendly designs 45 Immersion 193 nm lithography + RET + litho-friendly design EUV, EPL, M L2 PEL EUV Narrow options 157 nm immersion + RET + litho-friendly designs Narrow 32 EPL, Imprint lithography options ML2 Narrow Options DRAM Half Pitch (Dense Lines) EUV, EPL 22 ML2, Imprint lithography Narrow Innovative Technology options 16 Innovative Technology Narrow ML2, EUV + RET options ML2 = Maskless Lithography EUV = Extreme Ultra Violet PEL = Proximity Electron Lithography EPL = Electron Projection Lithography RET = Resolution Enhancement Technology
9 STRJ WS: March 5, 2004, WG5 Lithography X-ray ion projection lithography Immersion lithography Imprint lithography
10 STRJ WS: March 5, 2004, WG5 Lithography KrF PSM ArF + PSM 65@ @ @ @ PSM 2001 Edition 2003 Edition PEL PXL IPL ML2 EPL EUV Innovation ArF + RET Immersion Litho Friendly RET Immersion Litho Friendly PEL ML2 EPL 130@ @2004 EUV RET Imprint Innovation
11 STRJ WS: March 5, 2004, WG5 Lithography nm 5 157nm EUV EPL ( ) (ROI: Return on Investment) ArF F2 (CaF 2 ) 1.8 nm (3 ) < 19 nm OPC (Optical Pattern Correction) LER SEM 30 nm.
12 STRJ WS: March 5, 2004, WG5 Lithography <45 nm 5 ROI NGL ( ) 7nm 7.2nm <30nm LER <1 nm (3 sigma) <7.2 nm
13 STRJ WS: March 5, 2004, WG5 Lithography 13 I. II. III.Immersion Immersion Lithography IV. Next Generation Lithography i. F2 ii. EUVL iii. EPL iv. Leepl v. ML2: Maskless Lithography vi. Imprint vii. Innovative Technology
14 STRJ WS: March 5, 2004, WG5 Lithography KrF K 1 =0.40 NA=0.85 K 1 =0.30 NA=0.95 ArF F2 = k 1 K 1 =0.40 NA=1 20 K 1 =0.30 NA=1.30 λ NA n=1.44 ArF Immersionn=1.37 F2 Immersion EUVL
15 STRJ WS: March 5, 2004, WG5 Lithography 15 Precision Equipment Company Development Headquarter The status of ArF
16 ArF ArF ArF OPC Mask Error Factor STRJ WS: March 5, 2004, WG5 Lithography 16
17 STRJ WS: March 5, 2004, WG5 Lithography 17 Precision Equipment Company Development Headquarter The status of Immersion
18 STRJ WS: March 5, 2004, WG5 Lithography 18 ( ) (index = n) Projection optics Wafer stage ( ) Wafer NA = n sin θ = k1 λ / NA = k1 λ / (n sin θ) = k1 (λ/n) / sin θ DOF = k2 (λ/n) / 2 (1-cos θ ) ~ k2 (λ/n) / sin 2 θ = k2 n λ / NA 2
19 1 STRJ WS: March 5, 2004, WG5 Lithography n Glass = 1.50 n H2O Air =
20 STRJ WS: March 5, 2004, WG5 Lithography 20
21 STRJ WS: March 5, 2004, WG5 Lithography 21 NA
22 STRJ WS: March 5, 2004, WG5 Lithography 22 ( /n) NA = n sin θ Resolution = k 1 λ / NA = k 1 λ / (n sin θ) = k 1 (λ/n) / sin θ /n ArF Air nm KrF H 2 O nm F2 N nm ArF H 2 O nm F2 PFPE nm ArF 134nm F 2 115nm
23 STRJ WS: March 5, 2004, WG5 Lithography 23 ArF 193nm 193nm 193nm (0.3mm) TE TM θ TM TE n wafer Wafer
24 STRJ WS: March 5, 2004, WG5 Lithography 24 ArF 1 : λ=193nm 65nm L/S = 140nm 65nm L/S
25 STRJ WS: March 5, 2004, WG5 Lithography 25 ArF 2 : λ=193nm 50nm L/S = 110nm 45nm L/S
26 2 STRJ WS: March 5, 2004, WG5 Lithography 26 n Glass = n Air = 1.00 n H 2O = 1.44 n Resist = 1.70
27 STRJ WS: March 5, 2004, WG5 Lithography 27 1 n = 1.00 n = 1.70 s p NA = 0.80
28 2 n= =64 =90 =100 Contrast S-Polar. P-Polar. non-polar. n= NA STRJ WS: March 5, 2004, WG5 Lithography 28
29 STRJ WS: March 5, 2004, WG5 Lithography 29 ( ) TE- TE TM TM nm p-polarization contrast nm nm 0.20
30 STRJ WS: March 5, 2004, WG5 Lithography 30 ArF ArF NA=1.05 F2 NA=0.85 ArF NA=1.23 F2 NA=0.93 Optics Mask Binary Alt-PSM Alt-PSM + ArF NA=1.0 65nm L/S 55nm L/S 50nm L/S ArF NA=1.2 60nm L/S 50nm L/S 45nm L/S
31 STRJ WS: March 5, 2004, WG5 Lithography 31 (Local fill) NA /
32 STRJ WS: March 5, 2004, WG5 Lithography 32 Precision Equipment Company Development Headquarter The status of F 2
33 F ArF or. CoO F vs. 2 STRJ WS: March 5, 2004, WG5 Lithography 33
34 STRJ WS: March 5, 2004, WG5 Lithography 34 Precision Equipment Company Development Headquarter The status of EUVL
35 STRJ WS: March 5, 2004, WG5 Lithography 35 The Advantages of EUVL EUVA, ASET, EUV LLC, International SEMATECH, MEDEA+. - Extendibility - High k 1 Lithography 45nm k 1 =0.85 (NA=0.25)
36 EUVL EUVL (ITRS) 25nm 5mJ/cm wph 120wph( 100wph) $20M nm ASET EUVA MIRAI 2005 EUVL STRJ WS: March 5, 2004, WG5 Lithography 36
37 STRJ WS: March 5, 2004, WG5 Lithography 37 EUVL EUVL EUV (100W 10-20W) Chemical Contamination EUV EUV EUV 60-70% 1/3 EUV 6 90% EUV
38 STRJ WS: March 5, 2004, WG5 Lithography 38 Precision Equipment Company Development Headquarter The status of EB Stepper The status of EB Stepper
39 EPL System Concept (4X Binary Mask) Scattering Contrast Deflector Beam Deflection Stage Scan Beam step/ Stage scan Reticle Transmitted Beam 2um Projection Lens 1 Projection Lens 2 Aperture Wafer Stencil Reticle Scattered Beam Reticle 1mm Sub-field 1x1mm Sub-fields Deflector Beam Deflection Reticle Stage Reticle Wafer Stage Sub-field 0.25x0.25mm Stage Scan Field size from Wafer one 200mm reticle 10mm x 25mm (Complementary) 20mm x 25mm Projection Lens x1/4 Mag. (Non-complementary) Wafer Chip Main Field Sub- Field Pattern Area ~300 mm 250 um Minor Strut 5mm ~25 mm 1mm Reticle Skirt 1.13mm 1/4 0.17mm Pattern on Wafer Stage Scan Beam Steppin g SF Stitching 250 STRJ WS: March 5, 2004, WG5 Lithography 39
40 STRJ WS: March 5, 2004, WG5 Lithography 40 The Advantages of EPL 200mm EPL Reticle DOF) - ( ) MASK SELETE EPL - SELETE DOF> 1:1CH verified! 50nm CH (FEP- 137) 40nm iso-l
41 EPL 6 SELETE Stitching SELETE I-SEMATECH EPL Reticle Stage Vacuum Chamber EO Column Wafer Vacuum Loader Wafer Stage Vacuum Chamber STRJ WS: March 5, 2004, WG5 Lithography 41
42 STRJ WS: March 5, 2004, WG5 Lithography 42 Dose (µc/cm 2 ) 8.5 EPL60nm Focus (µm)
43 STRJ WS: March 5, 2004, WG5 Lithography 43 Precision Equipment Company Development Headquarter The status of PEL
44 STRJ WS: March 5, 2004, WG5 Lithography 44 The Advantages of PEL 2kV Concept Low Energy E-beam Advantages No Proximity Effect Low Power Process Distortion Correction (Mask Error,Chip Error) High Sensitivity of Resist High Resolution Wide Process Window Easy for Accurate M&M Low Mask Cost High Throughput Parallel E-beam and simple scan Proximity Projection Simple Optics No Space Charge Effect Low Unit Cost High Throughput High Resolution
45 PEL 65nm Si FIB/FEB Gun Lens Aperture E-beam Main Deflector 50 m Distortion Correction Deflector Stencil Mask Wafer CH size:65nm/pitch:130nm 26mm X 33mm STRJ WS: March 5, 2004, WG5 Lithography 45
46 PEL STRJ WS: March 5, 2004, WG5 Lithography 46 HC In-situ In-situ CD IP CY ITRS Design Node nm β tool Production Tool PEL 45nm β tool Production Tool
47 Precision Equipment Company Development Headquarter The status of Mask Less Lithography STRJ WS: March 5, 2004, WG5 Lithography 47
48 Cell Projection Character Projection BLOCK LEEBDW Mapper FE BAA CLA MCA ETEC/ EB DMD ( ) DUV EUV DIVA MCC-VS MCC-BLOCK STRJ WS: March 5, 2004, WG5 Lithography 48
49 STRJ WS: March 5, 2004, WG5 Lithography 49 ML? 5wph or 10wph?
50 STRJ WS: March 5, 2004, WG5 Lithography 50 Precision Equipment Company Development Headquarter The status of Imprint
51 Imprint ( ) STRJ WS: March 5, 2004, WG5 Lithography 51
52 Precision Equipment Company Development Headquarter The status of Innovative Technology STRJ WS: March 5, 2004, WG5 Lithography 52
53 STRJ WS: March 5, 2004, WG5 Lithography 53 Innovative Technology for 22nm
54 STRJ WS: March 5, 2004, WG5 Lithography KrF PSM Ar F + PSM @ @ @ @2016 PSM 2001 Edition 2003 Edition PEL PXL IPL ML2 EPL EUV Innovation ArF + RET Immersion Litho Friendly RET Immersion Litho Friendly PEL ML2 EPL 130@ @2004 EUV RET Imprint Innovation
55 STRJ WS: March 5, 2004, WG5 Lithography Outline ITRS Lithography Roadmap 2. (Potential Solution) ArF (193nm), ArF F 2 (157nm),EUVL PEL (Leepl), EPL, ML2 Imprint, Innovation 3. CD 4.
56 Importance of Mask CD Tables CD Control Starts at the Mask 16 nm Node mm Overlay and CD Control after Exposure 152mm 152mm 40 nm mask line width 20 nm scattering bars CD Control after Etch EUV 10 nm printed line width 0.1nm 7 nm physical line width STRJ WS: March 5, 2004, WG5 Lithography 56
57 STRJ WS: March 5, 2004, WG5 Lithography 57 SEM Scatterometry Scatterometry CD-AFM Commercially available Software comparison of top down line scan of edge to golden image Tilt Beam SEM Scatterometry CD-AFM R&D Software to convert top down image to 3D image All suppliers appear to offer tilt beam now Dual Beam FIB (destructive)
58 Total CD variation (linear sum in nm) ITRS 2003: 4.0 nm 3σ binary mask Binary Mask iso Pitch (nm) mean dose variation across wafer hot plate temperature variation across wafer variation of aberrations across field mask intrafield focus,dose 90 nm 65 Total CD variation (linear sum in nm) σ 1 = mask CD variation R 1 = Mask Error factor R 2 = Lens Error R 3 = Bake Temp CD/ T T R 4 = Focus and Dose Variation Alt. Phase alt PSMShift Mask iso Pitch (nm) ITRS 2003: 4.0 nm 3σ mean dose variation across wafer hot plate temperature variation across wafer variation of aberrations across field mask intrafield focus,dose Sergei Postnikov and Scott Hector: Motorola for Litho TWG STRJ WS: March 5, 2004, WG5 Lithography 58
59 STRJ WS: March 5, 2004, WG5 Lithography 59 3σ Litho/Etch 10% Litho 4/5 Etch 1/5 15% Litho 2/3 Etch 1/3 10% Litho 2/3 Etch 1/3 (
60 STRJ WS: March 5, 2004, WG5 Lithography 60 LER/LWR LER = 2LWR LER LER
61 STRJ WS: March 5, 2004, WG5 Lithography 61 Proposal (2): Re-definition of CD variation and CD measurement (supplement) Total CD variation Device variation σ = σ + σ + + σ total 2 litho 2 etch 2 inter Device degradation Accurate CD measurement CD variation (across wafer) must remove influence of LER on CD CD variation (across chip) Accurate LER measurement CD variation LWR in Gate (due to LER) Longperiod must include long period LER Shortperiod Measurements: 2 um, 200 points
62 DRAM IDM Integrated Device Manufacturer Fabless Foundry Logic Manufacturing friendly design Lithography friendly design Mask friendly design RET/OPC friendly design Process/aberration friendly design STRJ WS: March 5, 2004, WG5 Lithography 62
63 STRJ WS: March 5, 2004, WG5 Lithography 63 RET RET RET / RET RET Sliming process Alternating PSM Attenuating PSM (off-axis, large sigma) (small sigma) Off-axis illumination Narrowing process resist for gate/semi dense for dense/trench for cont/via
64 STRJ WS: March 5, 2004, WG5 Lithography 64 (One pitch, one direction) (X architecture ) on-grid wire >M2 all wire (poly ) >V1 all via (cont ) gate pitch= (or n x ) Forbidden pitch RET RET NA Robust RET Robust OPC RET RET
65 OPC STRJ WS: March 5, 2004, WG5 Lithography 65 Rule Base OPC Rule Output Original Model Base OPC Dissect Sim & Correct Output
66 OPC STRJ WS: March 5, 2004, WG5 Lithography 66 MEBES Format Data [GB] With Aggressive OPC With Nominal OPC
67 STRJ WS: March 5, 2004, WG5 Lithography 67 5 Writing Inspection through put (pcs/month) Process Pellicle Cost DR Equipment price um DR / Mask cost = umDR 0.25umDR 0.18umDR 0.13umDR umDR 0.25umDR 0.18umDR 0.13umDR
68 STRJ WS: March 5, 2004, WG5 Lithography 68 (Foundry (SPIE 75%
69 Table 79a Optical Mask Requirements STRJ WS: March 5, 2004, WG5 Lithography 69 Table 59a Optical Mask Requirements roduction gy Node hp90 hp65 ½Pitch (nm) IC ½ Pitch (nm) nted Gate Length (nm) ysical Gate Length (nm) nimum half pitch (nm) nimum line (nm, in resist) [A] nimum line (nm, post etch) nimum contact hole (nm, post etch) ation [B] minal image size (nm) [C] imum primary feature size [D] C feature size (nm) clear resolution feature size (nm) opaque [E] cement (nm, multi-point) [F] rmity allocation to mask (assumption) ated lines, binary [G] formity (nm, 3 sigma) isolated lines tes), binary mask [H] ated lines, alternating phase shift [G] formity (nm, 3 sigma) isolated lines tes), alternating phase shift mask [I] se lines [G] formity (nm, 3 sigma) dense lines (DRAM half pitch), binary or attenuated t mask [J] tacts [G] formity (nm, 3 sigma), contact/vias [K] (nm)[l] to target (nm) [M] e (nm) [N] * form factor ness (nm, peak-valley) [O] CD uniformity (nm, 3 sigma) isolated lines (MPU gates), binary mask [H] CD uniformity (nm, 3 sigma) isolated lines (MPU gates), alternating phase shift mask [I] CD uniformity (nm, 3 sigma), contact/vias [K] 2005 Mask minimum primary feature size [D] Defect size (nm) [N] * sion uniformity to mask nd clear feature) (±% 3 sigma)
70 STRJ WS: March 5, 2004, WG5 Lithography LER/LWR 2. 50nm
71 STRJ WS: March 5, 2004, WG5 Lithography 71
72 STRJ WS: March 5, 2004, WG5 Lithography 72 STRJ WG5 Lithography Requirements Update. CD Uniformity LER/LWR SEMI Standard Update. Potential Solution Update. Difficult Challenges Update. Litho Friendly Design APC Update. Update.
73 STRJ WS: March 5, 2004, WG5 Lithography 73 ArF 65nm 45nm NGL CD Uniformity APC
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平成 19 年 5 月 30 日 記者説明会 次世代半導体微細加工技術が実現可能に ~ 国内 EUV リソグラフィ技術開発本格化へ解像度 26nm を達成 ~ 技術説明 第三研究部 森一朗 1 EUVL 技術開発フェーズへの認識 基礎研究 φ1 Feasibility study ASET, MIRAI1/2, EUVA, Leading PJ 基礎研究要素開発 量産を目指した基盤技術開発 MIRAI3
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