WG5: ArF NGL
STRJ WS: March 5, 2004, WG5 Lithography 2 WG5 27
STRJ WS: March 5, 2004, WG5 Lithography 3 Outline 1. ITRS Lithography Roadmap 2. ArF (193nm), ArF F 2 (157nm),EUVL PEL (Leepl), EPL, ML2 Imprint, Innovation 3. CD 4.
STRJ WS: March 5, 2004, WG5 Lithography 4 Lithography ITRS Public Conference Dec. 2, 2003 Hsinchu, Taiwan
STRJ WS: March 5, 2004, WG5 Lithography 5 2003 1 (Lithography requirements) MPU 10% 10% 5X NGL NGL
2003 2 EPL 22 nm 16 nm 65 nm 2004 MPU MEF STRJ WS: March 5, 2004, WG5 Lithography 6
STRJ WS: March 5, 2004, WG5 Lithography 7 CD CD Year of Production 2003 2004 2005 2006 2007 2008 2009 DRAM DRAM ½ Pitch (nm) 100 90 80 70 65 57 50 Contact in resist (nm) 130 110 100 90 80 70 60 Contact after etch (nm) 115 100 90 80 70 65 55 Overlay 35 32 28 25 23 21 19 CD control (3 sigma) (nm) 12.2 11.0 9.8 8.6 8.0 7.0 6.1 MPU MPU ½ Pitch (nm) (uncontacted gate) 107 90 80 70 65 57 50 MPU gate in resist (nm) 65 53 45 40 35 32 30 MPU gate length after etch (nm) 45 37 32 28 25 22 20 Contact in resist (nm) 130 122 100 90 80 75 60 Contact after etch (nm) 120 107 95 85 76 67 60 Gate CD control (3 sigma) (nm) 4.0 3.3 2.9 2.5 2.2 2.0 1.8 Chip size (mm 2 ) Minimum field area 704 704 704 704 704 704 704
STRJ WS: March 5, 2004, WG5 Lithography 8 First Year of IC Production 2003 100nm 2004 90nm 2005 80nm 2006 70nm 2007 65nm 2008 55nm 2009 50nm 2010 45nm 2011 40nm 2012 35nm 2013 32nm 2014 28nm 2015 25nm 2016 22nm 2017 20nm 2018 18 nm 90 193 nm + RET Technology Options at Technology Nodes (DRAM Half Pitch, nm) 193 nm + RET + litho-friendly designs 65 157 nm + RET + litho-friendly designs 193 nm immersion lithography EPL, PEL 157 nm + RET + litho-friendly designs 45 Immersion 193 nm lithography + RET + litho-friendly design EUV, EPL, M L2 PEL EUV Narrow options 157 nm immersion + RET + litho-friendly designs Narrow 32 EPL, Imprint lithography options ML2 Narrow Options DRAM Half Pitch (Dense Lines) EUV, EPL 22 ML2, Imprint lithography Narrow Innovative Technology options 16 Innovative Technology Narrow ML2, EUV + RET options ML2 = Maskless Lithography EUV = Extreme Ultra Violet PEL = Proximity Electron Lithography EPL = Electron Projection Lithography RET = Resolution Enhancement Technology
STRJ WS: March 5, 2004, WG5 Lithography 9. 2001 2003 X-ray ion projection lithography Immersion lithography Imprint lithography
STRJ WS: March 5, 2004, WG5 Lithography 10 140 120 100 90 80 70 60 50 40 30 20 KrF PSM ArF + PSM 65@2007 45@2010 32@2013 22@2016 157 + PSM 2001 Edition 2003 Edition PEL PXL IPL ML2 EPL EUV Innovation ArF + RET Immersion Litho Friendly 157 + RET Immersion Litho Friendly PEL ML2 EPL 130@2001 90@2004 EUV RET Imprint Innovation
STRJ WS: March 5, 2004, WG5 Lithography 11-2009 50 nm 5 157nm EUV EPL ( ) (ROI: Return on Investment) ArF F2 (CaF 2 ) 1.8 nm (3 ) < 19 nm OPC (Optical Pattern Correction) LER SEM 30 nm.
STRJ WS: March 5, 2004, WG5 Lithography 12-2010 <45 nm 5 ROI NGL ( ) 7nm 7.2nm <30nm LER <1 nm (3 sigma) <7.2 nm
STRJ WS: March 5, 2004, WG5 Lithography 13 I. II. III.Immersion Immersion Lithography IV. Next Generation Lithography i. F2 ii. EUVL iii. EPL iv. Leepl v. ML2: Maskless Lithography vi. Imprint vii. Innovative Technology
STRJ WS: March 5, 2004, WG5 Lithography 14 200 100 70 50 40 30 KrF K 1 =0.40 NA=0.85 K 1 =0.30 NA=0.95 ArF F2 = k 1 K 1 =0.40 NA=1 20 K 1 =0.30 NA=1.30 λ NA n=1.44 ArF Immersionn=1.37 F2 Immersion EUVL
STRJ WS: March 5, 2004, WG5 Lithography 15 Precision Equipment Company Development Headquarter The status of ArF
ArF ArF ArF OPC Mask Error Factor STRJ WS: March 5, 2004, WG5 Lithography 16
STRJ WS: March 5, 2004, WG5 Lithography 17 Precision Equipment Company Development Headquarter The status of Immersion
STRJ WS: March 5, 2004, WG5 Lithography 18 ( ) (index = n) Projection optics Wafer stage ( ) Wafer NA = n sin θ = k1 λ / NA = k1 λ / (n sin θ) = k1 (λ/n) / sin θ DOF = k2 (λ/n) / 2 (1-cos θ ) ~ k2 (λ/n) / sin 2 θ = k2 n λ / NA 2
1 STRJ WS: March 5, 2004, WG5 Lithography 19 0.80 0.85 0.90 0.95 1.00 1.10 1.20 1.30 n Glass = 1.50 n H2O Air = 1.44 1.00
STRJ WS: March 5, 2004, WG5 Lithography 20
STRJ WS: March 5, 2004, WG5 Lithography 21 NA
STRJ WS: March 5, 2004, WG5 Lithography 22 ( /n) NA = n sin θ Resolution = k 1 λ / NA = k 1 λ / (n sin θ) = k 1 (λ/n) / sin θ /n ArF Air 1.0 193nm KrF H 2 O 1.36 182nm F2 N 2 1.0 157nm ArF H 2 O 1.44 134nm F2 PFPE 1.37 115nm 1.00 0.94 0.81 0.69 0.60 ArF 134nm F 2 115nm
STRJ WS: March 5, 2004, WG5 Lithography 23 ArF 193nm 193nm 193nm (0.3mm) TE TM θ TM TE n wafer Wafer
STRJ WS: March 5, 2004, WG5 Lithography 24 ArF 1 : λ=193nm 65nm L/S = 140nm 65nm L/S
STRJ WS: March 5, 2004, WG5 Lithography 25 ArF 2 : λ=193nm 50nm L/S = 110nm 45nm L/S
2 STRJ WS: March 5, 2004, WG5 Lithography 26 n Glass = 1.50 0.85 0.95 0.95 1.05 1.15 1.25 1.35 n Air = 1.00 n H 2O = 1.44 n Resist = 1.70
STRJ WS: March 5, 2004, WG5 Lithography 27 1 n = 1.00 n = 1.70 s p NA = 0.80
2 n=1.50 0.90 1.20 1.30 =64 =90 =100 Contrast 1 0.8 0.6 0.4 0.2 0-0.2-0.4 S-Polar. P-Polar. non-polar. n=1.70 0 0.2 0.4 0.6 0.8 1 1.2 1.4 NA STRJ WS: March 5, 2004, WG5 Lithography 28
STRJ WS: March 5, 2004, WG5 Lithography 29 ( ) TE- TE TM TM- 1.0 0.5 55nm p-polarization contrast 0.47 50nm 0.35 45nm 0.20
STRJ WS: March 5, 2004, WG5 Lithography 30 ArF ArF NA=1.05 F2 NA=0.85 ArF NA=1.23 F2 NA=0.93 Optics Mask Binary Alt-PSM Alt-PSM + ArF NA=1.0 65nm L/S 55nm L/S 50nm L/S ArF NA=1.2 60nm L/S 50nm L/S 45nm L/S
STRJ WS: March 5, 2004, WG5 Lithography 31 (Local fill) NA /
STRJ WS: March 5, 2004, WG5 Lithography 32 Precision Equipment Company Development Headquarter The status of F 2
F 2 1997 2003 ArF or. CoO F vs. 2 STRJ WS: March 5, 2004, WG5 Lithography 33
STRJ WS: March 5, 2004, WG5 Lithography 34 Precision Equipment Company Development Headquarter The status of EUVL
STRJ WS: March 5, 2004, WG5 Lithography 35 The Advantages of EUVL - - - - EUVA, ASET, EUV LLC, International SEMATECH, MEDEA+. - Extendibility - High k 1 Lithography 45nm k 1 =0.85 (NA=0.25)
EUVL EUVL 45nm @2010 (ITRS) 25nm 5mJ/cm 2 60-80wph 120wph( 100wph) $20M 0.1-0.15nm ASET EUVA MIRAI 2005 EUVL STRJ WS: March 5, 2004, WG5 Lithography 36
STRJ WS: March 5, 2004, WG5 Lithography 37 EUVL EUVL EUV (100W 10-20W) Chemical Contamination EUV EUV EUV 60-70% 1/3 EUV 6 90% EUV
STRJ WS: March 5, 2004, WG5 Lithography 38 Precision Equipment Company Development Headquarter The status of EB Stepper The status of EB Stepper
EPL System Concept (4X Binary Mask) Scattering Contrast Deflector Beam Deflection Stage Scan Beam step/ Stage scan Reticle Transmitted Beam 2um Projection Lens 1 Projection Lens 2 Aperture Wafer Stencil Reticle Scattered Beam Reticle 1mm Sub-field 1x1mm Sub-fields Deflector Beam Deflection Reticle Stage Reticle Wafer Stage Sub-field 0.25x0.25mm Stage Scan Field size from Wafer one 200mm reticle 10mm x 25mm (Complementary) 20mm x 25mm Projection Lens x1/4 Mag. (Non-complementary) Wafer Chip Main Field Sub- Field Pattern Area ~300 mm 250 um Minor Strut 5mm ~25 mm 1mm Reticle Skirt 1.13mm 1/4 0.17mm Pattern on Wafer Stage Scan Beam Steppin g SF Stitching 250 STRJ WS: March 5, 2004, WG5 Lithography 39
STRJ WS: March 5, 2004, WG5 Lithography 40 The Advantages of EPL 200mm EPL Reticle - 100 DOF) - ( ) MASK - 4 - SELETE EPL - SELETE DOF> 4um @70nm 1:1CH verified! 50nm CH (FEP- 137) 40nm iso-l
EPL 6 SELETE Stitching SELETE I-SEMATECH EPL Reticle Stage Vacuum Chamber EO Column Wafer Vacuum Loader Wafer Stage Vacuum Chamber STRJ WS: March 5, 2004, WG5 Lithography 41
STRJ WS: March 5, 2004, WG5 Lithography 42 Dose (µc/cm 2 ) 8.5 EPL60nm Focus (µm) -5-2.5 0 +2.5 +5 8 7.5
STRJ WS: March 5, 2004, WG5 Lithography 43 Precision Equipment Company Development Headquarter The status of PEL
STRJ WS: March 5, 2004, WG5 Lithography 44 The Advantages of PEL 2kV Concept Low Energy E-beam Advantages No Proximity Effect Low Power Process Distortion Correction (Mask Error,Chip Error) High Sensitivity of Resist High Resolution Wide Process Window Easy for Accurate M&M Low Mask Cost High Throughput Parallel E-beam and simple scan Proximity Projection Simple Optics No Space Charge Effect Low Unit Cost High Throughput High Resolution
PEL 65nm Si FIB/FEB Gun Lens Aperture E-beam Main Deflector 50 m Distortion Correction Deflector Stencil Mask Wafer CH size:65nm/pitch:130nm 26mm X 33mm STRJ WS: March 5, 2004, WG5 Lithography 45
PEL STRJ WS: March 5, 2004, WG5 Lithography 46 HC In-situ In-situ CD IP CY 2001 2002 2003 2004 2005 2006 2007 2008 2009 ITRS Design Node 130 115 100 90 80 70 65 60 55 65nm β tool Production Tool PEL 45nm β tool Production Tool
Precision Equipment Company Development Headquarter The status of Mask Less Lithography STRJ WS: March 5, 2004, WG5 Lithography 47
Cell Projection Character Projection BLOCK LEEBDW Mapper FE BAA CLA MCA ETEC/ EB DMD ( ) DUV EUV DIVA MCC-VS MCC-BLOCK STRJ WS: March 5, 2004, WG5 Lithography 48
STRJ WS: March 5, 2004, WG5 Lithography 49 ML? 5wph or 10wph?
STRJ WS: March 5, 2004, WG5 Lithography 50 Precision Equipment Company Development Headquarter The status of Imprint
Imprint ( ) STRJ WS: March 5, 2004, WG5 Lithography 51
Precision Equipment Company Development Headquarter The status of Innovative Technology STRJ WS: March 5, 2004, WG5 Lithography 52
STRJ WS: March 5, 2004, WG5 Lithography 53 Innovative Technology for 22nm
STRJ WS: March 5, 2004, WG5 Lithography 54 140 120 100 90 80 70 60 50 40 30 20 KrF PSM Ar F + PSM 157 + 65@2007 45@2010 32@2013 22@2016 PSM 2001 Edition 2003 Edition PEL PXL IPL ML2 EPL EUV Innovation ArF + RET Immersion Litho Friendly 157 + RET Immersion Litho Friendly PEL ML2 EPL 130@2001 90@2004 EUV RET Imprint Innovation
STRJ WS: March 5, 2004, WG5 Lithography 55 1. Outline ITRS Lithography Roadmap 2. (Potential Solution) ArF (193nm), ArF F 2 (157nm),EUVL PEL (Leepl), EPL, ML2 Imprint, Innovation 3. CD 4.
Importance of Mask CD Tables CD Control Starts at the Mask 16 nm Node - 2018 6.35mm Overlay and CD Control after Exposure 152mm 152mm 40 nm mask line width 20 nm scattering bars CD Control after Etch EUV 10 nm printed line width 0.1nm 7 nm physical line width STRJ WS: March 5, 2004, WG5 Lithography 56
STRJ WS: March 5, 2004, WG5 Lithography 57 SEM Scatterometry Scatterometry CD-AFM 600 5 500 400 300 200 100 0-480 -400-320 -240-160 -80 0 80 160 Commercially available Software comparison of top down line scan of edge to golden image Tilt Beam SEM Scatterometry CD-AFM R&D Software to convert top down image to 3D image All suppliers appear to offer tilt beam now Dual Beam FIB (destructive)
Total CD variation (linear sum in nm) 30 25 20 15 10 5 0 ITRS 2003: 4.0 nm 3σ binary mask Binary Mask 240 360 iso Pitch (nm) mean dose variation across wafer hot plate temperature variation across wafer variation of aberrations across field mask intrafield focus,dose 90 nm 65 Total CD variation (linear sum in nm) σ 1 = mask CD variation R 1 = Mask Error factor R 2 = Lens Error R 3 = Bake Temp CD/ T T R 4 = Focus and Dose Variation 20 15 10 5 0 Alt. Phase alt PSMShift Mask 240 360 iso Pitch (nm) ITRS 2003: 4.0 nm 3σ mean dose variation across wafer hot plate temperature variation across wafer variation of aberrations across field mask intrafield focus,dose Sergei Postnikov and Scott Hector: Motorola for Litho TWG STRJ WS: March 5, 2004, WG5 Lithography 58
STRJ WS: March 5, 2004, WG5 Lithography 59 3σ Litho/Etch 10% Litho 4/5 Etch 1/5 15% Litho 2/3 Etch 1/3 10% Litho 2/3 Etch 1/3 (
STRJ WS: March 5, 2004, WG5 Lithography 60 LER/LWR LER = 2LWR LER LER
STRJ WS: March 5, 2004, WG5 Lithography 61 Proposal (2): Re-definition of CD variation and CD measurement (supplement) Total CD variation Device variation σ = σ + σ + + σ total 2 litho 2 etch 2 inter Device degradation Accurate CD measurement CD variation (across wafer) must remove influence of LER on CD CD variation (across chip) Accurate LER measurement CD variation LWR in Gate (due to LER) Longperiod must include long period LER Shortperiod Measurements: 2 um, 200 points
DRAM IDM Integrated Device Manufacturer Fabless Foundry Logic Manufacturing friendly design Lithography friendly design Mask friendly design RET/OPC friendly design Process/aberration friendly design STRJ WS: March 5, 2004, WG5 Lithography 62
STRJ WS: March 5, 2004, WG5 Lithography 63 RET RET RET / RET RET Sliming process Alternating PSM Attenuating PSM (off-axis, large sigma) (small sigma) Off-axis illumination Narrowing process resist for gate/semi dense for dense/trench for cont/via
STRJ WS: March 5, 2004, WG5 Lithography 64 (One pitch, one direction) (X architecture ) on-grid wire >M2 all wire (poly ) >V1 all via (cont ) gate pitch= (or n x ) Forbidden pitch RET RET NA Robust RET Robust OPC RET RET
OPC STRJ WS: March 5, 2004, WG5 Lithography 65 Rule Base OPC Rule Output Original Model Base OPC Dissect Sim & Correct Output
OPC STRJ WS: March 5, 2004, WG5 Lithography 66 MEBES Format Data [GB] With Aggressive OPC With Nominal OPC 2000 2001 2002
STRJ WS: March 5, 2004, WG5 Lithography 67 5 Writing Inspection through put (pcs/month) Process Pellicle 600 30 Cost 4 0.5 DR Equipment price 500 25 0.5um DR / Mask cost = 1 3 2 400 300 200 20 15 10 1 100 5 0 0.5umDR 0.25umDR 0.18umDR 0.13umDR 0 0 0.5umDR 0.25umDR 0.18umDR 0.13umDR
STRJ WS: March 5, 2004, WG5 Lithography 68 (Foundry (SPIE 75%
Table 79a Optical Mask Requirements STRJ WS: March 5, 2004, WG5 Lithography 69 Table 59a Optical Mask Requirements roduction 2003 2004 2005 2006 2007 2008 2009 gy Node hp90 hp65 ½Pitch (nm) 100 90 80 70 65 57 50 IC ½ Pitch (nm) 107 90 80 70 65 57 50 nted Gate Length (nm) 65 53 45 40 35 32 28 ysical Gate Length (nm) 45 37 32 28 25 22 20 nimum half pitch (nm) 100 90 80 70 65 57 50 nimum line (nm, in resist) [A] 65 53 45 40 35 32 30 nimum line (nm, post etch) 45 37 32 28 25 22 20 35 32 28 25 23 21 19 nimum contact hole (nm, post etch) 115 100 90 80 70 65 55 ation [B] 4 4 4 4 4 4 4 minal image size (nm) [C] 260 212 180 160 140 128 112 imum primary feature size [D] 182 148.4 126 112 98 89.6 78.4 C feature size (nm) clear 200 180 160 140 130 114 100 -resolution feature size (nm) opaque [E] 130 106 90 80 70 64 56 cement (nm, multi-point) [F] 21 19 17 15 14 13 12 rmity allocation to mask (assumption) 0.4 0.4 0.4 0.4 0.4 0.4 0.4 ated lines, binary [G] 1.4 1.4 1.4 1.4 1.6 1.6 1.6 formity (nm, 3 sigma) isolated lines tes), binary mask [H] 4.6 3.8 3.3 2.9 2.2 2.0 1.8 ated lines, alternating phase shift [G] 1 1 1 1 1 1 1 formity (nm, 3 sigma) isolated lines tes), alternating phase shift mask [I] 6.4 5.3 4.6 4.0 3.6 3.1 2.9 se lines [G] 2 2 2 2 2.5 3 3 formity (nm, 3 sigma) dense lines (DRAM half pitch), binary or attenuated t mask [J] 2004 9.8 8.8 7.8 6.9 5.1 3.7 3.3 tacts [G] 3 3 3 3 3.5 4 4 formity (nm, 3 sigma), contact/vias [K] 5.0 4.4 3.9 3.5 2.6 2.1 1.8 (nm)[l] 15.2 13.7 12.2 10.6 9.9 8.7 7.6 to target (nm) [M] 8.0 7.2 6.4 5.6 5.2 4.6 4.0 e (nm) [N] * 80 72 64 56 52 45.6 40 form factor 152 152 6.35 ness (nm, peak-valley) [O] 480 410 365 320 298 252 192 CD uniformity (nm, 3 sigma) isolated lines (MPU gates), binary mask [H] CD uniformity (nm, 3 sigma) isolated lines (MPU gates), alternating phase shift mask [I] CD uniformity (nm, 3 sigma), contact/vias [K] 2005 Mask minimum primary feature size [D] Defect size (nm) [N] * sion uniformity to mask nd clear feature) (±% 3 sigma) 1 1 1 1 1 1 1
STRJ WS: March 5, 2004, WG5 Lithography 70 1. LER/LWR 2. 50nm 3. 4. 5. 6. 7.
STRJ WS: March 5, 2004, WG5 Lithography 71
STRJ WS: March 5, 2004, WG5 Lithography 72 STRJ WG5 Lithography Requirements Update. CD Uniformity LER/LWR SEMI Standard Update. Potential Solution Update. Difficult Challenges Update. Litho Friendly Design APC Update. Update.
STRJ WS: March 5, 2004, WG5 Lithography 73 ArF 65nm 45nm NGL CD Uniformity APC