8 (2006 ) X ( ) 1. X X X 2. ( ) ( ) ( 1) X (a) (b) 1: (a) (b)

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8 (2006 ) X ( ) 1. X X X 2. ( ) ( ) ( 1) X (a) (b) 1: (a) (b)

X hkl 2θ ω 000 2: ω X 2θ X 3: X 2 X ω X 2θ X θ-2θ X X 2-1. ( ) ( 3) X 2θ ω 4 Si GaAs Si/Si GaAs/GaAs X

2θ : 2 2θ 000 ω 000 ω ω = θ 4: 2θ ω ( ) 5: ω = θ ω θ ( ) 100 1000 2-2. ( ) ω-2θ( θ-2θ) X θ θ (a) θ sub θ (b) θ sub θ 6: ω 2θ (a) (b)

5 ω = θ ω θ 6 d sub θ sub X ( Cu-K α1 1.5405Å) d epi θ d epi = sin θ sub sin(θ sub + θ) d sub (1) (1) X X X X X (2) 7: ( ) / ω-2θ 8 (a) (c)

8: (a) (b) (c) (a) (b) (c) (b) 6 Å 6.06 Å( 1%) 8-(a) (a) 6Å ( 9) ν 1/3 c = 6.0 + 1 + ν (6.06 6) = 6.12Å 1 ν a 9: a0 c a= c a c ν = 1/3 (115) Cu-K α1 (λ =1.5405Å) X (115) 41.84 40.92 0.9 1 (115) (001) 15.79 16.09 0.3 2 0.9 0.3 ω-2θ 10-(b) X 1 (115) 2-2 1.155Å 1.176Å 2d sin θ = λ 2 cos θ = [115] [001] /( [115] [001] ) a, c 1 1/6.0 5 5/6.12

(a) (b) (c) 10: (a) (b) (c)ω-2θ ( ω = θ ω, θ ) ( ) ω-2θ X 10-(c) X ( ω = θ ) 11 OAP (AO AP ) ω-2θ Q OP ( ) Q( ) X k r k i k r OAP OA Q ω-2θ P: Q: Q, Q : B 11: B k i k r O Q Q P θ Q ki k r A A Q P O OP ω-2θ X Q Q Q k r Q ( 10-(c) ) ( 11 ) Q

Q Q 12 Q Q 12 ( ) Q Q 11 OAP X 12 X 11 OBP P ω-2θ k r Q Q Q Q 12: X ( ) Q Q Q Q QQ QQ Q θ Q = 1 2 QA O (= 1 2 QB O) θ Q = 1 2 Q A O ( θ Q = 1 2 Q B O) 11 θ 2 ( A, B P, Q, O )θ Q = θ Q + 2 θ = θ Q 2 θ θ θ = 1 4 {θ Q θ Q } θ Q θ Q = θ Q + 2 θ = 1 2 {θ Q + θ Q } (2) θ Q θ Q θ Q ( 12 ) P θ P Q θ Q θ Q θ Q θ P θ PQ θ PQ θ Q = 1 2 {θ Q + θ Q } (3) = θ P + 1 2 { θ PQ + θ PQ } (4) 1 2 { θ PQ + θ PQ } = θ PQ 1 d epi = sin θ P sin(θ P + θ PQ ) d sub (5)

(3) () GaAs(001) InGaAs (GaAs InAs ) In x Ga 1 x As (a InGaAs (x)) In x GaAs (a GaAs ) InAs (a InAs ) ( ) a InGaAs (x) = xa InAs + (1 x)a GaAs (6) InGaAs x ( 13) a,b c 13: / X GaAs InGaAs c (004) (004) (d 004 ) a InGaAs GaAs InGaAs 8 (a) (c) (115) d 115 a(=b ) c 3 d 004 = 1 4 c (7) d 115 = 1 (8) 2 + 25 a 2 c 2 c = 4d 004 (9) 1 a = (10) 1 2d 2 115 25 32d 2 004 3 (hkl) d hkl = 1/ (h 2 + k 2 )/a 2 + l 2 /c 2

c = a ( 8 (c) ) 6 x = a InGaAs a GaAs a InAs a GaAs (11) InGaAs In c a ν(= c 12 /{c 11 + c 12 }) a 0 a c a = a a 0 c a = 1 + ν a (12) 1 ν a 0 ν 1/3 a = (c a)/2 (4) (k ) c (k ) () ω-2θ X a, b 14: ω-2θ 19 IP(imaging plate) ω, θ X 14 (ω ) ω = θ ω θ ω-2θ 2θ 2θ ( 15) k r

k r c C (P) 2θ ω k i B A O a,b 15: 2θ ω ( ) 16: A C 8 (a) (c) k i k r ( ) X X 16 A (k a, k b a, c )C ( O P ) ( ) A C 8-(a) A 8-(b) (c) B C

( ) fa fb (b-1) fa (b-2) } fa (a) (b) 17: (a) (b) ( ) X (b-1) (b-2) ( ) 3. ( ) X (multi quantum well: MQW) X 3-1. 17-(b) (b-1) (b-2) () 18 (004) 17-(b) 4 0 (004) ( (0016) ) 1/4(4/16) 4 17

4 17-(a) l 4 ( (0016) ) 0 f = f a 4 m=0 exp 2πi( m 4 l) = { 4fa : l = 4n(n ) 0 : l 4n(l, n ) 0 ±1 ±2 f a (13) 4 f = f m exp 2πi(m/4 l) (14) m=0 3-2. ω-2θ 18 0 0 ±1 ±2... 17(b-1) f 0 = f 1 = f 2 = f a f 3 = f b f 0 = f 1 = f a f 3 f 2 = f b InP/InGaAs/InP 0 ((0016) ) (004) -1 1-2 2 ((0015) ) ((0017) ) ((0014) ) ((0018) ) 000 002 002 CTR 6 θ [00l] 18: 0 19: X CTR InP/InGaAs/InP InP 002 CTR 002 X CTR

14 l = 4n + 2 ( ±2 ) (b-2) ( ) 4 () X CTR : (X CTR ) X X X CTR CTR Crystal Truncation Rod 19 InP (002) X CTR CTR 20 X n(r) d(r) u(r)( 0) f(r)( 0) n(r) = f(r) {d(r) u(r)} (15) ( ) d u f D(k) U(k) F (k) n N(k) N(k) = F (k) {D(k) U(k)} (16) d(r) ( ) u(r) D(k) U(k) D u U D ( ) F f F F D F F (CTR ) f(r) n(r) d(r) u(r) F (k) N(k) CTR D(k) U(k) CTR 20: CTR () f(r) F (k) 4 X X

X CTR X CTR X 5 () X X CTR X X : 1. : ( 1981). 2. : X ( 1995). 3. (B.D. Cullity) : X ( 1961). X : 1. : ( 1997). 2. : III-V ( 1994). X CTR : 1. I.K. Robinson, Phys. Rev. B, 33 3830 (1986). 2. I.K. Robinson, and D.J. Tweet, Rep. Prog. Phys. 55 599 (1992). 3. : 71 453 (2002). 4. : 71 535 (2002). 5 r fr r n(r) F (k) = f r exp ik r = n(r) exp ik rdr F (k) fr n(r) X

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