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1 可視赤外線観測装置技術ワークショップ 2 月 23 日 14:30-15:00 光 MEMS :Deformable mirror 東北大学大学院工学研究科ナノメカニクス専攻羽根一博
2 発表内容 1. 光 MEMS の紹介 マイクロミラー 可変格子 集積型センサ Si 導波路干渉計 2. 焦点可変デフォーマブルミラーの製作 曲げモーメント駆動による焦点可変ミラー 焦点可変ミラーを備えた光スキャナー 波面補償デフォーマブルミラーの製作
3 Applications of laser scanning to display Automobile application Bi-axial MEMS scanner Mobile phone application
4 Crystal Si micro mirror fabricated from SOI wafer Flat crystal Si mirror Vertical comb drive actuator While view of the micro mirror
5 Motion of Micro mirror 500μm
6 2 軸静電くしスキャナ スキャンイメージ 500μm ミラー共振周波数 :40kHz フレーム共振周波数 :162Hz ミラー電圧 :12V(11.5 度 ) フレーム電圧 :10V(14 度 ) 圧力 :1Pa 真空 2 軸静電くしスキャナ H.M.Chu, K.Hane, Sens.Actu.(2011) in press
7 Tunable gratings Comb actuator Electrode Electrode Grating Springs Design *Self-suspended thin grating (300nm) *Grating period : 600nm Fabrication *Self-suspended thin grating is connected a thick (5um)actuator
8 ブレーズのある周期可変回折格子 (1.5μm 帯 ) Anchor 300µm Spring for grating Spring for actuator Movable comb Fixed comb Blazed grating
9 Shift of angle (degrees) Displacement (µm ) 製作結果 ( ブレーズ格子部 ) と測定結果 15µm Grating period 17.5 µm Shift of diffracted angle Calculated displacement 25nm shift Applied voltage (V)
10 Principle of tunable Fabry-Perot filter Electrode(Al) Si3N4 Air gap Si substrate d Reflection is controlled by changing gap
11 Movement of suspended membrane 100μm White light illumination, d 1 =170μm d 2 =70μm
12 3D integrated optical scanner Back reflected Scanning beam Scanning Thermal actuator for large scanning angle 3D bulk micro optical bench for pre-alignment Doped poly-si (heater) Si 3 N 4 Al (expansion material)
13 Actuator motion Twin type Single type electrode Micro-mirror Mirror angle over 15 deg. is obtained. Driving voltage is 20 V. Current is 6mA. terrace for LD
14 Beam scanning Screen He-Ne 30cm LD Scanning with He-Ne laser beam Scanner integrated with LD Flat micro-mirror generates small spot. Only putting LD, optical axis is aligned.
15 Optical configuration of the encoder エンコーダの光学系 Code plate Detection part LED ~2mm LED Lens Code plate Lens PDs Si lens holder Si lens holder Photodiode (PD) on Si plate (mm)
16 光検出部の製作結果 Silicon lens holder n + Photodiode array behind lens holder 2mm PD array With lens 300μm Al Electrode Alignment errors<±10mm PD array: 2x2x0.6mm, 3 x4 diodes
17 光源部の製作結果 Light source slits on Si top layer of SOI wafer Slit size 5μm wide 30μm long Images of slits through ball lens 300μm LED
18 測定したエンコーダ信号 Currents (na) 3 Ideal signal 2 1 Code pattern Displacement (mm) M-series: 12 bits, 13.6mm wide line
19 Fabricated MZI Actuator Coupler 5mm Movable waveguide Coupler Fixed waveguide
20 Optical 動作確認 measurement Opitcal image Infrared signal image Through port 1μm displacement at 31V Mechanical resonant frequency:197.8khz (Wide type),212.4khz (Narrow type) 1.5μm optical output modulation is observed Drop port
21 曲げモーメント駆動による 焦点可変ミラー
22 MEMS Deformable Mirrors G.Vdovin et al. JMM 9(1999) R8-R20
23 Varifocal mirrors Membrane mirror Tension Membrane Tension Outer electrode Inner electrode Outer electrode Plate mirror Distributed force is needed to obtain parabolic shape Moment Plate Ring electrode Ring electrode Ring electrode is effective to generate parabolic shape inside the ring electrode Support conditions affect the region of the parabolic shape
24 Deformable mirror by bending moment drive Moment
25 焦点可変ミラーの動作原理 Diplacement [μm] Circular mirror z r Fulcrum a Ring-shaped load distribution 有限要素解析 円板のたわみ曲線の微分方程式 ( 材料力学 ) P( r) : d 4 dr z d z 1 d z r dr r dr r Distributi on of たわみ曲線の近似解 z 2D M dz dr r P D 3 Eh load, Bendingstiffness: D ν νm E: Young s modulus h: mirror thickness ν: Poisson ratio r a r a parabola 3 1 ν Eh 平均誤差 0.49nm(RMS) - 放物面 - 解析形状 材料 : シリコン, 支持外部に分布荷重 支持 Position [μm] 支持
26 Fabricated circular varifocal mirror Si mirror side Glass side
27 Deformation by voltage Deviation form Parabola (nm) Height (μm) Height: 2.58μm Position (mm) Measured σ: 1.62nm Position (μm) Position (μm) Fitted parabola 27
28 焦点可変ミラーの動作
29 焦点可変ミラーを備えた光スキャナー
30 焦点可変と光走査機能を搭載した内視鏡 K. Aljasem et al., IEEE J. Microelectromech. Syst., 20, pp , 焦点位置 焦点可変と光走査は内視鏡用途で良い画像を得るために必要な機能であることが示されている 焦点位置 写真 ねぎの皮の OCT 画像
31 提案する焦点可変走査ミラーの構造 V s V f 面内方向応力 モーメントの作用 エッチングホール トーションバー 電極 1 焦点可変ミラー 焦点可変ミラー エッチングホール 金属配線 可動櫛歯 V f V f エッチングホール焦点可変ミラー静電引力対向電極支持フレーム 電極 2 静電引力焦点可変ミラーの断面図トーションバー 対向電極 焦点可変電圧 V f の印加によりミラー変形 支持フレーム 金属配線 可動櫛歯トーションバー 金属配線 電極 3 分解図 対向電極 固定櫛歯 SOI ウエハを使用電気的に 3 つに分割 上層 Si BOX(SiO 2 ) 層基板 Si 金属 V s V s 静電引力固定櫛歯可動櫛歯静電引力固定櫛歯 スキャナアクチュエータの断面図 スキャナ電圧 V s の印加によりミラー回転 スキャナと焦点可変ミラーの機能が集積されている 31
32 円形薄膜ミラーとカンチレバーの形状 12 メンブレン部分 400 Height [nm] mm Height [nm] 0 39 y position [mm] y position [ m m] y po x position [mm] 円形薄膜ミラーの形状 x position [ m m] カンチレバーの形状 0 0 0
33 応力による変形の計算 h m h f h s b u E m, E f, int E s R 拡張 Mirror local 0 折れ曲がり 回転 変形前 薄膜ミラー 変形後 薄膜ミラー断面図 Si SiO 2 Si フレーム Frame フレーム変形による薄膜ミラー支持条件変化 支持角度 増面内方向応力 増 u フレーム変形の計算結果拡張変形 b r R 2 h 1 hf E f int hme m b hf E f hs E s hme m b b 1 R 2 回転変形 f E f int h f E f a h h m m E E m m h a h s 2 m E フレーム寸法と面内方向応力の関係 s m h 2 s 6 m m 2M bh フレーム厚フレーム幅面内方向応力 大小小 小大大 33 h m s E R
34 薄膜ミラーの変形の実測と計算結果 Height [nm] Height [nm] 高さ [nm] Height [nm] 0.75 mm 1 mm 16 mm 50 mm Si SiO 2 Si 400 mm ミラー寸法 200.0E E E+0 0 フレーム Frame region 薄膜ミラー Mirror region 実測と計算形状がほぼ一致 E E E E E E-6 Position [mm] local 0 実測計算 Measurement Calculation E E E E E E E Position [mm] 位置 [mm] 測定結果 計算結果 フレーム回転角度 2.8 mrad 3.9 mrad ミラー支持部たわみ角 mrad 6.2 mrad ミラー面内方向応力 0 20 MPa 47 MPa
35 製作したデバイスの SEM 写真 金属配線 トーションバー 焦点可変ミラー 固定櫛歯 約 40 mm 可動櫛歯 対向電極 200mm エッチングホール 35
36 スキャナの駆動動画 36
37 ミラー機械回転角 Rotation angle [deg.] [ 度 ] スキャナの静特性 計算実測 Calculation Measurement Scanner voltage V s [V] スキャナ電圧 V s [V] スキャナ電圧 V s に対する回転角 Vの電圧印加でも電気的ショートや櫛歯のプルインが発生することなく26 度回転した
38 Height [m] 高さ [nm] Height [nm] 焦点可変ミラーの変形特性 E E E-9 V f = 0 [V] V f = 15 [V] V f = 30 [V] 近似放物線 Fitted parabola 測定値 Experimental data 000.0E E E-9 固定部 E E E E E E E E V f = 45 [V] V f = 50 [V] 0 Position [m] 位置 [mm] 各焦点可変電圧 V f における焦点可変ミラーの断面形状 300 電圧印加と共に徐々に凹面形状に変形した 座屈変形のような不安定な動作や 電気的なショートは観測されなかった 38
39 時間 [s] 時間 [s] 焦点と走査の同時駆動実験 CCD カメラ 0 0 回転角 [ 度 ] 5 集光前のレーザースポット ビームスプリッタ レンズ He-Ne レーザー = 632.8nm 焦点可変スキャナミラー レーザースポット像測定に用いた光学系 (a) 焦点可変電圧 V f 無し 集光後のレーザースポット スキャナと焦点可変ミラーの駆動によりレーザー光走査と集光を同時にできることを確認した 0.6 (b) 焦点可変電圧 V f 有り スキャナと焦点可変ミラーの同時駆動時のビーム走査像 39
40 波面補償デフォーマブルミラーの製作
41 Introduction MEMS-DM Development- Single Membrane laminate Membrane Segmented OKO Boston Micromachines Iris AO Element count<100 Stroke>10μm(center) Small stroke at edge Element count not enough Element count<4096 Stroke not enough (<5μm) Element count>100 Stroke>10um Diffraction occurs at the pitch between the segmented mirrors The stroke of the electrostatic actuated DM is usually limited by the air gap between the electrodes and the mirror membrane. Air gap is usually generated by 1. Surface micromachining( sacrificial layer deposition etching) cannot generate a big vertical gap which is limited by the thickness of the sacrificial layer. 2. Wafer bonding process can generate a large air gap by bond a mirror membrane to a micro-post array. 41
42 MEMS-DM Main design - We propose a new structure membrane MEMS-DM by combining wafer bonding process and Si/HfO2 Bimorph spring array 1. HfO2 crystallization-induced stress is used to introduce large air gap. 2. Relatively soft spring structure (small spring constant) instead of fixed posts is used to increase the stroke. 3. High optical quality mirror surface is guaranteed by the top layer of SOI wafer and the wafer bonding process. High-stroke MEMS-DM Structure 42
43 43 MEMS-DM Design - 3. design overview Electrode array 3.4mm 3.4mm Mirror Membrane Electrode array Electrode 500μm 100μm
44 44 MEMS-DM Design - 1.The dimension of bimorph spring for MEMS-DM Target stroke: 20μm For the Parallel-plate actuator, it is Length (μm) Deflection before crystallization (μm) Deflection After Crystallization (μm) Film stress of the crystallize d HfO Gpa demonstrated that range of motion is limited to less than one third of the initial gap Initial gap>60μm Out-of plane Deflection calculated to be : δ= 48.7μm Electrode gap = δ+ 10μm= 58.7μm
45 45 MEMS-DM Fabrication flow:bonding and Release (3-a) Plasma activated bonding (3-d)SiO2 Dry Etching (CHF3) (3-b) Actuator chip handle layer etching (3-e) SiO2 Dry Etching (CHF3) (3-c) Mirror chip handle layer etching (3-f) Annealing (HfO2 crystalliztion) Si SiO2 HfO2
46 MEMS-DM Actuator chip- Actuator Fabrication: Microphotos & SEM Images 46
47 47 MEMS-DM Si/HfO2 Bimorph spring HfO2 Si Fabricated bimorph spring 結晶化させる前 t1=0.2μm t2=1.0μm 結晶化させた後 200μm Microscope image 密着性がよい
48 MEMS-DM Static Deflection Measurement 駆動する所 電極面積 500μm 500μm 測定したミラーエリア 900μm 670μm fabricated Deformable mirror mirror edge sticked to the substrate bimorph spring array 48
49 MEMS-DM Au-Si eutectic bonding with alignment Because the plasma activated bonding requires extremely strict conditions(<2nm surface roughness, high surface cleanliness), another stable bonding process is investigated for the fabrication of MEMS-DM. Mirror chip Bonding pad: Ti/Au, Ti: 50nm, Au: 200nm; Ti is used to react with the native oxide layer on the bare Si surface which will result in the poor bond quality of the Au/Si bonding structure. Actuator chip Au/Ti bonding pad Actuator chip Mirror chip 49
50 MEMS-DM IR micrograph Bonding condition Temperature: 400 Time: 30min Pressure: 1.7 MPa (EVG bonder: 0.4MPa) 3.4mm 3.4mm continuous mirror Bonding point Bonding point 50
51 まとめ 1. 光 MEMS の紹介 マイクロミラー 可変格子 集積型センサ Si 導波路干渉計 2. 焦点可変デフォーマブルミラーの製作 曲げモーメント駆動による焦点可変ミラー 焦点可変ミラーを備えた光スキャナー 波面補償デフォーマブルミラーの製作
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