Research & Development

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1 Research & Development Each company of the Sumitomo Electric Group combines its unsurpassed creativity with knowledge and experience to generate dynamics that allows the group to contribute to society.

2 Advanced Automotive Systems R&D Center ITS DCDC ECU HEV EVPHEV TCU: Telematics Communication Unit R1 OCV SOC SOC 02 03

3 Power Systems R&D Center POWER DEPO semsa (CPV) 2 CPV CPV Wi-SUN Wi-Fi ZigBee 制御 semsa -home OpenADR ECHONETLite semsa semsa A 4mm150m NMRMRI (Max. 16ch / slave) PCS (DC6001kV) PLC PLC IoT 04 05

4 Information Network R&D Center 10G-EPON 1GbpsEPON (5G) IoT 5G 10G-EPON 10Gbps 10G-EPON* 1Gbps 10G-EPON 10 G-EPON Gigabit Ethernet Passive Optical Network NW NW NW IoT 8K CATV (10Gbps) 8K2020 8K 06 07

5 IoT R&D Center Cyber-security R&D Office IoTSEI AI IoT(Internet of Things) IoT / / AI / / PC AI IoT AI ECU ECU ECU ECU CU ECU: Electronic Control Unit TCU: Telematics Communication Unit 08 09

6 Analysis Technology Research Center SPring-8CAE Computer Aided Engineering XCT 1m IC 3 1m Lenovo NeXtScale System M5 CPU 912 [39TFLOPS] IntelXeon(Broadwell) (512GB ) 64 SMP(GPGPU ) 80 MPI [50TFLOPS] CAE CAE Lenovo NeXtScaleLenovo Intel XeonIntel Corporation EDX 入射電子 STEM EB-G /5 CAE X (HAADF) 0.1nm JEOL JEM-2100F/Cs [ 200kV] STEM Scanning Transmission Electron Microscope 2m 2m Open Turn Display Keyboard Micro Structure Analysis (FEM) Harness Conductor Insulator Shield Master Curve Lite Strain Jacket 0.3 mm 1. Motion Analysis (FEM) 2. Strain Calculation 3. Fatigue Analysis 10 11

7 Advanced Materials Laboratory [ ] TM * TM 12 13

8 Energy and Electronics Materials Laboratory HV PC Ag Cu Ni TV 50nm 300nm Ag Cu FPC HDD 5m MgSiC 14 15

9 Optical Communications Laboratory 1 (MCF) 7 4 *1) 4 *2) 1.31μm 8 *3) 1) 2) 3) Z-Plus Fiber 150 VAD1970 伝送損失 [db/km] トップデータ World record 新記録 New record db/km 年 db/km( 1560 nm) スイッチ サーバ 記憶装置 ルータ 終端装置 4-fiber ribbon part 2-fiber ribbon part MPO 16 17

10 Transmission Devices Laboratory 2-inch HEMT IC 2 GaN GaAs LAN ( DWDM Blu-ray Blu-ray Disc Association YAG OSAIC 100Gbit/s25Gbit/s/ 400Gbit/s Gbit/s/ 10mm 10Gbit/s 100μm 4 100Gbit/s (GaAs) HEMT* 1 (GaN) (LTE) (5G) HEMTMMIC* 2 11 IC OSA 10Tbit/s GaN HEMT FET W-CDMA WiMax LTE HEMT FET MMIC MMIC /MMIC / MMIC GHz 1 High Electron Mobility Transistor 2 Monolithic Microwave Integrated Circuit 18 19

11 Power Device Development Division 3 (Red)(Green)(Blue) SiC (MPZ *1 ) RGB mw ma mw ma mw ma MPZ: Multi-Parameter and Zone controlled SiC Growth Technology MPZ CVD () MPZ 99% EpiEra SiC GaN V-- (VMOS [μm] ,4: 2,3,6: 5: QCL μm I D VDS SiC FET *2 ) 1200A/ (EV/HEV) SiC 2 VMOSFET: V-groove Trench Metal Oxide Semiconductor Field Effect Transistor 20 21

12 Frontier Technologies Laboratory Overseas operations Agri-Science Department Innovation Core SEI, Inc. (ICS) R&D ICS R&D EV R&D Planning & Administration Division RF CPV IoT 4.0 China Analysis Technology Center Sumitomo Electric Interconnect Products (Suzhou) Ltd. (SESZ)

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