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1 2013 年 9 月 20 日日本物理学会 2013 高知大学 素粒子物理国際研究センター内山雄祐西村美紀, 大谷航 Matteo De Gerone 他, MEG collaborators
2 Search for lepton-flavor-violating μ eγ decay Forbidden in SM But enhanced in many BSM MEG experiment Searching for μ eγ down to O(10-13 ) Completed data-taking Aug.2013 Analysis for final result ongoing Upgrade Push down to O(10-14 ) Approved by PSI, R&D progress To start DAQ in pSE5 岩本 Signature Required to suppress accidental BG 52.8MeV (=M μ /2) 52.8MeV(=M μ /2)
3 全体像 MEG Upgrade Proposal (
4 液体キセノンガンマ線検出器 BG同定検出器 新たに導入を検討 GSO+プラシン ファイバー 陽電子時間測定器 ガンマ線入射面をPMTから MPPCに置き換える 真空紫外光に有感 大型 電荷測定 時間測定 4000ch 高速プラスチックシンチレータ読み出し 近紫外光 高精度時間測定 500 counters 2ch (3000 SiPMs)
5 BC422 6x3x0.5 cm 3 3M mirror film SiPM Saint-Gobain BC422 ( mm 3 ) Achieved excellent resolution of 43 ps( ) at relatively high over-voltage Observed deterioration at further over-voltage Increase of dark noise, after pulsing
6 3 SiPM in series connection Waveform digitizer Thermal chamber Shaping amplifier Scintillator:BC422, 60x30x5mm 3 Sensor:3x3mm 2, 50μm-pixel SiPMs Reference counter:bc422, 5x5x5mm 3, 1 MPPC for trigger & collimation 90 Sr β-source (<2.28MeV) Amplification & shaping (pole-zero cancellation) High speed sampling with waveform digitizer USB PC DRS Input (4ch)
7 Further study to understand the timing resolution of plastic scintillation counter from SiPM properties Detail comparison of different type of SiPMs Recently, many manufacturers produce blue-sensitive SiPMs with p-on-n structure New MPPCs from Hamamatsu New standard MPPC New trench MPPC T.Nagano et.al, IEEE NSS/MIC 2012 HPK has recently developed new technologies After pulse suppression Trench for cross-talk suppression Metal quench resistor High fill factor for small pixel Etc. IEEE NSS/MIC 2012, VCI 2013 Id:180 Pursue ultimate timing performance of general scintillation counter
8
9 Manufacturer Model number Type HPK S C Conventional MPPC (Old) S P Ceramic package Surface mount S C(X) S C(X) S C(X) 3X3MM50UMLCT-B New MPPC (Standard) Trench-type MPPC 25μm pixel Improved fill factor AdvanSiD NUV type KETEK PM3350 prototype A Trench type SensL MicroFB SMT B-series with fast MicroFB SMT output 35μm pixel Common features: 3 3 mm 2 dimension, p-on-n structure
10 @23 Trench MPPC New MPPC 50μm 25μm 8 V 4 V Old MPPC 2 V Much wider operational range. Breakdown voltages are lower by 5 V (standard), 15V (trench)
11 Old MPPC (S C) 20 ns After shaping New MPPC (S C(X)) Trench MPPC (S C(X)) Average waveform Confirmed less after-pulsing
12 Dark measurement Random trigger Photo-electron counting capability Large improvement in the separation Over-voltage ~2.0 V 0pe 1pe 2pe Charge (10 9 e) Over-voltage ~2.5 V アフターパルスにより連続的な分布に Old MPPC New MPPC
13 @23 SensL New Old AdvanSiD KETEK Old MPPCs New MPPCs Kept controlled up to high V over due to the after-pulse suppression
14 @23 Standard SiPMs Trench SiPMs Cross-talk Probability # 2pe # 1pe
15 Standard NEW MPPC 1pe 2pe 5pe V over =1.5V Cross talk increases at high bias Very long tail in charge distribution Cross-talk process runaway Big impact on energy measurement (excess noise factor) Impact on time measurement? arxiv: pe 2pe 10pe V over =4.0V 100pe Saturation of electronics Charge (10 9 e)
16 (Photo Detection Efficiency) New50um 25um Trench Old SensL AdvanSiD KETEK Measure relative PDE using UV-LED (~ scinti. Light) Calculate PDE from 0 p.e. probability LED (~390nm) Extended PDE at higher V over for new MPPCs Recovered fill factor for smaller pixel (25um) Trench-type MPPC also shows good PDE due to relatively high fill factor (55%, ~10% lower than standard type) Scintillator spectrum
17 Old New50um 25um SensL Trench AdvanSiD KETEK Measure relative PDE using UV-LED (~ scinti. Light) Calculate PDE from 0 p.e. probability LED (~365nm) Extended PDE at higher V over for new MPPCs Recovered fill factor for smaller pixel (25um) Trench-type MPPC also shows lower PDE for short wavelength (?) Scintillator spectrum
18 New50um 25umTrench New50um 25um Old SensL Old SensL AdvanSiD KETEK Trench AdvanSiDKETEK LED (~390nm) LED (~365nm) *Relative scales for the two plots are not same HPK MPPCs show higher PDE for near-uv Extended PDE at higher V over for new MPPCs Recovered fill factor for smaller pixel (25um) Trench-type MPPC also shows good PDE due to relatively high fill factor (55%, ~10% lower than standard type). But PDE is suppressed at shorter wave length (?)
19
20 直列につないだ3つのセンサーを1チャンネルで読み出す 実効的に大面積化 検出光量の増加で分解能をあげる 両端に3 倍のバイアス電圧を供給 共通電流で個々のセンサーにかかる電圧が調整される Over-voltageが自動的に大体そろう 直列接続でキャパシタンス減少 シャープな波形 ゲイン減少 (~40%) Over-voltage ~3.8 V /MPPC
21 BC422 6x3x0.5 cm 3 No wrapping Trench Old New New (25μm) Almost same resolution attained at each optimal bias. (No major improvement) Trench-type shows slightly poorer resolution
22 Trench New New (25μm) Old Observe softening of waveform as V over for standard new MPPC Slower pulse shape for Trench MPPC This sample is not the final version. HPK is trying to improve this
23 t Counter t ref Old New New (25μm) Faster charge collection by higher E-field Trench!? Pulse time by Constant-Fraction method As a consequence of softened pulse shape, time measurement drifts for applied bias Larger temperature dependence of time measurement Old New New 25um Trench 2.5 ps/ 5.5 ps/ 2.8 ps/ 0.1 ps/
24 30 C 20 C 40 C Old MPPC (S C) New MPPC (S C(X)) 20 C 25 C 30 C バイアス一定の場合の時間測定 (mean) の温度依存性 高バイアス下での時間のドリフト ( 波形のなまり ) により新型では温度依存性が大きくなってしまった (5 度の変温度変化の寄与 ( 一様分布仮定 ) 化で ~30ps) Bias voltage (V) (Over C) 30 30/ 12 = 31.2 ps 検出器の分解能 ( 最終目標値 ) Bias voltage (V) (Over C) 問題となるレベルではない
25 30 C 25 C 20 C MPPC attained 20 C 25 C 30 C Stable! Bias voltage (V) (Over C) ps poorer resolution Good stability for wide bias range No more care for temperature Bias voltage (V) (Over C) Breakdown coefficient AdvanSiD: 24 mv/ KETEK: 16 mv/ MPPC Old: 49 mv/ MPPC New:59 mv/
26 New MPPC after pulse の大幅削減, 動作領域の拡大 パルス後の安定性向上 高計数率下測定で有効 Trench-type, 加えて cross talk 抑制 Small pixel でも fill factor 改善で同等の PDE 時間測定の温度依存性 New MPPC で悪化 Trench-type では KETEK, AdvanSiD 同様安定 シンチレータ時間分解能 p.e. statistics がドミナント PDE が重要 近紫外光で高い PDE を有する浜松 MPPC で高分解能 New MPPC では到達分解能に大幅な改善は見られない
27 After pulse, noise Cross talk PDE Bias, Temp. stability Time resolution Old MPPC New MPPC (Standard) New MPPC (25um) New Trench MPPC AdvanSiD NUV KETEK 時間分解能追求なら Standard MPPC (50 or 25 μm pixel) 総合性能なら Trench MPPC Good
![Fast scintillators from Saint-Gobain properties BC418 BC420 BC422 BC404 Light Output [% Anthracene] 67 64 55 68 Rise Time [ns] 0.5 0.5 0.35 0.7 Decay Time [ns] 1.4 1.5 1.6 1.](/docs-images/85/92503416/images/28-1.jpg "8 Wavelength [nm] 391 391 370 408 Attenuation Length [cm] 100 110 8 140 Used in the beam test Used in this study (Best ) Present MEG timing counter Faster scintillator gives higher time resolution P.")
28 Fast scintillators from Saint-Gobain properties BC418 BC420 BC422 BC404 Light Output [% Anthracene] Rise Time [ns] Decay Time [ns] Wavelength [nm] Attenuation Length [cm] Used in the beam test Used in this study (Best ) Present MEG timing counter Faster scintillator gives higher time resolution P.e. at the earliest part are only effective Scintillation with fast response given in near-uv light
29 New Standard, 4V New Trench, 4V New Trench, 9V Trench 型で大幅な波形のなまりを観測
30 40 C Old MPPC (S C) 25 C New MPPC (S C(X)) 30 C 30 C 20 C 20 C Bias voltage (V) (Over C) Bias voltage (V) (Over C) バイアス一定の場合の分解能の温度依存性 レファレンスカウンタは各温度で Over-voltage をそろえてある 新型では高バイアスをかけることで 到達分解能は安定に得られる
31 40 C Old MPPC (S C) 25 C New MPPC (S C(X)) 30 C 20 C 20 C 30 C Over voltage 一定での分解能温度依存性 新型 ( 旧型 )60mV/ C(55mV/ C) の温度係数を仮定して補正
32 30 C 40 C 20 C Old MPPC (S C) New MPPC (S C(X)) 25 C 20 C 30 C Bias voltage (Over C) (V) Bias voltage (Over C) (V) Over voltage 一定での時間測定温度依存性 新型 ( 旧型 )60mV/ C(55mV/ C) の温度係数を仮定して補正 もし温度変化をバイアスコントロールでアクティブに補正できれば影響を最小限にできる
33 Old MPPC (S C) New MPPC (S C(X)) 降伏電圧の温度依存性 Old:49 mv/ New:59 mv/ 参考 : AdvanSiD センサー :24 mv/ KETEK センサー :16 mv/ ( どちらも p-on-n, blue sensitive type)
34 MPPC バイアス電圧 入力段減衰 150 MPPC アンプ ポールゼロ消去 アンプ 出力
35 Pole-zero cancellation potentiometer 0 Ω (attenuated by 2) 200 Ω For precise time measurement Restore baseline by pole-zero cancellation, and Extract fast risepart 1000 Ω t rise ~1.7 ns Signal from scintillator (3MPPC in series connection) 0 (nsec)
36 Old V over =2.4V P crosstalk =60% New V over =2.5V P crosstalk =50% New V over =4.2V P crosstalk =70% Trench V over =8V P crosstalk =35%
37 数光子ピークからゲインの見積もり バイアス依存性 線形性はかねがねよい 高バイアスでずれ? 同じ over-voltage ではゲインは従来型より低い New Total gain includes amp, splitter, offline shaping.
Introduction MPPC is new semiconductor photon sensor Technology is very similar to SiPM. Under development by Hamamatsu Photonics (HPK) MPPC have not
Multi Pixel Photon Counter T. Nakadaira KEK Introduction MPPC is new semiconductor photon sensor Technology is very similar to SiPM. Under development by Hamamatsu Photonics (HPK) MPPC have not been listed
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