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1 Si a) Si Photonic Wire Waveguides Toshihiko BABA a), Atsushi SAKAI, Tatsuhiko FUKAZAWA,andFumiakiOHNO Si 0.5 µm Si µm µm 0.3 db H Si SOI 1. mm cm 1 100cm 2 µm 1mm 2 n 1 n 2 (n 2 1 n2 2 )/2n2 1 HIC High Index Contrast % HIC 10% Graduate School of Engineering, Yokohama National University, Yokohama-shi, Japan a) baba@ynu.ac.jp HIC 1992 Mc- Call [1] µm 1995 Zhang µm Photonic Wire [2] 1997 Foresi LSI Silicon-On-Insulator SOI Si [3] Si Si HIC HIC Si Foresi 1998 Little Si [4] 2001 Sakai [5] [6] [9] [10] [11],[12] [13] C Vol. J88 C No. 6 pp c
2 2005/6 Vol. J88 CNo.6 [14],[15] H [16],[17] [18] [19]AWG [20] Si µm SOI Si Si-LSI CMOS LSI LSI 2. 3D-FDTD H 7. AWG 2. 1(a) FDTD SOI Si SiO 2 SOI 2 Si Si SiO µm 1.0 µm λ 1.55 µm TE TE TE TM 140 nm0.06 fs w n eq n eq n g ( n eq + ω n eq / ω) 1(b),(c) SOI w 0.5 µm 0.38 µm n eq n eq Si SiO 2 1 FDTD (a) SOI (b) SOI w n eq (c) w=0.5 µm SOI n eq n g Fig. 1 FDTD analysis of straight waveguide. (a) Calculation model of SOI-type waveguide. (b) Modal equivalent index n eq of SOI-type and airbridgetype waveguides calculated as a function of core width w. (c) Dispersion characteristics of equivalent index n eq and group index n g of fundamentalmodeinsoi-typewaveguidewith w=0.5 µm. 364
3 Si n eq n g Si SOI SOI TECH Si SiO 2 ZEP520 Si Ni Cr CF 4 /Xe Si SiO 2 Si Si SOI SiO 2 HF TE TM µm 2π 2 2 w 0.47 µm SOI (a) SEM (b) Fig. 2 Fabricated SOI-type straight waveguide with w 0.47 µm. (a) Scanning electron micrograph of the waveguide. (b) Near field pattern at cleaved output end. 3 w 0.7 µm SOI Fig. 3 Example of measured transmission spectrum for SOI-type straight waveguide with w 0.7 µm. Observed oscillation shows Fabry-Perot resonance between input and output ends. 3 TE 42% 3 11 db/mm nm 365
4 2005/6 Vol. J88 CNo.6 3nm 1dB/mm 3 n g 1(c) 3. r 4 r r >2.5 µm TE TM 0.1 db db TE TM 4 TE r >1.8 µm TM TE 1dB 5 µm TE TM b b= db 30 db db 4 w 0.50 µm SOI (a) r (b) r Fig. 4 Calculated and measured bend characteristics of SOI-type waveguide with w 0.5 µm. (a) Bend loss versus bend radius r. Plots and solid line denote experimental results and dashed and dotted lines calculated results. (b) Polarization crosstalk versus bend radius r. Plots denote experimental results and solid and dashed lines calculated results. 30 db µm db 180 U 35 db 90 S 22 db 366
![length g. 4. 1 2 Si FDTD [21] 2 3dB 5 r g g 6 g =0.6 µm 0.2 db g g =0.8 µm 7 w 0.](/docs-images/94/118981180/images/5-2.jpg "47 µm SOI (a) (b) Fig. 7 SEM view of fabricated branch in SOI-type waveguide with w 0.")
5 Si 5 w=0.44 µm SOI H z Fig. 5 Calculation model of bend-waveguide-type branch based on SOI-type waveguide with w=0.44 µm and calculated profile of vertical magnetic field (H z ) of guided mode. 6 Fig. 6 g Calculated curve and experimental plots of excess loss in bend-waveguide-type branch with length g Si FDTD [21] 2 3dB 5 r g g 6 g =0.6 µm 0.2 db g g =0.8 µm 7 w 0.47 µm SOI (a) (b) Fig. 7 SEM view of fabricated branch in SOI-type waveguide with w 0.47 µm (a) and near field pattern of light output (b). 7 r=2.75 µm g 6 g =0.4 µm 0.2 db g 5. / Si 367
![(a) Simple intersection. (b) Type-I elliptical intersection. Si Si FDTD 0.2 db [21] 1.](/docs-images/94/118981180/images/6-1.jpg "55 µm 10 20 nm / [22] Si 8(a) 1.4 db 9.2 db [23] CAD 1 / I 8(b) 1.5 µm 7.2 µm 1.51 1.57 µm (b) 9 w 0.")
6 2005/6 Vol. J88 CNo.6 (a) 8 w=0.44 µm SOI TE H z (a) (b) I Fig. 8 Calculated H z field of TE-polarized mode at intersection of waveguides with w=0.44 µm. (a) Simple intersection. (b) Type-I elliptical intersection. Si Si FDTD 0.2 db [21] 1.55 µm nm / [22] Si 8(a) 1.4 db 9.2 db [23] CAD 1 / I 8(b) 1.5 µm 7.2 µm µm (b) 9 w 0.45 µm (a) (b) I Fig. 9 Pictures (upper) and near field pattern of guided light (lower) in airbridge-type waveguide with w 0.45 µm. (a) Simple intersection. (b) Type-I elliptical intersection. 0.1 db 30 db 1.6 µm 10.4 µm 4 II 0.4 db SOI 9 I I SOI a 1 10 a=7.2 µm 0.1 db 25 db 368
7 Si 10 Fig. 10 Theoretical curves and experimental plots of insertion loss at elliptical intersection with long axis. II 1.2 db II 11 H (a) 1.55 µm (b) Fig. 11 SEM view of H-tree circuit (a) and NFP of light output at λ=1.55 µm (b) H Si-LSI LSI H mm 2 [24] Si 4. 11(a) 35 µm 25 µm 8 H 7 3 r=2.75 µm g =0.8 µm 5 µm 1.55 µm TM 11(b) H Fig. 12 Transmission spectra for eight output ports in fabricated H-tree circuit. 9dB dB 2dB 369
8 2005/6 Vol. J88 CNo.6 7. (AWG) 13 (a) (b) Fig. 13 SEM view (a) and transmission spectrum (b) of fabricated Mach-Zehnder interferometer dB Si 2 10 nm r=3 µm 28.7 µm 13(a) 1dB 13(b) 20 db FSR 16 nm 4.6 AWG AWG AWG cm 2 [25] InP AWG [26] / HIC µm mm 2 AWG µm 20 Si AWG Si AWG Si AWG (100 µm) µm AWG µm AWG 14(a) µm 93 µm 3.5 µm 1.5 µm 1.5 µm 0.8 µm 370
![Phys. Lett., vol.60, no.3, pp.289 291, Jan. 1992. [2] J.P.Zhang,D.Chu,S.Wu,S.Ho,W.Bi,C.Tu,andR. Tiberio, Photonic-wire laser, Phys. Rev. Lett., vol.75, no.14, pp.2678 2681, Oct.](/docs-images/94/118981180/images/9-1.jpg "1995. [3] J. Foresi, P. Villeneuve, J. Ferrara, E. Thoen, G. Steinmeyer, S. Fan, J. Joannopoulos, L. Kimerling, H. Smith, and E.")
9 Si AWG (a) (b) Fig. 14 SEM view (a) and transmission spectrum (b) of fabricated AWG. 10 nm TE 14(b) 17 3nm 6nm 5dB FSR 90 nm µm Si TE 1.8 µm TM 0.3 db / 0.1 db H H 2dB 8 20 db AWG (100 µm) 2 6nm FSR 90 nm Si FDTD 10 nm IT 21 COE [1] S.L.McCall,A.F.J.Levi,R.E.Slusher,S.J.Pearton, and R. A. Logan, Whispering gallery mode microdisk lasers, Appl. Phys. Lett., vol.60, no.3, pp , Jan [2] J.P.Zhang,D.Chu,S.Wu,S.Ho,W.Bi,C.Tu,andR. Tiberio, Photonic-wire laser, Phys. Rev. Lett., vol.75, no.14, pp , Oct [3] J. Foresi, P. Villeneuve, J. Ferrara, E. Thoen, G. Steinmeyer, S. Fan, J. Joannopoulos, L. Kimerling, H. Smith, and E. Ippen, Photonic bandgap microcavities in optical 371
10 2005/6 Vol. J88 CNo.6 waveguides, Nature, vol.390, no.13, pp , Nov [4] B. E. Little, J. S. Foresi, G. Steinmeyer, E. R. Thoen, S. T.Chu,H.A.Haus,E.P.Ippen,L.C.Kimeling,andW. Greene, Ultra-compact Si-SiO 2 microring resonator optical channel dropping filters, IEEE Photonics Technol. Lett., vol.10, no.4, pp , April [5] A. Sakai, G. Hara, and T. Baba, Propagation characteristics of ultrahigh optical waveguide on silicon-oninsulator substrate, Jpn. J. Appl. Phys. 2, Lett., vol.40, no.4b, pp.l383 L385, April [6] K. K. Lee, D. R. Lim, H-C Luan, A. Agarwal, J. Foresi, and L. C. Kimerling, Effect of size and roughness on light transmission in a Si/SiO 2 waveguide: Experiments and model, Appl. Phys. Lett., vol.77, no.11, pp , Sept [7] K. K. Lee, D. R. Lim, L. C. Kimerling, J. Shin, and F. Cerrina, Fabrication of ultralow-loss Si/SiO 2 waveguides by roughness reduction, Opt. Lett., vol.26, no.23, pp , Dec [8] Y. A. Vlasov and S. J. McNab, Losses in single-mode silicon-on-insulator strip waveguides and bends, Opt. Express, vol.12, no.8, pp , April [9] W. Bogaerts, R. Baets, P. Dumon, V. Wiaux, S. Beckx, D. Taillaert, B. Luyssaert, J. Van Campenhout, P. Bienstman, and D. Van Thourhout, Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology, J. Lightwave Technol., vol.23, no.1, pp , Jan [10] A. Sakai, T. Fukazawa, and T. Baba, Estimation of polarization crosstalk at a micro-bend in Si photonic wire waveguide, J. Lightwave Technol., vol.22, no.2, pp , Feb [11] R. U. Ahmad, F. Pizzuto, G. S. Camarda, R. L. Espinola, H. Rao, and R. M. Osgood, Ultracompact corner-mirrors and T-branches in silicon-on-insulator, IEEE Photonics Technol. Lett., vol.14, no.1, pp.65 67, Jan [12] A. Sakai, T. Fukazawa, and T. Baba, Low loss ultrasmall branches in a silicon photonic wire waveguide, IEICE Trans. Electron., vol.e85-c, no.4, pp , April [13] T. Fukazawa, T. Hirano, F. Ohno, and T. Baba, Low loss intersection of Si photonic wire waveguides, Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes, vol.43, no.2, pp , Feb [14] T. Shoji, T. Tsuchizawa, T. Watanabe, K. Yamada, and H. Morita, Low loss mode size converter from 0.3 µm square Si wire waveguides to singlemode fibers, Electron. Lett., vol.38, pp , [15] V. R. Almeida, R. P. Panepucchi, and M. Lipson, Nanotaper for compact mode conversion, Opt. Lett., vol.28, no.15, pp , Aug [16] T. Fukazawa, A. Sakai, and T. Baba, H-tree-type optical clock signal distribution circuit using a Si photonic wire waveguide, Jpn. J. Appl. Phys. 2, Lett., vol.41, no.12b, pp.l1461 L1463, Dec [17] L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J. L. Cercus, A. Koster, J. M. Fédéli, and M. Heitzman, Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides, Appl. Phys. Lett., vol.85, no.5, pp , Aug [18] T. Fukazawa, F. Ohno, and T. Baba, Si photonic wire components and micro-filters on SOI substrate, SPIE Physics and Simulation of Optoelectronic Devices XII, no , Jan [19] K. Yamada, T. Shoji, T. Tsuchizawa, T. Watanabe, J. Takahashi, and S. Itabashi, Silicon-wire-based ultrasmall lattice filters with wide free spectral range, Opt. Lett., vol.28, no.18, pp , Sept [20] T. Fukazawa, F. Ohno, and T. Baba, Very compact arrayed-waveguide-grating demultiplexer using Si photonic wire waveguides, Jpn. J. Appl. Phys. 2, Lett., vol.43, no.5b, pp.l673 L675, May [21] C. Manolatou, S. G. Johonson, S. Fan, P. R. Villeneuve, H. A. Haus, and J. D. Joannopoulos, High-density integrated optics, J. Lightwave Technol., vol.17, no.9, pp , Sept [22],,, 2002, C-3-851, March [23] W. K. Burns, A. F. Milton, and A. B. Lee, Optical waveguide parabolic coupling horns, Appl. Phys. Lett., vol.30, no.1, pp.28 30, Jan [24] L. Wu, B. Bihari, J. Gan, and R. T. Chen, Fabrication and characterization of a 1-to-48 fanout H-tree structure for clock signal distribution system, Proc. Topical Meet. Integrated Photon. Res., vol.4, pp , July [25] M. Ishii, Y. Hibino, Y. Hida, A. Kaneko, M. Itoh, T. Goh, A. Sugita, T. Saida, A. Himeno, and Y. Ohmori, Low-loss and compact silica-based 16 channel arrayed waveguide grating multiplexer module with higher index difference, Proc. European Conf. Opt. Commun., vol.3, pp.27 28, Sept [26] M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, Y. Yoshikuni, and Y. Shibata, InP-based 64-channel arrayed waveguide grating with 50 GHz channel spacing and up to 20 db crosstalk, Electron. Lett., vol.33, no.21, pp , Oct
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