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1 S/N S/N CCDCMOS CCD CMOS & & & Hirofumi SUMI, Non - Member and Tadakuni NARABU, Member and Shinichiro SAITO Non - Member (Sony Corporation Consumer Products & Devices Group, Atsugi-shi, Japan). Fundamentals Review Vol.3 No.3 pp CCD CMOS CMOS CCDCMOS CMOS CCD CMOS CMOSCCD PD FD CCD CDSCorrelated Double Sampling A-DADCLSI CMOS CMOSCMOS LSI CCD CMOS 44 Fundamentals Review Vol.3 No.3
2 PDpin Si 1 1 CMOS RTS Random Telegraph Signal 2,3 Si 1/f RTS 1RTS RTS CCDLSI (Arbitrary Unit) CMOS CCDCMOS 2CMOS CMOS F 4,5 6 () I: Tu,s :, Td,p Fundamentals Review Vol.3 No.3 45
3 3 CMOS 7,8 LSI 60f/sframe per second 81, f/s CCD , ,200f/sCMOS f/s 100f/sCCDCCD CMOS CMOS CMOS 360Mpixel/s 1 360MHz A-D CMOS LSILVDSLow Voltage Differential Signaling64060f/s CMOSLVDS 432Mbit/s216MHz A-D 64060f/sCMOS A-DA-D f/s 46 Fundamentals Review Vol.3 No.3
4 ディジタル CDS 9,10 A-D A-D CDSCDS CDS A-D A-D34 CMOS 5 CMOS IMX017CQE f/s CMOS300f/s 6CMOS 640 S/N 60f/s DSP 60f/s SN Fundamentals Review Vol.3 No.3 47
5 7 CMOS CMOS Mbit/s64060f/s 22SD 33300f/s1/ f/sCMOS CMOS CMOS CMOS 11,12 CMOS CMOS 1 CMOS mCMOS SN SN 81.75m5M pixelcmos 2CMOS 8 9CMOS 13 SN 48 Fundamentals Review Vol.3 No.3
6 Photo Diode DAC + 1/21,000lxSN -Scanner V FD Dout Pixel Array 20dB CK DAC PLL Comp SCU Column ADC Counter data Bus 10 Sens 10 lx,lx CK4X 192MHz SNR=20LogS/N H-Shift Register 1 ISO12232 ISO ,15 CMOS SmVNmV SN 2 10 F5.61/ mCMOS /2 10SNSignal Noise Ratio 11SN SN 12S FPNRN FFnn F S FPN RN 2 S FPN 1 K k n1 F(n) 3 RN F 1 K k n1 F(n) F Fundamentals Review Vol.3 No.3 49
7 13 k 1/k 4FRN 4RN 1/ F1F2 14 RN 2RN F(1) F(2) 5 56 RN 1 (F(1) F(2)) /2 = + + (F) (S) (FPN) n =2 n=3 n =1 n =k (RN ) F(1) CMOS 1.75m1.75m2.5m2.5m CMOS A-D LVDS CMOS 16 - CMOS CMOS F(2) n=2 n=3 F(1) n=1 1 HAD CMOS vol.24, no27, pp.1-4, March S. Sugawa, et. al., Statistical analyses of random telegraph signals in the transistors equivalent to pixel source followers using a large-scale array TEG, ITE Technical Report, vol.32, no.19, IST , CE pp.9-12, Oct D. Zhang, et. al., A Modeling and Evaluation of the Random Telegraph Signal Noise on a CMOS Image Sensor in Motion Pictures IISW 2009, 05-P13, June ,, 42, no.4, pp.35-43, Jan T. Narabu, How the innovation of Image Sensor technology changed the performance and function of Cameras, 17th Annual AIA Business Conference, Feb , CMOS,, F(2) 50 Fundamentals Review Vol.3 No.3
8 vol.63, no.3, pp , March S. Yoshihara, et. al, A 1/1.8-inch 6.4MPixel 60 frames/s CMOS image sensor with seamless mode change, ISSCC Dig.Tech.Papers, pp , San Francisco, USA, Feb S. Yoshihara, et.al., Inch 6.4 MPixel 60 frames/s CMOS image sensor with seamless mode change, IEEE J. Solid-State Circuits, vol.41, no.12, pp , Dec Y. Nitta, et. al., ed Digital double sampling with analog CDS on column ADC architecture for low-noise active pixel sensor, ISSCC Dig. Tech. Papers, pp , San Francisco, USA, Feb ,, 2 AD CMOS,, vol.30, no.25, pp.17-20, March , S/N, 11 MIRU2008, pp , July T. Komuro, et. al., High S/N imaging of a moving object using a high frame rate camera, IEEE International Conference on Image Processing, pp , San Diego, USA, Oct / frame/s CMOS 1, no.b1-1, pp.10, Sept ISO12232 TC42 WG18 Photography Digital still Cameras Determination of Exposure Index, ISO Speed Ratings, Standard Output Sensitivity, and Recommended Exposure Index, 15ISO15739 TC42 WG18 Photography Electronic Still-picture Imaging Noise Measurements, 16S. Matsuo, et. al., A very low column FPN and row temporal noise 8.9 M-Pixel, 60fps CMOS image sensor with 14bit column parallel SA-ADC, 2008 Symposium on VLSI Circuits Digest of Technical Papers, pp , Honolulu, USA, June CMOS1998CMOS ISSCCIEEE International Solid-State Circuits Conference 2006 IEEE Computer Element Workshop 2009 IEEE Asian Solid-State Circuits Conference IEEE International Symposium on Information and Computer Elements ISICE IEEE CCD CCD CCD CCD CCD CCD CMOS CMOS & Charge-Coupled Device Technology 1985, LSI CMOS & LSI Fundamentals Review Vol.3 No.3 51
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