untitled

Similar documents
テストコスト抑制のための技術課題-DFTとATEの観点から

設計現場からの課題抽出と提言 なぜ開発は遅れるか?その解決策は?

スライド 1

M SRAM 1 25 ns ,000 DRAM ns ms 5,000,

スライド 1


VLSI工学

2 76 MPU (MEF mask error factors) nm 9nmCD 14nmCD 2003 MEF 1.0(alt-PSM ) nmCD 5.5nmCD MPU OPC PSM 193nm 157nm 157nm (ROI) 193nm 157nm Ca

日立評論2008年1月号 : 基盤技術製品

Microsoft PowerPoint - 隅谷様(パナソニック).ppt [互換モード]

スライド 1

エミフィルによるノイズ対策 アプリケーション編

PUBLICITY REPORT

AMR日本語版書式

スライド 1

MOSFET 6-2 CMOS 6-2 TTL Transistor Transistor Logic ECL Emitter Coupled Logic I2L Integrated

Spansion_Corporate_Presentation

™¼fi⁄PDFŠp

スライド 1

取扱説明書

取扱説明書

特集新世代マイクロプロセッサアーキテクチャ ( 後編 ) 3. 実例 3 ユビキタス コンピューティング時代の組み込みマイクロコンピュータ, SuperH と M32R 清水徹 * 1 長谷川淳 * 2 服部俊洋 * 3 近藤弘郁 * 4 ( 株 ) ルネサステクノロジシステムソリューション統括本部

PowerPoint プレゼンテーション

DSC-T3/T33

将来の暗号技術に関する安全性要件調査報告書

PowerPoint プレゼンテーション

HardCopy IIデバイスのタイミング制約

第3節

(1) (2) (3) (4) (5) 2.1 ( ) 2

DocuPrint C5450 ユーザーズガイド

mbed祭りMar2016_プルアップ.key

新入_本文.smd

「諸雑公文書」整理の中間報告

資料1-3

0.45m1.00m 1.00m 1.00m 0.33m 0.33m 0.33m 0.45m 1.00m 2


A Responsive Processor for Parallel/Distributed Real-time Processing

MOSFET HiSIM HiSIM2 1

JJTRC 2005

「FPGAを用いたプロセッサ検証システムの製作」

富士通セミコンダクター株式会社発表資料

バイポーラパワートランジスタ

VoIP Broadcasting System 2/2 IP Convergence Communication Solution IP paradigm Integration & Management VoIP IP VoIP VoIP IT < >

PS2501-1,-2,-4,PS2501L-1,-2,-4 DS

B1 Ver ( ), SPICE.,,,,. * : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD

10 IDM NEC

Microsoft Word _zuken_2019_03_q2_report_2018_12_17_japanese.docx

S5U1C8F360T1 Manual (S1C8F360 DEMO Board)

07.報文_及川ら-二校目.indd

取扱説明書

カメラユーザーガイド

NEC THE INTERNET SOLUTION PROVIDER NEC NEC 12 NEC 16 NEC NEC NEC NEC NEC NEC

カメラユーザーガイド

カメラユーザーガイド

258 5) GPS 1 GPS 6) GPS DP 7) 8) 10) GPS GPS ) GPS Global Positioning System

PALL NEWS vol.126 November 2017

PowerPoint プレゼンテーション

45nm以降に向けたリソグラフィ技術 -ArF液浸への期待とその後の展開-

RW1097-0A-001_V0.1_170106

通し組/F3:藤井大児(センター送り)

Transcription:

ITRS2005 DFM STRJ : () 1

ITRS STRJ ITRS2005DFM STRJ DFM ITRS: International Technology Roadmap for Semiconductors STRJ: Semiconductor Technology Roadmap committee of Japan 2

ITRS STRJ 1990 1998 2000 2005 1991 MicroTech 2000 Workshop Report 1992NTRS 1994NTRS 1997NTRS SIA Roadmap Europe Japan Korea Taiwan USA ITRS 1998 Update 1999 ITRS 2000 Update 2001 ITRS 2002 Update 2003 ITRS 2004 Update 2005 ITRS 2005 12 29 [1] STRJ 1998 1999 2000 2001 2002 2003 200 STRJ STRJ STRJ STRJ STRJ STRJ [1] http://public.itrs.net 3

WG, ITRS, STRJ WG WG Design Test Process Integration, Devices, and Structures ITRS Design Session DFM System Drivers Test PIDS STRJ WG WG1 Session 2004SoC WG2 WG6 2004RAM 4

ITRS STRJ ITRS2005DFM STRJ DFM ITRS: International Technology Roadmap for Semiconductors STRJ: Semiconductor Technology Roadmap committee of Japan 5

ITRS2005DFM DFM Critical Dimension NRE MOSFET Critical Dimension Cost NRE: Non-recurring engineering Design for Manufacturability (DFM) Challenge Source Gate Lg Lg Drain Design Methodology 6

Critical Dimension Critical Dimension MOSFET ITRS200310% Year of Production MPU Physical Gate Length (nm) Lgate 3s variation (nm) 2003 45 2004 37 2005 32 2006 28 2007 25 2008 22 2009 20 2010 18 2012 14 Critical Dimension10% DFM ITRS200512% Year of Production MPU Physical Gate Length (nm) Lgate 3s variation (nm) 2003 2004 2005 32 2006 28 2007 25 2008 23 2009 20 2010 18 2012 14 Manufacturable solution exist, and are being optimized Manufacturable solution are known Manufacturable solution are NOT known Source: ITRS 2005 7

CD10 12% DFM 8

NRE Year of Production MPU/ASIC Metal1 ½ Pitch (nm) (Contacted) Mask cost ($m) from publicity available data 2005 90 2006 78 2007 22 SoC (System on a Chip) SoC Workaround FPGAConfigurable Logic Structured ASIC NRE: Non-recurring engineering 68 2008 59 2009 52 2010 45 2011 40 2012 Source: ITRS 2005 9 36 2013 32

Design for Manufacturability (DFM) TAT Challenge 10

DFM:, Challenge Tool Characterize Model 11

DFM: Challenge (MDR) 2MDR Rule 3MDRMDR (Pass/Fail MDR vsmdr MDR Critical RTL to GDS2RET OPC OPC 12

DFM: Challenge InteractionMDR Yeild Post P&R RET Yield 13

250~190nm 130~90nm 65nm~ Source: ITRS 2005 14

65nm Source: ITRS 2005 15

ITRS STRJ ITRS2005DFM STRJ DFM ITRS: International Technology Roadmap for Semiconductors STRJ: Semiconductor Technology Roadmap committee of Japan 16

STRJDFM LSI SoC RAM WG6: Process Integration, and Devices Structures 17

TFSoC 0.18 m, 140min. 200Hr MM MP3 JPEG MPEG4 Java RF Baseband SoC RAM ROM Flash 133MHz 0.18um 133MHz 170mW (typ.) CPU Cache 32KB MFI DSP URAM 128KB XYRAM 16KB MEM Cnt. CPG WDT CMT DMAC RAM VIF SCIF SIOF FLC MMC KEYIF RAM ROM Flash LCD 33MHz CMOS camera Bluetooth Sound NAND/AND Flash MMC KEY 66MHz 18

ITRS 19

STRJ TF, [2] I ON MOSFET CgVdd/Ion Ion Cg Ig Ioff L g t OX V th N A ITRS DC Ioff, Temp. V dd W t R sheet t ILD 20

[2] MOSFET Vth, ( L ) + V ( N ) + V ( Temp. ) V = V ( LER) th th g th A th V th Lg Lg Source -0.7-1.0mV/K -0.8mV/K Drain LER (Line Edge Roughness) - - Gate Source Drain Source Drain 21

(LOP) Typ. 27 Tr.+3 2010 Typ. 27 9.1 Typ. 27 6190 0.37W = 0.36W(AC) +0.006W(Leak) 0.65W = 0.36W(AC) +0.29W(Leak) Typ. 27 +3s 100 Typ. 27 +3s 100 Typ. 27 +3s 100 Typ. 27 +3s 100 11.6W = 1.1W(AC) +10.5W(Leak) 1.27W =1.1W(AC) +0.17W(Leak) Typ. 27 22 +3s 100

STRJ PIDS SNM Line Edge Roughness (LER) SNMSRAM Static Noise Margin V L V R F. Tachibana and T. Hiramoto, Re-examination of Impact of Intrinsic Dopant Fluctuations on SRAM Static Noise Margin, SSDM, pp.192-193, 2004 23

SNM 2003 ITRS LOP45nmSNM 2 SNM Lg, Vdd, Vth, DIBL 4 SNM Lg nm) NA ( 10 18 cm -3 ) DIBL (mv/v) Vdd (V) Vtsat@Vdd =0.7V (V) ITRS 22 6.69 160 0.7 0.22 30 4.45 80 0.8 0.25 2003 ITRS F. Tachibana and T. Hiramoto, Re-examination of Impact of Intrinsic Dopant Fluctuations on SRAM Static Noise Margin, SSDM, pp.192-193, 2004 24

LERSNM Line Edge Roughness (LER)SRAM SNM LER LER =2nm, LER SRAM 2005 31a-P5-8 2005 3 25

ITRS2005DFM Critical Dimension NRE DFM STRJDFM TF LOP-Tr. 201090% WG6 PIDS 45nmRAM LER 26

1. International Technology Roadmap for Semiconductors 2005 (ITRS2005) http://public.itrs.net/ ITRS2005 Design 2. JEITA STRJ http://strj-jeita.elisasp.net/strj/index.htm ITRS 2004 20046 27