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1 ( ) LSI/2007 LSI () () () () 9:0017: () 9:0020: () 9:0017: F Tel F 2-1-D-1 Tel () [1] Web Web [2][3] [1] Web [2] [3] FAX [1] Web LSI Tel: Fax: LSITS@ist.osaka-u.ac.jp 1

2 () I (1) SEM LER,,, Line edge roughness measurement of nanostructures in SEM metrology by using statistically matched wavelet Y. Midoh, K. Nakamae, and H. Fujioka Dept. Information Systems Eng., Grad. Sch. Information Science and Technology, Osaka University, Dept. Management and Information Science, Fukui University of Technology (2) SEM S. Borisov, S. Babin,,,, Abeam Technologies Inc., Development of SEM image simulator with charging condition S. Borisov, S. Babin, Y. Miyano, A. Hamaguchi, H. Abe, and Y. Yamazaki Abeam Technologies Inc., Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp. (3) CD-SEM,,,,, Optimization method of measurement conditions on CD-SEM for advanced photoresist pattern K. Hitomi, Y. Nakayama, H. Yamanashi, Y. Sohda, and H. Kawada Central Research Lab., Hitachi, Ltd., Hitachi High-Technologies Corp. (4) Mass Gate CD Layout OPC CD Die to Database, C. Yan,, Die-to-database verification tool using mass gate measurement and layout information for detecting critical dimension errors T. Hasebe, C. Yan, T. Kitamura, and M. Yamamoto NanoGeometry Research Inc. (5) () CD,,,,, CD inspection new technology leveraging a form birefringence in a Fourier space A. Kawai, M. Mochida, Y. Yamazaki, and K. Yoshino Design Dept., Industrial Instruments Company, Optical Design Dept., Core Technology Center, Nikon Corp., Advanced ULSI Process Engineering Dept. III, Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp. 9:009:20 9:209:40 9:4010:00 10:0010:20 10:2010:40 10:4010:55 2

3 I () (6) SEM,, Defect inspection using a high-resolution pattern image obtained from multiple low-resolution images of the same pattern on an observed noisy SEM image M. Takashima, Y. Midoh, and K. Nakamae Dept. Information Systems Eng., Grad. Sch. Information Science and Technology, Osaka University (7) SEM VLSI,, Performance improvement of automatic defect detection and classification from SEM images on VLSI wafers T. Okamoto, K. Miura, and K. Nakamae Dept. Information Systems Eng., Grad. Sch. Information Science and Technology, Osaka University (8),,, J. Jau, Hermes Microvision, Inc. Technology of ADI (after develop inspection) on photo resist pattern using electron beam K. Fujihara, T. Hayashi, M. Saito, and J. Jau Technology Development Center, Tokyo Electron Ltd., Hermes Microvision Inc. (9) DOI,,,,, D. Tsui, C. Young, E. Chang, A new methodology to significantly improve DOI sampling rate in 45nm production environment Y. Sato, Y. Yamada, Y. Kaga, Y. Yamazaki, M. Aoki, D. Tsui, C. Young, and E. Chang Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., KLA-Tencor Japan Ltd. 10:5511:15 11:1511:35 11:3511:55 11:5512:15 12:1513:30 (T1) CD Introduction of in-line CD measurement technology M. Ikeno Marketing & Planning Div., Semiconductor Equipment Business Group, Hitachi High-Technologies Corp. 13:3014:00 3

4 II// (10) CP-X,,, LSI Development of high precision cross sectioning system for advanced semiconductor package T. Kondo, M. Sasaki, N. Onuma, and T. Kawamura LSI Device Analysis Engineering Dept., Quality Assurance Div., Sony Semiconductor Kyushu Corp. (11) TEM,,,, High-definition TEM sample preparation technique H. Suzuki, I. Nakatani, Y. Yamamoto, H. Takahashi, and K. Iwasaki SII NanoTechnology Inc. 14:0014:20 14:2014:40 () Canceled 13 TEM 3-Dimensional quantitative analysis of semiconductor device by transmission electron microtomography, Toray Research Center Inc. Kyoto Institute of Technology,,,,, T. Ito, U. Matsuwaki, T. Naijou, Y. Otsuka, H. Hashimoto, and H. Jinnai 14:4015:00 75 (14) EBSD Cu 15:0015:20,,,,,, Analysis technique of reliability failure points in Cu interconnects using electron tomography and EBSD S. Kudo, Y. Hirose, N. Suzumura, H. Miyazaki, K. Fukumoto, K. Asayama, and J. Komori Production Technology Development Div., Renesas Technology Corp. 15:2015:35 III// (15) InAs,,,,,,, 3D structural characterization of a single InAs quantum dot M. Konno, T. Yaguchi, T. Kamino, K. Nakamura, J. Azuma, T. Kita, and K. Inoue Nanotechnology Products Business Group, Hitachi High-Technologies Corp., Faculty of Engineering, Kobe University (16) TEM-EELS,, TEM-EELS analysis for semiconductor devices N. Hashikawa, M. Kawakami, and K. Asayama Process & Device Analysis Engineering Development Dept., Renesas Technology Corp. 15:3515:55 15:5516:15 4

5 (17),,,,,,,, Investigation of dopant profile observation of Si device using electron holography T. Sato, H. Matsumoto, M. Konno, M. Fukui, S. Mamishin, Y. Taniguchi, and H. Kasai Naka Application Center, Advanced Microscope Systems Second Design Dept., Naka Div., Nanotechnology Products Business Group, Hitachi High-Technologies Corp., Advanced Research Lab. Hitachi, Ltd. (18),,,, Evaluation of magnetic thin films using three dimensional atom probe Y. Ogawa, T. Katayama, S. Ueno, K. Fukumoto, and J. Komori Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp. (19) (HEMT) (SELBIC),,,, Scanning electron and laser beams induced current (SELBIC) measurements on high electron mobility transistors (HEMTs) H. Sueyoshi, S. Takasu, W. Choi, and H. Tomokage Dept. Electronics Engineering and Computer Science, Fukuoka University, Advanced Technology Div., JEOL Ltd. (65) SELBIC,,,, A measurement example with scanning electron & laser beams induced Current (SELBIC) method S. Takasu, H. Sueyoshi, W. Choi, and H. Tomokage Advanced Technology Div., JEOL Ltd., Dept. Electronics Engineering and Computer Science, Fukuoka University 16:1516:35 16:3516:55 16:5517:15 17:1517:35 5

6 11 8 () IV (20) FIB S. Motegi, J. Rajesh, M. Vladimir V Noah Corp., Credence Systems Corp. Characterization of low resistivity FIB edit via filling for analog applications (21) Effect of backside, through Si, editing on performance of transistors H. Tanaka, R. Jain, T. Lundquist, and Q. Wang Noah Corp., Credence Systems Corp. (22) FIB NEC Transistor characteristics changing after backside circuit modification using FIB T. Sakai Test and Analysis Engineering Div., Manufacturing Operations Unit, NEC Electronics Corp. 9:009:20 9:209:40 9:4010:00 10:0010:15 () (23) 3 SEM/STEM FabMeister-EB, The introduction to 3D SEM/STEM analysis simulator FabMeister-EB C. Seko and K. Ono Mizuho Information & Research Institute Inc. (24) SEM () 3,, 3 dimensions software of a SEM (a stereo) image R. Okabe, K. Nakano, and M. Inokuchi Engineering Dept., JEOL System Technology Co., Ltd. (25),, Automation wafer edge inspection K. Nakano, T. Yoshino, and M. Inokuchi JEOL System Technology Co., Ltd. (26) S-PLUS Data visualization, statistical analysis and data mining using S-PLUS T. Tazawa Mathematical Systems, Inc. 10:1510:23 10:2310:31 10:3110:39 10:3910:47 6

7 (27) STEM Expida1255S,, Expida1255S for wafer based STEM imaging solution K. Kishimoto and S. Stone Sales Dept., FEI Company Japan Ltd., FEI Company (28) Cold FE-TEM HF-3300,,, Introduction of new cold FE-TEM HF-3300 Y. Taniguchi, M. Konno, and T. Ishikawa Nanotechnology Products Business Group, Advanced Equipment & Systems Sales Div., Hitachi High-Technologies Corp. (29) FIB-SEM XVision200,,,,, An introduction of XVision200 series K. Man, Y. Yamamoto, H. Suzuki, T. Asahata, H. Takahashi, and K. Iwasaki SII NanoTechnology Inc. (30) Zyvex 4, 6, 8,, Zyvex Instruments L.L.C. Recent nanoprobing application innovations for semiconductor failure analysis K. Inoue, J. Sanders, and T. Cavanah Zyvex Instruments L. L. C. (31) AFP (Atomic force prober) Agilent B1500A,,,, Electrical failure analysis solution by using AFP : Multiprobe MP2 and semiconductor device analyzer : Agilent B1500A M. Noguchi, R. Shioda, K. Akiyama, and S. Hosono Hachiouji Semiconductor Test Div., Agilent Technologies International Japan, Ltd. (32) Kleindiek Failure analysis by Kleindiek products N. Tsuchiya Sales Dept., AD Science Co. (33) SQUID J. Gaudestad, A. Orozco,, Failure analysis of high resistance defect using scanning SQUID microscopy J. Gaudestad, A. Orozco, and A. Miyashita Neocera Inc., Scientific Instruments Dept., Seki Technotron Corp. (34),,,,, 3 Introduction of thermal lock-in technique for thermal imaging T. Kume, K. Suzuki, K. Suzuki, T. Ishizuka, and T. Takeshima Semiconductor Industry Sales Group, System Design III, Systems Div., Hamamatsu Photonics K. K. 10:4710:55 10:5511:03 11:0311:11 11:1111:19 11:1911:27 11:2711:35 11:3511:43 11:4311:51 7

8 (35) CAD NASFA (NAvigation System for Failure Analysis),, Introduction of the CAD navigation system NASFA (NAvigation System for Failure Analysis) new function for failure analysis/observation equipments Y. Nakajima and S. Isa Development Dept., Sales Dept., Astron Corp. (36) Polishing technology to prepare for failure analysis on IC devices M. Kouno Precision Instrument Group, Industrial Machinery Div. BN TECHNOLOGY Corp. (37) MEMS RF (7Ghz, 26.5Ghz) : TERAVICTA, ATE, MEMS RF relay (7Ghz, 26.5Ghz) : TeraVicta Technologies U.S.A M. Yokokawa and K. Iida Business Development, Sales Div., ATE Service Corp. 11:5111:59 11:5912:07 12:0712:15 12:1513:40 (N1) LSI Design issues for the most advanced system LSI Utilization of design intents N. Nishiguchi STARC (Semiconductor Technology Academic Research Center) 13:4014:10 V (38),,,,,, Fault diagnosis with considering detectable delay fault size T. Aikyo, H. Takahashi, Y. Higami, J. Ohtsu, K. Ono, and Y. Takamatsu Semiconductor Technology Academic Research Center, Dept. of Electrical and Electronic Eng. and Computer Science, Grad. Sch. Science and Eng., Ehime University (39) VLSI,, A diagnostic method of VLSI considering layout-dependent parameter variation Y. Ninomiya, K. Miura, and K. Nakamae Dept. Information Systems Eng., Grad. Sch. Information Science and Technology, Osaka University 14:1014:30 14:3014:50 8

9 (40),, LSI LSI Verification result and improvement of the diagnosis accuracy of the diagnosis technique for faults in cell circuits using the switching level simulation M. Nakazato, K. Norimatsu, and K. Urata System LSI Design Dept., System LSI Div., Semiconductor Company, Toshiba Corp. (41), Xing Wu,, Study on diagnostic method of temperature-dependent faults by utilizing layout-extracted information K. Miura, X. Wu, and K. Nakamae Dept. Information Systems Eng., Grad. Sch. Information Science and Technology, Osaka University, Sch. Electronics and Information Eng., Xi an Jiaotong University 14:5015:10 15:1015:30 15:3015:45 VI (42) Per-Test X,,,, Improving diagnostic resolution of per-test X-fault diagnosis method M. Ootani, X. Wen, Y. Yamato, K. Miyase, and S. Kajihara Grad. Sch. Computer Science and Systems Eng., Kyushu Institute of Technology (43) SCAN I DDQ, NEC Fault localization method by SCAN test diagnosis and I DDQ measurement H. Sumitomo and Y. Funatsu Test and Analysis Engineering Div., Manufacturing Operations Unit, NEC Electronics Corp. (44),, Fault path tracing based on transistor operating point analysis detection of oscillation phenmenon by feedback fault M. Sanada, T. Nakamura, and K. Hashida Dept. Electronic and Photonic Systems Eng, Grad. Sch. Engineering, Kochi University of Technology (45) RC NEC An idea of fault model by RC network, and the transistor level fault diagnosis trial Y. Yoshizawa Test and Analysis Engineering Div., NEC Electronics Corp. 15:4516:05 16:0516:25 16:2516:45 16:4517:05 9

10 (46),, NEC Performance evaluation of fault diagnosis in compression mode T. Seiyama, K. Shigeta, and T. Ishiyama Test and Analysis Engineering Div., Manufacturing Operations Unit, NEC Electronics Corp. (47),,,,,,, Failure analysis case studies applying FA-Navigation system A. Uchikado, T. Okubo, T. Majima, A. Shimase, Y. Matsumoto, Y. Hanazaki, K. Hotta, and H. Terada Renesas Technology Corp.Quality Assurance Div. Production Technology Development Div., Hamamatsu Photonics K. K. Systems Div. 17:0517:25 17:2517:45 18:0020:00 (, ) 10

11 11 9 () VII (48),,,,, &, Evaluation of electrical characteristics in interconnects using nano-probing system T. Sunaoshi, Y. Mitsui, M. Fukui, T. Saito, K. Kurosawa, and J. Fuse Hitachi High-Tec Manufacturing & Service Corp., Hitachi High-Technologies Corp. (49) 8 R. E. Stallcup II, Z. Cross, K. Inoue, W. James, P. Ngo Zyvex Instruments L.L.C., Microtech Analytical Labs LP Bit cell stability testing using an encoded 8 positioner SEM nanoprobing system Zyvex Instruments L. L. C., Microtech Analytical Labs LP (50) LSI,,,,, Failure analysis of LSI device by electron beam irradiation H. Furuya, T. Ishii, K. Tanaka, S. Ito, and M. Nakamura Device Analysis CenterProduct Technology Div.Fujitsu Ltd. Advanced Materials Lab., Device & Materials Lab., Fujitsu Laboratories Ltd. (51),,,, A study on the fault site localization method of semiconductor devices by electron beam absorbed current images. T. Nokuo, J. Toyaba, Y. Ohori, M. Kamidaira, and Y. Eto Metrology Inspection Div., JEOL Ltd. 9:009:20 9:209:40 9:4010:00 10:0010:20 10:2010:35 VII () (52) IR-OBIRCH MOS-FET IR-OBIRCH analysis of power MOS-FET M. Kaneko Hyper Device Quality Assurance Dept., Sanyo Semiconductor Company (53),,,,,,, Case study on the failure analysis by electron beam absorbed current method Y. Ueki, J. Kinashi, Y. Tasaki, T. Nabeya, T. Kawaguchi, M. Todome, H. Wakamatsu, and T. Miyazaki Test System Development Dept., Toshiba Microelectronics Corp. 10:3510:55 10:5511:15 11

12 (54) LSI,,,,,,,, Development of LSI failure analysis technique by photoluminescence and laser scattering K. Tanahashi, T. Masuda, K. Adachi, A. Kuwashima, S. Watanabe, K. Tanaka, and S. Ito Advanced Process Development Dept. Silicon Technology Development Laboratories, Fujitsu Laboratories Ltd. Device Analysis Center, Production Technology Div. Product Engineering Dept. Iwate Plant, Electronic Devices Business Unit, Fujitsu Ltd. (55) STI,,,,,,,, Nano-scale stress field evaluation with shallow trench isolation structure assessed by cathodoluminescence, Raman spectroscopy, and finite element method analyses M. Kodera, T. Iguchi, N. Tsuchiya, M. Tamura, S. Kakinuma, N. Naka, and S. Kashiwagi Semiconductor Company, Toshiba Corp., Toshiba I. S. Corp., Horiba, Ltd. 11:1511:35 11:3511:55 11:5513:15 (T2) TEM Progress of TEM technology M. Suga Strategic Management Planning Office, JEOL Ltd. 13:1513:45 VII () (56),, Propasal of reverse-side emission microscope for dicing chip T. Yoshida, T. Koyama, and J. Komori Process & Device Analysis Engineering Development Dept. Production Technology Development Div., Production and Technology Unit, Renesas Technology Corp. (57) Effect of IC geometry shrink on photon emission spectrum G. Faggion, P. Sardin, S. Dudit, M. Vallet, H. Deslandes, J.-P. Roux, H. Koike, and T. Kuki NXP, ST Microelectronics, Credence Systems Corp., NOAH Corp. (58),, Semiconductor device imaging using transmission-mode laser THz emission microscope S. Kim, H. Murakami, and M. Tonouchi Institute of Laser Engineering, Osaka University 13:4514:05 14:0514:25 14:2514:45 12

13 (59) LSI-TEG,,,,,,,, NEC Observation of LSI-TEG circuits using laser THz emission microscope M. Yamashita, C. Otani, M. Tonouchi, K. Miura, K. Nakamae, and K. Nikawa Terahertz sensing and imaging Lab., RIKEN, The Institute of Laser Engineering, Osaka University, Dept. Information Systems Eng., Grad. Sch. Information Science and Technology, Osaka University, NEC Electronics Corp. 14:4515:05 15:0515:20 VIII (60) Application of configurable PVC checker for fault identification on scan based design W. Ng, S. Jacobson, D. Nguyen, P. Truong, and S. Shen World Wide Technology Development, National Semiconductor Corp., CAD Navigation, Magma Designs Automation (61) LVP NEC An experiment to evaluate the design method for failure analysis by LVP-pads placed automatically J. Nonaka Manufacturing Operations Unit, Test and Analysis Engineering Div., NEC Electronics Corp. (62) DLS,,,,,, LSI, Development of the dynamic failure analysis system using DLS method T. Harada, K. Norimatsu, K. Urata, Y. Tasaki, M. Nakamura, Y. Nakanishi, and H. Wakamatsu System LSI Div., Semiconductor Company, Toshiba Corp., Test System Development Dept., Toshiba Microelectronics Corp. (63) LSI,,,,, Dynamic LSI circuit analysis using time resolved emission Y. Matsumoto, Y. Hanazaki, S. Kawanabe, M. Komatsu, A. Shimase, and T. Majima Process & Device Analysis Engineering Development Dept., Renesas Technology Corp. (64) Tester assisted dynamic failure analysis workflow F. Beaudoin, T. Justice, and H. Koike Credence Systems Corp., NOAH Corp. 15:2015:40 15:4016:00 16:0016:20 16:2016:40 16:4017:00 13

14 () 10:0017:009 () 10:0017:00 6F Mizuho Information & Research Institute 3 SEM/STEM FabMeister-EB 3D SEM/STEM Analysis Simulator FabMeister-EB JEOL SYSTEM TECHNOLOGY CO., LTD. ImageExciteSEM-3DWaferEdgeProbe ImageExcite, SEM-3D, WaferEdge, Probe Mathematical Systems, Inc. S-PLUS Data analysis software S-PLUS Zyvex Zyvex Instruments, LLC 8 : nprober Encoded 8-Probe Nanoprober for Bitcell Stability test: nprober Agilent Technologies, Inc. New total failure analysis solution for the advanced devices AD Science Co. LSI LSI Probing Tool SEKI TECHNOTRON CORPORATION SQUID Magma C30 Magnetic Microscope Magma C30 Hamamatsu Photonics K.K. THEMOS Thermal Emission Microscope THEMOS Series Astron, Inc. CAD NASFA Introduction of the CAD navigation system NASFA new function for failure analysis/observation equipments. 14

15 BN TECHNOLOGY CORPARATION ATE ATE Service Corporation PM5 WSB2 PM5 Precision Lapping & Polishing Machine WSB2 Wafer Substrate Bonding unit MEMS RF (TeraVicta ) (Sigrity ) DFT (Tesada ) (Reid Ashman ) IDDQ BOST (Q-Star ) DC (Prometeus ) TDR (TDA ) MEMS RF Relay (TeraVicta), LSI Tester Load Board, Mechanical Tester Interface, Signal Integrity Simulation (Sigrity), DFT Tester (Tesada), Tester manipulator (Reid Ashman), IDDQ measurement BOST (Q-Star), DC Parametric Analysis (Prometeus), TDR Analysis Tool (TDA) Excel Technology Japan K.K. F/A LIT, ULTRA LIT Laser Mold Removing System F/A LIT, ULTRA LIT TechnoLab Company Evactron Evactron Anti-Contaminator NIPPON SCIENTIFIC CO., LTD. PS102 IC BA101 Plastic Mold Decapsulation System PS102, IC Backside Preparation System BA101 NOAH Corporation Credence Systems Credence Systems Corp. Failure Analysis Solution APOLLOWAVE CORP. Probe Card, Manual Prober Hitachi High-Technologies Corporation : N-6000: H-2700 Panel, Fine-structured Device Characteristic Evaluation System: N-6000, Hitachi Spherical Aberration Corrected STEM: HD-2700 Scanning Electron Microscope NIPPON BARNES CO., LTD. emmi COMBO, Infra Scope, Acoustic Micro Scope C-SAM 15

16 MARUBUN CORPORATION 3 X Uni-hite System Corp. Microfocus 3D X-ray system TOYO Corporation Nano-DST G200 Scanning probe Microscope Nano-DST, NanoIndenter G200 Tokyo Electron Limited TOKI COMMERCIAL CO., LTD HMI escan310bede X BedeScan (TM) Hermes Microvision Inc. Ebeam Inspection System escan310, Bede Scientific Instruments Ltd. X-ray Topography Defect Detection and Inspection System BedeScan (TM) (1 m PAD ) The prober system enables advanced analysis by contacting in PAD ofless than 1 m in the atmosphere The Oyama Company Ltd. P300A New Semi-Auto Probing Station P300A SII NanoTechnology Inc. XVision An introduction of XVision series Techno Pacific Corporation abeam Technologies : SEM MEBS : abeam Technologies: Monte Carlo SEM Simulator MEBS Ltd.: Electron & Ion Optics Simulator JEOL Ltd. JFAS-7000BT Beam Tracer JFAS-7000BT INTER ACTION Corporation DFT DFT Test System FEI Company Japan Ltd. FEI Failure Analysis systems 16

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