J-PARC E15 (TGEM-TPC) TGEM M1 ( ) J-PARC E15 TPC TGEM TGEM
J-PARC E15 K K-pp Missing mass Invariant mass K - 3 He Formation K - pp cluster neutron Mode to decay charged particles p Λ π - Decay p Decay E15 detector setup Cylindrical Detector System p n Neutron ToF Wall 1GeV/c K- beam p π Beam Sweeping Magnet
K-p Λ(1405) Σ π K-pp Σ π Σ CDS Σ ± π ± +n Z (ZVC) mm (CDS ) σ 14 12 10 8 6 4 2 0 10-1 1 10 10 2 ZVC z-resolution[mm] Λ pπ-
TPCのデザイン CDS : Cylindrical Detector System TGEM TPC φ170mm φ280mm ~500mm Field cage drift lengt field strip FPC基盤 8mm strip 10mm pitch double sided Thick-GEM R/O pad h ~300mm pad size 4mm 20mm R/O前の増幅器 として用いる イオンフィード バックを抑制する 可能性がある for preamp pad数 4 4 9=144 表面 裏面
TGEM ( ) 1 double-clad G10(FR4) PCB foil-gem ( ) (Rim) Rim gain TGEM TGEM@RIKEN Rim 100µm :400µm ΔV GEM 1kV Garfield
使用したTGEMのパラメーター 林栄精器にて以下の6種類のTGEMを作成 TGEM# #0 #1 #2 #3 #4 #5 (Resis2ve) 厚さ[µm] 400 400 400 200 200 400 穴の直径[µm] 300 300 500 300 500 300 Rim[µm] 100 50 No 50 No No 穴のピッチ [µm] 700 600 600 600 600 700 大きさ [cm2] 10 x 10 重要なのは 厚さ:400µm or 200µm 穴径:300µm or 500µm Rim:有り or 無し 極板:銅 or Carbon TGEM Cu electrode #5 RTGEM Carbon(graphite) electrode 特性 放電に強い HV
Test chamber setup test chamber 55 Fe Double GEM setup drift mesh 11mm 2mm 2mm E drift E trans E induct TGEM 1 TGEM 2 R/O pad R/O pad gas P10, 1atm HV divider pad16ch 1 (τ=80ns) oradc HV divider
Double TGEM #5 P10, 1atm ΔV GEM = 944V 55 Fe X-ray gain 2.0 10 4 res~10%(σ) ADC Amplifier-Shaper-Discriminator (ASD) TDC TGEM study Vth effective gain ~1 10 4
TGEM TGEM# #0 #1 #2 #3 #4 gain #5 (Resis2ve) [µm] 400 400 400 200 200 400 [µm] 300 300 500 300 500 300 Rim[µm] 100 50 No 50 No No 400µm 300µm TGEM gain E drift =150V/cm ΔV GEM : E trans : E induct 1 : 2.5 : 5 10 5 spark Rim Maxgain effective gain 10 4 10 3 10 2 700 800 900 1000 1100 1200 1300 ΔV GEM [V] gain TGEM#0,#1 gain~1 10 4 RTGEM(#5) Rim Carbon gain
TGEM 1 ΔVGEM=1200V E induct gain 1 11mm 2mm 55 Fe E drift E induct Single GEM setup drift mesh TGEM R/O pad E drift =150V/cm ΔV GEM E induct 1200V effective gain 10 4 10 3 Δ GEM [S.Bachmann et al., NIM A438, 376 (1999).] foil-gem 8kV/cm E induct linear-scale gain TGEM E induct gain 10 2 0 1 2 3 4 5 6 7 E induct [kv/cm]
gain 2 RTGEM(#5) 2 E induct HV divider 4 ΔVGEM 11mm 2mm 2mm 55 Fe E drift E trans E induct Double GEM setup drift mesh TGEM 1 TGEM 2 R/O pad E drift =150V/cm ΔV GEM : E trans : E induct type1 1 : 2.5 : 2.5 type2 1 : 2.5 : 5 type3 1 : 2.5 : 6.25 type4 1 : 2.5 : 7.5 1.E+05 10 5 1.E+04 10 4 effective gain gain 1.E+03 10 3 1.E+02 10 2 E induct dependence RTGEM(#5) type1 type2 type3 type4 spark E trans type2-2 1 : 5 : 5 gain E trans dependence type2 type2 2 1.E+01 10 750 800 850 900 950 1000 750 800 850 900 950 1000 ΔVGEM[V] ΔV GEM [V] ΔV GEM [V] RTGEM E induct gain1 10 4
TGEM# #0 #5 (Resis2ve) Rim[µm] 100 No HV divider type3 type4 E drift =150V/cm ΔV GEM : E trans : E induct type3 1 : 2.5 : 6.25 type4 1 : 2.5 : 7.5 corrected relative gain 1.4 1.2 1 0.8 0.6 0.4 0.2 (corrected by P/T[hPa/K]) #0 gain 2.0 10 4 #0 gain 4.0 10 3 #5 gain 2.0 10 4 #5 gain 4.0 10 3 time[h] peak resolution(σ)[%] #0 gain 2.0 10 4 #0 gain 4.0 10 3 #5 gain 2.0 10 4 #5 gain 4.0 10 3 0 0 0 4 8 12 16 20 24 0 4 8 12 16 20 24 gain 50 40 30 20 10 time[h] Rim Rim RTGEM gain
E15 CDS upgrade TGEM TPC TGEM Rim TGEM gain Rim RTGEM E induct gain RTGEM ion-feedback study 4 study 2009 TGEM-TPC
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p/t dependence single GEM of #0 GEM gain P/T peak ratio P/T peak ratio
effective gain 10 5 1.E+05 10 4 1.E+04 gain 10 3 1.E+03 10 2 1.E+02 1.E+01 E induct dependence TGEM w/rim type1 type2 type3 type4 10 900 1000 1100 1200 1300 900 950 1000 1050 1100 1150 1200 1250 1300 ΔVGEM[V] ΔVGEM[V] gain spark effective gain 10 5 1.E+05 10 4 1.E+04 gain 10 3 1.E+03 10 2 1.E+02 1.E+01 E induct dependence RTGEM type1 type2 type3 type4 E drift =150V/cm ΔV GEM : E trans : E induct type1 1 : 2.5 : 2.5 type2 1 : 2.5 : 5 type3 1 : 2.5 : 6.25 type4 1 : 2.5 : 7.5 10 750 800 850 900 950 1000 750 800 850 900 950 1000 ΔVGEM[V] ΔVGEM[V] ΔVGEM spark
gain 2 10 4 0.010560Hz gain 4 10 3 0.002948Hz Spark rate #5
E induct parallel plate multiplication