LER/LWR WG4 /WG5 /WG6(PIDS)/WG11 65nm WG11 1
LER/LWR 2004 UPDATE LER/LWR 2
1. LER/LWR 2. * * 3. 4. * Lithography/PIDS/Interconnect 5. 3
1. LER/LWR Line-Edge Roughness (LER) L y Line-Width Roughness (LWR) LER L y µ 4
2-1. Transistor Gate W g Source Drain Large I off Short L g Long L g L g 5
2-2. 1000 100 10 1 0.1 0.01 0.001 ~ ~ 0.01 0.1 1 10 100 1000 µ µ 6
3-1. µ µ 7
3-2. L µ 25 20 15 10 5 0 µ µ µ µ 3 m CD,LWR 8
3-3. LWR CD Spatial-frequency distribution Fluctuating line width Amplitude ~1/f m f 0 ~1/f Inverse Fourier transform Line Width L CD 1 CD 2 Parameter: m, f 0 Y-Distance (nm) f (µm -1 ) LWR 1 LWR 2 Set phase randomly LWR distribution CD-value distribution σ Average LWR CD variation (3σ) 9
3-4. LWR CD L / µ µ σ 16 14 12 10 8 6 4 2 0 L=40µm LWR LWR L=2µm 10
3-5. LWR LWR LWR M LWR ~ R(M, i) (i=1,2,...g) σ ~ ~ ~ LWR σ p: LWR M 11
3-6. LWRM M LWR 100 10 1 µ 100 180 350 350 500 2150 2150 200 350 0.1 1 10 100 µ LWR L x M LWR L x M 2 µm 2µm 12
3-7. y y (=1.318 nm) LER y( 1.318 nm) σ σ y Error σ( y) = σ 0 1 0.1 10 nm 3σ 5% 0.05 L = 2 µm 0 y = 10 nm -0.05 L=2 µm -0.1 1 10 100 y (nm) 13
3-8. LER/LWR Ly 2 m 10nm LER/LWR L y L=2 m, y=10nm SEMI 14
4. 04/5 WG5&11 SEMI TF 04/6 04/8 04/10WG5, 6&11 (PIDS) CD LWR 04/11/30-12/1 ITRS-Tokyo meeting (LWR) (LER) 05/1 WG5&11 LER WG5&11 SEMI 2µm 2µm WG4, 5&11 TDDB 2 2µm 10nm 15
WG4( TDDB (2003) Noguchi(Hitachi) LER Cu LWR TDDB WG4 WG11 16
5. LER/LWR STRJ WG5 WG6 PIDS) WG11 ITRS Litho PIDS Metrology TWG @ITRS04/12 STRJ WG4 WG11) ITRS Interconnect-TWG @ ITRS04/12 LER/LWR 2µ 10nm Lithography Table78a LWR SEMI 17
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