1 (air mass, AM) AM1 AM AM 1.5 AM0 AM W/m W 151(km) 2 ( 2.6 ) 100% 100% SO 2 4 Cu Cu 2+ Zn 2e e SO 4 2 SO 4 2 load diaphra
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1 2012 pn 1 2 Appendix km( 8 20 ) ( ) 5800K 5800K ( 1 AM0) 1 AM1.5 Spectrum Energy Density (kw/m 2 μm) AM K Black body 1 AM Wavelength (μm) 1 ( ) AM(air mass) 5800K π r2 2hc 2 1 L 2 λ 5 exp(hc/λk BT ) 1 λ r L [1]
2 1 (air mass, AM) AM1 AM AM 1.5 AM0 AM W/m W 151(km) 2 ( 2.6 ) 100% 100% SO 2 4 Cu Cu 2+ Zn 2e e SO 4 2 SO 4 2 load diaphragm Zn 2+ SO 4 2 e 2 2e ( ) Zn Zn 2+ +2e ( ) Cu 2 ++2e Cu 1mol 2eN A (N A ) m A A+m B B m C C+m D D (1) A Ze mol ZeN A = ZF( ) A (1mol ) μ A = G A + RT log[a] (2) G A A 1mol [A] A ( ( ) ) (2) 2 R ln[a] (1) ( ) m A μ A + m B μ B = m C μ C + m D μ D m A G A + m BG B m CG C m DG D = RT ln [A]mA [B] mb [C] mc [D] md (3) load V ZFV = m C G C + m D G D m A G A m B G [B] B RT ln [A]mA mb (4) [C] mc [D] md 3 pn pn
![B m C C+m D D (1) A Ze mol ZeN A = ZF( ) A (1mol ) μ A = G A + RT log[a] (2) G A A 1mol [A] A ( ( ) ) (2) 2 R ln[a] (1) ( ) m A μ A + m B μ](/docs-images/41/22700207/images/page_2.jpg "B = m C μ C + m D μ D m A G A + m BG B m CG C m DG D = RT ln [A]mA [B] mb [C] mc [D] md (3) load V ZFV = m C G C + m D G D m A G A m B G")
3 3.1 pn p n pn p n Appendix1 n p S p n p n ( ) U U TS 2 Appendix ( 3) (n i ) pn V bi n p ev bi (A.3) n n n N D p (A.4) n p n 2 i /N A N 2 N 1,2 W = N C N1 N C N2 dn 1 = dn 2 N N 1,2 d(ln W ) ln(n 2 /N 1 )dn 1 ( ) n p (dn 1 = 1 N 1 = n n N 2 = n p d(u TS)/dn n =0 ev bi = k B T ln n n k B T ln N DN A n p n 2 = E g k B T ln N cn v (5) i N D N A (n n N D p p N A ) (4) ( ) p n 3(c) w p w n E(x) ɛɛ 0 E(x) =N A (2x + w p )+N D w n (x<0), N A w p + N D (w n 2x) (x 0) (6) (ɛ ) V bi V bi = wn w p ( E(x))dx = e ɛɛ 0 (N D + N A )w n w p = e ɛɛ 0 (N D + N A ) N D N A w 2 n w n N D = w p N A. (7) (5) (7) p N A n N pn D w p w n V (a) E V x (b) NAwp NDw n E c 0 V V bi ev bi p n E E F v (c) 3(a) pn (b) E(x) x (c) pn 2 Zn Zn 2+ Cu Cu 2+
4 SO 2 4 x ( )yz x μ e (x)( ) μ h (x)( ) n(x) =N c exp[ (E c (x) μ e (x))/k B T ], p(x) =N v exp[ (μ h (x) E v (x))/k B T ], (8a) i.e., μ e (x) =E c (x)+k B T ln n(x) N c, μ h (x) =E v (x) k B T ln p(x) N v. p, n n p p n (8b) D e d 2 n p dx 2 = n p n p0 d 2 p n G(x), D h τ e dx 2 = p n p n0 G(x). (9) τ h G(x) G(x) =0 n p0 p n0 D e,h τ e,h (e) (h) ( ) L e = D e τ e, L h = D h τ h (10) x >w n p n x< w p n p (9) n p n p0 (x ) p n p n0 (x ) ( ) ( x + wp n p (x) =δn 0 exp + n p0, p n (x) =δp 0 exp x w ) n + p n0 (11) L e L h δn 0 δp 0 (8b) (11) n p0 p n0 [ x + wp μ e (x) =E c + k B T +ln δn ] [ 0 x wn, μ h (x) =E v k B T +ln δp ] 0 L e N c L h N v x ± E (p),(n) F V (E (p) F E(n) F = ev ) 4 (12) p n 10 8 j e ev h ev 0 log p, logn 0 x JJ / p p n n (a) n p p n ev / k B T (b) 4 (a) pn V ( ) (b) Shockley ( (15)) J 0 (15) (15)
5 pn (11) 4 μ e (x) δn 0 + n p0 = n( w p )=n p0 exp ev k B T, δp 0 + p n0 = p(w n )=p n0 exp ev k B T (13) (9) x = w p j e = ed e dn p dx = ed eδn 0 wp [ De j = e n p0 + D ][ h p n0 exp ev ] L e L h k B T 1 L e = ed [ e n p0 exp ev ] L e k B T 1 en 2 i [ De L e N A + D h L h N D ][ exp ev ] k B T 1 (14) (15) (15) pn Shockley pn ( ) 4(b) Shockley 3.2 pn pn (9) G(x) x ( G) n p (x) p n (x) x n p n n0 + Gτ e x p n p n0 + Gτ h ( ( ) ev n p (x) =n p0 + Gτ e + [n p0 exp k B T ( ( ev p n (x) =p n0 + Gτ h + [p n0 exp k B T ) ] 1 Gτ e ) ] Gτ h ) 1 V =0 5(a) ( ) x + wp exp, (16a) L e ( exp x w ) n (16b) L h (15) j 0 [ j = j 0 exp ev ] k B T 1 eg(l e + L h ), (17) j sc G(τ e + τ h ) 5(b) p p J n n ln p, ln n p n V m V oc V G e n p0 n p G h p n0 x J m J sc (a) 5 (a) G pn V =0 (b) pn IV (b)
![2 pn pn (9) G(x) x ( G) n p (x) p n (x) x n p n n0 + Gτ e x p n p n0 + Gτ h ( ( ) ev n p (x) =n p0 + Gτ e + [n p0 exp k B T ( ( ev p n (x) =p n0 + Gτ h + [p n0 exp k B T ) ] 1 Gτ e ) ] Gτ h ) 1 V](/docs-images/41/22700207/images/page_5.jpg "=0 5(a) ( ) x + wp exp, (16a) L e ( exp x w ) n (16b) L h (15) j 0 [ j = j 0 exp ev ] k B T 1 eg(l e + L h ), (17) j sc G(τ e + τ h ) 5(b) p p J n n ln p, ln n p n V m V oc V G e n p0 n p G h p n0")
6 J SC J ( ) V OC 5(b) J V W = JV pn J J SC V V OC W J SC V OC W J V J max V max FF J maxv max J SC V OC 1 (18) ( filling factor) IV FF J SC V OC FF (17) J SC = eg(l e + L h ), V OC = k BT e [ ] eg(τe + τ h ) ln +1 j 0 (3) V OC (4) (4) ΔG pn (19) V OC p n0 + Gτ h n n 4(a) V OC V bi (5) T 0 ΔG E g ( e V g ) *1 ( ) pn ( ) (19) 4 pn pn 4.1 Shockley-Queisser (a) T s T c n p V J T s T c + (b) + V 6(a) pn (b) pn s R L J [2] T s 5800K T c 300K (T s T c )/T s 95% pn ( ) E g = hν g hν hν g ev = hν g *1 T 0 (5)
7 (2.1 ) T s hν hν g Q(ν g,t s )= 2π c 2 ν g [ exp hν ] 1 1 ν 2 dν = 2π(k BT s ) 3 x 2 k B T s h 3 c 2 x g e x 1 dx (x gk B T s hν g ) (20) Q s 6(a) pn T s A hν g AQ(ν g,t s ) P s AP s P s P s = 2πh e 2 0 [ exp hν ] 1 k B T 1 ν 2 dν = 2π(k BT s ) 4 x 2 dx (k BT s ) 5 h 3 c 2 0 e x 1 =2π5 15h 3 c 2. (21) η(x g )= hν gq P s = x g x g x 3 [ dx x 3 ] 1 dx e x 1 0 e x (22) 1 T s =6000K E g =1.1eV 43% pn Shockley-Queisser 3.2 pn [2] 6(b) θ θ =0 ω s T c T c (T c ) T c ν >ν g (20) Q(ν g,t c ) Q c Q c t c F c0 = t c Q c np V F c (V )=F c0 np n 2 i = F c0 exp ev k B T c (23) (23) pn (23) F c0 R(V ) (17) j 0 (15) [ De j 0 = e n p0 + D ] [ h Le p n0 = e n p0 + L ] h p n0. L e L h τ e τ h 1 n p0 ( ) τ e L e 2 j 0 = e [F c0 + R(0)] (24) R(V ) V R(V )=R(0) exp(ev/k B T c ) T c 4π ω s θ =0 T s F s = t s Q s T c j SC = e(f s F c0 ) (25) (19) V OC =(k B T c /e)ln(j SC /j 0 + 1) (26)
8 I-V [ j = j 0 exp ev ] [ 1 j SC = j 0 exp ev exp ev ] OC k B T c k B T c k B T c (27) 4 0= d( jv ) dv = j V dj [ dv = j 0 exp V OC exp V V exp V ], V c V c V c V c ( V c k ) BT c e z OC V OC /V c z m V max /V c (V max V ) z OC = z m +ln(1+z m ) (28) Q s Q c V OC V c ln(q s /Q c ) (20) T s T c ln Q c = V g /V c +orderof lnt c T c 0 V OC V g (25) (28) (17) I-V pn 7 E g t s 1 1 Shockley-Queisser (SQ ) Si 28% GaAs 30% GaAs 24% Si 22% (%) Si GaAs E g (ev) 7 (25) (28) t c = t s =1 η E g T c 300K 4.2 SQ ( ) (19) J OC SQ E r N r A: E c E r B: E r E c C: E r E v D: E c E r 4 U A = c n nn r (1 f(e r )), U B = e n N r f(e r ), U C = c p N r f(e r ), U D = e p pn r (1 f(e r ))
9 c n e n ( ) U = U A U B = U C U D = ( σ e [n + N c exp σ h σ e v h v e N r (pn ni 2 ) Ec Er k BT )] + σ h [ p + N v exp ( Er Ev k BT )] (29) ( [3] p.68 73) σ e,h v e,h pn ( ) x = x s (n ) D h d(p n p n0 ) dx = S h (p n p n0 ) (x = x s ) (30) S h 3.2 G(x) x Appendix2 G(x) pn GaAs 8(a) E g 8(b) Al x Ga 1 x As-GaAs η coll η coll = e ( ) η coll 8(b) ( ) η coll Al x Ga 1 x As Al x 0.8 E g 2.09eV Γ E g (Γ) =2.56eV X Al Ga As GaAs p with window (a) GaAs n coll (%) without window GaAs homo junction (b) Wavelength ( m) 8 (a) (Al 0.8Ga 0.2As ) GaAs (b)gaas ( ) ( )
10 η coll (%) E i = 440kV/m E i = 0 Wavelength (μm) Si (33) 2 x j =0.5μm S e =1km/s GaAs AlAs 0.5% hν < E (Γ) g E i α G(x) =αf exp( αx) p D e d 2 Δn p dx 2 + μ e E i dδn p dx Δn p τ e + Fαexp( αx) = 0 (31) Δn p n p n p0 μ e 2 x = x j : dδn p D e dx Δn pe i = S e Δn p, (32a) x =0: Δn p = 0 (32b) j (e) SC = [ eαf α 2 +2E e α L 2 (E e + α)exp( αx j )+f exp( αx j ) (S e/d e + E e )cosh(fx j )+f sinh(fx j ) e (S e /D e + E e ) sinh(fx j )+f cosh(fx j ) f exp(e e x j )(S e /D e +2E e + α) ] (S e /D e + E e ) sinh(fx j )+f cosh(fx j ) (33) E e μ ne i 2D e, f 2 E 2 e + 1 L 2 e (34) 9 η coll ( ) V OC 4.1 E g /e SQ V OC FF V max
11 10 Si New South Waels PVCDROM I-V ( 10 ) E g SQ Si 100μm 1 E g E g Shockley-Queisser (1) (2) T s (3)pn (3) pn *2 pn junctions tunnel Sunlight Prism E g1 E g2 E gn Sunlight p n EgN p n E g1 11 E g pn 2 *2 (7.1 )
12 (1) (2) 4π *3 11 *4 pn 100% 300K (28) hν=1ev η=90% 2eV 95% (2.1 ) 94% 4.1 (28) pn pn 2 11 pn ( ) E gn >E gn 1 > >E g1 pn E gj pn I-V [4] AM1.5 87% ( ) 3 a( )-SiC/μ( )-Si III-V IV [5] Solar Junction National Renewable Energy Laboratory (NREL) 43.5% (AM ) ( 12 web ) InGaAs-GaAs-InGaP3 36.9% [6] 100 p n t p n t p n GaInP 2 GaAs Ge coll (%) GaInP 2 GaAs Ge Wavelength ( m) % GaInP 2 Solar Junction Inc. web 5 (NTT) NTT (30 ) *3 *4 2π
![2 ( ) 3 a( )-SiC/μ( )-Si III-V IV [5] Solar Junction National Renewable Energy Laboratory (NREL) 43.5% (AM1.](/docs-images/41/22700207/images/page_12.jpg "5 400 ) ( 12 web ) - 2010 InGaAs-GaAs-InGaP3 36.9% [6] 100 p n t p n t p n GaInP 2 GaAs Ge coll (%) 80 60 40 20 0 GaInP 2 GaAs Ge 0.")
13 Si Si (Appendix2) (19) G j SC τ e,h Si Si Si (1) (2) (3) (2) (1) (3) (2) 5.2 InP InP InP pn InP 16%(AM1.5) [7] 7 (a) 1MeV (γ ) Si Si GaAs InP deep level trangent spectroscopy (DLTS) 7(b) *5 [8] H4 H4 H5 InP (29) H4( ) ( 1 ) ev InP NASA *5 DLTS pn [9]
![5) [7] 7 (a) 1MeV (γ ) Si Si GaAs InP deep level trangent](/docs-images/41/22700207/images/page_13.jpg "spectroscopy (DLTS) 7(b) *5 [8] H4 H4 H5 InP (29) H4( ) ( 1 ) ev")
14 0 Normalized Maximum Power P / P (a) dark GaAs 2 illum (10mW/cm ) 2 illum (70mW/cm ) 2 forward (5mA/cm ) MeV electron fluence (cm 2) Si InP DLTS signal (b) H4 (0.37eV) cm 0min 2 Injection 249mA/cm at 190K 2min 5min H5 (0.52eV) T (K) 7 (a)si GaAs InP 1MeV ( ) (AM1.5) InP (b)inp pn DLTS H4 H5 [7, 8] NASA National Renewable Energy Laboratory (NREL) H4 P (V + + P ) (P i ) P In P [10] P P + V p + In 5.3 In P In ( ) InGaAs % Si III-V In Ga Si III-V III-V
15 Si III-V GaAs Si 4% Si III-V 2 (001) III V TEM Si GaAs Si GaAs 20% Si [11] ( ) Germany 30 (feed-in 20 tariff, FIT) Spain 10 Solar Power Electricity FIT Price Year 2600MW MW MW Euro cent /kwh
16 FIT ( ) Q CdTe (5/8) 6MW 2MW MW ( ) ( ) CuInSe 2 (CIS) CuIn 1 x Ga x Se 2 (CIGS) Roll-to-Roll 30 In 6000 (kw) ( ) (a) (b) 8 web
17 Roll-to-Roll Si InP Staebler-Wronski CIS CIGS In Ga Cu 2 ZnSnS 4 Si Si Si Si CVD Si Si ( ) 100μm 100μm Si (001) kwh ( ) [12] 2 ( )
18 E C.B. E g (1) (2) (3) (4) (5) (6) V.B. (a) t <0 t =0 t < 1ps 1ps 1ns t > 10 s (b) 9 (a) (1) (2) (3) ( ) (4) (5) (6) (b) (a)-(3) ( 9) 1ps ( 9(a)(2)) ( 9(a)(3)-(5)) 9(b) T H μ c μ v Δμ H Δμ H = μ c μ v (35) j use /e = f s N(E g,, 0,T s ) f c N(E g,,δμ H,T H )+(f c f s )N(E g,, 0,T c ), (36)
19 100 Efficiency (%) direct, Δμ H <0 direct, Δμ H =0 diffuse, Δμ H =0 diffuse, Δμ H < Band gap (ev) 10 (40) [13] E use j use = f s d dt E(E g,, 0,T s ) f c d dt E(E g,,δμ H,T H )+(f c f s ) d dt E(E g,, 0,T c ) (37) N(E 1,E 2,μ,T) E(E 1,E 2,μ,T) 2π E2 E 2 de h 3 c 2 exp[(e μ)/k B T ] 1, 2π h 3 c 2 E 1 E2 E 1 E 3 de exp[(e μ)/k B T ] 1 (38a) (38b) f s f c 4.1 (36),(37) 3 T c T c T c 1 ΔS =(ΔE Δμ H )/T H T c Δμ = ΔE TΔS = Δμ H (T/T H )+ΔE(1 T/T H ) (39) P use = j use Δμ/e =(j use /e)[δμ H (T/T H )+ΔE(1 T/T H )] (40) 10 E g =0 85% ( )
![c 2 exp[(e μ)/k B T ] 1, 2π h 3 c 2 E 1 E2 E 1 E 3 de exp[(e μ)/k B T ] 1 (38a) (38b) f s f c 4.](/docs-images/41/22700207/images/page_19.jpg "1 (36),(37) 3 T c T c T c 1 ΔS =(ΔE Δμ H )/T H T c Δμ = ΔE TΔS = Δμ H (T/T H )+ΔE(1 T/T H ) (39) P use = j use Δμ/e =(j use /e)[δμ H (T/T H")
20 (a) E i (ev) (b) E c (ev) (a) (b) E c E i [12] (a)(5) 9(b) 11(a) 3 E 31 E 21 E SQ (1) 2 pn ( ) 11(b) [14] pn V OC GaAs InAs InAs GaAs 7% In (001) 4 ( 12(a),(b)) GaAs InAs InAs ( 12(c)) 1 InAs GaAs
21 (a) (b) (c) 12 GaAs InAs (a) AFM (b) TEM 1 InAs (c) GaAs InAs InAs ( ) * (multiexciton) ( ) InP PbSe [16] pn h p n Wien *6 3 ( p.45) [15]
22 pn [17] SF [1] M. P. Thekaekara, R. Kruger, and C. H. Duncan, Appl. Optics 8, 1713 (1969). [2] W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961). [3] P. Würfel, Physics of Solar Cells (Willey, 2005). [4]A.S.BrownandM.A.Green,PhysicaE14, 96 (2002). [5]M.A.Greenet al., Prog. in Photovoltaics 20, 12 (2012). [6] T. Agui et al., Renewable Energy, Proceedings, Yokohama 2010; O-Pv-5-4. [7] A. Yamamoto, M. Yamaguchi and C. Uemura, Appl. Phys. Lett. 44, 611 (1983). [8] K. Ando and M. Yamaguchi, Appl. Phys. Lett. 47, 485 (1985). [9], ( 1983). [10] R. W. Jansen, Phys. Rev. B 41, 7666 (1990). [11] ( ) ( 2011) [12] M. A. Green, Third Generation Photovoltaics (Springer, 2006). [13] R. T. Ross and A. J. Nozik, J. Appl. Phys. 53, 3813 (1982). [14] A. J. Nozik, Physica E 14, 115 (2002). [15] D. Guimard et al., Appl. Phys. Lett. 96, (1-3) (2010). [16] R.J. Ellingson, O.I. Micic, J. Blackburn, P. Yu, G. Rumbles, A.J. Nozik, Nano Lett. 5, 865 (2005). [17] M. De Zoysa, T. Asano, K. Mochizuki, A. Oskooi, T. Inoue, and S. Noda, Nature Photonics 6, 535(2012). Appendix ev ( ) ( ) n p D g e f h g e (E)dE = D e (E)f(E)dE, g h (E)dE = D h (E)[1 f(e)]de D h (E)f h (E)dE (A.1a) (A.1b) m e m h D e (E) = 2m 3 e 2m 3 E h Ec π 2 3 ( ), D h (E) = Ev π 2 3 E ( ) (A.2)
23 E c E v n n = E c g e (E)dE = 2m 3 e π 2 3 E c ( ) E Ec de m 3/2 ( ) 1+exp(E E F )/k B T 2 e k B T EF E c exp 2π k B T p E F E c E v E F m e m h ( np = N c N v exp E ) ( ( g m ) n 2 e,h k B T 3/2 ) i N c,v 2, E g E c E v (A.4) k B T 2π N c N v n i n = p E F E F = E c + E v 2 + k BT 2 ln N v = E c + E v + 3k BT ln m h N c 2 4 m e E F N D n D n + n D = N D F = U TS n D N D W S = k B ln W F = E Dn D k BT ln [ 2 n D N D! n D!(N D n D)! E D 2 nd ln N! N ln N N E F = F n D = E D k B T ln [ 2(ND n D ) n D ]. (A.3) (A.5) ] [, n D = N D 1+ 1 ( )] 1 2 exp ED E F (A.6) k B T 1/2 N A p A n D (A.3) T 0 E F E D (A.3) n p n p n p p n p Appendix2 2 1 E h g h h direct h g q E g ( ) (k) E g k k hν E g ( ) (a) k (b) k (p + ea)2 H = + V (r) p2 + V (r)+ A p 2m 0 2m 0 2m 0 = H 0 + H (A.7) H = A p/2m 0 k k k c k v k c H k v = e 2m 0 k c A p k v = ea 2m 0 k c p A k v. (A.8)
24 p A p A W vc = 2π k c H k v 2 δ(e ck E vk + ω) (A.9) δ(e kc E kv ω)dk =2π (2m r) 3/2 ω Eg α( ω) ( h ) E g direct indirect h ( 1 m r α( ω) ω E g 1 m + 1 v m c ) (A.10) (A.11) α( ω) ( ω E g ) 2 (A.12)
1/68 A. 電気所 ( 発電所, 変電所, 配電塔 ) における変圧器の空き容量一覧 平成 31 年 3 月 6 日現在 < 留意事項 > (1) 空容量は目安であり 系統接続の前には 接続検討のお申込みによる詳細検討が必要となります その結果 空容量が変更となる場合があります (2) 特に記載
1/68 A. 電気所 ( 発電所, 変電所, 配電塔 ) における変圧器の空き容量一覧 平成 31 年 3 月 6 日現在 < 留意事項 > (1) 空容量は目安であり 系統接続の前には 接続検討のお申込みによる詳細検討が必要となります その結果 空容量が変更となる場合があります (2) 特に記載のない限り 熱容量を考慮した空き容量を記載しております その他の要因 ( 電圧や系統安定度など ) で連系制約が発生する場合があります
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6. [1] (cal) (J) (kwh) ( 1 1 100 1 ( 3 t N(t) dt dn ( ) dn N dt N 0 = λ dt (3.1) N(t) = N 0 e λt (3.2) λ (decay constant), λ [λ] = 1/s 1947 2
![6. [1] (cal) (J) (kwh) ( 1 1 100 1 ( 3 t N(t) dt dn ( ) dn N dt N 0 = λ dt (3.1) N(t) = N 0 e λt (3.2) λ (decay constant), λ [λ] = 1/s 1947 2](/thumbs/41/22727315.jpg "6. [1] (cal) (J) (kwh) ( 1 1 100 1 ( 3 t N(t) dt dn ( ) dn N dt N 0 = λ dt (3.1) N(t) = N 0 e λt (3.2) λ (decay constant), λ [λ] = 1/s 1947 2")
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22 9 8 5 22 9 29 0 2 2 5 2.............................. 5 2.2.................................. 6 2.3.............................. 8 3 8 4 9 4............................. 9 4.2 S(, a)..............................
slide1.dvi
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Tokyo Institute of Technology high-k/ In.53 Ga.47 As MOS - Defect Analysis of high-k/in.53 G a.47 As MOS Capacitor using capacitance voltage method,,, Darius Zade,,, Parhat Ahmet,,,,,, ~InGaAs high-k ~
QMI_10.dvi
... black body radiation black body black body radiation Gustav Kirchhoff 859 895 W. Wien O.R. Lummer cavity radiation ν ν +dν f T (ν) f T (ν)dν = 8πν2 c 3 kt dν (Rayleigh Jeans) (.) f T (ν) spectral energy
PROSTAGE［プロステージ］
PROSTAGE & L 2 3200 650 2078 Storage system Panel system 3 esk system 2 250 22 01 125 1 2013-2014 esk System 2 L4OA V 01 2 L V L V OA 4 3240 32 2 7 4 OA P202 MG55 MG57 MG56 MJ58 MG45 MG55 MB95 Z712 MG57
F8302D_1目次_160527.doc
N D F 830D.. 3. 4. 4. 4.. 4.. 4..3 4..4 4..5 4..6 3 4..7 3 4..8 3 4..9 3 4..0 3 4. 3 4.. 3 4.. 3 4.3 3 4.4 3 5. 3 5. 3 5. 3 5.3 3 5.4 3 5.5 4 6. 4 7. 4 7. 4 7. 4 8. 4 3. 3. 3. 3. 4.3 7.4 0 3. 3 3. 3 3.
6 2 T γ T B (6.4) (6.1) [( d nm + 3 ] 2 nt B )a 3 + nt B da 3 = 0 (6.9) na 3 = T B V 3/2 = T B V γ 1 = const. or T B a 2 = const. (6.10) H 2 = 8π kc2
![6 2 T γ T B (6.4) (6.1) [( d nm + 3 ] 2 nt B )a 3 + nt B da 3 = 0 (6.9) na 3 = T B V 3/2 = T B V γ 1 = const. or T B a 2 = const. (6.10) H 2 = 8π kc2](/thumbs/92/109118076.jpg "6 2 T γ T B (6.4) (6.1) [( d nm + 3 ] 2 nt B )a 3 + nt B da 3 = 0 (6.9) na 3 = T B V 3/2 = T B V γ 1 = const. or T B a 2 = const. (6.10) H 2 = 8π kc2")
1 6 6.1 (??) (P = ρ rad /3) ρ rad T 4 d(ρv ) + PdV = 0 (6.1) dρ rad ρ rad + 4 da a = 0 (6.2) dt T + da a = 0 T 1 a (6.3) ( ) n ρ m = n (m + 12 ) m v2 = n (m + 32 ) T, P = nt (6.4) (6.1) d [(nm + 32 ] )a
) ] [ h m x + y + + V x) φ = Eφ 1) z E = i h t 13) x << 1) N n n= = N N + 1) 14) N n n= = N N + 1)N + 1) 6 15) N n 3 n= = 1 4 N N + 1) 16) N n 4
![) ] [ h m x + y + + V x) φ = Eφ 1) z E = i h t 13) x << 1) N n n= = N N + 1) 14) N n n= = N N + 1)N + 1) 6 15) N n 3 n= = 1 4 N N + 1) 16) N n 4](/thumbs/92/107866707.jpg ") ] [ h m x + y + + V x) φ = Eφ 1) z E = i h t 13) x << 1) N n n= = N N + 1) 14) N n n= = N N + 1)N + 1) 6 15) N n 3 n= = 1 4 N N + 1) 16) N n 4")
1. k λ ν ω T v p v g k = π λ ω = πν = π T v p = λν = ω k v g = dω dk 1) ) 3) 4). p = hk = h λ 5) E = hν = hω 6) h = h π 7) h =6.6618 1 34 J sec) hc=197.3 MeV fm = 197.3 kev pm= 197.3 ev nm = 1.97 1 3 ev
I.2 z x, y i z = x + iy. x, y z (real part), (imaginary part), x = Re(z), y = Im(z). () i. (2) 2 z = x + iy, z 2 = x 2 + iy 2,, z ± z 2 = (x ± x 2 ) +
I..... z 2 x, y z = x + iy (i ). 2 (x, y). 2.,,.,,. (), ( 2 ),,. II ( ).. z, w = f(z). z f(z), w. z = x + iy, f(z) 2 x, y. f(z) u(x, y), v(x, y), w = f(x + iy) = u(x, y) + iv(x, y).,. 2. z z, w w. D, D.
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240-8501 79-2 Email: nakamoto@ynu.ac.jp 1 3 1.1...................................... 3 1.2?................................. 6 1.3..................................... 8 1.4.......................................
SIRIUS_CS3*.indd
SIRIUS Innovations SIRIUS SIRIUS Answers for industry. SIRIUS SIRIUS S00 S0 SIRIUS SIRIUS ZX0-ORAZ-0AB0 7.5kW 6 S00 7 8 7.5kW 9 S00 0 8.5kW S0 8.5kW S0 5 6 7 IO-Link AS-InterfaceRT 8 8US 5 6 SIRIUS SIRIUS
5.. z = f(x, y) y y = b f x x g(x) f(x, b) g x ( ) A = lim h g(a + h) g(a) h g(x) a A = g (a) = f x (a, b)............................................
5 partial differentiation (total) differentiation 5. z = f(x, y) (a, b) A = lim h f(a + h, b) f(a, b) h........................................................... ( ) f(x, y) (a, b) x A (a, b) x (a, b)
r 1 m A r/m i) t ii) m i) t B(t; m) ( B(t; m) = A 1 + r ) mt m ii) B(t; m) ( B(t; m) = A 1 + r ) mt m { ( = A 1 + r ) m } rt r m n = m r m n B
1 1.1 1 r 1 m A r/m i) t ii) m i) t Bt; m) Bt; m) = A 1 + r ) mt m ii) Bt; m) Bt; m) = A 1 + r ) mt m { = A 1 + r ) m } rt r m n = m r m n Bt; m) Aert e lim 1 + 1 n 1.1) n!1 n) e a 1, a 2, a 3,... {a n
Note5.dvi
12 2011 7 4 2.2.2 Feynman ( ) S M N S M + N S Ai Ao t ij (i Ai, j Ao) N M G = 2e2 t ij 2 (8.28) h i μ 1 μ 2 J 12 J 12 / μ 2 μ 1 (8.28) S S (8.28) (8.28) 2 ( ) (collapse) j 12-1 2.3 2.3.1 Onsager S B S(B)
18 I ( ) (1) I-1,I-2,I-3 (2) (3) I-1 ( ) (100 ) θ ϕ θ ϕ m m l l θ ϕ θ ϕ 2 g (1) (2) 0 (3) θ ϕ (4) (3) θ(t) = A 1 cos(ω 1 t + α 1 ) + A 2 cos(ω 2 t + α
18 I ( ) (1) I-1,I-2,I-3 (2) (3) I-1 ( ) (100 ) θ ϕ θ ϕ m m l l θ ϕ θ ϕ 2 g (1) (2) 0 (3) θ ϕ (4) (3) θ(t) = A 1 cos(ω 1 t + α 1 ) + A 2 cos(ω 2 t + α 2 ), ϕ(t) = B 1 cos(ω 1 t + α 1 ) + B 2 cos(ω 2 t
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71 7 3,000 1 MeV t = 1 MeV = c 1 MeV c 200 MeV fm 1 MeV 3.0 10 8 10 15 fm/s 0.67 10 21 s (1) 1fm t = 1fm c 1fm 3.0 10 8 10 15 fm/s 0.33 10 23 s (2) 10 22 s 7.1 ( ) a + b + B(+X +...) (3) a b B( X,...)
基礎数学I
I & II ii ii........... 22................. 25 12............... 28.................. 28.................... 31............. 32.................. 34 3 1 9.................... 1....................... 1............
MAIN.dvi
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(1) θ a = 5(cm) θ c = 4(cm) b = 3(cm) (2) ABC A A BC AD 10cm BC B D C 99 (1) A B 10m O AOB 37 sin 37 = cos 37 = tan 37
4. 98 () θ a = 5(cm) θ c = 4(cm) b = (cm) () D 0cm 0 60 D 99 () 0m O O 7 sin 7 = 0.60 cos 7 = 0.799 tan 7 = 0.754 () xkm km R km 00 () θ cos θ = sin θ = () θ sin θ = 4 tan θ = () 0 < x < 90 tan x = 4 sin
4_Laser.dvi
1 1905 A.Einstein 1917 A.Einstein 1954 C.H.Townes MASER Microwave Amplification by Stimulated Emission of Radiation 23.9 GHz 1.26 cm 1960 T.H.Maiman LASER Light Amplification by Stimulated Emissin of Radiation
1 1 H Li Be Na M g B A l C S i N P O S F He N Cl A e K Ca S c T i V C Mn Fe Co Ni Cu Zn Ga Ge As Se B K Rb S Y Z Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb T e
No. 1 1 1 H Li Be Na M g B A l C S i N P O S F He N Cl A e K Ca S c T i V C Mn Fe Co Ni Cu Zn Ga Ge As Se B K Rb S Y Z Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb T e I X e Cs Ba F Ra Hf Ta W Re Os I Rf Db Sg Bh
3.2 [ ]< 86, 87 > ( ) T = U V,N,, du = TdS PdV + µdn +, (3) P = U V S,N,, µ = U N. (4) S,V,, ( ) ds = 1 T du + P T dv µ dn +, (5) T 1 T = P U V,N,, T
![3.2 [ ]< 86, 87 > ( ) T = U V,N,, du = TdS PdV + µdn +, (3) P = U V S,N,, µ = U N. (4) S,V,, ( ) ds = 1 T du + P T dv µ dn +, (5) T 1 T = P U V,N,, T](/thumbs/82/86676506.jpg "3.2 [ ]< 86, 87 > ( ) T = U V,N,, du = TdS PdV + µdn +, (3) P = U V S,N,, µ = U N. (4) S,V,, ( ) ds = 1 T du + P T dv µ dn +, (5) T 1 T = P U V,N,, T")
3 3.1 [ ]< 85, 86 > ( ) ds > 0. (1) dt ds dt =0, S = S max. (2) ( δq 1 = TdS 1 =0) (δw 1 < 0) (du 1 < 0) (δq 2 > 0) (ds = ds 2 = TδQ 2 > 0) 39 3.2 [ ]< 86, 87 > ( ) T = U V,N,, du = TdS PdV + µdn +, (3)
1.1 ft t 2 ft = t 2 ft+ t = t+ t 2 1.1 d t 2 t + t 2 t 2 = lim t 0 t = lim t 0 = lim t 0 t 2 + 2t t + t 2 t 2 t + t 2 t 2t t + t 2 t 2t + t = lim t 0
A c 2008 by Kuniaki Nakamitsu 1 1.1 t 2 sin t, cos t t ft t t vt t xt t + t xt + t xt + t xt t vt = xt + t xt t t t vt xt + t xt vt = lim t 0 t lim t 0 t 0 vt = dxt ft dft dft ft + t ft = lim t 0 t 1.1
positron 1930 Dirac 1933 Anderson m 22Na(hl=2.6years), 58Co(hl=71days), 64Cu(hl=12hour) 68Ge(hl=288days) MeV : thermalization m psec 100
positron 1930 Dirac 1933 Anderson m 22Na(hl=2.6years), 58Co(hl=71days), 64Cu(hl=12hour) 68Ge(hl=288days) 0.5 1.5MeV : thermalization 10 100 m psec 100psec nsec E total = 2mc 2 + E e + + E e Ee+ Ee-c mc
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II(c) 1 October. 21, 2009 1 CS53 yamamoto@cs.kobe-u.ac.jp 3 1 7 1.1 : : : : : : : : : : : : : : : : : : : : : : 7 1.2 : : : : : : : : : : : : : : : : 8 1.2.1 : : : : : : : : : : : : : : : : : : : 8 1.2.2