完成版2.PDF
|
|
|
- しげのぶ みしま
- 5 years ago
- Views:
Transcription
1 14 Preparation and characterization of barium strontium titanate thin films
2 X X LCR Sawyer-Tower (Ba x Sr 1-x )TiO SrTiO Pt(100)/MgO(100) Pt(100)/MgO(100) (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO 3
3 (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO Ba/(Ba+Sr) x Sr 1-x )TiO (Ba 0.6 Sr 0.4 )TiO (Ba 0.6 Sr 0.4 )TiO Ti/(Ba+Sr) Ti/(Ba+Sr) x 1-x )TiO Ti/(Ba+Sr) Ti/(Ba+Sr) Ti/(Ba+Sr) (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO
4 1 1.1 (FeRAM)Dynamic Random Access Memory(DRAM) (1) MOS FeRAM (2) (Pb(Zr,Ti)O 3 ) 1Gbit DRAM ((Ba x Sr 1-x )TiO 3 ) (3) 1.2 ( ) ABO A O B P E
5 cf (P r )b E=0 (P s )dg (E r ) 2 2 (4) T c Curie-Weiss (3) A B O ((Ba x Sr 1-x )TiO 3 ) 120 (Pb(Zr,Ti)O 3 ) 400 (Ba x Sr 1-x )TiO 3 ( 10,000 )DRAM (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 BaTiO3 SrTiO3 Ba/(Ba+Sr)Ti/(Ba+Sr) (Ba x Sr 1-x )TiO 3-2 -
6 (Ba x Sr 1-x )TiO 3 Ba/(Ba+Sr) Ti/(Ba+Sr) BaTiO 3 (Ba x Sr 1-x )TiO 3 (5),(6) A Ba Sr Ba/(Ba+Sr) Pt (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO X 3 (Ba x Sr 1-x )TiO 3 (x=1.00.5) 4 (Ba x Sr 1-x )TiO 3 Pt(100)/MgO(100) Ba/(Ba+Sr) 5 Ti/(Ba+Sr) 6 (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO
7 (1) P. Y. Leasaichene, et al IEDM Tech. Dig. 831 (1994) (2), IC RRAM,, (1996) (3), DRAM, (4) pratt, I.H. Proc, IEEE, 59, 1440, 1971 (5),,, (1997) (6), (Ba,Sr)TiO 3 DRAM,, (1993) - 4 -
8 (1) 2.1
9 - 6 - (2) (BaxSr1-x)TiO3 Pt RF (BaxSr1-x)TiO3 A B Pt Pt
10 - 7 - Ar O2 L C2 C1 (13.56MHz 2.2 (a) A B A B (b) B A B 2.3
11 - 8 - ) ( ) ( ) ( = = s m K T M Pa P nv J e e T(K) Pe(Pa) Je (M T a (a1)) Pe nm (3) (W)W Au 2.1 Au Au WMo 2.4 W
12 X X X X X X X 3 X X? d X? 2dsin?n? 2.5 X X X TiO2 2.5 X
13 X X X X X X X 2 X X X ( ) X X X X NaI X 2.6 X 10
14 ( )? µ? s? i±? µ? i 0 ( ) (4) (5) (514.5 nm) nm 2 ( ) TO
15 12 CCD nm /mm 1800 /mm CCD PC 2.7
16 (SEM)nm (SE) ( BSE) X ( ) (6) SEM 2.9 1kV40kV nm (AFM) AFM SEM
17 2 U(r) Lenard-Jones σ U( r) = 4ε r 12 σ r es r (7) 2.10 AFM AFM 3 (8) 100µm200µm 10 9 N/ AB (A-B) Z xy xy z 3 Ret CPU CRT Z 6 A B XY 2.10AFM 14
18 2.3.4 X X nm X X X X (9) 2.12 X X X d? X 2.11 X 2.12 X ( ) 15
19 tan X R Z R X jx R Z + = = + = θ tan B G Y G B jb G Y + = = + = φ LCR LCR LCR Z? Z Z Z (O)? (deg.)r (O)X (O) Y Y Y (O)G (S)B (S) 2.13 Z Y 2.13 Z Y j Z Z X R Y Y G B j
20 17 2 V I V I?? LCR (ESR) (10) LCR HCUR ( )HPOT ( High )LPOT ( Low )LCUR ( )GUARD
21 Sawyer-Tower Sawyer-Tower Sawyer-Tower 2.15 P E (11) O-A-B-M M 0 OR 0 MB OS OF( ) 0 (F-M ) M -R -B 2.15P-E M R F M E P F R B S
22 P-E Sawyer-Tower 2.16 Cx C0(C0 Cx) C0Cx C0 Q V = Q C 0 Vx Cx +q -q +q V C0C0Cx -q Vx 2.16Sawyer-Tower 19
23 2.4 (1),,, (1991) (2),,, (1998) (3),,, (1994) (4),,, (1995) (5),,, (1988) (6), QA,, (1996) (7), RD, vol.31 No.2 (1996.6) (8),,, (1995) (9),,, (1996) (10),, 70, 11, (2001) (11), 20
24 3 (Ba,Sr)TiO3 3.1 (1) ((BaxSr1-x)TiO3) (Pb(Zr,Ti)O3) (2) (SrBi2Ta2O9) (3) Pb Bi LSI Si (4) (BaxSr1-x)TiO3 MOCVD (BaxSr1-x)TiO3 (BaxSr1-x)TiO3 RF RF (BaxSr1-x)TiO3 21
25 3.2 SrTiO 3 pellet BaTiO 3 (5)(6) 3.1 BaTiO3 10mm SrTiO3 SrSrO SrSrO SrTiO SrTiO3 BaTiO3 SrTiO3 (BaxSr1-x)TiO3 MgO(100)MgO(100)(Ba,Sr)TiO3 1.0 (7) Si (100) (8) MgO Si MgO 3.2 BaTiO3 SrTiO3 070 Ba/(Ba+Sr) area ratio of STO/BTO target (%) 3.2BaTiO3 SrTiO3-22 -
26 MgO (BaxSr1-x)TiO3 Ba/(Ba+Sr)SrTiO3 Sr SrTiO3 60 Ba/(Ba+Sr) SrTiO3 3.4Pt(100)/MgO(100) (9) Pt MgO Pt 3.1 (BaxSr1-x)TiO3 c (001) Pt 3.1Pt(100) Pt (100) Substrate MgO(100) Pt Temperature 700 Pressure 1.0 Pa (111) Rf Power 70 W Ar : O2 1 :1 Thickness 100 nm MgO (100)
27 3.5Pt(100)/MgO(100) (BaxSr1-x)TiO3 Pt(100)/MgO(100)Ba0.9Sr0.1TiO3Ba0.5Sr0.5TiO3 Ar/O2 Ba0.8Sr0.2TiO3 Ar Thornton 4 (10) 3.3 Thornton 1(ZONE-1) Ar (TS/TM<0.3) 3.3Thornton T(ZONE-T) Ar (TS/TM<0.3) 2 1 T(Transition- ) 3(ZONE-2) TS/TM>0.3 1 T T 4(ZONE-3) TS/TM> TS
28 Thornton 0.3<TS/TM<0.5 (Ba,Sr)TiO RF Power 90W ( T-S ) Ba/(Ba+Sr) Ba/(Ba+Sr) Ti/(Ba+Sr) Ti/(Ba+Sr) Ba0.8Sr0.2TiO3 0.5 BaTiO3 SrTiO T-S PaAr/O2 3/1 Ba/(Sr+Sr)T-S 0.8 Ti./(Ba+Sr)T-S 55mm Substrate distance (mm) 3.4 Ti mm 60 mm MgO(200) (101) Pt(200) (002) Intensity (202) TiO 2 (003) (001) (202) q (deg.) Intensity (arb. units) 55 mm (003) Intensity (202) (003) 55 mm 50 mm q (deg.) 50 mm (202) Intensity q (deg.) TiO 2 (003) 3.5T-S XRD 3.6 XRD 2 q (deg.)
29 T-S XRD 3.6 XRD T-S 55mm XRD (Ba0.8Sr0.2)TiO3 T-S 50 60mm TiO2 TiO2 3.4 T-S 50 60mm Ti Ti TiO2 3.7 XRD FWHM T-S 55mm (001) Ba0.8Sr0.2TiO3 Pt XRD Pt T-S 55mm (001)/(001)+(101) FWHM Substrate distance (mm) 3.7XRD FWHM Ar O2 Ba0.8Sr0.2TiO3 T-S 55mm 0.5Pa 3.8 Ar O2 Ar O2 T-S 1.4 Ba/(Sr+Sr) Ti/(Ba+Sr) 0.8 O2 25 Ba/(Ba+Sr) O 2 /(Ar+O 2 ) (%) Ba/(Ba+Sr) Ti/(Ba+Sr) 3.8Ar/O Ti/(Ba+Sr)
30 O (11) 3.9 XRD O2 FWHM (001)/(001)+(101) O 2 /(Ar+O 2 ) (%) 3.9XRD FWHM FWHM 3.10 SEM SEM 25 O 2 : 20 % O 2 : 25 % O 2 : 33 % O 2 : 50 % O SEM Ba0.8Sr0.2TiO3-27 -
31 T-S 55mmAr/O2=3/ Ba/(Ba+Sr)1.5Pa 1.5Pa Pa Ba/(Ba+Sr)=0.72 Ti/(Ba+Sr) BaSrTiO (12) O Ti O Ti (001)/(001)+(101) FWHM XRD FWHM Ba/(Ba+Sr) Pressure (Pa) 3.12 XRD 3.13 SEM FWHM 2.5Pa 1.5Pa 1Pa 0.5Pa SEM Ba/(Ba+Sr) Ti/(Ba+Sr) Pressure (Pa) Ti/(Ba+Sr)
32 0.5Pa 2.5 Pa 1.5 Pa 1.0 Pa 0.5 Pa SEM BaTiO3 SrTiO3 Pt(100)/MgO(100) (BaxSr1-x)TiO3 (Ba0.8Sr0.2)TiO3 3.2 BaTiO3 (Ba0.9Sr0.1)TiO3 (Ba0.8Sr0.2)TiO3 (Ba0.7Sr0.3)TiO3 (Ba0.6Sr0.4)TiO3(Ba0.5Sr0.5)TiO3 3.2 (BaxSr1-x)TiO3 (Ba0.9Sr0.1)TiO3 Substrate Pt(100)/MgO(100) STO pellet/bto target 30 % Temperature 546 T-S distance 50 cm RF Power 90 W Pressure 0.5 Pa Ar : O2 3 :1 (Ba0.8Sr0.2)TiO3 Substrate Pt(100)/MgO(100) STO pellet/bto target 36 % Temperature 546 T-S distance 55 cm RF Power 90 W Pressure 0.5 Pa Ar : O2 3 :1-29 -
33 (Ba0.7Sr0.3)TiO3 Substrate Pt(100)/MgO(100) STO pellet/bto target 47 % Temperature 546 T-S distance 60 cm RF Power 90 W Pressure 1.5 Pa Ar : O2 3 :1 (Ba0.6Sr0.4)TiO3 Substrate Pt(100)/MgO(100) STO pellet/bto target 53 % Temperature 546 T-S distance 55 cm RF Power 90 W Pressure 0.5 Pa Ar : O2 3 :1 (Ba0.5Sr0.5)TiO3 Substrate Pt(100)/MgO(100) STO pellet/bto target 54 % Temperature 546 T-S distance 50 cm RF Power 90 W Pressure 1.5 Pa Ar : O2 3 :1 BaTiO3 Substrate Pt(100)/MgO(100) STO pellet/bto target 0 % Temperature 546 T-S distance 57 cm RF Power 250 W Pressure 0.8 Pa Ar : O2 3 :1 30
34 (1) K. Koyama, T. Sakuma, S. Yamammichi, H. Watanabe and H. Aoki IDEM ~826. (1991) (2) Won-Jae Lee, Young-Min Kim and Ho-Gi Kim Thin Solid Films ~79 (1995) (3) H. N. Al-Shareef, D. Dimons, T. J. Boyle, W. L. Warren, and B. A. Tuttle Appl. Phys. Lett. 68 (5) (1996) (4) S. Matsubara, T. Sakuma, S. Yamamichi and Y. Miyasaka. Mat. Res. Soc. Symp. Proc. 200, 243 (1990) (5) T. hata, S. Kawagoe, W. Zhang, K. sakai and Y. Yoshioka Vacuum Vol.51 No. 665~671 (1998) (6) Jr-Deok Kim, S. Kawagoe, K. Sasaki and T. Hata Jpn. J. Appl. Phys. Vol.38 (1999) (7),,, (1999) (8) Y. Yoshimura, K. Hamaishi, Y. Kamino and S. Nakamura Sutudy of substrate and electrode materials on ferroelectric films (1999) (9),, 70 9 (2001) (10),,, (1998) (11),,, (1991) (12) Ludmila Eckertova,,, (1994) 31
35 4 (BaxSr1-x)TiO3 4.1 LSI Dynamic Random Access Memory(DRAM) (1) DRAM Pb(Zr,Ti)O3(PZT)SrTiO3 (BaxSr1-x)TiO3 (BaxSr1-x)TiO3 SrTiO3 Ba Sr PZT (2) (Ba,Sr)TiO3 BaTiO3 SrTiO3 Ba/(Ba+Sr) Ba/(Ba+Sr)(BaxSr1-x)TiO3 (BaxSr1-x)TiO3 Ba/(Ba+Sr)(BaxSr1-x)TiO3 4.2(BaxSr1-x)TiO3 32
36 Pt(100)/MgO(100)x=1.0~0.5 (BaxSr1-x)TiO3 XRD (001) (002) MgO(200) Pt(200) BaTiO BaTiO3 (003) (Ba0.9Sr0.1)TiO3 (Ba0.8Sr0.2)TiO3 ( (Ba 0.9 Sr 0.1 )TiO 3 =1.0~0.8) (001) c (Ba0.7Sr0.3)TiO3 (Ba0.6Sr0.4)TiO3 Intensity (arb. units) (Ba0.5Sr0.5)TiO3 (x=0.7~0.5) (Ba 0.8 Sr 0.2 )TiO 3 (Ba 0.7 Sr 0.3 )TiO 3 (110) (100) (220) (Ba 0.6 Sr 0.4 )TiO 3 (110) Pt (Ba 0.5 Sr 0.5 )TiO 3 (BaxSr1-x)TiO3 (001) (100) x=0.7~ (BaxSr1-x)TiO3 Glass (BaxSr1-x)TiO3(x=1.0~0.5)XRD q (deg.) XRD (BaxSr1-x)TiO3 (BaxSr1-x)TiO3 BaTiO 3 (112) (101) (001) (002) (111) ( ) XRD BaTiO3 Sr (110) Intensity (relative) (Ba 0.8 Sr 0.2 )TiO 3 (Ba 0.7 Sr 0.3 )TiO Pt(100) (Ba 0.6 Sr 0.4 )TiO 3 (101) (Ba 0.9 Sr 0.1 )TiO 3 (Ba0.5Sr0.5)TiO3(x=1.0~0.5)x=1.0~0.8 (001) (Ba 0.5 Sr 0.5 )TiO 3 (200) x=0.7~ q (deg.) Sr 4.2(BaxSr1-x)TiO3/Glass (110) XRD 33
37 Intensity (001) BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO 3 (Ba 0.7 Sr 0.3 )TiO 3 (Ba 0.6 Sr 0.4 )TiO 3 (Ba 0.5 Sr 0.5 )TiO 3 Lattice Parameter (nm) Tetragonal Cubic a axis c axis (100) q (deg.) (Ba x Sr 1-x )TiO 3 (x from 1.0 to 0.5) 4.3XRD Ba Sr (BaxSr1-x)TiO3 4.1 XRD (BaxSr1-x)TiO3 Sr 0.7 x0.5 (001) (100) XRD 2? a c 4.4 x0.8 a Sr x0.7 a (c/a)1 x=0.8~0.7 Sr SrTiO3 4.3(BaxSr1-x)TiO3 (BaxSr1-x)TiO3(x=1.0~0.5) 4.5 E(TO) cm cm cm -1 A1(TO1) A1(TO2) A1(TO3) (3) A1(TO1)A1(TO2) 34
38 4.6 A1(TO2) A1(TO1) A1(TO2) TiO6 Ba Sr (4) Ti 4+ Ba 2+, Sr 2+ O 2- Intensity (arb. units) E A 1 (TO 1 ) 1 (TO 1 ) A 1 (TO 2 ) A 1 (TO 3 ) BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO 3 (Ba 0.7 Sr 0.3 )TiO ;; (Ba 0.6 Sr 0.4 )TiO (Ba 0.5 Sr 0.5 )TiO 3 - A1(TO1) A1(TO2) 4.5(BaxSr1-x)TiO3 4.6A1(TO1)A1(TO2) 4.5 (BaxSr1-x)TiO3 Sr Sr Ti (4) (BaxSr1-x)TiO3 4.7 (BaxSr1-x)TiO3 (x=1.0~0.8) A1(TO1)A1(TO2) Raman shift (cm -1 ) A1(TO1) x= x<0.8 (Ba0.5Sr0.5)TiO3 A1(TO1) Raman Shift (cm -1 ) A 1 (TO 2 ) A1(TO2) x=1.0~0.7 x< A1(TO1),A1(TO2) 160 (Ba x Sr 1-x )TiO 3 (x from 1.0 to 0.5) A 1 (TO 1 ) 35
39 A1(TO1) A1(TO2) 0.6 Ba/(Ba+Sr) 4.8 A1(TO2) A1(TO1) x=1.0~ A1(TO1)A1(TO2) x<0.7 Sr A1(TO2) Sr A1(TO2) A1(TO1)A1(TO2) 4.7 A1(TO1)A1(TO2) Ba/(Ba+Sr)x=0.5 A1(TO2) A1(TO1) A1(TO1) A1(TO2) 2 x=0.7 A 1 (TO 2 )/( A 1 (TO 1 )+A 1 (TO 2 ) ) (Ba x Sr 1-x )TiO 3 (x from 1.0 to 0.5) 4.4(BaxSr1-x)TiO ()
40 (6) G (7) (8) 4.9 (BaxSr1-x)TiO3(x=1.0~0.5) E 1 (TO 1 ) 4.7 x= x< Raman Shift (cm -1 ) (Ba x Sr 1-x )TiO 3 (x from 1.0 to 0.5) 37
41 ( ) 4.9 ( ) (BaxSr1-x)TiO3 (x=1.0~0.5) Ba Sr A 4.9 Sr (BaxSr1-x)TiO3 XRD x=0.8~ Ba/(Ba+Sr) (BaxSr1-x)TiO3 (x=1.0~0.5) Pt(100)/MgO(100) (BaxSr1-x)TiO3 (x=1.0~0.5) 600 Au 4.10 Ba/(Ba+Sr) Sr Dielectric Constant Ba/(Ba+Sr)= Ba/(Ba+Sr)4.10Ba/(Ba+Sr) (BaxSr1-x)TiO Sr SrTiO3 BaTiO3 (9) BaTiO3 SrTiO3 (BaxSr1-x)TiO3 Sr SrTiO3 (Ba0.6Sr0.4)TiO3 4.2 Sr SrTiO3 (Ba/(Ba+Sr)0.8) (Ba/(Ba+Sr)0.7) SrTiO3 (BaxSr1-x)TiO3 Ba/(Ba+Sr) 0 (Ba x Sr 1-x )TiO 3 (x from 1.0 to 0.5) 38
42 (Ba0.6Sr0.4)TiO3 (BaxSr1-x)TiO3 (x=1.0~0.5) (Ba0.6Sr0.4)TiO Hz~1MHz Dielectric Constant Loss Tangent k 10k 100k 1M Frequency (Hz) 100 1k 10k 100k 1M Frequency (Hz) (Ba0.6Sr0.4)TiO3 (Ba0.6Sr0.4)TiO nm nm 50nm ( > ) ( ) (10)(11) ( ) Dielectric Constant Thickness (nm) (Ba0.6Sr0.4)TiO3 4.14
43 4.6 Ba/(Ba+Sr)(BaxSr1-x)TiO3 4.1 (BaxSr1-x)TiO3 Sr XRD (BaxSr1-x)TiO3 x=0.8~0.7 Ba/(Ba+Sr) (BaxSr1-x)TiO3 Sr SrTiO3 Ba/(Ba+Sr) (Ba0.6Sr0.4)TiO3 4.1(BaxSr1-x)TiO3(x=1.00.5)substrate : Pt(100)/MgO(100) x (XRD) (001) (001) (001) (110) (110) (110) (110) (110) (110) c/a
44 (1) D. E. Kotecki, J. D. Baniecki, H. Shen, R.B. Laibowitz, J.J. Lian and T. M. Shaw IBM. RES. Delop. Vol. 43 No. 3 (1999) (2) R. Liedtke, S. Hoffmann, M. Grossmann and R. Waser STW, :044 (1999) (3) Qin-yu He, Xin-gui Tang, J.X. Zhang and Ming-mei Wu NanoStructured Materials, Vol. 11, No 2, pp , 1999 (4) Shou-Yi Kuo, Wen-Yi Liao and Wen-Feng Hsieh Physical Review B, Vol 64, (5),,, (1997) (6) Yu. I. Yuzyuk, A. Almedia, M. R. Chaves, V. A. Alyshin, I. N. Zakharchenko and E. V. Svirdov phys. Stat. sol. 2222, 535 (2000) (7) R. Naik and J. J. Nazarko Physical Review B Vol. 61, No. 17 (2000) (8) D. A. Tenne, A. M. Clark, A. R. James, K. chen and X. X. Xi Appl. Phys. Lett. Vol. 79, No23, (2001) (9),, (10),, Vol. 17, No. 11, pp. 660~665, (1996) (11) T. Horikawa, N. Mikami, H. Ito, Y. Ohno, T. Makita and L. Sato, IEICE Trans. Elwctron. E77-C p. 385 (1994) 41
45 5 Ti/(Ba+Sr) 5.1 (Ba,Sr)TiO 3 BaOSrO TiO 2 11 Ba/(Ba+Sr), Ti/(Ba+Sr)=1 (Ti/(Ba+Sr)1) 5.2Ti/(Ba+Sr) Ba Sr Ti (Ti/(Ba+Sr)<1)30 XRD Ti/(Ba+Sr)< Ti Intensity BST(101) BaO(200) (Ba 0.8 Sr 0.2) TiO 3 BaO BaO, SrO TiO 2 BaO TiO 2 (Ba 0.8 Sr 0.2) TiO 3 BaO 5.2 Ti (Ti/(Ba+Sr)>1) q (deg.) 5.1Ti XRD Ti/(Ba+Sr)>1.0 XRD 5.1 Ti (Ba 0.8 Sr 0.2) TiO 3 TiO 2 Intensity BST(003) TiO 2 (112) Ti BaO SrO TiO q (deg.) 5.2Ti XRD 42
46 TiO 2 (Ba 0.8 Sr 0.2) TiO 3 TiO 2 Ba,Sr Ti (Ba,Sr)TiO 3 Ti/(Ba+Sr)0.87~1.72 XRD Ti/(Ba+Sr)=1.0 Ba,Sr Ti Ti FWHM (deg.) Ti/(Ba+Sr) 5.3 Ti/(Ba+Sr) FWHM 5.3Ti/(Ba+Sr) Ti/(Ba+Sr) AFM 5.4 Ti/(Ba+Sr)=1.0 RMS Ti Ti/(Ba+Sr)<1.0 Ti/(Ba+Sr)=1.0 Ti Ti/(Ba+Sr)>1.0 Ti/(Ba+Sr)=1.15 RMS Ti Ti/(Ba+Sr)1.4 RMS 43
47 2 µm 2 µm 2 µm Ti/(Ba+Sr)= 0.87 Ti/(Ba+Sr)=0.87 Ti/(Ba+Sr)= 1.15 Ti/(B+Sr)= RMS : 12 µm 2 µm µm 0 2 µm RMS : 5 µm Ti/(B+Sr)=1.72 Ti/(B+Sr)= RMS : 5 µm 2 µm 2 µm 2 µm 2 µm Ti/(B+Sr)=1.4 0 RMS : 10 µm 0 RMS : 5 µm 0 2 µm RMS : 5 µm 2 µm 図 5.4 Ti/(Ba+Sr)の組成ずれに対する AFM 像 5.4 Ti/(Ba+Sr)比の組成ずれによる誘電率の変化 Ti/(Ba+Sr)比の組成ずれに対する誘 電率の変化を図 5.5 に示す それぞれ の膜厚は 200nm とした この図から Ti が不足している膜では誘電率が約 360 で あ り 化 学 量 論 組 成 で あ る Dielectric constant Ti/(Ba+Sr)=1.0(e=320)よりわずかに大 きくなっていることがわかる 一方 Ti/(Ba+Sr) Ti リ ッ チ な 膜 に お い て は 図 5.5 Ti/(Ba+Sr)の組成ずれに対する誘電率 Ti/(Ba+Sr)=1.15 の時 誘電率が 420 で 極大を示し それ以降は誘電率が低下し一定となることがわかった Ti/(Ba+Sr)= の膜において それぞれ(Ba 0.8Sr0.2) TiO 3 と BaO 及び(Ba0.8Sr0.2) TiO 3 と TiO 2 とが混在し結晶性 44
48 (1) 5.4 AFM Ti/(Ba+Sr)=1.0 Ti/(Ba+Sr)= Ti/(Ba+Sr)=1.0 Ti/(Ba+Sr)= BaO TiO 2 (Ba 0.8 Sr 0.2) TiO 3 TiO 2 Ti/(Ba+Sr)=1.15 Ti/(Ba+Sr)=0.87 Ti/(Ba+Sr) Ti/(Ba+Sr) Ti/(Ba+Sr) 4.6 Ti/(Ba+Sr)= Ti (Ti/(Ba+Sr)>1.0)Ba,Sr Ti 5.6Ti/(Ba+Sr) XRD FWHM Ti Ti Ti Loss Tangent Ti/(Ba+Sr) 45
49 4.6 Ti/(Ba+Sr) Ti/(Ba+Sr) (Ba 0.8 Sr 0.2) TiO 3 BaO Ti (Ba 0.8 Sr 0.2) TiO 3 TiO 2 Ti/(Ba+Sr) (1),, 46
50 6 (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO 3 Ba Sr DRAM(Dynamic Random Access Memory) (1)(2) BaTiO (3) A Ba Sr Pt (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 6.2(Ba x Sr 1-x )TiO 3 BaTiO 3 Ba Sr c a c ( ) (Ba x Sr 1-x )TiO 3 x (4) (Ba x Sr 1-x )TiO 3 A Ba Sr Ba/(Ba+Sr)x 47
51 ac Pt (Ba x Sr 1-x )TiO 3 c ( ) (Ba x Sr 1-x )TiO 3 Ba x=1.0~0.8 c/a1.0 Ref : B. A. Baumert, D. D. J. J. Taylor, T. T. Otsuki Otsuki and and K. suu K. Suu, J. Appl. J.Appl. Phys. Phys. 82 (1997) 82, (Ba x Sr 1-x )TiO 3 (001) (Ba x Sr 1-x )TiO 3 x=1.0~0.8 x (Ba x Sr 1-x )TiO (Ba x Sr 1-x )TiO 3 (x=1.00.8) 60nm~600nm c a Lattice Constant a (nm) BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO 3 Lattice Constant c (nm) BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO Thickness (nm) Thickness (nm) 6.2 a c 48
52 a c Pt(Ba x Sr 1-x )TiO 3 (x=1.0~0.8) (Ba x Sr 1-x )TiO 3 (x=1.0~0.8) a c 6.1 Pt (Ba x Sr 1-x )TiO % BaTiO 3 c 50300nm 300nm c 1.60%1.38% (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO 3 c 400nm c 6.1 x (%) µm BaTiO 3 60 nm 130 nm 230 nm 320 nm 450 nm 0µm 0µm 2µm 2µm (Ba 0.9 Sr 0.1 )TiO 3 60 nm 130 nm 230 nm 320 nm 450 nm 0µm 0µm 2µm 2µm (Ba 0.8 Sr 0.2 )TiO 3 60 nm 130 nm 230 nm 320 nm 450 nm 0µm 0µm 2µm 6.3 AFM 49
53 6.3 AFM x= BaTiO 3 230nm BaTiO 3 Pt (Ba x Sr 1-x )TiO 3 (x= ) Pt (Ba x Sr 1-x )TiO 3 (x=1.0~0.8)a c (Ba x Sr 1-x )TiO 3 (x=1.0~0.8) (5) 6.4 A 1 (TO 2 ) (Ba x Sr 1-x )TiO 3 (x=1.0~0.8) A 1 (TO 2 ) (Ba x Sr 1-x )TiO 3 (x=1.0~0.8) 300 BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 300nm Raman Shift (cm -1 ) Thickness (nm) A 1 (TO 2 ) BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO
54 ( ) ( ) (6) 6.6 (Ba x Sr 1-x )TiO 3 (x=1.00.8) 450 nm 450 nm 450 nm T c = 147 o C T c = 140 o C 320 nm 320 nm 320 nm Dielectric Constant 230 nm 130 nm T c = 75 o C Dielectric Constant 230 nm 130 nm T c = 195 o C T c = 156 o C Dielectric Constant 230 nm 130 nm T c = 174 o C T c = 184 o C T c = 128 o C T c = 200 o C T c = 200 o C 60 nm 60 nm 60 nm T c = 140 o C Temperature ( o C) T c = 207 o C Temperature ( o C) Temperature ( o C) T c = 204 o C
55 (Ba x Sr 1-x )TiO 3 (x=1.00.8) Curie-Weiss C + ( T T ( T c ) e (T-T c ) 6.7 (Ba x Sr 1-x )TiO 3 (x=0.8, 0.9) 130 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO ( 60nm) ( )( (6) Pt (Ba x Sr 1-x )TiO 3 c (Ba x Sr 1-x )TiO 3 (x=1.0) BaTiO 3 230nm CCurie T c ε = ε 0 T c 52 ) Temperature ( o C) Temperature ( o C) Temperature ( o C) (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.9 Sr 0.1 )TiO 3 bulk Thickness (nm) Thickness (nm) (Ba 0.8 Sr 0.2 )TiO 3 (Ba 0.8 Sr 0.2 )TiO 3 bulk Thickness (nm) BaTiO 3 BaTiO 3 bulk 6.7
56 320nm 6.2 a c 6.4 (Ba x Sr 1-x )TiO 3 (x=1.0)320nm Pt BaTiO 3 (7) Devonshire BaTiO 3 (8) G P (9)(10) G = χp + ς 11P + ξ111 P 6 2Q 12 HP P E P = ε ( ε r 1)E 0 e 0 e r E (P=0) G? 1 ε ( 0 ε r 1)? 53
57 P 2 P 4 P 6 ( ) P P -P? T χ = ( T T0) Cε 0 Curie-Weiss T Curie-Weiss T 0? ( ) ( ) G P P s BaTiO 3 P (1) H = X 1 = X 2 (X1X2 xy ) H Q ij P j x i 1 P 2 (10) P s (Ba x Sr 1-x )TiO 3 (x=1.0~0.8) (9)(12)(13)(14) 2 Q ij = P j
58 (P s 0) (Ba x Sr 1-x )TiO 3 (x=1.0~0.8) 1 (15) BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO T c : Curie Temperature 0.30 T c : Curie Temperature 0.30 T c : Curie Temperature Polarization (C/m 2 ) Ferroelectric Phase -1.0 GPa -0.5 GPa -1.5 GPa -2.0 GPa Polarization (C/m 2 ) Ferroelectric Phase -1.0 GPa -0.5 GPa -1.5 GPa -2.0 GPa Polarization (C/m 2 ) Ferroelectric Phase -2.0 GPa -1.5 GPa -1.0 GPa -0.5 GPa 0.05 Pararroelectric Phase 0.05 Pararroelectric Phase 0.05 Pararroelectric Phase T c T c T c T c Temperature ( o C) T c T c T c T c Temperature ( o C) T c T c T c T c Temperature ( o C) 6.8 P s (BaTiO 3 ) 97 ((Ba 0.9 Sr 0.1 )TiO 3 )65((Ba 0.8 Sr 0.2 )TiO 3 ) 4050/0.5GPa (Ba x Sr 1-x )TiO 3 (x=1.00.8) (1) 6.10 (Ba x Sr 1-x )TiO 3 (x=1.0~0.8) 60nm Compression Stress (GPa) 0.0 BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO Curie Temperature ( o C)
59 BaTiO 3 240nm 0.0 a 240nm Pt (Ba x Sr 1-x )TiO 3 A Sr (Ba x Sr 1-x )TiO 3 Tensile Stress Stress (GPa) Compression Stress Pt (Ba x Sr 1-x )TiO 3 c (Ba x Sr 1-x )TiO Thickness (nm) BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO (Ba x Sr 1-x )TiO 3 (x=1.00.8) (Ba x Sr 1-x )TiO 3 (x=1.00.8)/pt(100)/mgo(100) Au Sawyer-Tower 6.11 (x= ) BaTiO 3 (Ba x Sr 1-x )TiO 3 (x=0.9, 0.8) 6.10 BaTiO 3 0.1GPa c (Ba x Sr 1-x )TiO 3 (x=0.9, 0.8) 1.1GPa1.5GPa BaTiO 3 (Ba 0.8 Sr 0.2 )TiO 3 c 56
60 c (Ba x Sr 1-x )TiO 3 (x=0.9, 0.8) 60nm (Ba x Sr 1-x )TiO nm BaTiO 3 (Ba 0.9 Sr 0.1 )TiO 3 (Ba 0.8 Sr 0.2 )TiO nm nm P (m C/cm 2 ) 0-5 P ( mc/cm 2 ) 0.0 P (m C/cm 2 ) E (kv/cm) E (kv/cm) E (kv/cm) nm nm nm P (m C/cm 2 ) 0-10 P (m C/cm 2 ) 0-2 P (m C/cm 2 ) E (kv/cm) E (kv/cm) E (kv/cm) nm nm nm P (m C/cm 2 ) 0-20 P (m C/cm 2 ) 0-2 P (m C/cm 2 ) E (kv/cm) E (kv/cm) E (kv/cm) nm nm nm P (m C/cm 2 ) P (m C/cm 2 ) 0-20 P (m C/cm 2 ) E (kv/cm) E (kv/cm) E (kv/cm) 6.11 P-E 57
61 6.3 A Ba Sr Pt(Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 P-E (Ba x Sr 1-x )TiO 3 (x=1.00.8) 58
62 (1) E. Fujii, et al IDEM Tech. Dig (1992) (2) Y. Ohno, et al Symp. on VLSI Tech., Dig. Of Tech. Papers 149. (1994) (3), (Ba,Sr)TiO3 DRAM (4) B. A. Baumert, D. J. Taylor, T. Otsuki and K. suu J. Appl. Phys. 82 (1997) (5),,, (1988) (6),, (1997) (7) Uma D. Venkateswaran, Vaman M. Naik and Ratna Naik Physical Review B Vol. 58 No. 21 (1998) (8) A. F. Devonshire Philos. Mag. 40, 1040 (1949) (9) K. Abe, N. Yanase, S. Komatsu, K. Sano and T. Kawakubo (1998) (10) T. Shimizu, T. Kawakubo 70 1 (2001) (11),,, (2002) (12) N. A. Pertsev, A. G. Zembilgotov, S. Hoffmann, R. Waser and A. K. Tagantsev J. Appl. Phys. Vol. 85 No. 3 (1999) (13) Sylvie. Bernhardt, Lauren Mize, Philippe Delaye and Gerald Roosen J. Appl. Phys. Vol. 92, No. 10, (2002) (14) Na Sai, Karin M, Rabe and David Vanderbilt Physical Review B 66, (2002) (15),, (2001) 59
63 7 (Ba x Sr 1-x )TiO 3 (x=1.0~0.5) (Ba x Sr 1-x )TiO 3 (x=1.0~0.5) (Ba x Sr 1-x )TiO 3 BaTiO 3 SrTiO 3 Pt(100)/MgO(100)SrTiO 3 (Ba x Sr 1-x )TiO 3 SrTiO 3 SrTiO 3 (Ba x Sr 1-x )TiO 3 (x=1.0~0.5) (Ba x Sr 1-x )TiO 3 (x=1.0~0.5) (Ba x Sr 1-x )TiO 3 (x=1.0~0.5)x=0.7 (001) (100) x=0.8~0.7 (Ba 0.6 Sr 0.4 )TiO 3 SrTiO 3 (Ba x Sr 1-x )TiO 3 BaO TiO 2 Ba x Sr 1-x )TiO 3 60
64 (Ba x Sr 1-x )TiO 3 A Ba Sr Pt (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 Pt (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 (x=1.00.8) (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 (Ba x Sr 1-x )TiO 3 61
65 1. *,,,,, Pt BaTiO P-n *,,, (Ba x Sr 1-x )TiO
66 63 2
PE-CVD X PTO Sawyer-tower 3.1 PTO Sawyer-tower Sawyer-tower a c 25
PbTiO3(PTO) 14 2 5 1.1 1 1.2 2 2.1 PE-CVD 3 2.2 X 7 2.3 9 2.4 10 2.5 12 2.6 13 PTO Sawyer-tower 3.1 PTO 14 3.2 Sawyer-tower 16 3.2.1 3.2.2 Sawyer-tower 3.3 20 4.1 a c 25 4.2 26 4.3 27 4.4 27 5.1 34 1.1
fma20.PDF
PZT TSC Measurement for Degraded and Damaged PZT Thin Films Capacitors Prepared by Sputtering. FeRAM MFIS : XRD, TEM : XRF, EDS, EPMA, SIMS : SPM, NDM? DLTS DLTS (TSC) (TSC) fatigue,, ( ) (1) (2) J T TSC
C-2 NiS A, NSRRC B, SL C, D, E, F A, B, Yen-Fa Liao B, Ku-Ding Tsuei B, C, C, D, D, E, F, A NiS 260 K V 2 O 3 MIT [1] MIT MIT NiS MIT NiS Ni 3 S 2 Ni
![C-2 NiS A, NSRRC B, SL C, D, E, F A, B, Yen-Fa Liao B, Ku-Ding Tsuei B, C, C, D, D, E, F, A NiS 260 K V 2 O 3 MIT [1] MIT MIT NiS MIT NiS Ni 3 S 2 Ni](/thumbs/89/99121913.jpg "C-2 NiS A, NSRRC B, SL C, D, E, F A, B, Yen-Fa Liao B, Ku-Ding Tsuei B, C, C, D, D, E, F, A NiS 260 K V 2 O 3 MIT [1] MIT MIT NiS MIT NiS Ni 3 S 2 Ni")
M (emu/g) C 2, 8, 9, 10 C-1 Fe 3 O 4 A, SL B, NSRRC C, D, E, F A, B, B, C, Yen-Fa Liao C, Ku-Ding Tsuei C, D, D, E, F, A Fe 3 O 4 120K MIT V 2 O 3 MIT Cu-doped Fe3O4 NCs MIT [1] Fe 3 O 4 MIT Cu V 2 O 3
1).1-5) - 9 -
- 8 - 1).1-5) - 9 - ε = ε xx 0 0 0 ε xx 0 0 0 ε xx (.1 ) z z 1 z ε = ε xx ε x y 0 - ε x y ε xx 0 0 0 ε zz (. ) 3 xy ) ε xx, ε zz» ε x y (.3 ) ε ij = ε ij ^ (.4 ) 6) xx, xy ε xx = ε xx + i ε xx ε xy = ε
<4D F736F F D B B83578B6594BB2D834A836F815B82D082C88C60202E646F63>
マイクロメカトロニクス サンプルページ この本の定価 判型などは, 以下の URL からご覧いただけます. http://www.morikita.co.jp/books/mid/077331 このサンプルページの内容は, 初版 1 刷発行当時のものです. 1984.10 1986.7 1995 60 1991 Piezoelectric Actuators and Ultrasonic Motors
スライド 1
High-k & Selete 1 2 * * NEC * # * # # 3 4 10 Si/Diamond, Si/SiC, Si/AlOx, Si Si,,, CN SoC, 2007 2010 2013 2016 2019 Materials Selection CZ Defectengineered SOI: Bonded, SIMOX, SOI Emerging Materials Various
修士論文
SAW 14 2 M3622 i 1 1 1-1 1 1-2 2 1-3 2 2 3 2-1 3 2-2 5 2-3 7 2-3-1 7 2-3-2 2-3-3 SAW 12 3 13 3-1 13 3-2 14 4 SAW 19 4-1 19 4-2 21 4-2-1 21 4-2-2 22 4-3 24 4-4 35 5 SAW 36 5-1 Wedge 36 5-1-1 SAW 36 5-1-2
1-x x µ (+) +z µ ( ) Co 2p 3d µ = µ (+) µ ( ) W. Grange et al., PRB 58, 6298 (1998). 1.0 0.5 0.0 2 1 XMCD 0-1 -2-3x10-3 7.1 7.2 7.7 7.8 8.3 8.4 up E down ρ + (E) ρ (E) H, M µ f + f E F f + f f + f X L
03J_sources.key
Radiation Detection & Measurement (1) (2) (3) (4)1 MeV ( ) 10 9 m 10 7 m 10 10 m < 10 18 m X 10 15 m 10 15 m ......... (isotope)...... (isotone)......... (isobar) 1 1 1 0 1 2 1 2 3 99.985% 0.015% ~0% E
Frontier Simulation Software for Industrial Science
PACS-CS FIRST 2005 2005 2 16 17 2 28 2 17 2 28 3 IT IT H14~H16 CHASE CHASE-3PT Protein Protein-DF ABINIT-MP 17 2 28 4 CMOS Si-CMOS CMOS-LSI CMOS ATP 10nm 17 2 28 5 17 2 28 6 CMOS CMOS-LSI LSI 90nm CMOS
JIS Z803: (substitution method) 3 LCR LCR GPIB
LCR NMIJ 003 Agilent 8A 500 ppm JIS Z803:000 50 (substitution method) 3 LCR LCR GPIB Taylor 5 LCR LCR meter (Agilent 8A: Basic accuracy 500 ppm) V D z o I V DUT Z 3 V 3 I A Z V = I V = 0 3 6 V, A LCR meter
36 th IChO : - 3 ( ) , G O O D L U C K final 1
36 th ICh - - 5 - - : - 3 ( ) - 169 - -, - - - - - - - G D L U C K final 1 1 1.01 2 e 4.00 3 Li 6.94 4 Be 9.01 5 B 10.81 6 C 12.01 7 N 14.01 8 16.00 9 F 19.00 10 Ne 20.18 11 Na 22.99 12 Mg 24.31 Periodic
E-2 A, B, C A, A, B, A, C m-cresol (NEAT) Rh S m-cresol m-cresol m-cresol x x x ,Rh N N N N H H n Polyaniline emeraldine base E-3 II
E 7, 8, 9 E-1 A, B B A, A, A,, [Novoselov, et al., Science 306, 666, (2004)].,,,.,,,.,. (t a, t b, t c ), [PRB.74, 033413, (2006)],.,, t b /t a t c /t a 0.5., [Ni, etal., ACS, Nano2, 2301, (2008)],, [Zhou
untitled
254nm UV TiO 2 20nm :Sr 5 Ta 4 O 15 3 4 KEY-1 KEY-2 (Ti,Nb,Ta) 5 KEY-1 KEY-2 6 7 NiO/ Sr 2 Ta 2 O 7 mmol h -1 g -1 20 15 10 5 H 2 O 2 H 2 O 2 0 0 2 4 6 8 10 12 NiO/Sr 2 Ta 2 O 7 The synthesis of photocatalysts
微粒子合成化学・講義
http://www.tagen.tohoku.ac.jp/labo/muramatsu/mura/main.html E-mail: mura@tagen.tohoku.ac.jp 1 2 3 1m 10cm 1cm 1mm 100 m 10 m 1 m 100nm 10nm 1nm 1 100 m 10 m 1 m 1nm 100nm 10nm 4 5 6 7 1m 10cm 1cm 1mm 100
16 (16) poly-si mJ/cm 2 ELA poly-si super cooled liquid, SCL [3] a-si poly-si [4] solid phase crystalization, SPC [5] mJ/cm 2 SPC SCL (di
![16 (16) poly-si mJ/cm 2 ELA poly-si super cooled liquid, SCL [3] a-si poly-si [4] solid phase crystalization, SPC [5] mJ/cm 2 SPC SCL (di](/thumbs/82/84964999.jpg "16 (16) poly-si mJ/cm 2 ELA poly-si super cooled liquid, SCL [3] a-si poly-si [4] solid phase crystalization, SPC [5] mJ/cm 2 SPC SCL (di")
(15) 15 ELA により形成された poly-si 結晶成長様式 - グレイン形状と水素の関係 - Crystal Growth Mode of Poly-Si Prepared by ELA -Relationship between the Grain Morphology and ydrogens- Naoya KAWAMOTO (Dept. of Electrical and Electronic
untitled
1 / 37 5-4 6.1 1 2 / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 2 1 3 / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 3 4 / 37 1Tbits/cm 2 HD FePt FePt 110nm
** Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025, USA) Preparation of Magnetopulmbite Type Ferrite
** Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025, USA) Preparation of Magnetopulmbite Type Ferrite Thin Films by Dip-Coating Method and Magnetic Properties
案内最終.indd
1 2 3 4 5 6 IC IC R22 IC IC http://www.gifu-u.ac.jp/view.rbz?cd=393 JR JR JR JR JR 7 / JR IC km IC km IC IC km 8 F HPhttp://www.made.gifu-u.ac.jp/~vlbi/index.html 9 Q01a N01a X01a K01a S01a T01a Q02a N02a
1 1 H Li Be Na M g B A l C S i N P O S F He N Cl A e K Ca S c T i V C Mn Fe Co Ni Cu Zn Ga Ge As Se B K Rb S Y Z Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb T e
No. 1 1 1 H Li Be Na M g B A l C S i N P O S F He N Cl A e K Ca S c T i V C Mn Fe Co Ni Cu Zn Ga Ge As Se B K Rb S Y Z Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb T e I X e Cs Ba F Ra Hf Ta W Re Os I Rf Db Sg Bh
?
240-8501 79-2 Email: nakamoto@ynu.ac.jp 1 3 1.1...................................... 3 1.2?................................. 6 1.3..................................... 8 1.4.......................................
untitled
( ) (mm) (GHz)=300( ) 30 300GHz=1 10mm ( 2GHz2Mbps) Gbps= Mbps ( m),? S G=P/Pi30dB=1000 Gm=4πS/λ 2, S= 80λ 2 Gm=30dB η=g/gm, S= 80λ 2,G=27dB η=50% (GHz) 80 70 60 50 40 30 20 10 16 19 22 25 28 31 34 37
JAJP
Agilent 7500ce ORS ICP-MS Glenn Woods Agilent Technologies Ltd. 5500 Lakeside, Cheadle Royal Business Park Stockport UK Agilent 7500ce ICP-MS 5 7500ce (ORS) 1 ORS 7500ce ORS ICP-MS ( ) 7500 ICP-MS (27.12
untitled
2013 74 Tokyo Institute of Technology AlGaN/GaN C Annealing me Dependent Contact Resistance of C Electrodes on AlGaN/GaN, Tokyo Tech.FRC, Tokyo Tech. IGSSE, Toshiba, Y. Matsukawa, M. Okamoto, K. Kakushima,
1.06μm帯高出力高寿命InGaAs歪量子井戸レーザ
rjtenmy@ipc.shizuoka.ac.jp ZnO RPE-MOCVD UV- ZnO MQW LED/PD & Energy harvesting LED ( ) PV & ZnO... 1970 1980 1990 2000 2010 SAW NTT ZnO LN, LT IC PbInAu/PbBi Nb PIN/FET LD/HBT 0.98-1.06m InGaAs QW-LD
高校生の就職への数学II
II O Tped b L A TEX ε . II. 3. 4. 5. http://www.ocn.ne.jp/ oboetene/plan/ 7 9 i .......................................................................................... 3..3...............................
2008/02/18 08:40-10:10, 12:50-14:20 14:30-16:00, 16:10-17:40,
008/0/18 08:40-10:10, 1:50-14:0 14:30-16:00, 16:10-17:40, 1pt A 1911 Leiden Heike Kammelingh-Onnes H.Kammelingh Onnes 1907 He 1 4. K H H c T c T H c Hg:40 mt, Pb:80 mt, Sn:30 mt 100 mt I c H c H c H
all.dvi
38 5 Cauchy.,,,,., σ.,, 3,,. 5.1 Cauchy (a) (b) (a) (b) 5.1: 5.1. Cauchy 39 F Q Newton F F F Q F Q 5.2: n n ds df n ( 5.1). df n n df(n) df n, t n. t n = df n (5.1) ds 40 5 Cauchy t l n mds df n 5.3: t
Part () () Γ Part ,
Contents a 6 6 6 6 6 6 6 7 7. 8.. 8.. 8.3. 8 Part. 9. 9.. 9.. 3. 3.. 3.. 3 4. 5 4.. 5 4.. 9 4.3. 3 Part. 6 5. () 6 5.. () 7 5.. 9 5.3. Γ 3 6. 3 6.. 3 6.. 3 6.3. 33 Part 3. 34 7. 34 7.. 34 7.. 34 8. 35
01-表紙.ai
B 0 5 0-5 双極子核 I=1/ 2 四極子核 I 1 e Li Be B C N F Ne Na Mg 黒字はNMR 観測不可 Al Si P S Cl Ar K Ca Sc Ti V Cr MnFe Co Ni Cu ZnGaGe As Se Br Kr RbSr Y Zr NbMoTc RuRhPdAgCd In Sn SbTe I Xe Cs Ba La f Ta W Res Ir Pt
hν 688 358 979 309 308.123 Hz α α α α α α No.37 に示す Ti Sa レーザーで実現 術移転も成功し 図 9 に示すよ うに 2 時間は連続測定が可能な システムを実現した Advanced S o l i d S t a t e L a s e r s 2016, JTu2A.26 1-3. 今後は光周波 数比計測装置としてさらに改良 を加えていくとともに
PowerPoint Presentation
/ 2008/04/04 Ferran Salleras 1 2 40Gb/s 40Gb/s PC QD PC: QD: e.g. PCQD PC/QD 3 CP-ON SP T CP-OFF PC/QD-SMZ T ~ps, 40Gb/s ~100fJ T CP-ON CP-OFF 500µm500µm Photonic Crystal SMZ K. Tajima, JJAP, 1993. Control
ごあいさつ
2004 11 7 10 00 2004 13:0014:00 16 00 2004 3 5N S24 29 34 39 44 49 54 59H1 6 11. URL 1 7 2005 2 1 1210 121 149 187 149 606 137 134 177 156 604 162 11 1 2004 2 1241 135 126 120 233 614 145 131 131 220 627
C 3 C-1 Ru 2 x Fe x CrSi A A, A, A, A, A Ru 2 x Fe x CrSi 1) 0.3 x 1.8 2) Ru 2 x Fe x CrSi/Pb BTK P Z 3 x = 1.7 Pb BTK P = ) S.Mizutani, S.Ishid
C 3 C-1 Ru 2 x Fe x CrSi A A, A, A, A, A Ru 2 x Fe x CrSi 1).3 x 1.8 2) Ru 2 x Fe x CrSi/Pb BTK P Z 3 x = 1.7 Pb BTK P =.52 1) S.Mizutani, S.Ishida, S.Fujii and S.Asano, Mater. Tran. 47(26)25. 2) M.Hiroi,
untitled
TOF ENMA JAEA-RMS) TOF Pre-scission JAERI-RMS (m-state 16 O + 27 Al 150MeV d TOF Nucl. Phys. A444, 349-364 (1985). l = m d Pre-scission Scission 10-19 (Post_scission) (Pre-scission) Proton_fission Alpha_fission
2.2 h h l L h L = l cot h (1) (1) L l L l l = L tan h (2) (2) L l 2 l 3 h 2.3 a h a h (a, h)
1 16 10 5 1 2 2.1 a a a 1 1 1 2.2 h h l L h L = l cot h (1) (1) L l L l l = L tan h (2) (2) L l 2 l 3 h 2.3 a h a h (a, h) 4 2 3 4 2 5 2.4 x y (x,y) l a x = l cot h cos a, (3) y = l cot h sin a (4) h a
1 2 2 (Dielecrics) Maxwell ( ) D H
2003.02.13 1 2 2 (Dielecrics) 4 2.1... 4 2.2... 5 2.3... 6 2.4... 6 3 Maxwell ( ) 9 3.1... 9 3.2 D H... 11 3.3... 13 4 14 4.1... 14 4.2... 14 4.3... 17 4.4... 19 5 22 6 THz 24 6.1... 24 6.2... 25 7 26
-------------------------------------------------------------------------------------------------- 1 ----------------------------------------- 3 --------------------------------------------------------------------------------
( ) ,
II 2007 4 0. 0 1 0 2 ( ) 0 3 1 2 3 4, - 5 6 7 1 1 1 1 1) 2) 3) 4) ( ) () H 2.79 10 10 He 2.72 10 9 C 1.01 10 7 N 3.13 10 6 O 2.38 10 7 Ne 3.44 10 6 Mg 1.076 10 6 Si 1 10 6 S 5.15 10 5 Ar 1.01 10 5 Fe 9.00
èCò_ï\éÜ.pdf
[Co/Ru] 20 Antiferromagnetic Exchange Coupling Energy in [Co/Ru] 20 19 1...1 1.1...1 1.2...1 1.2.1...1 1.2.2...2 1.3...2 1.4...3 1.4.1...3 1.4.2...5 1.5...5 1.5.1...5 1.5.2 SF...6 1.5.3 TAMR...6 2...8
研究成果報告書
10m 2m Ge Si BaF2 ZnSZnSe Sb-Ge-Sn-S IIR-SF1 1 2 Tungsten SilicideWSi WSi () IIR-SF 1 Sb-Ge-Sn-S 0.85~11μm2.710μm 253 C Al Al 220μm He-Cd laser 1 Exposure Photoresist WSi (a) 500 nm Development RIE WSi
untitled
Tokyo Institute of Technology high-k/ In.53 Ga.47 As MOS - Defect Analysis of high-k/in.53 G a.47 As MOS Capacitor using capacitance voltage method,,, Darius Zade,,, Parhat Ahmet,,,,,, ~InGaAs high-k ~
2 1 7 - TALK ABOUT 21 μ TALK ABOUT 21 Ag As Se 2. 2. 2. Ag As Se 1 2 3 4 5 6 7 8 9 1 1 2 3 4 5 6 7 8 9 1 1 2 3 4 5 6 7 8 9 1 Sb Ga Te 2. Sb 2. Ga 2. Te 1 2 3 4 5 6 7 8 9 1 1 2 3 4 5 6 7 8 9 1 1 2 3 4
研究室ガイダンス(H29)福山研v2.pdf
J.M. Kosterlitz and D.J. Thouless, Phys. 5, L124 (1972); ibid. 6, 1181 (1973) David J. Thouless J. Michael Kosterlitz + ρ T s KT D.J. Bishop and J.D. Reppy, PRL 40, 1727 (1978) ( ) = 2k B m2 T KT π 2 T
研究室ガイダンス(H28)福山研.pdf
1 2 3 4 5 4 He M. Roger et al., JLTP 112, 45 (1998) A.F. Andreev and I.M. Lifshitz, Sov. Phys. JETP 29, 1107 (1969) Born in 2004 (hcp 4 He) E. Kim and M.H.W. Chan, Nature 427, 225 (2004); Science 305,
main.dvi
A 1/4 1 1/ 1/1 1 9 6 (Vergence) (Convergence) (Divergence) ( ) ( ) 97 1) S. Fukushima, M. Takahashi, and H. Yoshikawa: A STUDY ON VR-BASED MUTUAL ADAPTIVE CAI SYSTEM FOR NUCLEAR POWER PLANT, Proc. of FIFTH
µµ InGaAs/GaAs PIN InGaAs PbS/PbSe InSb InAs/InSb MCT (HgCdTe)
1001 µµ 1.... 2 2.... 7 3.... 9 4. InGaAs/GaAs PIN... 10 5. InGaAs... 17 6. PbS/PbSe... 18 7. InSb... 22 8. InAs/InSb... 23 9. MCT (HgCdTe)... 25 10.... 28 11.... 29 12. (Si)... 30 13.... 33 14.... 37
6kg 1.1m 1.m.1m.1 l λ ϵ λ l + λ l l l dl dl + dλ ϵ dλ dl dl + dλ dl dl 3 1. JIS 1 6kg 1% 66kg 1 13 σ a1 σ m σ a1 σ m σ m σ a1 f f σ a1 σ a1 σ m f 4
35-8585 7 8 1 I I 1 1.1 6kg 1m P σ σ P 1 l l λ λ l 1.m 1 6kg 1.1m 1.m.1m.1 l λ ϵ λ l + λ l l l dl dl + dλ ϵ dλ dl dl + dλ dl dl 3 1. JIS 1 6kg 1% 66kg 1 13 σ a1 σ m σ a1 σ m σ m σ a1 f f σ a1 σ a1 σ m
案内（最終2）.indd
1 2 3 4 5 6 7 8 9 Y01a K01a Q01a T01a N01a S01a Y02b - Y04b K02a Q02a T02a N02a S02a Y05b - Y07b K03a Q03a T03a N03a S03a A01r Y10a Y11a K04a K05a Q04a Q05a T04b - T06b T08a N04a N05a S04a S05a Y12b -
PowerPoint プレゼンテーション
2004 3 3 2 3 4 5 6 7 8 9 10 T. Ito, A. Yamamoto, et al., J. Chem. Soc., Chem. Commun., 136 (1974) J. Chem. Soc., Dalton Trans., 1783 (1974) J. Chem. Soc., Dalton Trans., 1398 (1975) 11 T.Ito, A. Yamamoto,
LM837 Low Noise Quad Operational Amplifier (jp)
Low Noise Quad Operational Amplifier Literature Number: JAJSBB7 600 Low Noise Quad Operational Amplifier 2000 8 Converted to nat2000 DTD ds009047tl/h/9047 33020 19860602 10 V/ s ( ); 8 V/ s ( ) 25 MHz
76 3 B m n AB P m n AP : PB = m : n A P B P AB m : n m < n n AB Q Q m A B AQ : QB = m : n (m n) m > n m n Q AB m : n A B Q P AB Q AB 3. 3 A(1) B(3) C(
3 3.1 3.1.1 1 1 A P a 1 a P a P P(a) a P(a) a P(a) a a 0 a = a a < 0 a = a a < b a > b A a b a B b B b a b A a 3.1 A() B(5) AB = 5 = 3 A(3) B(1) AB = 3 1 = A(a) B(b) AB AB = b a 3.1 (1) A(6) B(1) () A(
A(6, 13) B(1, 1) 65 y C 2 A(2, 1) B( 3, 2) C 66 x + 2y 1 = 0 2 A(1, 1) B(3, 0) P 67 3 A(3, 3) B(1, 2) C(4, 0) (1) ABC G (2) 3 A B C P 6
1 1 1.1 64 A6, 1) B1, 1) 65 C A, 1) B, ) C 66 + 1 = 0 A1, 1) B, 0) P 67 A, ) B1, ) C4, 0) 1) ABC G ) A B C P 64 A 1, 1) B, ) AB AB = 1) + 1) A 1, 1) 1 B, ) 1 65 66 65 C0, k) 66 1 p, p) 1 1 A B AB A 67
LT 低コスト、シャットダウン機能付き デュアルおよびトリプル300MHz 電流帰還アンプ
µ µ LT1398/LT1399 V IN A R G 00Ω CHANNEL A SELECT EN A R F 3Ω B C 97.6Ω CABLE V IN B R G 00Ω EN B R F 3Ω 97.6Ω V OUT OUTPUT (00mV/DIV) EN C V IN C 97.6Ω R G 00Ω R F 3Ω 1399 TA01 R F = R G = 30Ω f = 30MHz
pp * Yw; Mq 1. 1L 20 cc [1] Sonoluminescence: Light emission from acoustic cavitation bubble. Pak-Kon Choi (Departm
![pp * Yw; Mq 1. 1L 20 cc [1] Sonoluminescence: Light emission from acoustic cavitation bubble. Pak-Kon Choi (Departm](/thumbs/94/118261255.jpg "pp * Yw; Mq 1. 1L 20 cc [1] Sonoluminescence: Light emission from acoustic cavitation bubble. Pak-Kon Choi (Departm")
73 7 2017 pp. 447 454 447 * 43.25.Yw; 78.60.Mq 1. 1L 20 cc [1] Sonoluminescence: Light emission from acoustic cavitation bubble. Pak-Kon Choi (Department of Physics, Meiji University, Kawasaki, 214 8571)
A
A 2563 15 4 21 1 3 1.1................................................ 3 1.2............................................. 3 2 3 2.1......................................... 3 2.2............................................
6 2 T γ T B (6.4) (6.1) [( d nm + 3 ] 2 nt B )a 3 + nt B da 3 = 0 (6.9) na 3 = T B V 3/2 = T B V γ 1 = const. or T B a 2 = const. (6.10) H 2 = 8π kc2
![6 2 T γ T B (6.4) (6.1) [( d nm + 3 ] 2 nt B )a 3 + nt B da 3 = 0 (6.9) na 3 = T B V 3/2 = T B V γ 1 = const. or T B a 2 = const. (6.10) H 2 = 8π kc2](/thumbs/92/109118076.jpg "6 2 T γ T B (6.4) (6.1) [( d nm + 3 ] 2 nt B )a 3 + nt B da 3 = 0 (6.9) na 3 = T B V 3/2 = T B V γ 1 = const. or T B a 2 = const. (6.10) H 2 = 8π kc2")
1 6 6.1 (??) (P = ρ rad /3) ρ rad T 4 d(ρv ) + PdV = 0 (6.1) dρ rad ρ rad + 4 da a = 0 (6.2) dt T + da a = 0 T 1 a (6.3) ( ) n ρ m = n (m + 12 ) m v2 = n (m + 32 ) T, P = nt (6.4) (6.1) d [(nm + 32 ] )a
表紙
Akira Fujishima 2005.Vo.3 1 Kiyoshi kanamura kanamura-kiyoshi@c.metro-u.ac.jp 2 2005.Vol.3 Rechargeable Lithium Ion-Battery Active Material Liquid Electrolyte σ = 10-2 10-3 S cm -1 3D Interface of Solid
i
i ii 1 6 9 12 15 16 19 19 19 21 21 22 22 23 26 32 34 35 36 3 37 5 5 4 4 5 iii 4 55 55 59 59 7 7 8 8 9 9 10 10 1 11 iv ozein Van Marum 1801 Cruiokshank Marum 1840 Schonbein 3 / atm 1 N 1892 50 1960 1970
a L = Ψ éiγ c pa qaa mc ù êë ( - )- úû Ψ 1 Ψ 4 γ a a 0, 1,, 3 {γ a, γ b } η ab æi O ö æo ö β, σ = ço I α = è - ø çèσ O ø γ 0 x iβ γ i x iβα i
解説 4 matsuo.mamoru jaea.go.jp 4 eizi imr.tohoku.ac.jp 4 maekawa.sadamichi jaea.go.jp i ii iii i Gd Tb Dy g khz Pt ii iii Keywords vierbein 3 dreibein 4 vielbein torsion JST-ERATO 1 017 1. 1..1 a L = Ψ
Microsoft PowerPoint - 02_資料.ppt [互換モード]
![Microsoft PowerPoint - 02_資料.ppt [互換モード]](/thumbs/91/106644253.jpg "Microsoft PowerPoint - 02_資料.ppt [互換モード]")
db log db db db log log log db log log log4 y log4 log y log log y log4 log log log y log 4 log log log y log log log log y log log y log log y log y 5V.5 m db db log db db.893 - +..5.779-3 +3.43 db(.)
(2 X Poisso P (λ ϕ X (t = E[e itx ] = k= itk λk e k! e λ = (e it λ k e λ = e eitλ e λ = e λ(eit 1. k! k= 6.7 X N(, 1 ϕ X (t = e 1 2 t2 : Cauchy ϕ X (t
![(2 X Poisso P (λ ϕ X (t = E[e itx ] = k= itk λk e k! e λ = (e it λ k e λ = e eitλ e λ = e λ(eit 1. k! k= 6.7 X N(, 1 ϕ X (t = e 1 2 t2 : Cauchy ϕ X (t](/thumbs/67/56612994.jpg "(2 X Poisso P (λ ϕ X (t = E[e itx ] = k= itk λk e k! e λ = (e it λ k e λ = e eitλ e λ = e λ(eit 1. k! k= 6.7 X N(, 1 ϕ X (t = e 1 2 t2 : Cauchy ϕ X (t")
6 6.1 6.1 (1 Z ( X = e Z, Y = Im Z ( Z = X + iy, i = 1 (2 Z E[ e Z ] < E[ Im Z ] < Z E[Z] = E[e Z] + ie[im Z] 6.2 Z E[Z] E[ Z ] : E[ Z ] < e Z Z, Im Z Z E[Z] α = E[Z], Z = Z Z 1 {Z } E[Z] = α = α [ α ]
強相関電子系ペロブスカイト遷移金属酸化物による光エレクトロニクス 平成 12 年 11 月 ~ 平成 18 年 3 月 研究代表者 : 花村榮一 ( 千歳科学技術大学光科学部 教授 )
強相関電子系ペロブスカイト遷移金属酸化物による光エレクトロニクス 平成 12 年 11 月 ~ 平成 18 年 3 月 研究代表者 : 花村榮一 ( 千歳科学技術大学光科学部 教授 ) χ αβγω χ αβγωβγ αχ χ -1 - ω ω Γ ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω ω -2 - -3 - BO 2 (Rutile) TiO 2
E 1/2 3/ () +3/2 +3/ () +1/2 +1/ / E [1] B (3.2) F E 4.1 y x E = (E x,, ) j y 4.1 E int = (, E y, ) j y = (Hall ef
![E 1/2 3/ () +3/2 +3/ () +1/2 +1/ / E [1] B (3.2) F E 4.1 y x E = (E x,, ) j y 4.1 E int = (, E y, ) j y = (Hall ef](/thumbs/81/83176619.jpg "E 1/2 3/ () +3/2 +3/ () +1/2 +1/ / E [1] B (3.2) F E 4.1 y x E = (E x,, ) j y 4.1 E int = (, E y, ) j y = (Hall ef")
4 213 5 8 4.1.1 () f A exp( E/k B ) f E = A [ k B exp E ] = f k B k B = f (2 E /3n). 1 k B /2 σ = e 2 τ(e)d(e) 2E 3nf 3m 2 E de = ne2 τ E m (4.1) E E τ E = τe E = / τ(e)e 3/2 f de E 3/2 f de (4.2) f (3.2)
X X 1. 1 X 2 X 195 3, 4 Ungár modified Williamson-Hall/Warren-Averbach 5-7 modified modified Rietveld Convolutional Multiple Whole Profile CMWP 8 CMWP
X X a a b b c Characterization of dislocation evolution during work hardening of stainless steels by using XRD line-profile analysis Tomoaki KATO a, Shigeo SATO a, Yoichi SAITO b, Hidekazu TODOROKI b and
untitled
SPring-83 22(2010)730 MBE PLD MBE 0.002% PLD p Π n p n PF PF = S 2 S =V/ΔT V: [V] ΔT: [K] S[V/K], T[K], σ[s/m] TeBi 2 Te 3 (Bi,Se) 2 Te 3 (n-type) Ar KrF Ar gas 2. A. 3. c-si a-si InP GaAs 1g (μm) PV(W/g
d (i) (ii) 1 Georges[2] Maier [3] [1] ω = 0 1
![d (i) (ii) 1 Georges[2] Maier [3] [1] ω = 0 1](/thumbs/94/121850661.jpg "d (i) (ii) 1 Georges[2] Maier [3] [1] ω = 0 1")
16 5 19 10 d (i) (ii) 1 Georges[2] Maier [3] 2 10 1 [1] ω = 0 1 [4, 5] Dynamical Mean-Field Theory (DMFT) [2] DMFT I CPA [10] CPA CPA Σ(z) z CPA Σ(z) Σ(z) Σ(z) z - CPA Σ(z) DMFT Σ(z) CPA [6] 3 1960 [7]
[Ver. 0.2] 1 2 3 4 5 6 7 1 1.1 1.2 1.3 1.4 1.5 1 1.1 1 1.2 1. (elasticity) 2. (plasticity) 3. (strength) 4. 5. (toughness) 6. 1 1.2 1. (elasticity) } 1 1.2 2. (plasticity), 1 1.2 3. (strength) a < b F
1W II K =25 A (1) office(a439) (2) A4 etc. 12:00-13:30 Cafe David 1 2 TA appointment Cafe D
1W II K200 : October 6, 2004 Version : 1.2, kawahira@math.nagoa-u.ac.jp, http://www.math.nagoa-u.ac.jp/~kawahira/courses.htm TA M1, m0418c@math.nagoa-u.ac.jp TA Talor Jacobian 4 45 25 30 20 K2-1W04-00
untitled
Orowan Orowan Orowan Karman Karman ) Nadai Orowan Sims 5) x y.. Karman xy τ xy σ xx σ yy Orowan xy τ xy σ xy τ σ yy s Karman Karman Orowan.. 78 (7) ( φ ) d dφ ( φ ) sinφ m R τ cosφ = R p( φ )( sinφ µ cosφ
( 28 ) ( ) ( ) 0 This note is c 2016, 2017 by Setsuo Taniguchi. It may be used for personal or classroom purposes, but not for commercial purp
( 28) ( ) ( 28 9 22 ) 0 This ote is c 2016, 2017 by Setsuo Taiguchi. It may be used for persoal or classroom purposes, but ot for commercial purposes. i (http://www.stat.go.jp/teacher/c2epi1.htm ) = statistics
( ) URL: December 2, 2003
( ) URL: http://dbs.c.u-tokyo.ac.jp/~fukushima mailto:hukusima@phys.c.u-tokyo.ac.jp December 2, 2003 Today s Contents Summary 2003/12/02 1 Cannella Mydosh(1972) Edwards Anderson(1975): Model Hamiltonian:
C 3 C-1 Cu 2 (OH) 3 Cl A, B A, A, A, B, B Cu 2 (OH) 3 Cl clinoatacamite S=1/2 Heisenberg Cu 2+ T N 1 =18K T N 2 =6.5K SR T N 2 T N 1 T N 1 0T 1T 2T 3T
C 3 C-1 Cu 2 (OH) 3 Cl A, B A, A, A, B, B Cu 2 (OH) 3 Cl clinoatacamite S=1/2 Heisenberg Cu 2+ T N 1 =18K T N 2 =6.5K SR T N 2 T N 1 T N 1 0T 1T 2T 3T 4T 5T 6T C (J/K mol) 20 18 16 14 12 10 8 6 0 0 5 10
untitled
5 28 EAR CCLECCN ECCN 1. 2. 3. 4. 5.EAR page 1 of 28 WWW.Agilent.co.jp -> Q&A ECCN 10020A 10070A 10070B 10070C 10071A 10071B 10072A 10073A 10073B 10073C 10074A 10074B 10074C 10076A 10229A 10240B 10430A
(1) (2) (1) (2) 2 3 {a n } a 2 + a 4 + a a n S n S n = n = S n
. 99 () 0 0 0 () 0 00 0 350 300 () 5 0 () 3 {a n } a + a 4 + a 6 + + a 40 30 53 47 77 95 30 83 4 n S n S n = n = S n 303 9 k d 9 45 k =, d = 99 a d n a n d n a n = a + (n )d a n a n S n S n = n(a + a n
1 1 2 2 3 3 RBS 3 K-factor 3 5 8 Bragg 15 ERDA 21 ERDA 21 ERDA 21 31 31 33 RUMP 38 42 42 42 42 42 42 4 45 45 Ti 45 Ti 61 Ti 63 Ti 67 Ti 84 i Ti 86 V 90 V 99 V 101 V 105 V 114 V 116 121 Ti 121 Ti 123 V
ohpr.dvi
2003/12/04 TASK PAF A. Fukuyama et al., Comp. Phys. Rep. 4(1986) 137 A. Fukuyama et al., Nucl. Fusion 26(1986) 151 TASK/WM MHD ψ θ ϕ ψ θ e 1 = ψ, e 2 = θ, e 3 = ϕ ϕ E = E 1 e 1 + E 2 e 2 + E 3 e 3 J :
ohpr.dvi
2003-08-04 1984 VP-1001 CPU, 250 MFLOPS, 128 MB 2004ASCI Purple (LLNL)64 CPU 197, 100 TFLOPS, 50 TB, 4.5 MW PC 2 CPU 16, 4 GFLOPS, 32 GB, 3.2 kw 20028 CPU 640, 40 TFLOPS, 10 TB, 10 MW (ASCI: Accelerated
untitled
2008-11/13 12 4 12 5 401 501 702 401 501 A-1 9:00-10:30 B-1 9:15-10:30 C-1 9:00-10:30 A-5 9:00-10:30 B-5 9:15-10:30 A A-2 10:45-12:15 B-2 10:45-12:15 C-2 10:45-12:15 A-6 10:45-12:15 B-6 10:45-12:15 A B
SPring-8_seminar_
X 21 SPring-8 XAFS 2016 (= ) X PC cluster Synchrotron TEM-EELS XAFS / EELS HΨ k = E k Ψ k XANES/ELNES DFT ( + ) () WIEN2k, Elk, OLCAO () CASTEP, QUANTUM ESPRESSO FEFF, GNXAS, etc. Bethe-Salpeter (BSE)
d > 2 α B(y) y (5.1) s 2 = c z = x d 1+α dx ln u 1 ] 2u ψ(u) c z y 1 d 2 + α c z y t y y t- s 2 2 s 2 > d > 2 T c y T c y = T t c = T c /T 1 (3.
![d > 2 α B(y) y (5.1) s 2 = c z = x d 1+α dx ln u 1 ] 2u ψ(u) c z y 1 d 2 + α c z y t y y t- s 2 2 s 2 > d > 2 T c y T c y = T t c = T c /T 1 (3.](/thumbs/92/109966568.jpg "d > 2 α B(y) y (5.1) s 2 = c z = x d 1+α dx ln u 1 ] 2u ψ(u) c z y 1 d 2 + α c z y t y y t- s 2 2 s 2 > d > 2 T c y T c y = T t c = T c /T 1 (3.")
5 S 2 tot = S 2 T (y, t) + S 2 (y) = const. Z 2 (4.22) σ 2 /4 y = y z y t = T/T 1 2 (3.9) (3.15) s 2 = A(y, t) B(y) (5.1) A(y, t) = x d 1+α dx ln u 1 ] 2u ψ(u), u = x(y + x 2 )/t s 2 T A 3T d S 2 tot S
( ; ) C. H. Scholz, The Mechanics of Earthquakes and Faulting : - ( ) σ = σ t sin 2π(r a) λ dσ d(r a) =
1 9 8 1 1 1 ; 1 11 16 C. H. Scholz, The Mechanics of Earthquakes and Faulting 1. 1.1 1.1.1 : - σ = σ t sin πr a λ dσ dr a = E a = π λ σ πr a t cos λ 1 r a/λ 1 cos 1 E: σ t = Eλ πa a λ E/π γ : λ/ 3 γ =
, [g/cm 3 ] [m/s] 1 6 [kg m 2 s 1 ] ,58 1, ,56 1, , ,58 1,
![, [g/cm 3 ] [m/s] 1 6 [kg m 2 s 1 ] ,58 1, ,56 1, , ,58 1,](/thumbs/70/63326930.jpg ", [g/cm 3 ] [m/s] 1 6 [kg m 2 s 1 ] ,58 1, ,56 1, , ,58 1,")
264 72 5 216 pp. 264 272 * 43.3. k, Yj; 43.38.Hz 1. 2. 2.1 1 4.8 1 2 [kg m 2 s 1 ] 1.2 1 3 [g/cm 3 ] 34 [m/s] 1.48 1 6 [kg m 2 s 1 ] 1 [g/cm 3 ] 1,48 [m/s] 1, 1 4 1 2,5 1 Tutorial on the underwater or
講義ノート 物性研究 電子版 Vol.3 No.1, (2013 年 T c µ T c Kammerlingh Onnes 77K ρ 5.8µΩcm 4.2K ρ 10 4 µωcm σ 77K ρ 4.2K σ σ = ne 2 τ/m τ 77K
2 2 T c µ T c 1 1.1 1911 Kammerlingh Onnes 77K ρ 5.8µΩcm 4.2K ρ 1 4 µωcm σ 77K ρ 4.2K σ σ = ne 2 τ/m τ 77K τ 4.2K σ 58 213 email:takada@issp.u-tokyo.ac.jp 1933 Meissner Ochsenfeld λ = 1 5 cm B = χ B =
untitled
27.2.9 TOF-SIMS SIMS TOF-SIMS SIMS Mass Spectrometer ABCDE + ABC+ DE + Primary Ions: 1 12 ions/cm 2 Molecular Fragmentation Region ABCDE ABCDE 1 15 atoms/cm 2 Molecular Desorption Region Why TOF-SIMS?
10 IDM NEC
No.29 1 29 SEAJ SEAJ 2 3 63 1 1 2 2002 2003 6 News 9 IEDM 11 13 15 16 17 10 IDM NEC 3 12 3 10 10 2 3 3 20 110 1985 1995 1988 912001 1 1993 95 9798 199010 90 200 2 1950 2 1950 3 1311 10 3 4 4 5 51929 3
FDTD(Finite Difference Time Domain) Maxwell FDTD FDTD FDTD (FFT) FDTD CP(Contour-Path)-FDTD i
FDTD 17 2 7 03GD191 FDTD(Finite Difference Time Domain) Maxwell FDTD FDTD FDTD (FFT) FDTD CP(Contour-Path)-FDTD 45 1 2 i 1 1 1.1 FDTD....................... 1 1.2 FDTD............................ 2 1.3
橡紙目次第１章1
1 1 1 AstA A st t Q + = 0 Ast A st t y = bst ( y) t (1.1) (1.) y 1 Q + = 0 t b st q (1.3) (1.3) b st y Q + = q t (1.4) Abbott(1979) Q Q y + ( β ) + ga + gas f = 0 t A q u (1.5) Q Q y + ( β ) + ga + Sf
Keysight Technologies 誘電体測定の基礎
Keysight Technologies Application Note LCR1.1 THz (MUT) 1. PCB PCB SAR RAM IC 3 Keysight - Application Note... 2... 4... 4... 7... 8... 1... 11... 11... 12 Debye... 12 Cole-Cole... 13... 13... 14... 15...
st.dvi
9 3 5................................... 5............................. 5....................................... 5.................................. 7.........................................................................
ＶＬＳＩ工学
2008//5/ () 2008//5/ () 2 () http://ssc.pe.titech.ac.jp 2008//5/ () 3!! A (WCDMA/GSM) DD DoCoMo 905iP905i 2008//5/ () 4 minisd P900i SemiConsult SDRAM, MPEG4 UIMIrDA LCD/ AF ADC/DAC IC CCD C-CPUA-CPU DSPSRAM
2
Rb Rb Rb :10256010 2 3 1 5 1.1....................................... 5 1.2............................................. 5 1.3........................................ 6 2 7 2.1.........................................
bron.dvi
1p 76p 12 2 4 80238 1 1 7 1.1... 8 1.1.1... 8 1.1.2... 8 1.1.3... 9 1.2... 10 1.3... 10 2 11 2.1... 12 2.2... 13 2.2.1 (SEM)... 13 2.2.2... 14 2.2.3... 17 2.2.4 SEM 3... 17 2.3... 19 2.3.1... 19 2.3.2...
From Evans Application Notes
3 From Evans Application Notes http://www.eaglabs.com From Evans Application Notes http://www.eaglabs.com XPS AES ISS SSIMS ATR-IR 1-10keV µ 1 V() r = kx 2 = 2π µν x mm 1 2 µ= m + m 1 2 1 k ν = OSC 2
CV CV CV --
30 4 30 0 30 60 V/Hz V/Hz CV CV -- CV CV CV -- CV 3 AVR -3- 5m/ 0.5G 3m/ 0.3G 3 0.5Hz 0Hz 0.5Hz 0Hz 3 54kV 3 5 m/ 0.5G 3 3 5m/ 0.5G -4- V & bc 0.0VPT Z & G Z & L V& bc Z & L j0.50 0.0 0.0 5.7 V Z & + Z
Yuzo Nakamura, Kagoshima Univ., Dept Mech Engr. perfect crystal imperfect crystal point defect vacancy self-interstitial atom substitutional impurity
perfect crystal imperfect crystal point defect vacancy self-interstitial atom substitutional impurity atom interstitial impurity atom line defect dislocation planar defect surface grain boundary interface
スケーリング理論とはなにか? - --尺度を変えて見えること--
? URL: http://maildbs.c.u-tokyo.ac.jp/ fukushima mailto:hukusima@phys.c.u-tokyo.ac.jp DEX-SMI @ 2006 12 17 ( ) What is scaling theory? DEX-SMI 1 / 40 Outline Outline 1 2 3 4 ( ) What is scaling theory?
X線分析の進歩36 別刷
X X X-Ray Fluorescence Analysis on Environmental Standard Reference Materials with a Dry Battery X-Ray Generator Hideshi ISHII, Hiroya MIYAUCHI, Tadashi HIOKI and Jun KAWAI Copyright The Discussion Group
untitled
50cm 2500mm 300mm 15 CCD 15 100 1 2 3 4 23 SORA Kwak SeungJo 1 1.1 1995 20 2015 6 18 1931 1 2 3 2 ˆ 300mm 2500mm ˆ 2 1.2 WASP 1: 15 2048 2048 CCD 200mm 70 13 WASP 8 1.3 50cm 1 1: CCD 2: 1.4 MOST MOST 15