IC NMOS ( )
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1 5. MEMS 3 :
2 IC NMOS ( )
3 (T.Hoshino (Tokyo Electron Ltd.) et.al., 18 th Sensor Symposium late news, 2001) memory : Probe (pad) Count 4000 Cobra probe cards 2000 ASIC 200 LCD driver IC Epoxy-needle cantilever probe cards 50 RF device Membrane probe card Probe pitch (um) Probe card Application)
4 10000 Formfactor( ) 90um, 9867, 253DUTs MEMS type memory Probe (pad) Count ASIC JEM( ) 80um, 4860, 64DUTs MJC( ) 50um, 4672, 64DUTs TCL( ) 48um, 1248, 32DUTs LCD driver IC Cascade microtech( ) 50um RF device Membrane type Probe pitch (um) (H.Arimoto (Selete), Seminar of Electronic Journal (2005,4,20) 11-22)
5
6 (P.N.Minh, MEMS 04 (2004), p.430)
7
8 (Fowler-Nordheim plot)
9 Si-MFE (Micro Field Emitter ) (SEM), 43 (2000) p.112 (SEM), 43 (2000) p.112
10 1/ nm KrF 200nm (J.Aman, SPIE 5256 (2003) ) The SLM technology in the Sigma7300 is developed in cooperation with the Fraunhofer institute for Photonic Microsystems (FhG- IPMS) located in Dresden. Wafer with SLM s SLM( ) Micronic Sigma7300
11 Tilt Mirror Intensity SLM( ) Look up table
12 ( ) (T.Bakke (Fraunhofer IPMS), 2005 SUSS MicroTec Seminar in Japan (2005/10/6) ) KrF (T.Bakke (Fraunhofer IPMS), 2005 SUSS MicroTec Seminar in Japan (2005/10/6) )
13 DMD Hinge Memory (Creep) (IEEE 40th Annual Intnl. Reliability Physics Symp. Dallas (2002) p.136) (IEEE Trans. on Electron Devices, ED-30, 5 (1983) p.122)
14 Texas Instruments Inc., Larry J.Hornbeck (, /28, 3/14, 3/28, 4/11, 4/25, 5/9) (NSOM) (AFM)
15 (NSOM) (AFM) (P.H.Minh, MEMS 99) (NSOM) ( 20nm)
16 NSOM AFM NSOM AFM Optical throughput (intensity) versus aperture diameter (P. N. Minh et.al. Review of Scientific Instruments, 71,8 (2000), )
17 plasmon Narrow gap (several 10 nm. It determines the resolution) Polarization Incident light plasmon Localized and highly enhanced optical near-field. Bow-tie antenna (Opposed metal triangles) (K.Iwami, 4th Asia-Pasific Intern. Conf. on Near-Field Optics (APNFO-4), Taiwan (2003 Oct.13-16) pp.55-56) NSOM
18 AC turn off AFM NSOM AFM SNOM SEM Oxidation Si(100) Si 2 2 Patterning Photoresist Oxide Patterning Si Etching Super Critical Drying 20nm (X.Li et.al., MEMS 2002, Jan.22, TP41)
19 (J.Yang et.al., Appl. Phys. UHV Q Lett., 77, 2000) Laser Doppler Lens Electrode Cantilever Optical Window Phase Adjustor Filter Wave Converter Network Analyser Pulse Counter Vacuum Chamber V Computer ~ torr (UHV)
20 The mass of the CNTs bundle before storage g After hydrogen storage g The hydrogen storage capacitance 6.0 wt.% Mass resolution g 170 nm, Q (T.Ono et.al., MEMS 2001) Si w Qo RF B F B M F:Force w B: N =r B M: r: w Qo : w N : (N)MRFM [(Nuclear)Magnetic Resonace Force Microscopy]
21 5x x10-13 Force (N) 3x x x Amplitude of Magnetic Field (mt) 50nm Si 1.5 m Fe Cantilever Coil Piezo scanner Magnet MRFM (T.Ono et.al., MEMS 2001) 10 4 T/m N f 0 f 0 f 0 /f 0 f 0 27kHz N/m Q H m Q
22 Switchable cantilever for a time-of-flight scanning force microscopy D.W.Lee, Applied Physics Letters, 84 (2004) pp (Kawai et.al., MEMS 2006)
23 ( HORIBA Report 7 (1993) )
24 VO 2 ( ) 377 / 0 0 1/2 = 377 ( 117-E (1997) p.612) ( )
25 ( 117-E (1997) p.612) (NEC)
26 (1 ) (NEC) (NEC)
27 pn (M.Kimmata et.al., 2001 Intn. Conf. on Solid State Device and Materials, (2001) p.466) (S.Konishi et.al.,mems 2004, p.161) (M.Ligers & Y.C.Tai, MEMS 2006, p.106)
28 MOS Tr
29 1
30 : : ( ( ) MSS (2002)) ( ( ) MSS (2002))
31 ( ( ) MSS (2002)) Monolithic Package small adjustment tolerances high vibration stability MEDICINE Fast non-invasive measuring of skin tissue Wound monitoring Cancer precaution... : Remission diagrams time of skin [s] tissue : Spectrometer with control unit Fraunhofer IZM ( )
32 G : ( ) C 0.1K Joule/K Q 6 kev X Joule T 10 3 K) (L.Mechin et.al., Sensors & Actuators A55 (1996) p.19) (L.Mechin et.al., Sensors & Actuators A55 (1996) p.19)
33 X X ( Vol.13, No.12 (1998) p.18) X ( Vol.13, No.12 (1998) p.18)
34 Rms. Vibration. velocity X rel in mm/s W. 11/37/6, Pos. 2/2, Zelle 8 U T = V Excitation frequency Ω in khz Frequency response of Single Cell at various tuning voltages Tuning Voltage U T in V Resonance Frequency f 0 in khz Wafer 11/37/6, Position 2/ Overlapping Verified at Tuning Voltages of V seismic mass comb capacitors for signal detection flexurer lever enhanced electrostatic tuning system (Jan Mehnen (Fraunhofer Inst.-IZM))
35 Jan Mehnen Adaptive Microsystems for Vibration Monitoring (Fraunhofer Inst.-IZM) S.C.Terry, Ph.D. dissertation Stanford University (1975) S.C.Terry et.al, IEEE Tras. On Electron Devices, ED (1979)
36 ( ) ( )
37 Si
38
39
40 Ion Mobility Spectrometer (R.A.Miller (Charles Stark Draper Lab.), Solid-State Sensor and Actuator Workshop, p.120 (2000)) IMS
41 ESI (Electrospray ionization) (X.-Q.Wang, MEMS 99, p.523 (1999)) ESI (Electrospray ionization) (X.-Q.Wang, MEMS 99, p.523 (1999))
42 20mm (M.Esashi et.al., Transducers 87, )
43
44 (K.Hirata et.al., Transducers 2001, )
45 20mm ( ) (ISSYS ( ))
46 MEMS (C.T.-C.Nguyen, ISSCC2005,84) (W-4): 10-9 torr at 100 Rb (C.-H.Lee ( ), Solid-State Sensors, Actuator and Microsystems Workshop, Hilton Head island (2004) 23)
47 ( )
48
49 (M.Schwarz et.al. : Sensors & Actuators, 83 (2000) pp.40-46)
50 PTCA (Percutaneous Transluminal Angioplasty)
51 (SMA)
52 (K.-T.Park, IEEE J. of Microelectromechanical Systems, 8,p.349 (1999))
53 (Y.Haga et.al. MEMS 2000, ) ( )
54 SMA
55 1mm
56 0.5mm 0.5mm (T.Mineta et.al., Transducers 2001, )
57
58 3 mm (M.Fujita et.al., Sensor symposium, (May 2002))
59 5.5x x x x x x x Intensity (V) Intensity (V) x10 6.0x x x x x x x x x x x10-5 Time (sec) x x x x x10-5 Time (sec) Intensity (V) x10 6.0x x x x x x10-6 Intensity (V) x x x x x x x x x x x x10-5 Time (sec) x x x x x10-5 Time (sec) Intensity (V) x x x x x x x10-6 Intensity (V) x x x x x x x x10 4.0x10 6.0x10 8.0x10 1.0x10 Time (sec) Intensity (V) x x x x x x x10-6 Intensity (V) x10 4.0x10 6.0x10 8.0x10 1.0x10 Time (sec) x x x x x x x x x x x x10-5 Time (sec) x x x x x10-5 Time (sec)
60 Lower electrode (signal electrode ) 1mm Upper electrode (common electrode) Flat US transducer Convex shaped US transducer 8-elements ring-array convex shape transducer (J.J.Chen, MEMS 04 (2004) p.857) Post-CMOS CMUT (Capacitive Micromachined Ultrasonic Transducer) (R.O.Guildiken, MEMS2005 p.315)
61 CMUT (Capacitive Micromachined Ultrasonic Transducer) (R.O.Guildiken, MEMS2005 p.315) (,120-E,5 (2000) p.211)
62 CG CG MRI
63 (N.Kikuchi et.al., Transducers'03, Boston (2003 June 9-12)) 1mm 5 mm Φ 3.8 mm 1 mm
64 ( ) PC (Cr) 4 (T.Katsumata et.al., Optical MEMS 97) (K. Totsu et.al., Transducers 03 (2003) )
65
66 125µm Si Optical fiber
67 Optical fiber USB PC B5 size Hear Optical fiber Coupler Spectrometer White light Source 100µm ( ))
68 500Hz ~ ~
69 Ion Sensitive Field Effect Transistor ( 46 ) (Supplement to the J.J.AP.,44 (1975), )
70 ISFET ISFET ph PCO 2 (Med.& Biol.Eng.& Comp.,18 (1980) p.741)
71 ISFET ph PCO 2 ISFET ph
72 ISFET (NH 2 ) 2 CO + 2H 2 O + H + 2NH HCO 3
73 ISFET ISFET ph (R.Chida et.al., J. of Dental Research, 65 (1986) )
74 Si 3 N 4 surface Al 2 O 3 +SiO 2 surface ph pna ISFET M.Esashi et.al. IEEE Trans. on Electron Devices ED (1979) ISFET (Supplement to the J.J.AP.,44 (1975), )
75 ISFET (S.Shoji et.al., Sensors and Actuators, 14 (1988) pp )
76 (i-stat)
77
78 (CD ) (M.J.Madou, Biomedical Microdevices, 3, 3 (2001) pp ) (CD )
79 100 l 15 7 CD (M.Esashi et.al. : Sensors and Actuators, 20,1/2 (1990), )
80 ( ) 20 mm
81 ( CHS 00 7 (2000)) (S.C.Jacobson, Solid State Sensors and Actuators Workshop, p93 (1998))
82 ( ) (K.Handique et.al., Solid State Sensor & Actuator Workshop, Hilton Head (1998))
83 Deep RIE QCM (Quarts Crystal Microbalance) (L, Li et.al., Proc. of the 21th Sensor Symp., Kyoto, (2004) pp.19-22)
84 Spherical bi-convex QCM : : (a) Planer QCM (b) Sperical Bi-convex QCM QCM QCM (L, Li et.al., Proc. of the 21th Sensor Symp., Kyoto, (2004) pp.19-22)
85 MEMS viscometric glucose monitor Dextran / Con-A Non-consumptive equilibrium reaction ( GlucOnline) (Y.L.Zhao (Carnegie Mellon Univ.) et.al., Transducers 05, p.1816) A
86 (S.Metz ( EPFL), MEMS 2002 p.81) CMOS
87
IC NMOS ( )
5. MEMS 3 : IC NMOS ( ) (T.Hoshino (Tokyo Electron Ltd.) et.al., 18 th Sensor Symposium late news, 2001) 10000 memory : Probe (pad) Count 4000 Cobra probe cards 2000 ASIC 200 LCD driver IC Epoxy-needle
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( ) ( ) 1 MEMS : MEMS ( +13% / ) 2 3 ISFET ph,co 2 (K.Shimada, M.Esashi, Med.& Biol.Eng.& Comp.,18 (1980) p.741) (M.Esashi T.Matsuo, Supplement to the J.J.AP.,44 (1975),339-343) 4 5 (Y.Matsumoto, S.Shoji,
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1. 2. ( ) 3. ( ) 4. ( ) 5. ( ) 6. MEMS 20mm 400 (40 )100 A-A A 2. ( ) MEMS A (L.M.Roylance et.al., IEEE Trans. on Electron Devices, ED-26 (1979) p.1911) ( (In-Vivo Oximetry)) (J.M.Schmitt,F.G.Mihm and
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4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( ) ) ( ) ( 34,3 (1995)) (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )
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MEMS 4 : ( ) ( ) Pt ITO Si (2 m) Si (0.2 m) (T.Ono et.al., J.Micromech.Microeng.,10 (2000) 445-451) DEMA (Distributed Electrostatic MicroActuator) (XY ) DEMA (Distributed Electrostatic MicroActuator)
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4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( ) ) ( ) ( 34,3 (1995)) (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )
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